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    Rochester Electronics LLC MMG3009NT1

    IC AMP CELLULAR 0HZ-6GHZ SOT89-4
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    NXP Semiconductors MMG3006NT1

    IC AMP CELL 400MHZ-2.4GHZ 16QFN
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    DigiKey MMG3006NT1 Cut Tape 890 1
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    Mouser Electronics MMG3006NT1 4,000
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    Richardson RFPD MMG3006NT1 1,590 1,000
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    Chip1Stop MMG3006NT1 290
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    Rochester Electronics LLC MMG3002NT1

    IC AMP GPS 40MHZ-3.6GHZ SOT89-4
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    Hirose Electric Co Ltd HRM(G)-300-467B-1

    CONN SMA JACK STR 50OHM EDGE MNT
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    DigiKey HRM(G)-300-467B-1 Bulk 303 1
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    Mouser Electronics HRM(G)-300-467B-1 768
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    Newark HRM(G)-300-467B-1 Bulk 20 1
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    Avnet Abacus HRM(G)-300-467B-1 14 Weeks 20
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    Hirose Electric Co Ltd HRM(G)-300-468B-1(01)

    CONN SMA JACK STR
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    DigiKey HRM(G)-300-468B-1(01) Bag 103 1
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    Find more MG300 price and stock on Findchips.com

    MG300 Datasheets (88)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MG300 FLIR Uncategorized - Miscellaneous - CAT IV INSULATION TESTER/M. METE Original PDF
    MG-3000-A-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 3000PSI LCD Original PDF
    MG-3000-A-MD-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 3000PSI LCD Original PDF
    MG-3000-B-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 3000 PSI 1/8 NPT 9V Original PDF
    MG-3000-B-MD-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 3000 PSI 4-20 MA 1/8 NPT Original PDF
    MG-300-A-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 300PSI LCD Original PDF
    MG-300-A-MD-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR DIGITAL GAUGE 300PSI LCD Original PDF
    MG-300-B-9V-F SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 300 PSI 1/8 NPT Original PDF
    MG-300-B-9V-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 300 PSI 1/8 NPT 9V Original PDF
    MG-300-B-MD-R SSI Technologies Pressure Sensors, Transducers, Sensors, Transducers, SENSOR 300 PSI 4-20 MA 1/8 NPT Original PDF
    MG300G1UL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300G1UL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300G1UL1 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    MG300G1UL1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG300G1UL1 Toshiba Silicon NPN CTR module for high switching and motor control applications Scan PDF
    MG300H1FL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300H1FL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300H1FL1 Unknown Power and Industrial Semiconductors Data Book Scan PDF
    MG300H1UL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    MG300H1UL1 Unknown Catalog Scans - Shortform Datasheet Scan PDF

    MG300 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MG300Q1US41

    Abstract: No abstract text available
    Text: MG300Q1US41 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q1US41 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.5µs Max. trr = 0.5µs (Max.) Low saturation voltage : VCE(sat) = 4.0V (Max.)


    Original     		PDF MG300Q1US41 2-109A4A MG300Q1US41

    Untitled

    Abstract: No abstract text available
    Text: MG300Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max. Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max.) Enhancement-mode


    Original     		PDF MG300Q2YS50 2-109C1A

    MG300Q2YS61

    Abstract: toshiba G2 MG300Q2YS
    Text: MG300Q2YS61 TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS61 High Power Switching Applications Motor Control Applications • High input impedance · High speed: tf = 0.3 µs max Unit: mm Inductive load · Low saturation voltage: VCE (sat) = 2.6 V (max)


    Original     		PDF MG300Q2YS61 2-109C4A MG300Q2YS61 toshiba G2 MG300Q2YS

    MG300Q2YS61

    Abstract: MG300Q2YS
    Text: MG300Q2YS61 TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS61 High Power Switching Applications Motor Control Applications • High input impedance • High speed: tf = 0.3 µs max Unit: mm Inductive load • Low saturation voltage: VCE (sat) = 2.6 V (max)


    Original     		PDF MG300Q2YS61 2-109C4A MG300Q2YS61 MG300Q2YS

    MG300J1US51

    Abstract: No abstract text available
    Text: MG300J1US51 TOSHIBA GTR Module Silicon N Channel IGBT MG300J1US51 Unit: mm High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode


    Original     		PDF MG300J1US51 2-109A4A MG300J1US51

    TOSHIBA MG300J2YS50

    Abstract: MG300J2YS50 mg300* toshiba
    Text: MG300J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300J2YS50 Unit: mm High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode


    Original     		PDF MG300J2YS50 2-109C1A TOSHIBA MG300J2YS50 MG300J2YS50 mg300* toshiba

    MG300Q2YS65H

    Abstract: No abstract text available
    Text: MG300Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG300Q2YS65H High Power & High Speed Switching Applications • High input impedance • Enhancement-mode • The electrodes are isolated from case. Unit: mm Equivalent Circuit E1 E2 C1 E2 G1 E1/C2 G2


