TQTRX
Abstract: No abstract text available
Text: Production Released Process TQRLC TQTRx Advanced PassivesFoundry Foundry Service Service GaAs MESFET Passivation Via Metal 3 Metal 3 - 5 um Features • • Metal 2 Dielectric Metal 1 Metal 1 Metal 2 - 2 um • Metal 1 - 2 um Dielectric MIM Metal Metal 0 MIM Capacitor
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RF MESFET S parameters
Abstract: TQTRX
Text: Production Released Process TQTRp TQTRx Advanced Passives MESFETFoundry Foundry Service Service GaAs &MESFET Passivation Via Metal 3 Metal 3 - 5 um Metal 2 Dielectric Metal 1 Metal 1 Metal 2 - 2 um • • Dielectric MIM Metal NiCr Metal 0 N+ Isolation Implant
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GaAs 0.15 um pHEMT
Abstract: RF TRANSISTOR 10GHZ microwave office RF TRANSISTOR 10GHZ low noise TRANSISTOR 10GHZ IDSS Semiconductors
Text: Production Process TQPHT 0.5 um pHEMT Foundry Service Features Metal 2 - 4um Metal 2 Dielectric Dielectric • Metal 1 - 2um Metal 1 Metal 1 • • Dielectric NiCr MIM Metal • • Metal 0 Nitride N+ Pseudomorphic Channel pHEMT Isolation Implant Isolation
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150-mm
GaAs 0.15 um pHEMT
RF TRANSISTOR 10GHZ
microwave office
RF TRANSISTOR 10GHZ low noise
TRANSISTOR 10GHZ
IDSS Semiconductors
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Q302
Abstract: phemt Lithography
Text: Advanced Information TQPHT 0.5 um pHEMT Foundry Service Features Metal 2 - 4um Metal 2 Dielectric Dielectric • Metal 1 - 2um Metal 1 Metal 1 • • Dielectric NiCr MIM Metal • • Metal 0 Nitride N+ Pseudomorphic Channel pHEMT Isolation Implant Isolation
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TQTRX
Abstract: TQ5M31 TQ3M31 79GHz 121GHz mesfet
Text: Production Process TQTRx GaAs MESFET Foundry Service Features Metal 2 - 4um Metal 2 • Dielectric Metal 1 • Dielectric Metal 1 - 2um Metal 1 • Dielectric NiCr MIM Metal Metal 0 N+ N+ Isolation Implant N-/P- Channel E,D,G MESFET NiCr Resistor MIM Capacitor
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metal detector plans
Abstract: metal detector plans schematic digital metal detector Triquint TQPED PHEMT agilent ads TQPED metal detector metal detector schematic GaAs 0.15 um pHEMT agilent pHEMT transistor
Text: Pre-Production Process TQPED 0.5 um E/D pHEMT Foundry Service Features Metal 2 - 4um Metal 2 Dielectric Dielectric Metal 1 - 2um Metal 1 Metal 1 • • • • • Dielectric NiCr MIM Metal Metal 0 Nitride N+ Pseudomorphic Channel MIM Capacitor E-Mode / D-Mode
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150-mm
metal detector plans
metal detector plans schematic
digital metal detector
Triquint TQPED PHEMT
agilent ads
TQPED
metal detector
metal detector schematic
GaAs 0.15 um pHEMT
agilent pHEMT transistor
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Untitled
Abstract: No abstract text available
Text: SB16-100MA SB16-100AM SB16-100RM SEME LAB MECHANICAL DATA Dimensions in mm DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI–REL APPLICATIONS FEATURES • HERMETIC TO220 METAL PACKAGE • ISOLATED CASE • SCREENING OPTIONS AVAILABLE TO220 METAL PACKAGE
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SB16-100MA
SB16-100AM
SB16-100RM
SB16-100M
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Rf detector HSMS 8202
Abstract: Waveform Clipping With Schottky schottky diode hsms8202 HSMP-2810 A7 diode schottky HSMP 2800 hsms2827 SCHOTTKY CROSS REFERENCE very high current schottky diode HSMP-281B
Text: Applications Information Schottky Diode Fundamentals The Schottky diode is a rectifying metal-semiconductor contact formed between a metal and n-doped or p-doped semiconductor. When a metal-semiconductor junction is formed, free electrons flow across the junction from the
