STripFET
Abstract: STD85N3LH5 STD60N3LH5 STD70N2LH5 STD95N2LH5 STL150N3LLH5 STL65N3LLH5 STS14N3LLH5 STU60N3LH5 STU70N2LH5
Text: STripFETTM V The latest DC-DC converters - more power per cubic inch STMicroelectronics’ latest proprietary STripFET technology delivers extremely low conduction and switching losses and achieves the lowest figure of merit FOM among comparable devices.
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FLSTRIP0308
STripFET
STD85N3LH5
STD60N3LH5
STD70N2LH5
STD95N2LH5
STL150N3LLH5
STL65N3LLH5
STS14N3LLH5
STU60N3LH5
STU70N2LH5
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71933
Abstract: Mohan si4886 Si4420 siliconix Mohan power electronics converters applications a MOSFET SO-8 Si4420 siliconix datasheet SI4442 AN605 Si4420
Text: AN605 Vishay Siliconix Power MOSFET Basics: Understanding MOSFET Characteristics Associated With The Figure of Merit Jess Brown, Guy Moxey INTRODUCTION There are several factors which affect the gate of the MOSFET, and it is necessary to understand the fundamental
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AN605
08-Sep-03
71933
Mohan
si4886
Si4420 siliconix
Mohan power electronics converters applications a
MOSFET SO-8
Si4420 siliconix datasheet
SI4442
AN605
Si4420
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PB3A003P200
Abstract: PB3A003P202 Denki SPH-002GW-P0 PB3A003P201 PB3A003R200 230V circuit breaker PBM565 PBM604FXE20 stepping motor japan servo
Text: CLOSED LOOP STEPPING SYSTEMS Model No.PB Ver. 3 English Hybrid system combining the ease-of-use of stepping motors with the reliability of servomotors. CLOSED LOOP STEPPING SYSTEMS MERIT Model No.PB Increased System Speed and Smaller System Size 1 High Speed Positioning
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4-03A/04
PB3A003P200
PB3A003P202
Denki
SPH-002GW-P0
PB3A003P201
PB3A003R200
230V circuit breaker
PBM565
PBM604FXE20
stepping motor japan servo
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capacitor k1k
Abstract: No abstract text available
Text: TSV521, TSV522, TSV524, TSV521A, TSV522A, TSV524A High merit factor 1.15 MHz for 45 A CMOS op amps Datasheet - production data Related products • See TSV631, TSV632, TSV634 series for lower minimum supply voltage (1.5 V) • See LMV821, LMV822, LMV824 series for
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TSV521,
TSV522,
TSV524,
TSV521A,
TSV522A,
TSV524A
TSV631,
TSV632,
TSV634
LMV821,
capacitor k1k
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IRF7807 equivalent
Abstract: MS-012AA IRF7805 IRF7807 F7101 IRF7101
Text: PD 91746 / 91747 IRF7805/IRF7807 PRELIMINARY HEXFET Chip-Set for DC-DC Converters • N Channel Application Specific MOSFETs • Ideal solution for mobile processor DC-DC Converters • Low Conduction Losses • Low Switching Losses • Low Figure of Merit
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IRF7805/IRF7807
IRF7805/IRF7807
IRF7807
IRF7807 equivalent
MS-012AA
IRF7805
F7101
IRF7101
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51 ohm resistor
Abstract: No abstract text available
Text: HMC839LP6CE v02.1010 FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO 1050 - 1205, 2100 - 2410, 4200 - 4820 MHz Features • RF Bandwidth: 1050 - 1205, 2100 - 2410, 4200 - 4820 MHz • Ultra Low Phase Noise -112 dBc/Hz in Band Typ. • Figure of Merit FOM -227 dBc/Hz
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HMC839LP6CE
24-bit
HMC839LP6CE
HMC860LP3E
51 ohm resistor
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Untitled
Abstract: No abstract text available
Text: SiHG28N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg
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SiHG28N60EF
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • Halogen-free According to IEC 61249-2-21 Definition • High EAR Capability • Lower Figure-of-Merit Ron x Qg • 100 % Avalanche Tested
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SiHG22N60S
O-247AC
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: HMC839LP6CE v001.0410 FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO 1050 - 1205, 2100 - 2410, 4200 - 4820 MHz Features • RF Bandwidth: 1050 - 1205, 2100 - 2410, 4200 - 4820 MHz • Ultra Low Phase Noise -112 dBc/Hz in Band Typ. • Figure of Merit FOM -227 dBc/Hz
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HMC839LP6CE
24-bit
HMC839LP6CE
HMC860LP3E
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HMC839
