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    MEMORY DEVICE SENSE AMPLIFIER Search Results

    MEMORY DEVICE SENSE AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    MEMORY DEVICE SENSE AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FBGA-60

    Abstract: FBGA60 fbga60 package
    Text: New Products MBM29BS64LF 64M-bit x16 Burst Mode Flash Memory MBM29BS64LF FUJITSU has developed a new burst mode flash memory device operating with a 1.8 V single power supply. This device incorporates an original FUJITSU sense system that reduces the current consumption (mean value in the standby mode)


    Original     		PDF MBM29BS64LF 64M-bit 64M-bit fMBM29BSxxx 128M-bit MBM29BS64LF, FBGA-60 FBGA60 fbga60 package

    SN75107

    Abstract: SN55109A
    Text: SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C – JULY 1973 – REVISED MARCH 1997 D D D D D D D D D D D Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics ± 10-mV Input Sensitivity


    Original     		PDF SN75207B SLLS096C SN75107A SN75107B 10-mV SN7520 SN75207BD SN75207BN SN75207BNSR SN75107 SN55109A

    CoolRunner

    Abstract: memory device sense amplifier
    Text: Fast Zero Power Traditional CPLDs • CPLDs migrated from Bipolar to CMOS – Easier platform to design upon – Lower power consumption – Continued to use the same Bipolar design technique to implement Product Terms • Product Term Construction Sense Amplifier


    Original     		PDF 100mV CoolRunner memory device sense amplifier

    K4004

    Abstract: SN75361* equivalent SN75361A SN75107 SN55109A
    Text: SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C – JULY 1973 – REVISED MARCH 1997 D D D D D D D D D D D Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics ± 10-mV Input Sensitivity


    Original     		PDF SN75207B SLLS096C SN75107A SN75107B 10-mV SN7520S SLYT012A SLYT010A SLLA067 K4004 SN75361* equivalent SN75361A SN75107 SN55109A

    X9470

    Abstract: X9470V24I
    Text: X9470 Data Sheet PRELIMINARY March 8, 2005 FN8204.0 RF Power Amplifier PA Bias Controller DESCRIPTION FEATURES The Intersil X9470 RF PA Bias Controller contains all of the necessary analog components to sense the PA drain current through an external sense resistor and


    Original     		PDF X9470 FN8204 X9470 X9470V24I

    base station receiver GSM

    Abstract: adaptive analog filter potentiometer potentiometer, 10 k, 10 turn potentiometer RESISTOR POTENTIOMETER X9470 X9470V24I
    Text: X9470 IGNS E W DES N R O F N DED EM ENT COMME RE PL AC D E N OT R E D N E enter at MM Data Sheet PRELIMINARY port C p u S O R E CO l N a m/tsc nic our Tech r www.intersil.co t c ta n o c o TERSIL 1-888-IN March 8, 2005 FN8204.0 RF Power Amplifier PA Bias Controller


    Original     		PDF X9470 FN8204 X9470 base station receiver GSM adaptive analog filter potentiometer potentiometer, 10 k, 10 turn potentiometer RESISTOR POTENTIOMETER X9470V24I

    SN55109A

    Abstract: 1N916 207B SN55110A SN75107A SN75107B SN75207B SN75361A SN75452B
    Text: SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C – JULY 1973 – REVISED MARCH 1997 D D D D D D D D D D D Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics ± 10-mV Input Sensitivity


    Original     		PDF SN75207B SLLS096C SN75107A SN75107B 10-mV SN75207B SN55109A 1N916 207B SN55110A SN75361A SN75452B

    SN55109A

    Abstract: SN75361A 1N916 207B SN55110A SN75107A SN75107B SN75207B SN75452B SN75107
    Text: SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C – JULY 1973 – REVISED MARCH 1997 D D D D D D D D D D D Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics ± 10-mV Input Sensitivity


    Original     		PDF SN75207B SLLS096C SN75107A SN75107B 10-mV SN75207B SN55109A SN75361A 1N916 207B SN55110A SN75452B SN75107

    SN75361A

    Abstract: SN55109A SN55110A SN75107A SN75107B SN75207B SN75452B 1N916 207B
    Text: SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C – JULY 1973 – REVISED MARCH 1997 D D D D D D D D D D D Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics ± 10-mV Input Sensitivity


    Original     		PDF SN75207B SLLS096C SN75107A SN75107B 10-mV SN75207B SN75361A SN55109A SN55110A SN75452B 1N916 207B

    SN55109A

    Abstract: 1N916 207B SN55110A SN75107A SN75107B SN75207B SN75361A SN75452B
    Text: SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C – JULY 1973 – REVISED MARCH 1997 D D D D D D D D D D D Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics ± 10-mV Input Sensitivity


    Original     		PDF SN75207B SLLS096C SN75107A SN75107B 10-mV SN75207B SN55109A 1N916 207B SN55110A SN75361A SN75452B

    MC3430

    Abstract: DS1651J DS3651 DS3651J DS3651N J16A N16A 2DS1651
    Text: DS1651/DS3651 Quad High Speed MOS Sense Amplifiers General Description Features The DS1651/DS3651 is TTL compatible high speed circuits intended for sensing in a broad range of MOS memory system applications. Switching speeds have been enhanced over conventional sense amplifiers by application of Schottky technology, and TRI-STATE strobing is incorporated, offering a high impedance output state for bused organization.


