ks57c2316
Abstract: KS57C21708 KS57P21708 SAM47
Text: Product Overview Address Spaces Addressing Modes Memory Map SAM47 Instruction Set KS57C21708/P21708 Preliminary Spec 1 PRODUCT OVERVIEW PRODUCT OVERVIEW OVERVIEW The KS57C21708 single-chip CMOS microcontroller has been designed for very high performance using
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SAM47
KS57C21708/P21708
KS57C21708
SAM47
up-to-13-digit
16-bit
64-pin
40-PIN
SEG24
ks57c2316
KS57P21708
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ECU microcontroller
Abstract: ATA6614 mt 6252 sram 62512 62512 sram ATMEGA168PA ATA6614P 62512 RAM 64k x 8 ATA6630 KL15
Text: General Features • Single-package Fully-integrated AVR 8-bit Microcontroller with LIN Transceiver and • • • • • • 5V Regulator 85mA current capability Very Low Current Consumption in Sleep Mode 32Kbytes Flash Memory for Application Program
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32Kbytes
QFN48,
ATA6614P
ATA6630,
ECU microcontroller
ATA6614
mt 6252
sram 62512
62512 sram
ATMEGA168PA
62512 RAM 64k x 8
ATA6630
KL15
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IP175D
Abstract: IP175 IP175 D IP175 datasheet 7 segment display duplex led type QFP-128L 14880 h60 buffer 93C46 05h12
Text: IP175 5 Port 10/100 Ethernet Integrated Switch Feature Utilize single clock source only 25Mhz 5 port 10/100 Ethernet switch with built in transceivers Utilize single power (2.5v) and memory 0.25um technology Build in SSRAM for frame buffer Packaged in 128 pin PQFP
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IP175
25Mhz)
IEEE802
IP175
IP175-DS-P05
IP175D
IP175 D
IP175 datasheet
7 segment display duplex led type
QFP-128L
14880
h60 buffer
93C46
05h12
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sandisk micro sd
Abstract: digital clock using at89s52 microcontroller stepper motor control with avr application notes sandisk micro sd card pin configuration vhdl code for rs232 receiver STK 435 power amplifier Microcontroller AT89S52 vhdl code for ofdm Microcontroller AT89S52 40 pin fingerprint scanner circuit
Text: Atmel Corporation Atmel Operations Corporate Headquarters 2325 Orchard Parkway San Jose, CA 95131 TEL 1 408 441-0311 FAX 1 (408) 487-2600 Memory 2325 Orchard Parkway San Jose, CA 95131 TEL 1 (408) 441-0311 FAX 1 (408) 436-4314 Regional Headquarters Microcontrollers
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CH-1705
3271B
sandisk micro sd
digital clock using at89s52 microcontroller
stepper motor control with avr application notes
sandisk micro sd card pin configuration
vhdl code for rs232 receiver
STK 435 power amplifier
Microcontroller AT89S52
vhdl code for ofdm
Microcontroller AT89S52 40 pin
fingerprint scanner circuit
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2114 Ram pinout 18
Abstract: 9114 RAM 2114 static ram 2114 static ram ic ic 2114 MWS5114E3 9114 static ram MWS5114-3 2114 4 bit Ram pinout 2114 ram
Text: MWS5114 1024-Word x 4-Bit LSI Static RAM March 1997 Features Description • Fully Static Operation The MWS5114 is a 1024 word by 4-bit static random access memory that uses the ion-implanted silicon gate complementary MOS CMOS technology. It is designed for use in
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MWS5114
1024-Word
MWS5114
2114 Ram pinout 18
9114 RAM
2114 static ram
2114 static ram ic
ic 2114
MWS5114E3
9114 static ram
MWS5114-3
2114 4 bit Ram pinout
2114 ram
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ATA6614
Abstract: 62512 RAM 64k x 8 62512 sram sram 62512 sram 62512 512k x 16 62512 RAM MA 6216 IEC 61082 IEC 62391 MT 6253
Text: General Features • Single-package Fully-integrated AVR 8-bit Microcontroller with LIN Transceiver and • • • • • • 5V Regulator Very Low Current Consumption in Sleep Mode 32Kbytes Flash Memory for Application Program Supply Voltage Up to 40V Operating Voltage: 5V to 27V
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32Kbytes
QFN48,
ATA6614
ATA6630,
62512 RAM 64k x 8
62512 sram
sram 62512
sram 62512 512k x 16
62512 RAM
MA 6216
IEC 61082
IEC 62391
MT 6253
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Untitled
Abstract: No abstract text available
Text: STI648004G1 -60VG 144-PIN SO-DIMMS 8M X 64 Bits DRAM SO-DIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC ^RC ^HPC 60ns 15ns 104ns 25ns The Simple Technology STI648004G1-60VG is a 8M x 64 bits Dynamic RAM high density memory module. The Simple
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STI648004G1
-60VG
144-PIN
104ns
