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    MG100Q2YS50 Search Results

    MG100Q2YS50 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MG100Q2YS50 Toshiba TRANS IGBT MODULE N-CH 1200V 150A 7(2-95A4A) Original PDF
    MG100Q2YS50 Toshiba N channel IGBT Original PDF
    MG100Q2YS50 Toshiba GTR Module Silicon N Channel IGBT Scan PDF
    MG100Q2YS50 Toshiba N CHANNEL IGBT (HIGH PWER SWITCHING, MOTOR CONTROL APPLICATIONS) Scan PDF
    MG100Q2YS50A Toshiba GTR MODULE SILICON N CHANNEL IGBT Scan PDF
    MG100Q2YS50A Toshiba Silicon N-channel IGBT GTR module for high power switching, motor control applications Scan PDF
    MG100Q2YS50A Toshiba GTR Module - Silicon N-Channel IGBT Scan PDF

    MG100Q2YS50 Datasheets Context Search

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    MG100Q2YS50

    Abstract: No abstract text available
    Text: MG100Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3µs Max @Inductive Load Low saturation voltage : VCE (sat) = 3.6V (Max) Enhancement-mode


    Original     		PDF MG100Q2YS50 2-95A4A MG100Q2YS50

    MG100Q2YS50

    Abstract: No abstract text available
    Text: MG100Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs Max @Inductive Load l Low saturation voltage : VCE (sat) = 3.6V (Max)


    Original     		PDF MG100Q2YS50 2-95A4A 20transportation MG100Q2YS50

    TC58DVG14B1FT00

    Abstract: TH58DVG24B1FT00 Ethernet-MAC ic TH58DVG TMP86P203P 721A SOP8 721A TMP86P202P 20-DIP pwm igbt
    Text: ご注意 本資料に掲載されております製品※の一部に2004 年 10 月 1 日付けで三菱 電機株式会社へ譲渡された製品があります。詳しくは弊社営業窓口までお問 い合わせ下さい。 ※対象製品：大容量モジュール事業 自動車用途、高耐圧製品を除く


    Original     		PDF 03-3457-3405FAX. TMPR4938XBG-300 133MHz TC58DVG14B1FT00 TH58DVG24B1FT00 48TSOP TC58DVG14B1FT00 TH58DVG24B1FT00 Ethernet-MAC ic TH58DVG TMP86P203P 721A SOP8 721A TMP86P202P 20-DIP pwm igbt

    GT30J322

    Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
    Text: [2] ⵾ຠ⚫੺ [ 2 ] ⵾ຠ⚫੺ 1. 600 V ࡕࠫࡘ࡯࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉ౉ߒ‫ߣ࠼࡯ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ‬㘻๺㔚࿶ߣߩ࠻࡟࡯࠼ࠝࡈߩᡷༀࠍታ⃻ߒ߹ߒߚ‫ޕ‬ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ૶↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታ⃻ߒ‫ޔ‬㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚ‫ޕ‬


    Original     		PDF MG800J2YS50A) MG300J1US51 MG400J1US51 MG50J2YS50 MG75J2YS50 MG100J2YS50 MG150J2YS50 MG200J2YS50 MG300J2YS50 MG100J7KS50 GT30J322 MP6750 MG200Q2YS40 MG100Q2YS42 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X

    induction cooker fault finding diagrams

    Abstract: MG100J2YS1 nikkei S-200 grease TOSHIBA IGBT MG50J2YS1 MG50J2YS1 induction cooker st induction cooker MOSFET IGBT DRIVERS THEORY nikkei jointal grease nikkei S-200 NIKKEI JOINTAL 200
    Text: [5] Handling Precautions 1 Using Toshiba Semiconductors Safely TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when


    Original     		PDF Z8115 MIL-HDBK-217E S57-1 induction cooker fault finding diagrams MG100J2YS1 nikkei S-200 grease TOSHIBA IGBT MG50J2YS1 MG50J2YS1 induction cooker st induction cooker MOSFET IGBT DRIVERS THEORY nikkei jointal grease nikkei S-200 NIKKEI JOINTAL 200

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    BY575

    Abstract: No abstract text available
    Text: TOSHIBA MG100Q2YS50 MG100Q2YS50 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS U nit in mm M O T O R CONTRO L APPLICATIONS H igh Input Impedance High Speed : tf=0.3/*s Max. @ Inductive Load Low Saturation Voltage


    OCR Scan     		PDF MG100Q2YS50 BY575

    igbt toshiba mg

    Abstract: MG100Q2YS50A
    Text: TO SH IBA MG100Q2YS50A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG100Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. /^ \T _3_J.*_T _3 i g / i u u u c u v e L /u au


    OCR Scan     		PDF MG100Q2YS50A 2-95A4A MG100Qtruments, igbt toshiba mg MG100Q2YS50A

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A MG100Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 00Q2YS50 HIGH POWER SWITCHING APPLICATIONS U nit in mm M O TOR CONTROL APPLICATIONS High Input Impedance High Speed : tf= O .Z /u s Max. ( Inductive Load Low Saturation Voltage : VCE (sat) =3.6V (Max.)


    OCR Scan     		PDF MG100Q2YS50 00Q2YS50 TjS125Â

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MG100Q2YS50A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG100Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. /^ \T _3_J.*_T _3 i g / i u u u c u v e L /u au


    OCR Scan     		PDF MG100Q2YS50A 300/s,

    igbt toshiba mg

    Abstract: 100Q2YS50A 100Q2 100Q2YS50
    Text: TOSHIBA MG 100Q2YS50A MG100Q2YS50A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS U nit in mm MOTOR CONTROL APPLICATIONS • • • • • • High Input Impedance High Speed : tf= 0.3^s Max. @Inductive Load Low Saturation Voltage


    OCR Scan     		PDF 100Q2YS50A MG100Q2YS50A 9610Q1EAA1 10/is igbt toshiba mg 100Q2YS50A 100Q2 100Q2YS50

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MG100Q2YS50A MG1 0 0 Q 2 Y S 5 0 A TENTATIVE T O SH IB A GTR M O D U LE SILICON N C H A N N EL IGBT Unit in mm HIGH P O W E R SW IT C H IN G A PPLIC A TIO N S M O T O R CO N TRO L A PPLIC A TIO N S • • • • • • High Input Impedance High Speed : tf=0.3^s Max.


    OCR Scan     		PDF MG100Q2YS50A 961001EAA1

    MG100Q2YS50

    Abstract: No abstract text available
    Text: TO SHIBA MG100Q2YS50 MG100Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.)


    OCR Scan     		PDF MG100Q2YS50 2-95A4A 10//s MG100Q2YS50

    Untitled

    Abstract: No abstract text available
    Text: MG100Q2YS50A T O SH IB A TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG100Q2YS50A HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage : V CE (sat) = 3.6V (Max.)


    OCR Scan     		PDF MG100Q2YS50A 961001EAA1