Untitled
Abstract: No abstract text available
Text: Document 748 SMT Mini Wideband Transformer • 3 dB bandwidth: 0.1 MHz to 3.5 GHz • 1/4 Watt RF input power • 250 mA max current rating. Core material Ferrite Terminations RoHS compliant tin-silver-copper over silver-platinumglass frit. Weight 83.3 mg
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SR-332
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Untitled
Abstract: No abstract text available
Text: Document 512 SMT Gate Driver Transformers These surface mount transformers are designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits operating from 50 kHz to as high as 2 MHz. They offer low leakage inductance, excellent interwinding capacitance and 1500 Vdc primary to secondary isolation.
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DA2319-AL_
DA2318-AL_
DA2320-AL_
DA2317-AL_
323max
DA2318-AL,
DA2319-AL
DA2317-AL,
DA2320-AL
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Untitled
Abstract: No abstract text available
Text: Document 512 SMT Gate Drive Transformers These surface mount transformers are designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits operating from 50 kHz to as high as 2 MHz. They offer low leakage inductance, excellent interwinding capacitance and 1500 Vdc primary to secondary isolation.
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DA2318-AL,
DA2319-AL
DA2317-AL,
DA2320-AL
323max
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DA2319-AL
Abstract: DA2320-ALC hp 4192 DA2320
Text: Document 512 SMT Gate Drive Transformers These surface mount transformers are designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits operating from 50 kHz to as high as 2 MHz. They offer low leakage inductance, excellent interwinding capacitance and 1500 Vdc primary to secondary isolation.
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PDF
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DA2319-AL_
DA2318-AL_
DA2320-AL_
DA2317-AL_
323max
DA2318-AL,
DA2319-AL
DA2317-AL,
DA2320-AL
DA2319-AL
DA2320-ALC
hp 4192
DA2320
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Untitled
Abstract: No abstract text available
Text: Document 512 SMT Gate Drive Transformers These surface mount transformers are designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits operating from 50 kHz to as high as 2 MHz. They offer low leakage inductance, excellent interwinding capacitance and 1500 Vdc primary to secondary isolation.
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Original
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PDF
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DA2319-AL_
DA2318-AL_
DA2320-AL_
DA2317-AL_
323max
DA2318-AL,
DA2319-AL
DA2317-AL,
DA2320-AL
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Untitled
Abstract: No abstract text available
Text: Document 512 SMT Gate Drive Transformers These surface mount transformers are designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits operating from 50 kHz to as high as 2 MHz. They offer low leakage inductance, excellent interwinding capacitance and 1500 Vdc primary to secondary isolation.
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Original
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PDF
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DA2319-AL_
DA2318-AL_
DA2320-AL_
DA2317-AL_
323max
DA2318-AL,
DA2319-AL
DA2317-AL,
DA2320-AL
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low Pressure Sodium Lamps circuit
Abstract: high Pressure mercury vapour Lamps circuit HGR15 NA34 GR101 Pb-RE-11 EEFL C9H13N fumarate induction lamp
Text: GR101-03I General Specification on Chemical Substances Ver.10.0 1. Objective NTT Electronics Corp. hereafter, NEL has established the”General Specifications on Chemical Substances” to clearly specify the requirements and to ensure the control of chemical substances specifications contained
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PDF
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GR101-03I
1000ppm
low Pressure Sodium Lamps circuit
high Pressure mercury vapour Lamps circuit
HGR15
NA34
GR101
Pb-RE-11
EEFL
C9H13N
fumarate
induction lamp
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DA2320-AL
Abstract: No abstract text available
Text: Document 512 SMT Gate Drive Transformers These surface mount transformers are designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits operating from 50 kHz to as high as 2 MHz. They offer low leakage inductance and excellent interwinding capacitance. Primary to secondary isolation is 1500 Vdc, and for DA2317-AL and
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DA2317-AL
DA2320-AL,
DA2319-Ant/HP
323max
DA2318-AL,
DA2319-AL
DA2317-AL,
DA2320-AL
DA2320-AL
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Untitled
Abstract: No abstract text available
Text: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.
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PDF
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DA2317-AL
DA2320-AL,
323max
DA2318-AL,
DA2319-AL
DA2317-AL,
DA2320-AL
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DA2320
Abstract: DA2320-ALC DA2319-AL DA2320-AL DA2317-AL billion transformer SR-332 da2319
Text: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.
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DA2317-AL
DA2320-AL,
323max
DA2317-AL,
DA2320-AL
DA2318-AL,
DA2319-AL
DA2320
DA2320-ALC
DA2319-AL
DA2320-AL
DA2317-AL
billion transformer
SR-332
da2319
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Untitled
Abstract: No abstract text available
Text: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.
