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    MG100Q2YS51 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MG100Q2YS51 Toshiba TRANS IGBT MODULE N-CH 1200V 150A 7(2-109C4A) Original PDF
    MG100Q2YS51 Toshiba N channel IGBT Original PDF
    MG100Q2YS51 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG100Q2YS51 Toshiba N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG100Q2YS51A Toshiba GTR MODULE SILICON N CHANNEL IGBT Scan PDF
    MG100Q2YS51A Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Scan PDF

    MG100Q2YS51 Datasheets Context Search

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    MG100Q2YS51

    Abstract: No abstract text available
    Text: MG100Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS51 Unit: mm High Power Switching Applications Motor Control Applications l High input impedance l High speed : tf = 0.3µs Max @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max)


    Original     		PDF MG100Q2YS51 2-109C4A 200transportation MG100Q2YS51

    MG100Q2YS51

    Abstract: No abstract text available
    Text: MG100Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS51 Unit: mm High Power Switching Applications Motor Control Applications High input impedance High speed : tf = 0.3µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode


    Original     		PDF MG100Q2YS51 2-109C4A 66transportation MG100Q2YS51

    IGBT cross reference semikron eupec

    Abstract: 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40
    Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130


    Original     		PDF DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec 150Ne120 FZ800R16KF4 MG200J2YS50 mitsubishi IGBT cross reference semikron Eupec Power Semiconductors IGBT mitsubishi mg300j2ys50 MBM200GS12 FZ1600R12KF4 MG200Q2YS40

    GT30J322

    Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
    Text: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬


    Original     		PDF MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X

    IGBT cross reference semikron eupec

    Abstract: IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40
    Text: IGBT Module Cross Reference DS5468 IGBT Module Cross Reference DS5468-2.0 October 2002 Manufacturer Dimensions Configuration Vces V Ic dc (A) Dynex Part No. FZ1200R33KF2 Module Part No. EUPEC 140x190 SINGLE 3300 1200 DIM1200ESM33 FZ1600R12KF4 EUPEC 140x130


    Original     		PDF DS5468 DS5468-2 FZ1200R33KF2 140x190 DIM1200ESM33 FZ1600R12KF4 140x130 DIM1600FSM12 FF400R12KF4 IGBT cross reference semikron eupec IGBT cross reference semikron 2MBI 200NB-120 IGBT Eupec 150Ne120 MG200J2YS50 mitsubishi MG100Q2YS51 MG400Q1US41 igbt mitsubishi FZ800R16KF4 MG200Q2YS40

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    transistor s51a

    Abstract: No abstract text available
    Text: MG100Q2YS51A T O SH IB A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG100Q2YS51A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage : V C E (s a t) = 3.6V (Max.)


    OCR Scan     		PDF MG100Q2YS51A 961001EAA1 se-03 transistor s51a

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG100Q2YS51A MG1 0 0 Q 2 Y S 5 1 A TENTATIVE TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT HIGH PO W E R SWITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3,t<s Max. Inductive Load


    OCR Scan     		PDF MG100Q2YS51A 961001EAA1 10/vs

    LA-591

    Abstract: No abstract text available
    Text: T O S H IB A MG100Q2YS51 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IG8T MG100Q2YS51 HIGH POW ER SW ITCHING APPLICATIONS M O T O R C O NTRO L APPLICATIONS H igh In p u t Im pedance H igh Speed : tf= 0 .3 //s Max. Inductive Load Low S a tu ratio n Voltage


    OCR Scan     		PDF MG100Q2YS51 961001EAA2 LA-591

    MG100Q2YS51

    Abstract: No abstract text available
    Text: TOSHIBA MG100Q2YS51 MG1 0 0 Q 2 Y S 5 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.)


    OCR Scan     		PDF MG100Q2YS51 00Q2YS51 2-109CE= 10//s MG100Q2YS51

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A TENTATIVE MG100Q2YS51A MG100Q2YS51A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf=0.3^s Max. @Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG100Q2YS51A 961001EAA1

    MG100Q2YS51A

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE MG100Q2YS51A MG1 0 0 Q 2 Y S 5 1 A TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG100Q2YS51A 00Q2YS51 tw-10/zs MG100Q2YS51A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MG100Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 00Q2YS51 HIGH POWER SWITCHING APPLICATIONS M O TOR CONTROL APPLICATIONS High Input Impedance High Speed : tf= O .Z /u s Max. ( Inductive Load Low Saturation Voltage : VCE (sat) =3.6V (Max.)


    OCR Scan     		PDF MG100Q2YS51 00Q2YS51 TjS125Â

    100Q2YS51

    Abstract: No abstract text available
    Text: TO SH IBA M G100Q 2YS51A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG 100Q2YS51 A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. / ^ \ T _3 _J .* _T _ 3 ^ u / i ii u u c ti v t i L /u a u


    OCR Scan     		PDF G100Q 2YS51A 100Q2YS51

    2253A

    Abstract: MG100Q2YS51A 100Q2YS51
    Text: TO SH IBA M G100Q 2YS51A TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG 100Q2YS51 A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. / ^ \ T _3 _J .* _T _ 3 ^ u / i ii u u c ti v t i L /u a u


    OCR Scan     		PDF MG100Q2YS51A 00Q2YS51 2-109C4A 2253A MG100Q2YS51A 100Q2YS51