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thisT-143
HSMS-2800
HSMS-2802
HSMS-2803
HSMS-2804
HSMP-2810
HSMS-2812
HSMS-2813
HSMS-2814
HSMS-2820
Rf detector HSMS 8202
Waveform Clipping With Schottky
schottky diode hsms8202
A7 diode schottky
HSMP 2800
hsms2827
SCHOTTKY CROSS REFERENCE
very high current schottky diode
HSMP-281B
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Untitled
Abstract: No abstract text available
Text: SB16-100MA SB16-100AM SB16-100RM SEME LAB MECHANICAL DATA Dimensions in mm DUAL SCHOTTKY BARRIER DIODE IN TO220 METAL PACKAGE FOR HI–REL APPLICATIONS FEATURES • HERMETIC TO220 METAL PACKAGE • ISOLATED CASE • SCREENING OPTIONS AVAILABLE TO220 METAL PACKAGE
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SB16-100MA
SB16-100AM
SB16-100RM
SB16-100M
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circuit diagram of 60 LED bulbs in 230v
Abstract: 48V dc supply FROM 415VAC led lamp 230v simple circuit diagram 230v led lamp in watts circuit diagram VDE0660 led lamp 230v circuit diagram 415vac CIRCUIT DIAGRAM airpax 24v ac 230v operating power led driver ckt diagram 24V-415V
Text: Control Switches and Signaling Devices 22.5 mm Metal Series Control Switches and Signaling Devices, 22.5mm Metal Series 292 Non-Illuminated Operators, 22.5mm Metal Series 294 Illuminated Operators, 22.5mm Metal Series 296 Pilot Lights and Lens Assemblies,
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230VAC
AS2PLBR5230AC
AS2PLBR6230AC
44x32
AS2PLBT4230/24
AS2PLBT3230/24
AS2ATL3F2F4IO130
40x30
circuit diagram of 60 LED bulbs in 230v
48V dc supply FROM 415VAC
led lamp 230v simple circuit diagram
230v led lamp in watts circuit diagram
VDE0660
led lamp 230v circuit diagram
415vac CIRCUIT DIAGRAM
airpax 24v
ac 230v operating power led driver ckt diagram
24V-415V
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Microwave power GaAs FET data
Abstract: TGA4510-EPU TGC1430F-EPU TGC1452-EPU pHEMT fet ft 25 GHZ
Text: 0.25-µm mmW pHEMT 3MI Process Data Sheet PROTECTIVE OVERCOAT 4.0 µm METAL 2 2.0 µm METAL 1 2000 Å NITRIDE 2 MIM METAL 500 Å NITRIDE 1 0.75 µm METAL 0 TaN RESISTOR 500 Å NITRIDE 0 T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE
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640 t fet
Abstract: fet ft 20 GHZ fet ft 25 GHZ
Text: 0.25-µm XKu pHEMT 3MI Process Data Sheet PROTECTIVE OVERCOAT 4.0 µm METAL 2 2.0 µm METAL 1 2000 Å NITRIDE 2 MIM METAL 500 Å NITRIDE 1 0.75 µm METAL 0 TaN RESISTOR 500 Å NITRIDE 0 T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE
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HBT transistor
Abstract: TQHBT3 5PAE HBT 01 05G schematic mans gummel
Text: Production Process TQHBT3 InGaP HBT Foundry Service Features • • Metal 2 - 4um • Dielectric • • Metal 1 - 2um Metal 1 - 2um Dielectric E B C Emitter MIM NiCr B Base Collector Metal 0 C • • • Sub Collector Isolation Implant Buffer & Substrate
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D1010
Abstract: pspice model gate driver
Text: Production Process TQHiP Power MESFET Foundry Service Features Air Bridge - 4um • • Metal 1 Metal 1 – 2 um NiCr MIM Metal Metal 0 N+ N+ Isolation Implant N-/P- Channel D MESFET MIM Capacitor • • • • NiCr Resistor Semi-Insulating GaAs Substrate
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Untitled
Abstract: No abstract text available
Text: MBRAF360T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRAF360T3G
MBRAF360/D
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DIODE B36
Abstract: part marking b36 diode Schottky Diode B36 marking B36 B36 Schottky Diode 1B marking semiconductor b36 b36 surface mount diode
Text: MBRS360T3 Preferred Devices Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS360T3
