veam
Abstract: pioneer corporation nemesis dsub military itt CIRCULAR connector ITT VEAM wearable audio computers
Text: Interconnect Solutions Cannon, VEAM, BIW 50% Lighter 60% Smaller 100% Sealed 50% Lighter – 60% Smaller – 100% Sealed Soldiers are being equipped with advanced technology at an increasing rate resulting in a unified system where they become the primary decision making point for missions.
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IRLML0030
Abstract: IRLB3034 IRFB4110 irfp4004 irls4030 IRFB4020PBF IRFP4568 IRFP4229 HEXFEt Power MOSFET Design Guide IRLB3036
Text: Benchmark MOSFETs | Selection Guide Product Line Overview Broad Portfolio of MOSFETS Targeting Multiple Market Segments Industrial Key Differentiators Applications Key Products Energy Saving Products • Appliances • Digital Control ICs Integrated design platforms that
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0435A
IRLML0030
IRLB3034
IRFB4110
irfp4004
irls4030
IRFB4020PBF
IRFP4568
IRFP4229
HEXFEt Power MOSFET Design Guide
IRLB3036
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Untitled
Abstract: No abstract text available
Text: THYRISTOR MODULE AK55GB40/80 UL!E76102 M Power Thyristor Module A K 5 5 G B series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage ratings up to 1,600 V are available, and electrically isolated mounting base make your
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AK55GB40/80
E76102
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62506f
Abstract: No abstract text available
Text: Diodes •R ectifier Diodes [Center-tap type] ■R ectifier Diodes Ta=25 C ' V* Absolute Maximum Ratings Type No. Vhm to (V (A) Tj (A) 200 ■54 400 S F P M -6 2 200 -6 4 400 Type No. Vf Tstg <C) S F P M -5 2 ïtectnca! Cna'actenttcs Con<V] 01 VnM to ÍV)
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TMM-22S
62506f
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lc dash 2 b-5
Abstract: No abstract text available
Text: CNY17 TRIOS Phototransistor Optocoupler FEATURES • High Current Transfer Ratio CNY17-1,40 to 80% CNY17-2, #3 to 125% CNY17-3,100 to 200% CNY17-4,160 to 320% • Breakdown Voltage, S^OOVACrms • Fleld-Effect Stable by TRIOS* • Long Teim Stability • Industry Standard Oual-in-Llne Package
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CNY17
CNY17-1
CNY17-2,
CNY17-3
CNY17-4
E52744
CNY17
dopthCNY17-3
lc dash 2 b-5
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Untitled
Abstract: No abstract text available
Text: WS27C256F PRELIMINARY MILITARY 32K x 8 CMOS EPROM • KEY FEATURES * EPI Processing Fast Access Time — 90 ns Over Full Mil Temp Range — Latch-up Immunity Up to 200 mA • Low Power Consumption • DESC SMD No. 5962-86063 — ESD Protection Exceeds 2000V
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WS27C256F
WS27C256F
WS27C256F-90CMB
WS27C256F-90DMB
WS27C256F-90LMB
MIL-STD-883C
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Untitled
Abstract: No abstract text available
Text: IÆ -S -S = WS57C64F HIGH SPEED 8K x 8 CMOS EPROM KEY FEATURES • Fast Access Time • EPI Processing — 55 ns — Latch-Up Immunity Up to 200 mA • Low Power Consumption • DESC SMD No. 85102 * Standard EPROM Pinout GENERAL DESCRIPTION The WS57C64F is an extrem ely HIGH PERFORMANCE 64K UV Erasable Electrically Programmable Read O nly
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WS57C64F
WS57C64F
WS57C64Fare
WS57C64F-55D
WS57C64F-70CMB
WS57C64F-70D
WS57C64F-70DI
WS57C64F-70DMB
WS57C64F-70J
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Untitled
Abstract: No abstract text available
Text: WS27C128F MILITARY 16K x 8 CMOS EPROM KEY FEATURES • Fast Access Time • EPI Processing — 90 ns Over Full Mil Temp Range — Latch-Up Immunity Up to 200 mA • Low Power Consumption • Standard EPROM Pinout • DESC SMD No. 5962-87661 • Military Operating Range
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WS27C128F
WS27C128F
WS27C128F-90CMB
WS27C128F-90DM
28-Pin
MIL-STD-883C
WS27C128F-90DMB
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Untitled
Abstract: No abstract text available