STI648004G1-60VG
32-pin
400-mil
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6164 ram memory
Abstract: intel 6164 ram internal diagram of 7473 pin configuration of intel 80386 Unicorn Microelectronics 6164 memory PA10 PA11 PA12 PA13
Text: UNICORN MICROE LE CTRON ICS S4E D • ISTÖTÖÖ OOOQÖÖ1 5 ■ UM82C384 Memory Controller I General Description The UM82C384 is one of UMC’s High End AT HEAT Chip Set. It provides memory control functions which facilitate wide ranges of DRAM and CPU speed
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TE707Ã
UM82C384
16MHz,
20MHz
25MHz
120ns
T-5S-33
6164 ram memory
intel 6164 ram
internal diagram of 7473
pin configuration of intel 80386
Unicorn Microelectronics
6164 memory
PA10
PA11
PA12
PA13
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BPK72
Abstract: intel 7110 DMA Controller 8257 isbx-251
Text: APPLICATION NOTE AP-157 O c to b e r 1983 AP-157 INTRODUCTION^ The 7220-! is a single-chip LSI Bubble Memory Controller BMC that implements a bubble memory storage subsystem (with up to eight bubble storage units (BSUs) per BMC). Each bubble storage unit consists of five support circuits in addition
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AP-157
BPK72
intel 7110
DMA Controller 8257
isbx-251
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Interfacing of 32k ram and 16K EPROM with 8085
Abstract: 83ML-5M3B STR F 6168 31 v power STR F 6168 d78p238 interfacing of RAM and ROM with 8085 78234 PD7823 P2511 T2042
Text: * ^ ^ , NEC Electronics Inc. D e scrip tio n The |xPD78233, jiPD78234, and (jiPD78P238 are high performance, 8 -bit, single-chip microcomputers. They contain extended addressing capabilities for up to 1M byte of external memory. The devices also integrate sophisti
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uPD7823x
xPD78233,
jiPD78234,
jiPD78P238
PD7823x
addr16ifrl*
addr16
addr16
Interfacing of 32k ram and 16K EPROM with 8085
83ML-5M3B
STR F 6168 31 v power
STR F 6168
d78p238
interfacing of RAM and ROM with 8085
78234
PD7823
P2511
T2042
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Untitled
Abstract: No abstract text available
Text: ÌMC001FLKA 1-MEGABYTE FLASH MEMORY CARD • Inherent Nonvoiatility Zero Retention Power - No Batteries Required for Back-up ■ Over 1,000,000 Hours MTBF - More Reliable than Disk ■ High-Performance Read - 250 ns Maximum Access Time ■ Command Register Architecture for
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MC001FLKA
1MC001
MC001FLKA
ER-20,
RR-60,
AP-343,
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58AZ
Abstract: No abstract text available
Text: Am29368 Advanced Micro Devices 1 Megabit Dynamic Memory Controller/Driver DMC DISTINCTIVE CHARACTERISTICS Provides control for 16K, 64K, and 256K and 1-megabit dynamic RAMs Outputs directly drive up to 88 DRAMs. with a guaran teed worst-case limit on the undershoot
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Am29368
Am2968A
32-bit
QP002600
58AZ
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Am29F080B reverse pinout
Abstract: SA10-SA11
Text: AM DH Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
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Am29F080B
Am29F080
CS39S
20-year
Am29F080B reverse pinout
SA10-SA11
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altl
Abstract: No abstract text available
Text: Advanced CMOS SRAM KM6164000AL/AL-L 256Kx16 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns max. The KM6164000AL/AL-L is a 4,194,304-bit high speed • Low Power Dissipation Static Random Access Memory organized as 262,144
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KM6164000AL/AL-L
256Kx16
KM6164000AL/AL-L
304-bit
6164000AL/AL-L
KM6164he
KM6164000ALT/ALT-L:
400mil
0D213G1
altl
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intel 82258
Abstract: 82258 ulm 2003 logical block diagram of 80286 intel organisational structure 8225Q 80186 CPU subsystem bus controller 8288 intel 82188 CPU-82258
Text: in t e T 82258 ADVANCED DIRECT MEMORY ACCESS COPROCESSOR ADMA Automatic Data Chaining for Gathering and Scattering of Data Blocks 16 MByte Addressing Range 16 MByte Block Transfer Capability “On the Fly” Compare, Translate and Verify Operations Automatic Assembly/Disassembly of
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68-Pin
intel 82258
82258
ulm 2003
logical block diagram of 80286
intel organisational structure
8225Q
80186 CPU subsystem
bus controller 8288
intel 82188
CPU-82258
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MCM6164
