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    MEMORY CONTROLLER Search Results

    MEMORY CONTROLLER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K819R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K809R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K504NU Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 30 V, 9.0 A, 0.0195 Ohm@10V, UDFN6B, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    MEMORY CONTROLLER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    samsung date code decorder

    Abstract: SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp
    Text: KBA0101A0M / KBA0201A0M KBA0301A0M / KBA0401A0M Preliminary MCP MEMORY Document Title Multi-Chip Package MEMORY 64M Bit 4Mx16 Four Bank NOR Flash Memory *2 / 32M Bit (2Mx16) UtRAM / 8M Bit (512Kx16) SRAM Revision History Revision No. History Draft Date Remark


    Original     		PDF KBA0101A0M KBA0201A0M KBA0301A0M KBA0401A0M 4Mx16) 2Mx16) 512Kx16) LIM-011025 samsung date code decorder SAMSUNG MCP transistor sr61 transistor BA29 BA102 BA127 Diode MITSUBISHI SR-40 UtRAM Density samsung NAND memory nand sdram mcp

    SAMSUNG MCp

    Abstract: samsung NAND FLASH BGA SAMSUNG 128Mb NAND Flash Qualification Reliability
    Text: Preliminary MCP MEMORY K5P5781FCM Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash Memory / 8M Bit (512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft. April 18, 2003 Preliminary 0.1 Revised


    Original     		PDF K5P5781FCM 16Mx16) 512Kx16) 100pF 10nsCC 69-Ball SAMSUNG MCp samsung NAND FLASH BGA SAMSUNG 128Mb NAND Flash Qualification Reliability

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11429-1E MEMORY Mobile FCRAMTM CMOS 32 M Bit 2 M wordx16 bit Mobile Phone Application Specific Memory MB82DBS02163C-70L • DESCRIPTION The FUJITSU MB82DBS02163C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous


    Original     		PDF DS05-11429-1E MB82DBS02163C-70L MB82DBS02163C 16-bit F0508

    Samsung EOL

    Abstract: IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E
    Text: Industrial Grade Memory Products Selecting the Right ISSI Industrial Grade Memory Fastest Random Access Access <20ns 288-576Mb Memory No DRC* Lower cost/bit 18-72Mb RLDRAM 10-20ns Easy Interface, Low Power Higher Density Ultra Low Power Synch SRAM <5ns Asynch SRAM


    Original     		PDF 288-576Mb 10-20ns 18-72Mb 64Kb-16Mb 8Mb-64Mb 16Mb-512Mb 16Mb-1Gb 256Mb-2Gb 200Mhz -40oC Samsung EOL IS42S81600F is42s16320 IS43DR16320 IS42S32200L IS49NLC36800 IS43R32400E IS46R Mobile SDRAM IS42S32200E

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11463-2E MEMORY Consumer FCRAMTM CMOS 512M Bit 4 bank x 2M word x 64 bit Consumer Applications Specific Memory for SiP MB81EDS516545 • DESCRIPTION The Fujitsu MB81EDS516545 is a CMOS Fast Cycle Random Access Memory (FCRAM*) with Low Power Double


    Original     		PDF DS05-11463-2E MB81EDS516545 MB81EDS516545 64-bit

    DS1991

    Abstract: DS1991L-F5 DS9092 DS9093F DS9093RA DS9096P DS9101
    Text: DS1991 MultiKey iButtonTM www.dalsemi.com SPECIAL FEATURES § § § § § § § § 1,152-bit secure read/write, nonvolatile memory Secure memory cannot be deciphered without matching 64-bit password Memory is partitioned into 3 blocks of 384 bits each 64-bit password and ID fields for each


    Original     		PDF DS1991 152-bit 64-bit 512-bit DS1991 DS1991L-F5 DS9092 DS9093F DS9093RA DS9096P DS9101

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2.0E MEMORY Mobile FCRAMTM CMOS 16 Mbit 1 M word x 16 bit Mobile Phone Application Specific Memory CMOS 1,048,576-WORD × 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface


    Original     		PDF /-80L/-80LL/-85/-85L/-85LL/-90/-90L/-90LL 576-WORD MB82D01171A 16-bit -30oC

    da53

    Abstract: HYB25M288180C-653 HYB25M288180C-745 HYB25M288180C-840 HYB25M288180C-845 HYB25R288180C-653 HYB25R288180C-745 HYB25R288180C-840 HYB25R288180C-845
    Text: Direct RDRAM 288-Mbit 512kx18x32s Perliminary Datasheet Overview The INFINEON Direct RDRAM is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other