Text: WS57C128F HIGH SPEED 16Kx 8 CMOS EPROM K E Y FEATURES • Fast Access Time • EPi Processing — 55 ns — Latch-up Immunity Up to 200 mA • Low Power Consumption • DESC SMD No. 5962-87661 • Standard EPROM Pinout GENERAL D ESCRIPTION The WS57C128F is a High Performance 128K UV Erasable Electrically Programmable Read Only Memory. It is
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WS57C128F
WS57C128F
MIL-STD-883C
28-Pin
WS57C128F-55D
WS57C128F-70CMB
WS57C128F-70D
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pin diagram of ic 27128
Abstract: SMD Capacitor symbols
Text: WS27C128F MILITARY 16Kx 8 CMOS EPROM FOR M AIN T E N A N C E PU R PO SES ONLY! N O T TO BE USED FOR N E W DESIGNS. SEE WS57C128FB FOR N E W DESIGNS! • KEY FEATURES • EPI Processing Fast Access Time — 90 ns Over Full Mil Temp Range — Latch-Up Immunity Up to 200 mA
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WS27C128F
WS57C128FB
WS27C128F
MIL-STD-883C
WS27C128F-90DM
WS27C128F-90DMB*
pin diagram of ic 27128
SMD Capacitor symbols
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Untitled
Abstract: No abstract text available
Text: THYRISTOR MODULE AK90QB40/80 U L ;E 76 1 0 2 M Power Thyristor Module AK90GB series are designed for various rectifier circuits and power controls. For your circuit application, following internal connections and wide voltage ratings up to 800 V are available, and electrically isolated mounting base make your
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AK90QB40/80
AK90GB
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MK68901
Abstract: No abstract text available
Text: £ ÿ j S C S -T H O M S O N l» ò & IO T iO (g S M K 6 8 9 0 1 MULTI-FUNCTION PERIPHERAL • 8 INPUT/OUTPUT PINS . Individually programmable direction • Individual interrupt source capability . Programmable edge selection ■ 16 SOURCE INTERRUPT CONTROLLER
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Untitled
Abstract: No abstract text available
Text: WS57C256F HIGH SPEED 32K x 8 CMOS EPROM KEY FEATURES • Fast Access Time • EPI Processing — 35 ns — Latch-up Immunity Up to 200 mA • Low Power Consumption • DESC SMD No. 5962-86063 • Standard EPROM Pinout GENERAL DESCRIPTION The WS57C256F is a High Performance 256K UV Erasable Electrically Programmable Read Only Memory. It is
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WS57C256F
WS57C256F
WS57C256F-70CMB
MIL-STD-883C
WS57C256F-70D
WS57C256F-70DM
WS57C256F-70DMB
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MK3801
Abstract: MK68901 TC2623 mk380 D61211 IN4447
Text: SGS-THOMSON □ œ ô m i O T « S M K 6 8 9 0 1 MULTI-FUNCTION PERIPHERAL • 8 INPUT/OUTPUT PINS ■ Individually programmable direction • Individual interrupt source capability _ Programmable edge selection ■ 16 SOURCE INTERRUPT CONTROLLER • 8 Internal '-^urces
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MK68901
MK68901
MK3801
TC2623
mk380
D61211
IN4447
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am29f010
Abstract: AM29F010 die AM29F010 known good am29f010-90 98108A known good die AMD CS19AFDS amd 29F010 flash memory M29F010 IC 2 5/NAND KGD
Text: Am29F010 Known Good Die AM DC! 1 Megabit 128 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS Embedded Algorithms • Single power supply operation — Embedded Erase algorithm automatically pre-programs and erases the chip or any
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Am29F010
AM29F010 die
AM29F010 known good
am29f010-90
98108A
known good die AMD
CS19AFDS
amd 29F010 flash memory
M29F010
IC 2 5/NAND KGD
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Untitled
Abstract: No abstract text available
Text: <S>2iLas CUSTOMERPROCUREMENISPECIFICATION Z86E66 CM OS Z8 OTP M icrocontroller FEATURES ROM Kbytes RAM Kbytes I/O Package Information n Part V ectored, P rioritized Interrupts w ith Program m able Polarity Z 86E 66 16 236 32 44-Pin QFP n Tw o C om parators
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44-Pin
Z86E66
G3555b
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specifications of ic 1408
Abstract: F7301 AE 76 2ace S23128 S36128 S3620 AOD3 1E68 082E
Text: A M I I. A S ubsidiary o f G ould Inc. S36128 131,072 BIT NMOS FEMALE SPEECH ROM Features speech data. □ Approxim ately 100 Seconds of Stored Speech The S36128 speech ROM is fully TTL com patible on all inputs and outputs and ha sasin gle + 5V power supply.