    Original     		PDF MG300Q2YS65H 2-109C4A MG300Q2YS65H

    mg300j2ys50

    Abstract: No abstract text available
    Text: MG300J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG300J2YS50 Unit: mm High Power Switching Applications Motor Control Applications The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode


    Original     		PDF MG300J2YS50 2-109C1A mg300j2ys50

    Untitled

    Abstract: No abstract text available
    Text: MG300J1US51 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S. • • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode


    OCR Scan     		PDF MG300J1US51 2-70v MG300J1US51

    300Q1US41

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q1US41 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q1US41 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5i«s Max. trr = O.S^s (Max.) Low Saturation Voltage : V cE (sa t) = 4.0V


    OCR Scan     		PDF MG300Q1US41 00A/ius 300Q1US41

    Tag 676 800

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300 2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • H ig h I n p u t Im p ed an ce • H ig h S p eed : t f = 0 .3 / / s M ax. •In d u c tiv e L oad •


    OCR Scan     		PDF MG300Q2YS50 MG300 2YS50 Tag 676 800

    MG300H1FL1

    Abstract: Diode 864
    Text: G TR MODULE MG300H1FL1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-M 6 FEATURES: / 4- 0& 5± O. 3 YJjtj . The Collector is Isolated from Case. yPi. Bl BX . With Built-in Free Wheeling Diode . High DC Current Gain : hFE=80 Min. (Ic=300A)


    OCR Scan     		PDF MG300H1FL1 2-80D1A MG300H1FL1 Diode 864

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG300Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS40 HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed EQUIVALENT CIRCUIT : tf = 0.5^s Max. trr = 0.5,«s (Max.) V cE (sat) = 4.0V (Max.)


    OCR Scan     		PDF MG300Q2YS40 2-109D2A 00A//iS TjS125

    MG300M1UK2

    Abstract: No abstract text available
    Text: MG300M1UK2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode. . High DC Current Gain: hpj?=80 Min. (Ic=300A) . Low Saturation Voltage


    OCR Scan     		PDF MG300M1UK2 300M1UK2 MG300M1UK2

    MG300Q2YS50

    Abstract: 300AT
    Text: TOSHIBA MG300Q2YS50 TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG300Q2 YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG300Q2YS50 300Q2Y MG300Q2YS50 300AT

    MG300M1FK1

    Abstract: DIODE S3L DIODE TP S3L
    Text: T O SH IB A TOSHIBA GTR MODULE SEMICONDUCTOR MG300M1FK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-M6 FEATURES: . The Collector is Isolated from Case . With Built-in Free Wheeling Diode


    OCR Scan     		PDF

    MG300Q1US51

    Abstract: MG300Q1
    Text: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3^s Max. @Induetive Load Low Saturation Voltage : VCE (Sat) =3.6V (Max.)


    OCR Scan     		PDF MG300Q1US51 MG300Q1 2-109F1A MG300Q1US51

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG300J1US51 M G 3 0 0 J 1 US51 TO SH IBA GTR M O DULE SILICON N CHANNEL IGBT HIGH P O W E R SW ITCHIN G APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One


    OCR Scan     		PDF MG300J1US51

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 Q Q n 1 u S 51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 ^ s Max. Inductive Load • Low Saturation Voltage • V c e (sat) —3.6V (Max.)


    OCR Scan     		PDF MG300Q1US51

    MG300N1US1

    Abstract: w531
    Text: GTR MODULL SILICON N CHANNEL IGBT MG300N1US1 HIGH P O WER S W I T C H I N G APPLICATIONS. Unit M O T O R C O N T R O L A P PLICATIONS. in 20±0.5 . High Input 24±0.5 Impedance . H i g h S peed 4-^6.5±0.3 : t f = l .0/is M a x . t rr= 0- 5 n s ( M a x .)


    OCR Scan     		PDF MG300N1US1 2-109A4A MG300N1US1 w531

    MG300J1US1

    Abstract: 1030rg
    Text: GTR MODULE SILICON N CHANNEL IGBT MG300J1US1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf= 0. 35/is Max. trr=0. 25tis(Max.) . Low Saturation Voltage : VCEi(sat)=4.0V(Hax.) . Enhancement-?tode


    OCR Scan     		PDF MG300J1US1 35/is 25tis G300J1US1------------------------- MG300J1US1 1030rg

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG300Q1US51 TO SH IBA GTR M O D U L E M G 3 SILICON N C H A N N EL IGBT Q 1 U S 5 1 HIGH POW ER SW ITCHING APPLICATIONS M O T O R CONTRO L APPLICATIONS • • H igh Input Impedance H ig h sp eed : tf= 0 .3 /Æ Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG300Q1US51 1256C VCE25i

    mg30

    Abstract: MG300Q1US51 P channel 600v 300a IGBT
    Text: T O S H IB A MG300Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 3 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.)


    OCR Scan     		PDF MG300Q1US51 MG300Q1 2-109F1A mg30 MG300Q1US51 P channel 600v 300a IGBT

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A MG300Q2YS50 TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • High Input Impedance • High Speed : tf= 0 .3 /«s Max. Inductive Load • Low Saturation Voltage


    OCR Scan     		PDF MG300Q2YS50 961001EAA1