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    MEMORY 6164 Search Results

    MEMORY 6164 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy
    MC28F008-10/B Rochester Electronics LLC EEPROM, Visit Rochester Electronics LLC Buy
    27S03ADM/B Rochester Electronics LLC 27S03A - SRAM Visit Rochester Electronics LLC Buy
    29705/BXA Rochester Electronics LLC 29705 - SRAM Visit Rochester Electronics LLC Buy
    29705APCB Rochester Electronics LLC 29705A - SRAM Visit Rochester Electronics LLC Buy

    MEMORY 6164 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ks57c2316

    Abstract: KS57C21708 KS57P21708 SAM47
    Text: Product Overview Address Spaces Addressing Modes Memory Map SAM47 Instruction Set KS57C21708/P21708 Preliminary Spec 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The KS57C21708 single-chip CMOS microcontroller has been designed for very high performance using


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    PDF SAM47 KS57C21708/P21708 KS57C21708 SAM47 up-to-13-digit 16-bit 64-pin 40-PIN SEG24 ks57c2316 KS57P21708

    ECU microcontroller

    Abstract: ATA6614 mt 6252 sram 62512 62512 sram ATMEGA168PA ATA6614P 62512 RAM 64k x 8 ATA6630 KL15
    Text: General Features • Single-package Fully-integrated AVR 8-bit Microcontroller with LIN Transceiver and • • • • • • 5V Regulator 85mA current capability Very Low Current Consumption in Sleep Mode 32Kbytes Flash Memory for Application Program


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    PDF 32Kbytes QFN48, ATA6614P ATA6630, ECU microcontroller ATA6614 mt 6252 sram 62512 62512 sram ATMEGA168PA 62512 RAM 64k x 8 ATA6630 KL15

    IP175D

    Abstract: IP175 IP175 D IP175 datasheet 7 segment display duplex led type QFP-128L 14880 h60 buffer 93C46 05h12
    Text: IP175 5 Port 10/100 Ethernet Integrated Switch Feature Utilize single clock source only 25Mhz 5 port 10/100 Ethernet switch with built in transceivers Utilize single power (2.5v) and memory 0.25um technology Build in SSRAM for frame buffer Packaged in 128 pin PQFP


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    PDF IP175 25Mhz) IEEE802 IP175 IP175-DS-P05 IP175D IP175 D IP175 datasheet 7 segment display duplex led type QFP-128L 14880 h60 buffer 93C46 05h12

    sandisk micro sd

    Abstract: digital clock using at89s52 microcontroller stepper motor control with avr application notes sandisk micro sd card pin configuration vhdl code for rs232 receiver STK 435 power amplifier Microcontroller AT89S52 vhdl code for ofdm Microcontroller AT89S52 40 pin fingerprint scanner circuit
    Text: Atmel Corporation Atmel Operations Corporate Headquarters 2325 Orchard Parkway San Jose, CA 95131 TEL 1 408 441-0311 FAX 1 (408) 487-2600 Memory 2325 Orchard Parkway San Jose, CA 95131 TEL 1 (408) 441-0311 FAX 1 (408) 436-4314 Regional Headquarters Microcontrollers


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    PDF CH-1705 3271B sandisk micro sd digital clock using at89s52 microcontroller stepper motor control with avr application notes sandisk micro sd card pin configuration vhdl code for rs232 receiver STK 435 power amplifier Microcontroller AT89S52 vhdl code for ofdm Microcontroller AT89S52 40 pin fingerprint scanner circuit

    2114 Ram pinout 18

    Abstract: 9114 RAM 2114 static ram 2114 static ram ic ic 2114 MWS5114E3 9114 static ram MWS5114-3 2114 4 bit Ram pinout 2114 ram
    Text: MWS5114 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in


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    PDF MWS5114 1024-Word MWS5114 2114 Ram pinout 18 9114 RAM 2114 static ram 2114 static ram ic ic 2114 MWS5114E3 9114 static ram MWS5114-3 2114 4 bit Ram pinout 2114 ram

    ATA6614

    Abstract: 62512 RAM 64k x 8 62512 sram sram 62512 sram 62512 512k x 16 62512 RAM MA 6216 IEC 61082 IEC 62391 MT 6253
    Text: General Features • Single-package Fully-integrated AVR 8-bit Microcontroller with LIN Transceiver and • • • • • • 5V Regulator Very Low Current Consumption in Sleep Mode 32Kbytes Flash Memory for Application Program Supply Voltage Up to 40V Operating Voltage: 5V to 27V


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    PDF 32Kbytes QFN48, ATA6614 ATA6630, 62512 RAM 64k x 8 62512 sram sram 62512 sram 62512 512k x 16 62512 RAM MA 6216 IEC 61082 IEC 62391 MT 6253

