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    MG50Q1ZS50 Search Results

    MG50Q1ZS50 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG50Q1ZS50 Toshiba TRANS IGBT MODULE N-CH 1200V 78A 5(2-94D7A) Original PDF
    MG50Q1ZS50 Toshiba GTR Module Silicon N Channel IGBT Original PDF

    MG50Q1ZS50 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: MG50Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3 µs max @Inductive load Low saturation voltage : VCE (sat) = 3.6 V (max) Enhancement-mode


    Original
    PDF MG50Q1ZS50 2-94D7A

    MG50Q1ZS50

    Abstract: No abstract text available
    Text: MG50Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3 µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6 V (Max) Enhancement-mode


    Original
    PDF MG50Q1ZS50 MG50Q1ZS50

    MG50Q1ZS50

    Abstract: No abstract text available
    Text: MG50Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3 µs max @Inductive load l Low saturation voltage : VCE (sat) = 3.6 V (max)


    Original
    PDF MG50Q1ZS50 MG50Q1ZS50

    GT30J322

    Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
    Text: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬


    Original
    PDF MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original
    PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG50Q1ZS50 MG50Q1ZS50 TO SHIBA GTR M O DU LE SILICON N C HANN EL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • • • • High Input Impedance High Speed : tf = 0.3 jus Max. @Inductive Load Low Saturation Voltage


    OCR Scan
    PDF MG50Q1ZS50

    MG50Q1ZS50

    Abstract: No abstract text available
    Text: TOSHIBA MG50Q1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q1 ZS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf = 0.3 /us Max. @Induetive Load Low Saturation Voltage • VCE (sat) = 3-6 v (Max.)


    OCR Scan
    PDF MG50Q1ZS50 MG50Q1 2-94D7A MG50Q1ZS50

    MG50Q1ZS50

    Abstract: ZS50 50ARC
    Text: TO SH IBA MG50Q1ZS50 MG50Q1 ZS50 T O S H IB A G TR M O D U LE SILIC O N N C H A N N E L IG BT HIGH PO W ER SW ITCH IN G A P P LIC A T IO N S M O TO R C O N T R O L A P P LIC A T IO N S • • • • • High Input Impedance High Speed : tf = 0.3 jus Max.


    OCR Scan
    PDF MG50Q1ZS50 MG50Q1 2-94D7A 125-C MG50Q1ZS50 ZS50 50ARC