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Text: International Tor ; Rectifier 4 fiS 5 4 5 B HEXFET Pow er M O S F E T IN T E R N A T IO N A L R E C T I F I E R • • • • • 0015154 b?5 PD-9.650A IN R IRFI730G Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm
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IRFI730G
O-220
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER 2bE D • T~ M A S S E S 0010751 3 ■ X C 3 R | IN T E R N A T IO N A L . R E C T I F IE R J 1 R23D SERIES 2600-2000 VOLTS RANGE 320 AMP AVG STUD MOUNTED DIFFUSED JUNCTION RECTIFIER DIODES VOLTAGE RATINGS J x PA RT \ t NUMBS* : : l
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R33024A
R33022B
R23D26A
4flS5452
001Q7SA
Mfl554S2
R23DR
DQ-205AB
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Abstract: No abstract text available
Text: International S Rectifier PD - 2.269A 62CNQ030 SCHOTTKY RECTIFIER 60Amp Major Ratings and Characteristics Characteristics Desciption/Features 62CNQ030 Units lp AV Rectangular waveform 60 A Vrrm 30 V Ifsm @ tp = 5ps sine 4600 A VF 0.35 V -55 to 150 °C @ 30Apk, Tj = 125°C
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62CNQ030
60Amp
30Apk,
62CNQ030
RH89BB,
Mfl554S2
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IRC530-007
Abstract: IRC530 international rectifier GTO 2A38 IRC630 IRC531 IRF531 IRC530-008 DIODE EG 83A I-10A
Text: HE D I MflSS4Sa GGDfliGM 3 | Data Sheet No. PD-9.454C T ? tz < / INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* LOWER ON STATE RESISTANCE, 175°C OPERATING TEMPERATURE HEXSense —Current; Sense IRC530 C Series
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T0-220
O-220
0L74S)
IRC530
IRC531
IRC530-007
IRC531-007
IRC530-008
IRC531-008
international rectifier GTO
2A38
IRC630
IRC531
IRF531
DIODE EG 83A
I-10A
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Untitled
Abstract: No abstract text available
Text: P D 9.1573 International IOR Rectifier IRG4PH50UD PRELIMINARY INSULATED G A TE BIPOLAR TRANSISTOR WITH ULTRAFAST SO FT R EC O VER Y DIODE Features UltraFast CoPack IGBT • UltraFast: O ptim ized for high operating V ces = 1200V frequencies up to 40 kH z in hard switching,
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IRG4PH50UD
55M52
002023b
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