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    MESFET SIC Search Results

    MESFET SIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS6E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 6 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    MESFET SIC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TH 2066.4

    Abstract: No abstract text available
    Text: PRELIMINARY CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CRF24010D CRF24010 CRF240 CRF24010D TH 2066.4

    60522

    Abstract: 8822 TRANSISTOR CuMoCu CRF24010 CRF24010D 61256 30639
    Text: PRELIMINARY CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CRF24010D CRF24010 CRF240 CRF24010D 60522 8822 TRANSISTOR CuMoCu 61256 30639

    30639

    Abstract: CuMoCu Immo 65808 TH 2066.4 83348 CRF24010 CRF24010D 98737 transistor 13602
    Text: CRF24010D 10 W SiC RF Power MESFET Die Cree’s CRF24010 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CRF24010D CRF24010 CRF240 CRF24010D 30639 CuMoCu Immo 65808 TH 2066.4 83348 98737 transistor 13602

    ATC600S

    Abstract: AVX0805 AVX1206 CRF35010
    Text: PRELIMINARY CRF35010F 10 W, 3400-3800 MHz, SiC RF Power MESFET for WiMAX Cree’s CRF35010 is an internally matched silicon carbide SiC RF power metal-semiconductor field-effect transistor (MESFET) designed specifically for 802.16-2004 WiMAX Fixed Access applications. SiC has


    Original     		PDF CRF35010F CRF35010 CRF350 CRF35010F ATC600S AVX0805 AVX1206

    CRF24060

    Abstract: CRF24060F C17AH TRANSISTOR SUBSTITUTION TRANSISTOR SUBSTITUTION DATA BOOK CRF-24060 rogers
    Text: CRF24060 60 W, SiC RF Power MESFET Cree’s CRF24060 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24060 CRF24060 CRF240 CRF24060F C17AH TRANSISTOR SUBSTITUTION TRANSISTOR SUBSTITUTION DATA BOOK CRF-24060 rogers

    25V/FTP 50210

    Abstract: CRF24060F
    Text: PRELIMINARY CRF24060 60 W, SiC RF Power MESFET Cree’s CRF24060 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24060 CRF24060 CRF240 25V/FTP 50210 CRF24060F

    TC 9164 N

    Abstract: 95160 85713 CuMoCu CRF24060 CRF24060D F240 08816
    Text: CRF24060D 60 W SiC RF Power MESFET Die Cree’s CRF24060 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24060D CRF24060 CRF24060D TC 9164 N 95160 85713 CuMoCu F240 08816

    ATC1206

    Abstract: AVX08051C222MAT2A CRF24010 JESD22-A114 CRF24010F HI1206 DSA00291593.txt
    Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F ATC1206 AVX08051C222MAT2A JESD22-A114 CRF24010F HI1206 DSA00291593.txt

    C17AH

    Abstract: CRF24060F CRF24060
    Text: PRELIMINARY CRF24060 60 W, SiC RF Power MESFET Cree’s CRF24060 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24060 CRF24060 CRF240 C17AH CRF24060F

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F

    CRF24010F

    Abstract: 0592 transistor substitution chart atc 17-33 CRF24010P substrate 106-682 2244 PORCELAIN CRF24010 127324
    Text: CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F CRF24010F 0592 transistor substitution chart atc 17-33 CRF24010P substrate 106-682 2244 PORCELAIN 127324

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CRF24010 10 W, SiC RF Power MESFET Cree’s CRF24010 is an unmatched silicon carbide SiC RF power MetalSemiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24010 CRF24010 CRF240 F24010F

    Untitled

    Abstract: No abstract text available
    Text: CRF24060D 60 W SiC RF Power MESFET Die Cree’s CRF24060 is a silicon carbide SiC RF power Metal-Semiconductor Field-Effect Transistor (MESFET). SiC has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher


    Original     		PDF CRF24060D CRF24060 CRF24060D

    cgh60120D

    Abstract: 204C gan7
    Text: APPLICATION NOTE Thermal Performance Guide for High Power SiC MESFET and GaN HEMT Transistors Introduction The objective of this application note is to provide users of Cree wide bandgap devices with a guideline of the thermal performance of high power SiC MESFET and GaN HEMT transistors. It explains


