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    MG150J7KS60 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MG150J7KS60 Toshiba Silicon N Channel IGBT Original PDF
    MG150J7KS60 Toshiba Compact IGBT Modules & Compact IPM Original PDF

    MG150J7KS60 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: MG150J7KS60 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS60 600V/150A 7in1 High Power Switching Applications Motor Control Applications • Integrates inverter and brake power circuit into a single package • The electrodes are isolated from case.


    Original
    PDF MG150J7KS60 00V/150A 2-108G1B

    Untitled

    Abstract: No abstract text available
    Text: MG150J7KS60 TOSHIBA IGBT Module Silicon N Channel IGBT MG150J7KS60 600V/150A 7in1 High Power Switching Applications Motor Control Applications • Integrates inverter and brake power circuit into a single package • The electrodes are isolated from case.


    Original
    PDF MG150J7KS60 00V/150A 2003-1are

    MG150J7KS60

    Abstract: No abstract text available
    Text: MG150J7KS60 TOSHIBA IGBT Module Silicon N Channel IGBT MG150J7KS60 600V/150A 7in1 High Power Switching Applications Motor Control Applications • Integrates inverter and brake power circuit into a single package • The electrodes are isolated from case.


    Original
    PDF MG150J7KS60 00V/150A 2-108G1B MG150J7KS60

    MG150J7KS60

    Abstract: No abstract text available
    Text: MG150J7KS60 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS60 600V/150A 7in1 High Power Switching Applications Motor Control Applications • Integrates inverter and brake power circuit into a single package · The electrodes are isolated from case. ·


    Original
    PDF MG150J7KS60 00V/150A MG150J7KS60

    Untitled

    Abstract: No abstract text available
    Text: MG150J7KS60 TOSHIBA GTR Module Silicon N Channel IGBT MG150J7KS60 600V/150A 7in1 High Power Switching Applications Motor Control Applications • Integrates inverter and brake power circuit into a single package • The electrodes are isolated from case.


    Original
    PDF MG150J7KS60 00V/150A 2-108G1B

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original
    PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    MIG50Q7CSB1X

    Abstract: IPM toshiba MG300Q2YS MG150J7KS60 MIG200Q2CSB1X MG200J6ES60 MG200Q2YS60A MG300Q2YS60A japan servo co KP56LM2-503 MG400Q2YS60A
    Text: New Product Guide Compact IGBT Modules & Compact IPM NEW PRODUCT GUIDE Compact IGBT Modules Features • The new package technology achieved small and compact size. • The new generation IGBT and FRD chips achieved low loss and low emission noise. • Fault-signal output circuit short circuit and overtemperature is included.


    Original
    PDF E87989 MIG50Q7CSB1X IPM toshiba MG300Q2YS MG150J7KS60 MIG200Q2CSB1X MG200J6ES60 MG200Q2YS60A MG300Q2YS60A japan servo co KP56LM2-503 MG400Q2YS60A