Untitled
Abstract: No abstract text available
Text: PMEG2005CT 500 mA low VF dual MEGA Schottky barrier rectifier Rev. 2 — 22 June 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection,
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PMEG2005CT
O-236AB)
AEC-Q101
771-PMEG2005CT215
PMEG2005CT
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BAS716
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAS716 Low-leakage diode Product data sheet 2003 Nov 07 NXP Semiconductors Product data sheet Low-leakage diode BAS716 FEATURES PINNING • Plastic SMD package PIN ; • Low leakage current: typ. 0.2 nA • Switching time: typ. 0.6 µs
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M3D319
BAS716
OD523
SC-79)
BAS716
R76/01/pp8
771-BAS716-T/R
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DIODE BAT86 replacement
Abstract: bat86
Text: BAT86 Schottky barrier single diode 25 July 2012 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a hermetically-sealed subminiature SOD68 DO-34 package. The diode
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BAT86
DO-34)
DIODE BAT86 replacement
bat86
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PMLL4148
Abstract: PMLL4148L PMLL4448
Text: PMLL4148L; PMLL4448 High-speed switching diodes Rev. 07 — 31 January 2007 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diodes, fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C Surface-Mounted Device SMD packages.
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PMLL4148L;
PMLL4448
OD80C
PMLL4148L
OD80C
PMLL4148L
PMLL4448
PMLL4148
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PMEG4005CT
Abstract: No abstract text available
Text: PMEG4005CT 500 mA low VF dual MEGA Schottky barrier rectifier Rev. 01 — 5 June 2009 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection,
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PMEG4005CT
O-236AB)
AEC-Q101
PMEG4005CT
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PMBD6050
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD6050 High-speed diode Product specification Supersedes data of 1999 May 11 2004 Jan 14 Philips Semiconductors Product specification High-speed diode PMBD6050 PINNING FEATURES • Small plastic SMD package
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M3D088
PMBD6050
PMBD6050
SCA76
R76/04/pp10
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SOT23 DIODE marking CODE AV
Abstract: No abstract text available
Text: PMEG3005CT 500 mA low VF dual MEGA Schottky barrier rectifier Rev. 2 — 20 September 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection,
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PMEG3005CT
O-236AB)
AEC-Q101
SOT23 DIODE marking CODE AV
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BAT74
Abstract: BAT74L41
Text: BAT74 Schottky barrier double diode Rev. 03 — 19 April 2010 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier double diode with an integrated guard ring for stress protection. Two electrically isolated Schottky barrier diodes, encapsulated in a small SOT143B
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BAT74
OT143B
BAT74
BAT74L41
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MSA435
Abstract: PMLL4148 PMLL4148L PMLL4448 MSA461
Text: PMLL4148L; PMLL4448 High-speed switching diodes Rev. 06 — 4 April 2005 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diodes, fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages.
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PMLL4148L;
PMLL4448
OD80C
PMLL4148L
OD80C
MSA435
PMLL4148
PMLL4148L
PMLL4448
MSA461
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bas16
Abstract: No abstract text available
Text: BAS16 series High-speed switching diodes Rev. 6 — 24 September 2014 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview
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BAS16
BAS16
O-236AB
BAS16H
OD123F
BAS16J
OD323F
SC-90
BAS16L
OD882
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1N4148.1N4448
Abstract: 1N4148 1N4448 MAM246
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N4148; 1N4448 High-speed diodes Product specification Supersedes data of 1996 Sep 03 1999 May 25 Philips Semiconductors Product specification High-speed diodes 1N4148; 1N4448 FEATURES DESCRIPTION • Hermetically sealed leaded glass
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M3D176
1N4148;
1N4448
DO-35)
1N4148
1N4448
MAM246
1N4148.1N4448
MAM246
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BAV99 SERIES
Abstract: BAV99 NXP MARKING bav99 nxp Diode bav99 nxp BAV99 NXP SMD MARKING CODE BAV99 BAV993 BAV99S-SOT363 NXP BAV99W reflow temperature Diode bav99
Text: BAV99 series High-speed switching diodes Rev. 8 — 18 November 2010 Product data sheet 1. Product profile 1.1 General description High-speed switching diodes, encapsulated in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview Type number
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BAV99
BAV99
O-236AB
BAV99S
OT363
SC-88
BAV99W
OT323
SC-70
AEC-Q101
BAV99 SERIES
BAV99 NXP MARKING
bav99 nxp
Diode bav99 nxp
NXP SMD MARKING CODE BAV99
BAV993
BAV99S-SOT363
NXP BAV99W reflow temperature
Diode bav99
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PMEG3020CPA
Abstract: No abstract text available
Text: PMEG3020CPA 2 A low VF dual MEGA Schottky barrier rectifier Rev. 1 — 24 August 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection,
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PMEG3020CPA
OT1061
AEC-Q101
PMEG3020CPA
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BAS28 nxp
Abstract: BAS28 diode Marking code v3