10IPK/IO
DIODE B36
part marking b36 diode
Schottky Diode B36
marking B36
B36 Schottky Diode
1B marking
semiconductor b36
b36 surface mount diode
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marking B13 diode SCHOTTKY
Abstract: No abstract text available
Text: MBRS130T3 Preferred Device Surface Mount Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay
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MBRS130T3
marking B13 diode SCHOTTKY
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DIODE SD51
Abstract: 12v zener diode JEDEC 1N SD51
Text: 1N6097 1N6098 SD51 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifiers . . . using the platinum barrier metal in a large area metal-to-siiicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal
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1N6097
1N6098
DIODE SD51
12v zener diode JEDEC 1N
SD51
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DIODE SD51
Abstract: 5817 SOD-123 bly 83 Motorola Switchmode SD51
Text: 1N6097 1N6098 SD51 MOTOROLA I SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifiers . . . using the platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal
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150-C
1N6097
1N6098
DIODE SD51
5817 SOD-123
bly 83
Motorola Switchmode
SD51
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L279
Abstract: l6112 L1915
Text: Metal Package LEDs Metal package LEDs assure high reliability These infrared emitting diodes are hermetically sealed in a metal package that offer high reliability. The L2791 and L7560 series use a GaAlAs element with a microball lens directly cemented to
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L2791
L7560
KLEDB0026EB
KLEDB0027EA
L3989-0
KLEO0OO29EA
KLEDB0030EC
L7558-01
KLEDB0073EA
L279
l6112
L1915
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M 4 3171 opto
Abstract: 9571 gh opto 3171 MBR6545 3171 opto SOT223 6 pin
Text: MOTOROLA MBR6535 MBR6545 SEMICONDUCTOR TECHNICAL DATA MBR6545 is a Motorola Preferred Device Switchmode Power Rectifiers . . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact.
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MBR6535
MBR6545
MBR6545
DO-35
M 4 3171 opto
9571 gh
opto 3171
3171 opto
SOT223 6 pin
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mbr6045
Abstract: BR6045 MBR6035 equivalent
Text: MOTOROLA MBR6035 MBR6045 • SEMICONDUCTOR TECHNICAL DATA Switchmode Power Rectifiers MBRS045 Is a Motorola Preferred Device . . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact,
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MBR6035
MBR6045
MBRS045
mbr6045
BR6045
MBR6035 equivalent
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diode sy 164 dl
Abstract: diode sy 164 02N2222 b6045
Text: MOTOROLA MBR6035 MBR6045 • SEMICONDUCTOR TECHNICAL DATA Switchm ode Power Rectifiers MBR6045 Is a Motorola Preferred Device . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact.
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MBR6035
MBR6045
MBR6045
diode sy 164 dl
diode sy 164
02N2222
b6045
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rca 2n3375
Abstract: 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor
Text: RF Power Transistors Featuring “overlay” Construction For HF-VHF-UHF Microwave Applications M olded-Silicone Hermetic Hermetic Hermetic Plastic Package Ceramic-Metal Ceramic-Metal Strip-L. Package Coaxial Package Small Ceramic-Metal Coaxial Package (Large)
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000-Series
2N1492
RCA-CA3000
RFT-700E/2L
1076R5
rca 2n3375
2N3553 equivalent
RCA TO60 TRANSISTORS
40281
40280
RCA RF POWER TRANSISTOR
CD2152
2N2876
RCA Transistors
rca power transistor
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