    Original     		PDF DS1651/DS3651 DS1651/DS3651 MC3430 DS1651J DS3651 DS3651J DS3651N J16A N16A 2DS1651

    SN75107

    Abstract: SN55109A
    Text: SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C – JULY 1973 – REVISED MARCH 1997 D D D D D D D D D D D Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics ± 10-mV Input Sensitivity


    Original     		PDF SN75207B SLLS096C SN75107A SN75107B 10-mV SN7520 SN75107 SN55109A

    SN55109A

    Abstract: 1N916 207B SN75107A SN75107B SN75207 SN75207B SN75361A SN75452B SN75361
    Text: SN75207, SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096B – JULY 1973 – REVISED MAY 1995 • • • • • • • • • • • Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics


    Original     		PDF SN75207, SN75207B SLLS096B SN75107A SN75107B 10-mV SN75207B SN55109A 1N916 207B SN75207 SN75361A SN75452B SN75361

    SN55109A

    Abstract: 1N916 207B SN75107A SN75107B SN75207 SN75207B SN75361A SN75452B SN75107
    Text: SN75207, SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096B – JULY 1973 – REVISED MAY 1995 • • • • • • • • • • • Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics


    Original     		PDF SN75207, SN75207B SLLS096B SN75107A SN75107B 10-mV SN75207B SN55109A 1N916 207B SN75207 SN75361A SN75452B SN75107

    SN75361

    Abstract: SN75361A SN55109A 1N916 207B SN75107A SN75107B SN75207 SN75207B SN75452B
    Text: SN75207, SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096B – JULY 1973 – REVISED MAY 1995 • • • • • • • • • • • Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics


    Original     		PDF SN75207, SN75207B SLLS096B SN75107A SN75107B 10-mV SN75207B SN75361 SN75361A SN55109A 1N916 207B SN75207 SN75452B

    2DS1651

    Abstract: C1995 DS1651 DS1651J DS3651 DS3651J DS3651N J16A MC3430 N16A
    Text: DS1651 DS3651 Quad High Speed MOS Sense Amplifiers General Description Features The DS1651 DS3651 is TTL compatible high speed circuits intended for sensing in a broad range of MOS memory system applications Switching speeds have been enhanced over conventional sense amplifiers by application of


    Original     		PDF DS1651 DS3651 DS3651 2DS1651 C1995 DS1651J DS3651J DS3651N J16A MC3430 N16A

    K4004

    Abstract: SN75107 SN55109A
    Text: SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C – JULY 1973 – REVISED MARCH 1997 D D D D D D D D D D D Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics ± 10-mV Input Sensitivity


    Original     		PDF SN75207B SLLS096C SN75107A SN75107B 10-mV SN7520struments K4004 SN75107 SN55109A

    SN55109A

    Abstract: No abstract text available
    Text: SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C – JULY 1973 – REVISED MARCH 1997 D D D D D D D D D D D Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics ± 10-mV Input Sensitivity


    Original     		PDF SN75207B SLLS096C SN75107A SN75107B 10-mV SN7520 SN55109A

    X9470

    Abstract: X9470V24I
    Text: Preliminary Information RF Power Amplifier PA Bias Controller X9470 DESCRIPTION • Programmable Bias Controller IC for Class A and AB LDMOS Power Amplifiers • Adaptive System on Chip Solution • Bias Current Calibration to better than ±4% using Reference Trim DCP


    Original     		PDF X9470 X9470 X9470V24I

    Untitled

    Abstract: No abstract text available
    Text: RF Power Amplifier PA Bias Controller X9470 FEATURES DESCRIPTION • Programmable Bias Controller IC for Class A and AB LDMOS Power Amplifiers • Adaptive System on Chip Solution • Bias Current Calibration to better than ±4% using Reference Trim DCP


    Original     		PDF 24-pin

    direct rdram rambus

    Abstract: RDRAM Clock rambus channel fujitsu rdram
    Text: September 1992 Edition 1.1 fujÍtsu DATA SHEET MB814953 4.5 MBIT RDRAM W DESCRIPTION The MB814953 is a new generation ultra high speed CMOS Rambus™ DRAM organized as 512KX9. The MB814953 uses advanced circuit design techniques with standard CMOS process technology. It utilizes the 18,432 sense amplifiers as a


    OCR Scan     		PDF MB814953 512KX9. MB814953-P KV0005-929K1 direct rdram rambus RDRAM Clock rambus channel fujitsu rdram

    Untitled

    Abstract: No abstract text available
    Text: NATL SEMICOND {MEMORY} IDE D | bS0115b 0Qt,E^3s 1 National Semiconductor I -7C. 7 3 - 5 - / Q c/> CO o> Ol DS1651/DS3651 Quad High Speed MOS Sense Amplifiers General Description Features The DS1651 /DS3651 is TTL compatible high speed circuits intended for sensing in a broad range of MOS memory sys­


    OCR Scan     		PDF bS0115b DS1651/DS3651 DS1651 /DS3651 0S1651/0S3651

    G37 IC

    Abstract: SN55109A
    Text: SN75207B DUAL SENSE AMPLIFIER FOR MOS MEMORIES OR DUAL HIGH-SENSITIVITY LINE RECEIVERS SLLS096C - JULY 1973 - REVISED MARCH 1997 Plug-In Replacement for SN75107A and SN75107B With Improved Characteristics N PACKAGE TOP VIEW ±10-mV Input Sensitivity 1A[ 1


    OCR Scan     		PDF SN75207B SLLS096C SN75107A SN75107B 10-mV i02fl G37 IC SN55109A

    intel 8055

    Abstract: BPK70 intel 7242
    Text: in te i 7242 DUAL FORMATTER/SENSE AMPLIFIER FOR BUBBLE MEMORIES FIFO Data Block Buffer Error Detection/Correction Done Automatically Dual Channel Daisy-Chained Selects for Multiple Bubble Memory Systems On-Chip Sense Amplifiers MOS N-Channel Technology Automatically Handles Redundant


    OCR Scan     		PDF 20-Pin tcYC-11 AFN-01358A AFN-01358A intel 8055 BPK70 intel 7242