5687 general electric
Abstract: mitsubishi 1183 MGF0912A
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0912A L & S BAND GaAs FET [ non – matched ] DESCRIPTION OUTLINE DRAWING Unit : millimeters The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES ① 2MIN • High output power
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MGF0912A
MGF0912A
33dBm
June/2004
5687 general electric
mitsubishi 1183
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33dBm
Abstract: MGF0912A CD4540
Text: MITSUBISHI SEMICONDUCTOFkGaAs FET> MGF0912AI L & S BAND Ga As FET [ non - matched ] DESCRIPTION OUTLINE DRAWNG Unit : millimeters The MGF0912A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power
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OCR Scan
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MGF0912A
MGF0912A
33dBm
33dBm
CD4540
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PDF
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0912A L & S BAND / 14W non - matched DESCRIPTION OUTLINE DRAWING The MGF0912A, GaAs FET with an N-channel schottky gate, is designed for use in L/S band amplifiers. Unit : m illim eters FEATURES ① 4.4+0/-0.3
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Original
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MGF0912A
MGF0912A,
33dBm
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PDF
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0912A L & S BAND / 14W non - matched DESCRIPTION OUTLINE DRAWING The MGF0912A, GaAs FET with an N-channel schottky gate, is designed for use in L/S band amplifiers. Unit : m illim eters FEATURES 2.2 2MIN
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Original
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MGF0912A
MGF0912A,
33dBm
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PDF
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