    Original     		PDF 288-Mbit 512kx18x32s) 288-Mbit da53 HYB25M288180C-653 HYB25M288180C-745 HYB25M288180C-840 HYB25M288180C-845 HYB25R288180C-653 HYB25R288180C-745 HYB25R288180C-840 HYB25R288180C-845

    MCP 67 MV- A2

    Abstract: SAMSUNG MCp samsung "nor flash" sensing nand mcp samsung ka SAMSUNG mcp Reliability spec Product Selection Guide samsung 2013 MCP NAND, DRAM, NOR SAMSUNG 256Mb mcp Qualification Reliability 14CLK UtRAM Density
    Text: KAA00B209M-TGxx MCP MEMORY Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash/32M Bit(2Mx16) UtRAM/128M Bit(2Mx16x4Banks) MobileSDRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. January 15, 2002 Advance 0.1


    Original     		PDF KAA00B209M-TGxx 16Mx16) Flash/32M 2Mx16) UtRAM/128M 2Mx16x4Banks) 127-Ball 80x12 08MAX MCP 67 MV- A2 SAMSUNG MCp samsung "nor flash" sensing nand mcp samsung ka SAMSUNG mcp Reliability spec Product Selection Guide samsung 2013 MCP NAND, DRAM, NOR SAMSUNG 256Mb mcp Qualification Reliability 14CLK UtRAM Density

    74LS45

    Abstract: No abstract text available
    Text: Chapter 1 Overview This manual describes the DSP56301 24-bit digital signal processor DSP , its memory, operating modes, and peripheral modules. The DSP56301 is an implementation of the DSP56300 core with a unique configuration of on-chip memory, cache, and peripherals.


    Original     		PDF DSP56301 24-bit DSP56300 DSP56300FM/AD) DSP56301/D DSP56301. 74LS45

    003FE

    Abstract: 9l reset CY7C0831V CY7C0832V CY7C0851V CY7C0852V KRE 101 2003
    Text: CY7C0851V/CY7C0852V CY7C0831V/CY7C0832V 3.3V 64K/128K x 36 and 128K/256K x 18 Synchronous Dual-Port RAM Features Functional Description • True dual-ported memory cells that allow simultaneous access of the same memory location • Synchronous pipelined operation


    Original     		PDF CY7C0851V/CY7C0852V CY7C0831V/CY7C0832V 64K/128K 128K/256K CY7C0852V) CY7C0851V) CY7C0832V) CY7C0831V) 167-MHz 18-micron 003FE 9l reset CY7C0831V CY7C0832V CY7C0851V CY7C0852V KRE 101 2003

    SAMSUNG MCP

    Abstract: KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm
    Text: Preliminary MCP MEMORY KAA00BB07M-DGUV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM / 256M Bit (4Mx16x4Banks) Mobile SDRAM Revision History Revision No. History 0.0 Draft Date Initial draft - 256Mb NAND C-Die_Ver 2.6


    Original     		PDF KAA00BB07M-DGUV 16Mx16) 4Mx16) 4Mx16x4Banks) 256Mb 137-Ball 80x14 SAMSUNG MCP KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm

    Untitled

    Abstract: No abstract text available
    Text: TM59PE40 8 Bit Microcontroller Data Sheet FEATURES 1. Memory ‧ 208-byte general purpose register include LCD-Buffer RAM ‧ 4Kx14 internal program memory (OTP ROM) 2. Oscillation Sources ‧ Crystal, Ceramic, SUB Clock ‧ CPU clock divider (/1, /4, /8, /16)


    Original     		PDF TM59PE40 208-byte 4Kx14 16-bit DS-TM59PE40 TM59PE40 64-QFP 64-QFP

    Untitled

    Abstract: No abstract text available
    Text: S34ML08G2 NAND Flash Memory for Embedded 8 Gb, 4-bit ECC, x8 I/O and 3V VCC Data Sheet Advance Information S34ML08G2 NAND Flash Memory for Embedded Cover Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S34ML08G2 S34ML08G2

    adwill

    Abstract: D176 Atmel part numbering ata5577 coil gold detector circuit diagram atmel rfid reader lf D-176 125KHz LF coil antenna for Automotive 125khz rfid reader analog lot id
    Text: Atmel ATA5575M1 Read/Write LF RFID IDIC 100kHz to 150kHz DATASHEET Features ● Contactless power supply ● Contactless read/write data transmission ● Radio frequency fRF from 100kHz to 150kHz ● 128-bit EEPROM user memory: 16Bytes 8Bits each ● 8-bit configuration memory


    Original     		PDF ATA5575M1 100kHz 150kHz 128-bit 16Bytes RF/64) 40-bit 15-bit adwill D176 Atmel part numbering ata5577 coil gold detector circuit diagram atmel rfid reader lf D-176 125KHz LF coil antenna for Automotive 125khz rfid reader analog lot id

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 128K x 8 DUAL-PORT STATIC RAM Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access – Commercial: 15/20ns max. Low-power operation – IDT7009L Active: 1W (typ.)