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DA2317-AL
DA2320-AL,
30parts
323max
DA2318-AL,
DA2319-AL
DA2317-AL,
DA2320-AL
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Untitled
Abstract: No abstract text available
Text: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.
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DA2317-AL
DA2320-AL,
323max
DA2318-AL,
DA2319-AL
DA2317-AL,
DA2320-AL
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Untitled
Abstract: No abstract text available
Text: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.
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PDF
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DA2317-AL
DA2320-AL,
303max
DA2318-AL,
DA2319-AL
DA2317-AL,
DA2320-AL
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Untitled
Abstract: No abstract text available
Text: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.
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PDF
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DA2317-AL
DA2320-AL,
323max
DA2318-AL,
DA2319-AL
DA2317-AL,
DA2320-AL
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|
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Untitled
Abstract: No abstract text available
Text: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operatingfrequency:50kHz–2MHz •
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DA2317-ALà
DA2320-AL,
DA2318-AL,
DA2319-AL
DA2317-AL,
DA2320-AL
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Untitled
Abstract: No abstract text available
Text: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.
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PDF
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DA2317-AL
DA2320-AL,
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Untitled
Abstract: No abstract text available
Text: Document 512 SMT Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For DA2317-AL and DA2320-AL, isolation between secondaries is 500 Vdc.
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DA2317-AL
DA2320-AL,
323max
DA2318-AL,
DA2319-AL
DA2317-AL,
DA2320-AL
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Untitled
Abstract: No abstract text available
Text: GATE DRIVE TRANSFORMERS Outgassing Compliant Gate Drive Transformers • Designed for high switching speed, transformer coupled MOSFET and IGBT gate drive circuits. • Operating frequency: 50 kHz – 2 MHz • Primary to secondary isolation: 1500 Vdc. For 1011 and
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CP512â
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JA4220-AL
Abstract: No abstract text available
Text: Document 748 SMT Mini Wideband Transformer • 3 dB bandwidth: 0.1 MHz to 3.5 GHz • 300 V interwinding isolation, 1/4 Watt RF input power • 250 mA max current rating. Core material Ferrite Terminations RoHS compliant tin-silver-copper over silver-platinumglass frit.
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SR-332
JA4220-AL
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RF TRANSFORMER 2 UH
Abstract: No abstract text available
Text: Document 748 SMT Mini Wideband Transformer • 3 dB bandwidth: 0.1 MHz to 3.5 GHz • 300 V interwinding isolation, 1/4 Watt RF input power • 250 mA max current rating. Core material Ferrite Terminations RoHS compliant tin-silver-copper over silver-platinumglass frit.
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SR-332
RF TRANSFORMER 2 UH
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PFD3215
Abstract: pfd3215 wideband
Text: Document 982W-1 Wideband Transformers – PFD3215 • Typical applications are as impedance or isolation transformer • Can be used for balanced to unbalanced balun conversion • 1/4 Watt input RF power rating • Low DCR values Insertion DCR Bandwidth
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82W-1
PFD3215
PFD3215-391ME_
PFD3215-102ME_
PFD3215-182ME_
PFD3215-222ME_
PFD3215-332ME_
PFD3215-472ME_
PFD3215-682ME_
PFD3215-103ME_
PFD3215
pfd3215 wideband
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Untitled
Abstract: No abstract text available
Text: Document 982W-1 Wideband Transformers – PFD3215 • Typical applications are as impedance or isolation transformer • Can be used for balanced to unbalanced balun conversion • 1/4 Watt input RF power rating • Low DCR values Insertion DCR Bandwidth
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82W-1
PFD3215
PFD3215-103
82W-2
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EE ferrite core
Abstract: rod core ferrite ferrite rod cores core EE 20
Text: FERRITE C O R ES* These cores are designed for wire-winding. • ■ ■ ■ ■ ■ APPLICATIONS ■ ■ ■ Switching power supplies Choke coils Current transformers UA Core: U A 4 5 -U A 4 7 U-shaped Cores Pot Cores Multi-Hole Cores Rod Cores Drum Shaped Cores
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OCR Scan
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PDF
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EI12-EI40
EE10-EE40
ER32-ER55
E-06-E.
062E-2
EE ferrite core
rod core ferrite
ferrite rod cores
core EE 20
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702 H
Abstract: J993 EPA045-X bawa
Text: _Starlan Isolation Transformers EpA045-X ELEGTnONICSi INC. • Designed for Hub and Node Applications ■ Hipot 2000 Ynris ■ ■ ■ M eets the high-Reliability Specs of IEEE S02.3 Standard Type 1 Ease 5 ■ ■ Available in Single and Dual Low Profile Packages
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PDF
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EPA045-X
13J91
702 H
J993
EPA045-X
bawa
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