    Untitled

    Abstract: No abstract text available
    Text: STI648004G1 -60VG 144-PIN SO-DIMMS 8M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC ^RC ^HPC 60ns 15ns 104ns 25ns The Simple Technology STI648004G1-60VG is a 8M x 64 bits Dynamic RAM high density memory module. The Simple


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    PDF STI648004G1 -60VG 144-PIN 104ns STI648004G1-60VG 32-pin 400-mil

    6164 ram memory

    Abstract: intel 6164 ram internal diagram of 7473 pin configuration of intel 80386 Unicorn Microelectronics 6164 memory PA10 PA11 PA12 PA13
    Text: UNICORN MICROE LE CTRON ICS S4E D • ISTÖTÖÖ OOOQÖÖ1 5 ■ UM82C384 Memory Controller I General Description The UM82C384 is one of UMC’s High End AT HEAT Chip Set. It provides memory control functions which facilitate wide ranges of DRAM and CPU speed


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    PDF TE707Ã UM82C384 16MHz, 20MHz 25MHz 120ns T-5S-33 6164 ram memory intel 6164 ram internal diagram of 7473 pin configuration of intel 80386 Unicorn Microelectronics 6164 memory PA10 PA11 PA12 PA13

    BPK72

    Abstract: intel 7110 DMA Controller 8257 isbx-251
    Text: APPLICATION NOTE AP-157 O c to b e r 1983 AP-157 INTRODUCTION^ The 7220-! is a single-chip LSI Bubble Memory Controller BMC that implements a bubble memory storage subsystem (with up to eight bubble storage units (BSUs) per BMC). Each bubble storage unit consists of five support circuits in addition


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    PDF AP-157 BPK72 intel 7110 DMA Controller 8257 isbx-251

    Interfacing of 32k ram and 16K EPROM with 8085

    Abstract: 83ML-5M3B STR F 6168 31 v power STR F 6168 d78p238 interfacing of RAM and ROM with 8085 78234 PD7823 P2511 T2042
    Text: * ^ ^ , NEC Electronics Inc. D e scrip tio n The |xPD78233, jiPD78234, and (jiPD78P238 are high­ performance, 8 -bit, single-chip microcomputers. They contain extended addressing capabilities for up to 1M byte of external memory. The devices also integrate sophisti­


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    PDF uPD7823x xPD78233, jiPD78234, jiPD78P238 PD7823x addr16ifrl* addr16 addr16 Interfacing of 32k ram and 16K EPROM with 8085 83ML-5M3B STR F 6168 31 v power STR F 6168 d78p238 interfacing of RAM and ROM with 8085 78234 PD7823 P2511 T2042

    Untitled

    Abstract: No abstract text available
    Text: ÌMC001FLKA 1-MEGABYTE FLASH MEMORY CARD • Inherent Nonvoiatility Zero Retention Power - No Batteries Required for Back-up ■ Over 1,000,000 Hours MTBF - More Reliable than Disk ■ High-Performance Read - 250 ns Maximum Access Time ■ Command Register Architecture for


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    PDF MC001FLKA 1MC001 MC001FLKA ER-20, RR-60, AP-343,

    58AZ

    Abstract: No abstract text available
    Text: Am29368 Advanced Micro Devices 1 Megabit Dynamic Memory Controller/Driver DMC DISTINCTIVE CHARACTERISTICS Provides control for 16K, 64K, and 256K and 1-megabit dynamic RAMs Outputs directly drive up to 88 DRAMs. with a guaran­ teed worst-case limit on the undershoot


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    PDF Am29368 Am2968A 32-bit QP002600 58AZ

    Am29F080B reverse pinout

    Abstract: SA10-SA11
    Text: AM DH Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology


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    PDF Am29F080B Am29F080 CS39S 20-year Am29F080B reverse pinout SA10-SA11

    altl

    Abstract: No abstract text available
    Text: Advanced CMOS SRAM KM6164000AL/AL-L 256Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. The KM6164000AL/AL-L is a 4,194,304-bit high speed • Low Power Dissipation Static Random Access Memory organized as 262,144


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    PDF KM6164000AL/AL-L 256Kx16 KM6164000AL/AL-L 304-bit 6164000AL/AL-L KM6164he KM6164000ALT/ALT-L: 400mil 0D213G1 altl

    intel 82258

    Abstract: 82258 ulm 2003 logical block diagram of 80286 intel organisational structure 8225Q 80186 CPU subsystem bus controller 8288 intel 82188 CPU-82258
    Text: in t e T 82258 ADVANCED DIRECT MEMORY ACCESS COPROCESSOR ADMA Automatic Data Chaining for Gathering and Scattering of Data Blocks 16 MByte Addressing Range 16 MByte Block Transfer Capability “On the Fly” Compare, Translate and Verify Operations Automatic Assembly/Disassembly of


