MG200J Search Results

MG200J Price and Stock

Filter by Manufacturer


Powerex Power Semiconductors MG200J6ES61 IGBT MOD 600V 200A 1000W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MG200J6ES61	Bulk			1	1 $211.7 10 $211.7 100 $211.7 1000 $211.7 10000 $211.7	Buy Now
Toshiba America Electronic Components MG200J2YS1 GTR MODULE SILICON N CHANNEL IGBT Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	MG200J2YS1		172			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components MG200J2YS40AC Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	MG200J2YS40AC		3			1 - 10 - 100 - 1000 - 10000 -	Get Quote

MG200J Datasheets (13)

Part	Manufacturer	Description	Datasheet Type	PDF
MG200J2YS1	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG200J2YS1	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG200J2YS11	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG200J2YS11	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG200J2YS2	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
MG200J2YS50	Toshiba	Silicon N-channel IGBT GTR module for high power switching, motor control applications	Original	PDF
MG200J2YS50	Toshiba	GTR Module Silicon N Channel IGBT	Scan	PDF
MG200J2YS50	Toshiba	GTR Module Silicon N-Channel IGBT	Scan	PDF
MG200J2YS50DS	Toshiba	Silicon N-Channel GTR Module	Scan	PDF
MG200J6ES60	Toshiba	Compact IGBT Modules & Compact IPM	Original	PDF
MG200J6ES60	Toshiba		Original	PDF
MG200J6ES61	Mitsubishi	High Power Switching Applications Motor Control Applications	Original	PDF
MG200J6ES61	Powerex	Six IGBTMOD Compact IGBT Series Module 200 Amperes/600 Volts	Original	PDF

MG200J Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MG200J6ES60 TOSHIBA GTR Module Silicon N Channel IGBT MG200J6ES60 600V/200A 6in1 High Power Switching Applications Motor Control Applications • Integrates inverter power circuit in to a single package. • The electrodes are isolated from case. • Low thermal resistance	Original	MG200J6ES60 MG200J6ES60 00V/200A 2-123B1A	PDF
FC-20 equivalent Abstract: PC-1000 equivalent MG200J6ES61 Text: MG200J6ES61 MITSUBISHI IGBT Module MG200J6ES61 600V/200A 6in1 High Power Switching Applications Motor Control Applications • Integrates inverter power circuit in to a single package. • The electrodes are isolated from case. • Low thermal resistance	Original	MG200J6ES61 MG200J6ES61 00V/200A B25/85 FC-20 equivalent PC-1000 equivalent	PDF
Untitled Abstract: No abstract text available Text: MG200J6ES60 TOSHIBA GTR Module Silicon N Channel IGBT MG200J6ES60 600V/200A 6in1 High Power Switching Applications Motor Control Applications • Integrates inverter power circuit in to a single package. • The electrodes are isolated from case. • Low thermal resistance	Original	MG200J6ES60 00V/200A 2-123B1A	PDF
MG200J2YS50 Abstract: 600V 200A igbt MOTOR SPEED CONTROL 2-95A1A Text: MG200J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG200J2YS50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode	Original	MG200J2YS50 2-95A1A MG200J2YS50 600V 200A igbt MOTOR SPEED CONTROL 2-95A1A	PDF
