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    MEE TRANSIENT Search Results

    MEE TRANSIENT Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation

    MEE TRANSIENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXYS MEO 450-12DA

    Abstract: ixys 550-02da 250-12DA MEA 75-12 DA diode FRED module MEA75-12DA 300-06DA 550-02DA D3-11 MEA75-12
    Text: FRED Modules Contents Package style 1 TO-240 AA Type Page 250 MEK/MEA/MEE 95-06 DA D3-2 75 250 MEK/MEA/MEE 75-12 DA D3-4 200 356 200 MEK 350-02 DA D3-5 200 582 150 MEO 550-02 DA D3-7 600 304 250 MEK/MEA/MEE 300-06 DA D3-9 2 600 514 250 MEO 500-06 DA D3-11


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    PDF D3-11 D3-13 D3-15 O-240 IXYS MEO 450-12DA ixys 550-02da 250-12DA MEA 75-12 DA diode FRED module MEA75-12DA 300-06DA 550-02DA D3-11 MEA75-12

    300-06DA

    Abstract: No abstract text available
    Text: MEA 300-06 DA MEK 300-06 DA MEE 300-06 DA Fast Recovery Epitaxial Diode FRED Module VRRM = 600 V IFAVM = 304 A trr = 250 ns Preliminary data VRSM V 600 VRRM Type V 600 2 MEA 300-06DA 1 2 MEK 300-06DA 3 1 2 1 MEE 300-06DA 3 1 2 3 3 Symbol Test Conditions


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    PDF 300-06DA 300-06DA

    Untitled

    Abstract: No abstract text available
    Text: MEA 250-12 DA MEK 250-12 DA MEE 250-12 DA Fast Recovery Epitaxial Diode FRED Module VRRM = 1200 V IFAVM = 260 A = 450 ns trr Preliminary data 2 VRSM VRRM V V 1200 1200 Type MEA 250-12DA 1 2 3 1 MEK 250-12DA 3 1 2 MEE 250-012DA 3 1 2 3 Symbol Test Conditions


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    PDF 250-12DA 250-012DA

    Untitled

    Abstract: No abstract text available
    Text: MEA 300-06 DA MEK 300-06 DA MEE 300-06 DA Fast Recovery Epitaxial Diode FRED Module VRRM = 600 V IFAVM = 304 A = 250 ns trr Preliminary data VRSM V 600 VRRM Type V 600 2 MEA 300-06DA 1 2 MEK 300-06DA 3 1 2 1 MEE 300-06DA 3 1 2 3 3 Symbol Test Conditions


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    PDF 300-06DA

    Untitled

    Abstract: No abstract text available
    Text: MEA 75-12 DA MEK 75-12 DA MEE 75-12 DA Fast Recovery Epitaxial Diode FRED Module Preliminary data VRRM = 1200 V IFAV = 75 A = 250 ns trr 3 TO-240 AA 2 VRSM VRRM V V 1200 1200 1 Type MEA75-12 DA 1 2 MEK 75-12 DA 3 1 2 3 MEE 75-12 DA 1 2 3 Symbol Test Conditions


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    PDF O-240 MEA75-12

    250-12DA

    Abstract: No abstract text available
    Text: MEA 250-12 DA MEK 250-12 DA MEE 250-12 DA Fast Recovery Epitaxial Diode FRED Module VRRM = 1200 V IFAVM = 260 A trr = 450 ns Preliminary data 2 VRSM VRRM V V 1200 1200 Type MEA 250-12DA 1 2 3 1 MEK 250-12DA 3 1 2 MEE 250-012DA 3 1 2 3 Symbol Test Conditions


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    PDF 250-12DA 250-012DA 250-12DA