Text: BAS28 High-speed double diode Rev. 3 — 22 July 2010 Product data sheet 1. Product profile 1.1 General description Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device SMD plastic package. The diodes are not
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BAS28
OT143B
AEC-Q101
BAS28 nxp
BAS28
diode Marking code v3
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BA220
Abstract: MAM246
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BA220 High-speed diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 03 Philips Semiconductors Product specification High-speed diode BA220 FEATURES DESCRIPTION
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M3D176
BA220
DO-35)
BA220
MAM246
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BAS29
Abstract: BAS31 BAS35 l21 smd code
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAS29; BAS31; BAS35 General purpose controlled avalanche double diodes Product specification Supersedes data of 1996 Sep 10 1999 May 21 Philips Semiconductors Product specification General purpose controlled avalanche
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M3D088
BAS29;
BAS31;
BAS35
BAS29
BAS31
BAS29
BAS31
BAS35
l21 smd code
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BAX14
Abstract: MAM246 GENERAL PURPOSE DIODE
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX14 General purpose diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification General purpose diode BAX14 FEATURES DESCRIPTION • Hermetically sealed leaded glass
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M3D176
BAX14
DO-35)
BAX14
MAM246
MAM246
GENERAL PURPOSE DIODE
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A6P SMD
Abstract: smd diode a6P A6p DIODE marking a6p smd A6p A6p smd bas16 MSA562 BAS16 diode a6p marking code A6p
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D088 BAS16 High-speed diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 12 Philips Semiconductors Product specification High-speed diode BAS16
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M3D088
BAS16
BAS16
A6P SMD
smd diode a6P
A6p DIODE
marking a6p
smd A6p
A6p smd bas16
MSA562
diode a6p
marking code A6p
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BAV23A/DG
Abstract: BAV23 BAV23A BAV23C BAV23S SOT23 NXP power dissipation TO-236AB
Text: BAV23 series Dual high-voltage switching diodes Rev. 07 — 19 March 2010 Product data sheet 1. Product profile 1.1 General description Dual high-voltage switching diodes, encapsulated in small Surface-Mounted Device SMD plastic packages. Table 1. Product overview
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BAV23
BAV23A
O-236AB
BAV23C
BAV23S
BAV23
OT143B
BAV23A/DG
BAV23A
BAV23C
BAV23S
SOT23 NXP power dissipation TO-236AB
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1N914
Abstract: MAM246
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914 High-speed diode Product specification Supersedes data of 1996 Sep 03 1999 May 26 Philips Semiconductors Product specification High-speed diode 1N914 FEATURES DESCRIPTION • Hermetically sealed leaded glass
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M3D176
1N914
DO-35)
1N914
MAM246
115002/03/pp8
MAM246
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smd code A1t
Abstract: A1t smd smd diode A1T SMD a1T Transistor A1T SMD diode DIODE smd marking a1t 22 a1t diode DIODE smd marking A1p A1t SOT23 DIODE smd marking A1t
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAW56 High-speed double diode Product specification Supersedes data of 1996 Sep 17 1999 May 11 Philips Semiconductors Product specification High-speed double diode BAW56 FEATURES DESCRIPTION • Small plastic SMD package
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M3D088
BAW56
BAW56
115002/00/03/pp12
smd code A1t
A1t smd
smd diode A1T
SMD a1T Transistor
A1T SMD diode
DIODE smd marking a1t 22
a1t diode
DIODE smd marking A1p
A1t SOT23
DIODE smd marking A1t
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BAS716
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BAS716 Low-leakage diode Product data sheet 2003 Nov 07 NXP Semiconductors Product data sheet Low-leakage diode BAS716 FEATURES PINNING • Plastic SMD package PIN ; • Low leakage current: typ. 0.2 nA • Switching time: typ. 0.6 µs
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M3D319
BAS716
MAM408
R76/01/pp8
BAS716
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SMD MARKING code t5c
Abstract: smd t5c transistor t5c code t5c sot23 smd p5c smd code marking WV PMBD7000 SMD MARKING code p5c
Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PMBD7000 High-speed double diode Product data sheet Supersedes data of 1996 Sep 18 1999 May 11 NXP Semiconductors Product data sheet High-speed double diode PMBD7000 PINNING FEATURES DESCRIPTION • Small plastic SMD package
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M3D088
PMBD7000
PMBD7000
115002/00/03/pp9
SMD MARKING code t5c
smd t5c
transistor t5c
code t5c sot23
smd p5c
smd code marking WV
SMD MARKING code p5c
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PMLL4150
Abstract: PMLL4151 PMLL4153
Text: DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page Datasheet M3D054 PMLL4150; PMLL4151; PMLL4153 High-speed diodes Product data sheet Supersedes data of April 1996 1996 Sep 18 NXP Semiconductors Product data sheet PMLL4150; PMLL4151; PMLL4153 High-speed diodes
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M3D054
PMLL4150;
PMLL4151;
PMLL4153
PMLL4150,
PMLL4151,
PMLL4153
PMLL4150
PMLL4151
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