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S36128
S3620
LPC-10
S36128
200ms
100ms
specifications of ic 1408
F7301
AE 76
2ace
S23128
AOD3
1E68
082E
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AM29F400 known good
Abstract: U 17229 am29f400 die AM29F400B
Text: Am29F400B Known Good Die AMDZ1 4 Megabit 512 K X 8-BR/256 K X 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS Single power supply operation — 5.0 volt-only operation for read, erase, and program operations
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Am29F400B
Am29F400
AM29F400 known good
U 17229
am29f400 die
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S4M1
Abstract: EPROM 2764a 2764A-20 DIP-28 ST2764AP Z8000 ST2764A-20CP ST2764A
Text: “ JÆ. SGS-THOMSON ST2764AP ISOÊIB lllLI ffWHOëi 64K 8K x 8 NMOS ONE TIME PROGRAMMABLE ROM • FAST ACCESS TIME: 180ns ■ O to + 7 0 °C STANDARD TEMPERATURE RANGE ■ SINGLE + 5 V POWER SUPPLY ■ ± 1 0 % VCc TOLERANCE AVAILABLE ■ LOW STANDBY CURRENT (35mA MAX)
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ST2764AP
180ns
DIP-28
ST2764AP
536-bit
200ns,
ST2764A-18XCP
ST2764A-20XCP
S4M1
EPROM 2764a
2764A-20
DIP-28
Z8000
ST2764A-20CP
ST2764A
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CS19AFDS
Abstract: No abstract text available
Text: SU PPLEM ENT Am29F100 Known Good Die 1 Megabit 128 K x 8-Bit/64 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations
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Am29F100
8-Bit/64
16-Bit)
CS19AFDS
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mk3801
Abstract: 2242A U4342
Text: S G S -T H O M S O N D S œ U ILIO raûlK inei T S 6 8 H C 901 HCMOS MULTI-FUNCTION PERIPHERAL The TS68HC901 CMFP CMOS Multi-Function Peripheral is a combination of many of the neces sary peripheral functions in a microprocessor sys tem. Included a re :
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TS68HC901
mk3801
2242A
U4342
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Untitled
Abstract: No abstract text available
Text: Preliminary COM’L Cl PAL24R10-10 Series Advanced Micro Devices 10 ns 28-pin TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS Power-up reset for initialization • 10 ns maximum propagation delay ■ f MA x ■ 8 ns maximum from clock input to data output
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PAL24R10-10
28-pin
24L10,
24R10,
PAL24R10-10
PAL24L10-10,
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Untitled
Abstract: No abstract text available
Text: □PM Dense-Pac Microsystems. Inc. <T DPV32X16A 32K X 16 UVEPROM PGA MODULE O PRELIM IN ARY DESCRIPTION: The DPV32X16A is a 40-pin Pin G rid Array PGA consisting o f tw o 32K X 8 UVEPROM devices in ceram ic LCC packages surface m ounted on a co-fired ceram ic substrate w ith m atched thermal coefficients.
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DPV32X16A
DPV32X16A
40-pin
200ns
250ns
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CS19AFDS
Abstract: No abstract text available
Text: SUPPLEMENT Am29F100 Known Good Die AMDH 1 Megabit 128 K x 8-Bit/64 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory—Die Revision 1 DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V ± 10% for read, erase, and program operations
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Am29F100
8-Bit/64
16-Bit)
CS19AFDS
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