    NEC MYS

    Abstract: FR-S540E S-N10 Magnetic Contactor FR-S520se magnetic S-N20 mitsubishi s-n10 FR-S520E-0 fr-s540e-3.7k user manual service manual FR-S520SE S-N10 Contactor
    Text: INVERTER FR-S500 FR-S500E TRANSISTORIZED INVERTER INSTRUCTION MANUAL BASIC HEAD OFFICE:MITSUBISHI DENKI BLDG MARUNOUCHI TOKYO 100-8310 B IB(NA)-0600151E-B (0408) MEE Printed in Japan Specifications subject to change without notice. INSTRUCTION MANUAL (BASIC)


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    PDF FR-S500 FR-S500E FR-S520E-0 FR-S540E-0 FR-S520SE-0 FR-S510WE-0 FR-S500 -0600152E] NEC MYS FR-S540E S-N10 Magnetic Contactor FR-S520se magnetic S-N20 mitsubishi s-n10 fr-s540e-3.7k user manual service manual FR-S520SE S-N10 Contactor

    FR-A740

    Abstract: diagram wiring mitsubishi elevator FR-A200 vfd WITH BYPASS star delta wiring diagram motor FR-A700 FR-BSF01 FR-A740-00620-EC FR-A740-00770-EC brake rectifier ABR 2300 FR-A740-00310-EC
    Text: FR-A700-EC INVERTER IB-0600257ENG-A 0603 MEE Printed in Japan Specifications subject to change without notice. INSTRUCTION MANUAL (Applied) HEAD OFFICE:TOKYO BLDG MARUNOUCHI TOKYO 100-8310 A INVERTER FR-A700 INSTRUCTION MANUAL (Applied) FR-A740-00023 to 12120-EC


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    PDF FR-A700-EC FR-A700 FR-A740-00023 12120-EC IB-0600257ENG-A FR-A700 FR-A740 diagram wiring mitsubishi elevator FR-A200 vfd WITH BYPASS star delta wiring diagram motor FR-BSF01 FR-A740-00620-EC FR-A740-00770-EC brake rectifier ABR 2300 FR-A740-00310-EC

    diagram wiring mitsubishi elevator

    Abstract: FR-D740-012 mitsubishi MODBUS RTU FR-D740-036 FR-D740-120 FR-D700 mitsubishi motor SF-HRCA FR-BSF01 MITSUBISHI INVERTER FR-D720S
    Text: FR-D700-EC INVERTER IB NA -0600353ENG-C (0804)MEE Printed in Japan Specifications subject to change without notice. INSTRUCTION MANUAL HEAD OFFICE: TOKYO BUILDING 2-7-3, MARUNOUCHI, CHIYODA-KU, TOKYO 100-8310, JAPAN C INVERTER FR-D700 INSTRUCTION MANUAL FR-D740-012 to 160 - EC


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    PDF FR-D700-EC FR-D700 FR-D740-012 FR-D720S-008 -0600353ENG-C FR-D700 diagram wiring mitsubishi elevator mitsubishi MODBUS RTU FR-D740-036 FR-D740-120 mitsubishi motor SF-HRCA FR-BSF01 MITSUBISHI INVERTER FR-D720S

    mee transient

    Abstract: 95-06DA
    Text: MEA 95-06 DA MEK 95-06 DA MEE 95-06 DA Fast Recovery Epitaxial Diode FRED Module VRSM VRRM V V 600 600 2 MEA95-06 DA 2 MEK 95-06 DA 3 1 2 Test Conditions IFRMS IFAVÿÿ① IFRM Tcase = 75°C Tcase = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM


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    PDF MEA95-06 mee transient 95-06DA

    Untitled

    Abstract: No abstract text available
    Text: MEA 95-06 DA MEK 95-06 DA MEE 95-06 DA Fast Recovery Epitaxial Diode FRED Module VRSM VRRM V V 600 600 3 TO-240 AA Type 2 MEA95-06 DA 1 VRRM = 600 V IFAV = 95 A = 250 ns trr 2 MEK 95-06 DA 3 1 2 Symbol Test Conditions IFRMS IFAVÿÿ① IFRM Tcase = 75°C