Abstract: MCM61L64 MCM61L64C55 6164 memory UM 6164 M6164 61L64
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6164 MCM61L64 8 K x 8 Bit Fast S tatic Random Access M em o ry The M C M 6164/M CM 61L64 is a 65,536 bit static random access memory organized as 8192 words of 8 bits, fabricated using Motorola's second-generation high-performance silicon-gate CM OS {HCMOS III technology. Static design eliminates the need for external
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6164/M
61L64
MCM6164
MCM61L64
6164C
61L64
MCM61L64C45
MCM61L64C55
MCM61L64
MCM61L64C55
6164 memory
UM 6164
M6164
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6164 ram memory
Abstract: No abstract text available
Text: a Am29368 Advanced Micro Devices 1 Megabit Dynamic Memory Controller/Driver DMC DISTINCTIVE CHARACTERISTICS Provides control for 16K, 64K, and 256K and 1-megabit dynamic RAMs Outputs directly drive up to 8 8 DRAMs, with a guaran teed worst-case limit on the undershoot
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Am29368
Am2968A
32-bit
QP002600
6164 ram memory
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AM29368
Abstract: CGX068
Text: Am29368 Advanced Micro Devices 1 Megabit Dynamic Memory Controller/Driver DMC DISTINCTIVE CHARACTERISTICS Provides control for 16K, 64K, and 256K and 1-megabit dynamic RAMs Outputs directly drive up to 8 8 DRAMs, with a guaran teed worst-case limit on the undershoot
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Am29368
Am2968A
32-bit
OP002600
CGX068
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26BH
Abstract: STP03 STK 4144 application circuit SI002
Text: MICROELECTRONICS \_ J * Ê £re*//*nc* XL24E410 iflE* 4-Bit Microcontroller Emulator KEY FEATURES OVERVIEW • Low voltage, single power source V d d - 2.3 -5.5V ■ Memory — E2PROM for program (max.): 8192 x 8 bits — General-purpose RAM : 256 x 4 bits
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XL24E410
XL24E410DS
26BH
STP03
STK 4144 application circuit
SI002
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UM 6164
Abstract: 6164 memory
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M ilitary 6164 8 K x 8-Bit Fast S ta tic Random A c c e s s Memory The 6164 is a 65,536-bit static random access m em ory organized as 8192 w ords of 8 bits, fabricated using M otorola's second-generation high-performance silicongate CM O S {HCM OS III technology. Static design elim inates the need for external
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536-bit
UM 6164
6164 memory
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AMC001FLKA
Abstract: D1SS133
Text: ÌMC001FLKA 1-MBYTE FLASH MEMORY CARD • Inherent Nonvolatility Zero Retention Power — No Batteries Required for Back-Up m High-Performance Read — 200 ns Maximum Access Time ■ CMOS Low Power Consumption — 25 mA Typical Active Current (X8) — 400 jxA Typical Standby Current
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MC001FLKA
AP-343,
4fl2bl75
AMC001FLKA
D1SS133
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29039
Abstract: No abstract text available
Text: in te i 1 ÌMC001FLKA •MBYTE FLASH MEMORY CARD Inherent Nonvolatility Zero Retention Power — No Batteries Required for Back-Up High-Performance Read — 200 ns Maximum Access Time CMOS Low Power Consumption — 25 mA Typical Active Current (X8) — 400 jitA Typical Standby Current
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MC001FLKA
68-Pin
TypicaER-20,
RR-60,
AP-343,
29039
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Untitled
Abstract: No abstract text available
Text: Paradigm PDM44538 32K x 18 Fast CMOS Synchronous Static RAM with Linear Burst Counter Features Description Interfaces directly with the Motorola 680x0 and PowerPC microprocessors 80,66, 60, 50 MHz The PDM44538 is a 589,824 bit synchronous random access memory organized as 32,768 x 18 bits. It has
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PDM44538
680x0
PDM44538
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Untitled
Abstract: No abstract text available
Text: E/M47F010 1024K Bit CMOS Flash EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features • 128K Byte Flash Erasable Non• Volatile Memory ■ Input Latches for Writing and Erasing ■ Fast Byte Write: 225 ps max rn -5 5 °C to +125°C Temp Read M47F010
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E/M47F010
1024K
M47F010)
E47F010)
MD400084/-
E/M47F010
47F010
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