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    Untitled

    Abstract: No abstract text available
    Text: GTR MODULL SILICON N CHANNEL IGBT MG75N1AS1 HIGH P O W E R S W I T C H I N G APP L I C A T I O N S . Unit in m m . H i g h Input Impe d a n c e 5 3± 0.5 . High S p e e d : tf= 0. 7fis Max. ( l £ = 75A) . Low Saturation Voltage : V ^ e ( s a t ) = 5 .O V ( M a x . )


    OCR Scan     		PDF MG75N1AS1 MG75N1AS!

    MG30H1BL1

    Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
    Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX


    OCR Scan     		PDF 00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1