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    PDF O-240 MEA95-06

    MEA75-12

    Abstract: No abstract text available
    Text: MEA 75-12 DA MEK 75-12 DA MEE 75-12 DA Preliminary data VRSM VRRM V V 1200 1200 TO-240 AA MEA75-12 DA 1 2 MEK 75-12 DA 3 1 2 3 1 2 3 Test Conditions Tcase= 75 °C Tcase= 75 °C; rectangular, d = 0.5 tP < 10 µs; rep. rating, pulse width limited by TVJM Maximum Ratings


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    PDF O-240 MEA75-12

    Untitled

    Abstract: No abstract text available
    Text: Fast Recovery Epitaxial Diode FRED Module MEA 95-06 DA VRRM = 600 V MEK 95-06 DA IFAV = 95 A MEE 95-06 DA trr = 250 ns 3 TO-240 AA 2 VRSM V 600 VRRM V 1 Type MEA95-06 DA 600 1 2 MEK 95-06 DA 3 1 2 Symbol Test Conditions I FRMS I FAV ¬ I FRM Tcase = 75°C


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    PDF O-240 MEA95-06

    IXAN0044

    Abstract: D94013DE ups manufacturing transformer diagram Bridge Rectifiers aeg MEO260-12DA3 AEG static inverter MOSFET welding INVERTER welding inverter circuit diagrams calculation of diode snubber calculation of IGBT snubber
    Text: Fast Recovery Epitaxial Diodes FRED Characteristics - Applications - Examples IXAN0044 Rüdiger Bürkel, Thomas Schneider During the last 10 years, power supply topology has undergone a basic change. Power supplies of all kinds are now constructed so that heavy and bulky


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    PDF IXAN0044 D94013DE) IXAN0044 D94013DE ups manufacturing transformer diagram Bridge Rectifiers aeg MEO260-12DA3 AEG static inverter MOSFET welding INVERTER welding inverter circuit diagrams calculation of diode snubber calculation of IGBT snubber

    BEM 45

    Abstract: 6v8ca 1.5 33ca do214ab 6v8a 39ca diode 6v8a TVS 15CA 68CA tvs, 33ca
    Text: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com SM15T SERIES SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR


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    PDF SM15T E223026 BEM 45 6v8ca 1.5 33ca do214ab 6v8a 39ca diode 6v8a TVS 15CA 68CA tvs, 33ca

    Untitled

    Abstract: No abstract text available
    Text: SKDT 115 SEMIPONTTM 5 Bridge Rectifier SKDT 115 Target Data Features # $%&' * +,-./0 # 12% -)3,2- &%40*.0/ # 5,(* *3(0-6,3 (0+ .-%7(*.%0 # *83%4/8 +.3,)* )%'',3 9%(3+ :7%2 ;*8 < =%2 3,-.-*(0), .0 -*,(+>?-*(*, (0+ 8./8 3,7.(9.7.*> 5./8 -43/, )433,0*@7(- '(-.A(*,+ *8>3.-*%3 )8.'B' *% CDEE F 3,A,3-, A%7*(/,


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    PDF

    diode 6v8a

    Abstract: Diode marking MFW 6v8a diode 001 6V8A 029 6v8a on 6v8a 6V8A DIODE 001 6V8A 950 6V8A marking code MFW
    Text: SM15T6V8,A/220,A SM15T6V8C,CA/220C,CA  TRANSILTM FEATURES PEAK PULSE POWER= 1500 W @ 1ms BREAKDOWN VOLTAGE RANGE : From 6V8 to 220 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED SOD 15 Plastic DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous reponse to transients makes them particularly


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    PDF SM15T6V8 SM15T6V8C CA/220C diode 6v8a Diode marking MFW 6v8a diode 001 6V8A 029 6v8a on 6v8a 6V8A DIODE 001 6V8A 950 6V8A marking code MFW