Abstract: HMC839LP6CE HMC860LP3 100MHz VCO schematic HMC860LP3E PLL 2400 MHZ MA 4820
Text: HMC839LP6CE v02.1010 FRACTIONAL-N SYNTHESIZER WITH INTEGRATED VCO 1050 - 1205, 2100 - 2410, 4200 - 4820 MHz Features • RF Bandwidth: 1050 - 1205, 2100 - 2410, 4200 - 4820 MHz • Ultra Low Phase Noise -112 dBc/Hz in Band Typ. • Figure of Merit FOM -227 dBc/Hz
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HMC839LP6CE
24-bit
HMC839LP6CE
HMC860LP3E
HMC839
HMC860LP3
100MHz VCO schematic
HMC860LP3E
PLL 2400 MHZ
MA 4820
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Untitled
Abstract: No abstract text available
Text: SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation One • Halogen-free According to IEC 61249-2-21 Definition • High EAR Capability • Lower Figure-of-Merit Ron x Qg • 100 % Avalanche Tested
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SiHG22N60S
O-247AC
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SiHP21N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg
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SiHP21N60EF
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHG70N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg
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SiHG70N60EF
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved
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SiHP16N50C
SiHB16N50C
SiHF16N50C
O-220AB
O-220
2002/95/EC
O-263)
SiHP16N50C-E3
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Untitled
Abstract: No abstract text available
Text: SiHF28N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg
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SiHF28N60EF
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHG21N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg
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SiHG21N60EF
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHB33N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg
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SiHB33N60EF
O-263)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SIHP33N60EF-GE3
Abstract: No abstract text available
Text: SiHP33N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg
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SiHP33N60EF
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SIHP33N60EF-GE3
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Untitled
Abstract: No abstract text available
Text: SiHG33N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg
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SiHG33N60EF
O-247AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses
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SiHG22N60E
2002/95/EC
O-247AC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SiHG30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss) • Reduced Switching and Conduction Losses
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SiHG30N60E
2002/95/EC
O-247AC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved
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SiHP16N50C
SiHB16N50C
SiHF16N50C
O-220AB
O-220
2002/95/EC
O-263)
SiHP16N50C-E3
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mvam108
Abstract: C8546A
Text: I nternational C8546A thru C8546D S em ico nducto r , I nc . SILICON TUNING DIODES TUNING DIODES WITH VERY HIGH CAPACITANCE RATIO • High Capacitance Ratio CR= 15 Min for MVAM108, 115, 125 ■ Guaranteed Diode Capacitance ■ Guaranteed Figure of Merit t°
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OCR Scan
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C8546A
C8546D
MVAM108,
8546B
8546D
C8546A
C8546B
C8546C
mvam108
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DEVICE MARKING CODE 41
Abstract: sot markings sot23 markings marking code T1 Code sot-23 on semiconductor marking CODE box SOT23 marking 41 sot23
Text: Section 4 Small-Signal Field-Effect Transistors and MOSFETs In Brief. . . The data sheets on the following pages are designed to emphasize those FETs that by virtue of widespread industry use, ease of manufacture, and low relative cost, merit first consideration for new equipment design.
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OT-23
DEVICE MARKING CODE 41
sot markings
sot23 markings
marking code T1
Code sot-23 on semiconductor
marking CODE box SOT23
marking 41 sot23
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