    Original     		PDF 15/20ns IDT7009L IDT7009 200mV

    communication between cpu and iop

    Abstract: 8089 microprocessor architecture
    Text: ^ S Ü G IM M V M8089 8 & 16-BIT HMOS I/O PROCESSOR Military • High Speed DMA Capabilities Including I/O to Memory, Memory to I/O, Memory to Memory, and I/O to I/O ■ 1 Mbyte Addressability ■ MIAPX 86, 68 Compatible: Removes I/O Overhead from CPU in MiAPX 86/11 or


    OCR Scan     		PDF M8089 16-BIT M88/11 16-Bit M8089 communication between cpu and iop 8089 microprocessor architecture

    Untitled

    Abstract: No abstract text available
    Text: in te l 28F016XD 16-MBIT 1 MBIT X 16 DRAM-INTERFACE FLASH MEMORY Backwards-Compatible with 28F016SA/SV, 28F008SA Command Set 85 ns Access Time (tRAc) Multiplexed Address Bus RAS# and CAS# Control Inputs No-Glue Interface to Many Memory Controllers SmartVoltage Technology


    OCR Scan     		PDF 28F016XD 16-MBIT 28F016SA/SV, 28F008SA 64-Kbyte 28F016SA/28F016SV/28F016XS/28F016XD" AP-384, 28F016XDâ 28F016XD

    Untitled

    Abstract: No abstract text available
    Text: in t e l 28F016XD 16-MBIT 1 MBIT x 16 DRAM-INTERFACE FLASH MEMORY 85 ns Access Time (tRAC) — Supports both Standard and FastPage-Mode Accesses Multiplexed Address Bus — RAS# and CAS# Control Inputs No-Glue Interface to Many Memory Controllers SmartVoltage Technology


    OCR Scan     		PDF 28F016XD 16-MBIT 56-Lead 28F008SA 64-Kbyte 28F016XD 16-Mbit

    Z80SIO

    Abstract: z80 mpu
    Text: T O SH IB A TMPZ84C10A TM PZ84C10AP-6 / TM PZ84C10AM-6 /TMPZ84C10AT-6 CMOS-Z8O DMA : DIRECT MEMORY ACCESS CONTROLLER 1. GENERAL DESCRIPTION AND FEATURES TMPZ84C10A hereinafter referred to as DMA is th e CMOS Z80 DMA (Direct Memory Access Controller) which provides low power consum ing b u t pow erful and


    OCR Scan     		PDF TMPZ84C10A PZ84C10AP-6 PZ84C10AM-6 /TMPZ84C10AT-6 TMPZ84C10A MPUZ80-164 Z80SIO z80 mpu

    Untitled

    Abstract: No abstract text available
    Text: Features ♦ True Dual-Ported memory cells which allow simultaneous access of the same memory location * High-speed access ♦ * * - Industrial 25ns max. - Commercial: 15/20/25/35/55ns (max.) Low-power operation - IDT70261S ♦ ♦ ♦ Active: 750mW(typ.)


    OCR Scan     		PDF 15/20/25/35/55ns IDT70261S 750mW IDT70261L IDT70261S/L IDT70261

    Untitled

    Abstract: No abstract text available
    Text: intei 80960MC EMBEDDED 32-BIT MICROPROCESSOR WITH INTEGRATED FLOATING-POINT UNIT AND MEMORY MANAGEMENT UNIT Military On-Chip Memory Management Unit — 4 Gigabyte Virtual Address Space per Task — 4 Kbyte Pages with Supervisor/User Protection High-Performance Embedded


    OCR Scan     		PDF 80960MC 32-BIT M8259A 80-Bit

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM WITH INTERRUPT Features * True Dual-Ported memory cells which allow simultaneous access of the same memory location * High-speed access * - Industrial 25ns max. - Commercial: 15/20/25/35/55ns (max.) Low-power operation


    OCR Scan     		PDF 15/20/25/35/55ns IDT70261L 750mW IDT70261S IDT70261

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 8 K x 16 DUAL-PORT STATIC RAM IDT70V25S/L F e a tu re s * * True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access - * ♦ Commercial: 25/35/55ns max. ♦ ♦ ♦ Low-power operation - IDT70V25S


    OCR Scan     		PDF IDT70V25S/L 25/35/55ns IDT70V25S 230mW IDT70V25L 660mW IDT70V25