1000 watts ups circuit diagram with detail Abstract: MG200J6ES61 Text: MG200J6ES61 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Six IGBTMOD Compact IGBT Series Module 200 Amperes/600 Volts A D L J K H M U G N P DETAIL "A" C B U V F E W H Q N Q T S R P R V P W X CN-1 CN-2 P CN-1:7 CN-1:6	Original	MG200J6ES61 Amperes/600 1000 watts ups circuit diagram with detail MG200J6ES61	PDF
MG200J2YS50 Abstract: No abstract text available Text: MG200J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG200J2YS50 High Power Switching Applications Motor Control Applications Unit: mm The electrodes are isolated from case. High input impedance Includes a complete half bridge in one package. Enhancement-mode	Original	MG200J2YS50 2-95A1A MG200J2YS50	PDF
MG200J2YS50 Abstract: No abstract text available Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG200J2YS50 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • • • • tf = 0.30µs Max. (IC = 200A)	Original	MG200J2YS50 MG200J2YS50	PDF
Untitled Abstract: No abstract text available Text: MG200J6ES60 TOSHIBA IGBT Module Silicon N Channel IGBT MG200J6ES60 600V/200A 6in1 High Power Switching Applications Motor Control Applications • Integrates inverter power circuit in to a single package. • The electrodes are isolated from case. • Low thermal resistance	Original	MG200J6ES60 MG200J6ES60 00V/200A	PDF
set igbt on off Vge Abstract: MG200J6ES60 "TOSHIBA IGBT module" Text: MG200J6ES60 TOSHIBA IGBT Module Silicon N Channel IGBT MG200J6ES60 600V/200A 6in1 High Power Switching Applications Motor Control Applications • Integrates inverter power circuit in to a single package. • The electrodes are isolated from case. • Low thermal resistance	Original	MG200J6ES60 MG200J6ES60 00V/200A 2-123B1A set igbt on off Vge "TOSHIBA IGBT module"	PDF
Untitled Abstract: No abstract text available Text: MG200J2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG200J2YS50 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode	Original	MG200J2YS50 2-95A1A	PDF
MG200J6ES60 Abstract: TOSHIBA IGBT DATA BOOK Text: MG200J6ES60 TOSHIBA GTR Module Silicon N Channel IGBT MG200J6ES60 600V/200A 6in1 High Power Switching Applications Motor Control Applications • Integrates inverter power circuit in to a single package. · The electrodes are isolated from case. · Low thermal resistance	Original	MG200J6ES60 MG200J6ES60 00V/200A 2-123B1A TOSHIBA IGBT DATA BOOK	PDF
SKIIP 33 nec 125 t2 Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302 Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.	Original	734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302	PDF
TOSHIBA MG150N2YS40 Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40 Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動したり故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入	Original	050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40	PDF
MG200J2YS50 Abstract: No abstract text available Text: TOSHIBA MG200J2YS50 MG200J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2 - ^ 5.4± 0.3 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One	OCR Scan	MG200J2YS50 200J2 2-95A1A MG200J2YS50	PDF