    Original     		PDF APPNOTE-010 cgh60120D 204C gan7

    MESFET SiC

    Abstract: CAPACITOR, Ceramic, .005 UF 05003-001 "silicon carbide" FET Cree Microwave CRF-05003-101 silicon carbide powder "silicon carbide" device transistor mesfet
    Text: CRF-05003-001 CRF-05003-101 MICROWAVE 3W SiC RF Power MESFET Self-Biased Amplifier Features • • • • • • • CASE STYLE 001 CRF-05003-001 Applications 10 dB Small Signal Gain • Class A Operation 3 W Minimum P1dB • General Purpose Amplifiers


    Original     		PDF CRF-05003-001 CRF-05003-101 CRF-05003 MESFET SiC CAPACITOR, Ceramic, .005 UF 05003-001 "silicon carbide" FET Cree Microwave CRF-05003-101 silicon carbide powder "silicon carbide" device transistor mesfet

    Cree Microwave

    Abstract: CRF-24060 silicon carbide transistor 20607 20607 ma 75 809
    Text: CRF-24060-101 60 W SiC RF Power MESFET PRELIMINARY Features Applications • • • • • • • • • • • • • • 13 dB Small Signal Gain 50 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation Up to 2.7 GHz Operation


    Original     		PDF CRF-24060-101 CRF-24060 Cree Microwave silicon carbide transistor 20607 20607 ma 75 809

    169113

    Abstract: 174867 173425
    Text: CRF-24060-101 60 W SiC RF Power MESFET PRELIMINARY Features Applications • • • • • • • • • • • • • • 13 dB Small Signal Gain 50 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation Up to 2.7 GHz Operation


    Original     		PDF CRF-24060-101 CRF-24060 169113 174867 173425

    Untitled

    Abstract: No abstract text available
    Text: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 Pill CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage


    Original     		PDF CRF-24010-001 CRF-24010-101 CRF-24010

    CRF-24010-101

    Abstract: CRF-24010 CRF-24010-001 88933 42676
    Text: CRF-24010-001 CRF-24010-101 10 W SiC RF Power MESFET CASE STYLE 001 Pill CRF-24010-001 PRELIMINARY Features Applications • • • • • • • • • • • • • • 15 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage


    Original     		PDF CRF-24010-001 CRF-24010-101 CRF-24010 CRF-24010-101 CRF-24010-001 88933 42676

    CRF-22010

    Abstract: CRF-22010-001 CRF-22010-101 155958
    Text: CRF-22010-001 CRF-22010-101 10 W SiC RF Power MESFET Features Applications • • • • • • • • • • • • 12 dB Small Signal Gain 10 W Minimum P1dB 48 V Operation High Breakdown Voltage High Temperature Operation Up to 3 GHz Operation High Efficiency


    Original     		PDF CRF-22010-001 CRF-22010-101 CRF-22010 CRF-22010-001 CRF-22010-101 155958

    v628

    Abstract: CFK22 d200pa
    Text: SIC D TELEFUNKEN ELECTRONIC TilUKFdDMKllM electronic • fl^SOOU 0005401 4 T - 3/- Z S~ CFK22 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common Gate 1 configuration;


    OCR Scan     		PDF CFK22 569-GS v628 CFK22 d200pa

    Transistor BC 227

    Abstract: transistor bf 910 CF-910 BC238C transistor marking v12 ghz transistor BF 235
    Text: TELEFUNKEN ELECTRONIC âlC D • ô'téGO'ifei 000531a *5 7 W Ê M G G CF 910 Marked with: CF1 TFitLitFdflKlKdM] electronic Creative Technologies - T = - 3 / - 2 , s r N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications:


    OCR Scan     		PDF 000531a 569-GS Transistor BC 227 transistor bf 910 CF-910 BC238C transistor marking v12 ghz transistor BF 235

    TRANSISTOR BC 707

    Abstract: CFK40 transistor bf 274 BF 273 transistor
    Text: TELEFUNKEN ELECTRONIC SIC II • 8'IBOO‘ib 0Q05M13 = v -s z -a s - TitLKFtUlMKiMl electronic CFK40 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications; Gain controlled amplifiers up to 2 GHz in common Gate 1 configuration; in wireless telephone, broadcast sets, cabel TV and equipments with


    OCR Scan     		PDF 0Q05M13 CFK40 569-GS TRANSISTOR BC 707 CFK40 transistor bf 274 BF 273 transistor