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    S1B02

    Abstract: lts 542 2N6761
    Text: H E D I MflS5M52 INTERNATIONAL 000^314 T | Data Sheet No. PD-9.336D RECTIFIER T - 3 7 - / f INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IQR *JANTXV2NB762 *JAI\ITX2NB762 JEDEC REGISTERED IU-CHAIUIMEL G POWER MOSFETs 2N 6762 2N67G1 ‘ QUALIFIED TO MIL-S-19500/542


    OCR Scan     		PDF MflS5M52 MIL-S-19500/542 JANTXV2NB762 JAI\ITX2NB762 2N67G1 para-11 G-294 S1B02 lts 542 2N6761

    IRFH150

    Abstract: UNF 0243 IRFH150 E 9410a 1RFH150 T0210 10S4
    Text: H E D § M ÔSS4SE IN T E R N A T IO N A L GOÜ ^blG 2 | Data Sheet No. PD-9.410A j R E C T IF IE R INTERNATIONAL RECTIFIER IO R HEXFET* TRANSISTORS IRFH15Q N-CHANNEL POWER MQSFETs Features: 100 Volt, 0.06 Ohm HEXFET T he HEXFET technology Is the key to International


    OCR Scan     		PDF IRFH15Ã G-591 IRFH150 T-39-13 G-592 UNF 0243 IRFH150 E 9410a 1RFH150 T0210 10S4