Untitled Abstract: No abstract text available Text: T O SH IB A MG200J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200J2YS50 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2-#S.4±0.3 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One	OCR Scan	MG200J2YS50 2-95A1A 50jus* 100/2S*	PDF
MG200J2YS1 Abstract: No abstract text available Text: GTR MODULE SILICON N CHANNEL IGBT MG200J2YS1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance . High Speed : tf=0.35m s Max. trr=0. 25jJs(tlax.) . Low Saturation Voltage : VcE(sat)=4.0V(Max.) . Enhancement-Mode . Includes a Complete Half Bridge in One	OCR Scan	MG200J2YS1 25jJs MG200J2YS1	PDF
Untitled Abstract: No abstract text available Text: MG200J2YS50 Unit in mm HIGH P O W ER SW IT C H IN G A PPLICA TIO N S. M O T O R C O N T R O L A PPLIC A TIO N S. • • • • • • j The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode	OCR Scan	MG200J2YS50 30//s 15//s 2-95A1A	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MG200J2YS50 MG200J2YS50 TOSHIBA GTR MODULE SILICON IM CHANNEL IGBT U nit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One	OCR Scan	MG200J2YS50 2-95A1A	PDF
MG200J2YS50 Abstract: No abstract text available Text: T O SH IB A MG200J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200J2YS50 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2-#S.4±0.3 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One	OCR Scan	MG200J2YS50 2-95A1A MG200J2YS50	PDF
GT250101 Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9 Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a	OCR Scan	2-99A1A 2-99B1A GT250101 MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9	PDF
MG15J6ES40 Abstract: MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4 Text: .2 Short-Circuit Guarantee General conditions Tim e b etw een short-circuits > 1 A llowed n u m b er o f short-circuits 100 Junction tem peratu re before short-circuit < 125 s °C Electrical Conditions for 600 V Types T ype No. Rg min / £2 VCE/V VCEP/V MG15J6ES40	OCR Scan	MG15J6ES40 MG2SJ6KS40 MG50J2YS50 MG50J6KS50 MG75J2YS50 MG75J6KS50 100J2YS50 MG100J6KS50 MG150J2YS50 MG200J2YS50 MG150Q2YS40 MG300J2YS50 MG300Q2YS40 MG75Q2YS40 MG25Q2YS40 MG200Q2YS40 MG300Q2YS4	PDF
MG40001US41 Abstract: MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50 Text: Promotion Line-up Discretes s s i s « I I 1 S 1 * III » 5-5 -OIlfOh- I1! S3 « 13IfSm ¡1 If «C * sSagafS & S5 é<5£ 2* If o^ • Ifii O£K D 3 ilif £ § Iti o p I\| § 1 5«SS is y— § 8 I 1 •Sf11 4 î $ Ì.W « »a N n 1M 1« m us YS MG40J2YS50	OCR Scan	MG400J1US51 MG800J1US51 MG300J1US51 MG40J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG400J2VS50 MG2SJ6ES40 MG40001US41 MG806ES42 MG15J6ES40 MG75J2YS50 MG100Q2YS42 mg300q1us41 MG50Q2YS40 mg150j1 MG100J2YS50	PDF
MG200J2YS50 Abstract: 2-94D4A MG75Q2YS50 MG300J2YS50 2-109C1A MG200Q1US41 MG300Q1US41 MG300Q1US51 MG400J2YS50 mg200q2ys50 Text: MHTEPTEKC www.i-t.su info@i-t.su Ten: 495 739-09-95, 644-41-29 M o A y n u IG B T $ u p M b i T o s h i b a fln a n a 3 0 H p a 6 o H nxT eM ne paT yp np0M3B0AMTenb Kofl: Uce lc Icm :o t -4 0 °C a o + 1 2 5 °C : T o s h ib a Ucesat npH lc Tr(typ.j Tf(typ.)	OCR Scan	flnana30H ot-40Â MG200Q1US41 2-109A4A MG300Q1US41 MG300Q1US51 2-109F1A MG400Q1US41 MG200J2YS50 2-94D4A MG75Q2YS50 MG300J2YS50 2-109C1A MG400J2YS50 mg200q2ys50	PDF
IGBT 200A 1200V Abstract: T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40 Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi h MOflynM IGBT b an^aBMTHOM nop^AKe BUP203 (T0220) KpaTKoe onMcaHMe MG50Q2YS40 BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s HGTG12N60A4D HGTG30N60B3D	OCR Scan	bup203 t0220) BUP212 BUP213 BUP313 BUP313D BUP314 BUP314D GT20D101-T0s GT20D201-T0s IGBT 200A 1200V T0247 T0220AB BUP313D IGBT IRG4BC20KD igbt 20A 1200v IGBT 1200V 60A T0247A BUP314D MG50Q2YS40	PDF

Privacy Settings

MG200J Search Results

MG200J Price and Stock

Powerex Power Semiconductors MG200J6ES61

Toshiba America Electronic Components MG200J2YS1

Toshiba America Electronic Components MG200J2YS40AC

MG200J Datasheets (13)

MG200J Datasheets Context Search

Untitled

FC-20 equivalent

Untitled

MG200J2YS50

1000 watts ups circuit diagram with detail

MG200J2YS50

MG200J2YS50

Untitled

set igbt on off Vge

Untitled

MG200J6ES60

SKIIP 33 nec 125 t2

TOSHIBA MG150N2YS40

MG200J2YS50

Untitled

MG200J2YS1

Untitled

Untitled

MG200J2YS50

GT250101

MG15J6ES40

MG40001US41

MG200J2YS50

IGBT 200A 1200V