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    PDF 68-Pin intel 82258 82258 ulm 2003 logical block diagram of 80286 intel organisational structure 8225Q 80186 CPU subsystem bus controller 8288 intel 82188 CPU-82258

    MCM6164

    Abstract: MCM61L64 MCM61L64C55 6164 memory UM 6164 M6164 61L64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6164 MCM61L64 8 K x 8 Bit Fast S tatic Random Access M em o ry The M C M 6164/M CM 61L64 is a 65,536 bit static random access memory organized as 8192 words of 8 bits, fabricated using Motorola's second-generation high-performance silicon-gate CM OS {HCMOS III technology. Static design eliminates the need for external


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    PDF 6164/M 61L64 MCM6164 MCM61L64 6164C 61L64 MCM61L64C45 MCM61L64C55 MCM61L64 MCM61L64C55 6164 memory UM 6164 M6164

    6164 ram memory

    Abstract: No abstract text available
    Text: a Am29368 Advanced Micro Devices 1 Megabit Dynamic Memory Controller/Driver DMC DISTINCTIVE CHARACTERISTICS Provides control for 16K, 64K, and 256K and 1-megabit dynamic RAMs Outputs directly drive up to 8 8 DRAMs, with a guaran­ teed worst-case limit on the undershoot


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    PDF Am29368 Am2968A 32-bit QP002600 6164 ram memory

    AM29368

    Abstract: CGX068
    Text: Am29368 Advanced Micro Devices 1 Megabit Dynamic Memory Controller/Driver DMC DISTINCTIVE CHARACTERISTICS Provides control for 16K, 64K, and 256K and 1-megabit dynamic RAMs Outputs directly drive up to 8 8 DRAMs, with a guaran­ teed worst-case limit on the undershoot


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    PDF Am29368 Am2968A 32-bit OP002600 CGX068

    26BH

    Abstract: STP03 STK 4144 application circuit SI002
    Text: MICROELECTRONICS \_ J * Ê £re*//*nc* XL24E410 iflE* 4-Bit Microcontroller Emulator KEY FEATURES OVERVIEW • Low voltage, single power source V d d - 2.3 -5.5V ■ Memory — E2PROM for program (max.): 8192 x 8 bits — General-purpose RAM : 256 x 4 bits


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    PDF XL24E410 XL24E410DS 26BH STP03 STK 4144 application circuit SI002

    UM 6164

    Abstract: 6164 memory
    Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M ilitary 6164 8 K x 8-Bit Fast S ta tic Random A c c e s s Memory The 6164 is a 65,536-bit static random access m em ory organized as 8192 w ords of 8 bits, fabricated using M otorola's second-generation high-performance silicongate CM O S {HCM OS III technology. Static design elim inates the need for external


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    PDF 536-bit UM 6164 6164 memory

    AMC001FLKA

    Abstract: D1SS133
    Text: ÌMC001FLKA 1-MBYTE FLASH MEMORY CARD • Inherent Nonvolatility Zero Retention Power — No Batteries Required for Back-Up m High-Performance Read — 200 ns Maximum Access Time ■ CMOS Low Power Consumption — 25 mA Typical Active Current (X8) — 400 jxA Typical Standby Current


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    PDF MC001FLKA AP-343, 4fl2bl75 AMC001FLKA D1SS133

    29039

    Abstract: No abstract text available
    Text: in te i 1 ÌMC001FLKA •MBYTE FLASH MEMORY CARD Inherent Nonvolatility Zero Retention Power — No Batteries Required for Back-Up High-Performance Read — 200 ns Maximum Access Time CMOS Low Power Consumption — 25 mA Typical Active Current (X8) — 400 jitA Typical Standby Current


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    PDF MC001FLKA 68-Pin TypicaER-20, RR-60, AP-343, 29039

    Untitled

    Abstract: No abstract text available
    Text: Paradigm PDM44538 32K x 18 Fast CMOS Synchronous Static RAM with Linear Burst Counter Features Description Interfaces directly with the Motorola 680x0 and PowerPC microprocessors 80,66, 60, 50 MHz The PDM44538 is a 589,824 bit synchronous random access memory organized as 32,768 x 18 bits. It has


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    PDF PDM44538 680x0 PDM44538

    Untitled

    Abstract: No abstract text available
    Text: E/M47F010 1024K Bit CMOS Flash EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features • 128K Byte Flash Erasable Non• Volatile Memory ■ Input Latches for Writing and Erasing ■ Fast Byte Write: 225 ps max rn -5 5 °C to +125°C Temp Read M47F010


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    PDF E/M47F010 1024K M47F010) E47F010) MD400084/- E/M47F010 47F010