    Untitled

    Abstract: No abstract text available
    Text: SK100WT SEMITOP 3 Antiparallel Thyristor Module SK100WT Preliminary Data Features # $%&' * +,-./0 # 10, -)2,3 &%40*.0/ # 5,(* *2(0-6,2 (07 .-%8(*.%0 *2%4/9 7.2,)* )%'',2 :%07,7 (84&.0.4& %;.7, ),2(&.) <+$=> ?8(- '(-.@,7 *9A2.-*%2 )9.'B' *% CDEEF 2,@,2-, @%8*(/,


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    PDF SK100WT

    Thyristor ys 130

    Abstract: No abstract text available
    Text: SKKT 280, SKKH 280 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 3 new Thyristor / Diode Modules SKKH 280 SKKT 280 Features # $%&' ' & *+%( ',(-./, &0.12)2.1 # )2'(23% 4%(&124 2*-0&'%3 1%'&0 5&*%60&'% 7(%42-.* 1%'&0 6(%*.(% 4-)'&4'* +-( ,2/, (%02&5202'8 9,8(2*'-( :2', &1602+82)/ /&'%


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    MC7912C

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC MC79XXC MEE D • 7=^4142 OOQTMBl b I S M G K LINEAR INTEGRATED CIRCUì 3-TERMINAL 1A NEGATIVE VOLTAGE REGULATORS TO-220 The MC79XX series of three-terminal negative regulators are available in TO-220 package and with several fixed output voltages, making them useful


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    PDF MC79XXC O-220 MC79XX O-220 1N4001 MC7912C

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC MC78XXC MEE D H TTbMlMS OGCHMIS fi M S t l G K LINEAR INTEGRATED CIRCUIT 3 -te rm in a l 1 a P ositive. VOLTAGE REGULATORS TO-220 The MC78XX series of three-terminal positive regulators are available in the TO-220 package and with several fixed output voltages, making them


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    PDF MC78XXC O-220 MC78XX O-220 D45H11

    Untitled

    Abstract: No abstract text available
    Text: MEE D SAMSUNG ELEC TRONICS INC n 7%4142 DGlOObS 1 BHSMiSK KM41C1002B CMOS DRAM 1M X 1 Bit C M O S Dynamic R A M with Static Column M ode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C1002B is a CMOS high speed 1,048,576 x 1 Dynamic Random Access Memory. Its de­


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    PDF KM41C1002B KM41C1002B KM41C1002B- 110ns 130ns 150ns KM41C1002B-10 KM41C1002B" 100ns

    6v8ca

    Abstract: BDP 162 bel bfw 10 BdP 285 150CA marking MGW bel bfw 10-0a BFW 100A bfx transil SM15T
    Text: SGS-THOMSON ;y SURFACE MOUNT DEVICES ' GENERAL PURPOSE & INDUSTRIAL TRANSIENT VOLTAGE SUPPRESSORS «TRANSIL» Type Marking 'RM @ V RM @ V BR * (V) •r max Unidirec­ tional Unidirec­ tional Bidirec­ tional Bidirec­ tional <*A) (V) min nom max (mA) V(CL) @ 'pp


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    PDF SM15T6V8 SM15T6V8C SM15T SM15T7V5 SM15T7V5C SM15T7V5A 6v8ca BDP 162 bel bfw 10 BdP 285 150CA marking MGW bel bfw 10-0a BFW 100A bfx transil

    vari-l dbm

    Abstract: Corning 7052 C2001 SS-91 107D 204C 213B SS91 MJL-C-26074 Vari-L Company dbm
    Text: SS-91 SPST Flatpack RF Switch 10-500 MHz URIL GUARANTEED MINIMUM PERFORMANCE DATA TEST CONDITION LIMITED WARRANTY Vari-t Company, Inc warrants its products against defects in pa'ts and workmanship for a period of one year. Impedance: 50 ohms 3rd Order Intercept Point: + 30 dBm


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    PDF SS-91 MIW-23011. MIL-STD-1276. MJL-C-26074, OO-S-571) vari-l dbm Corning 7052 C2001 107D 204C 213B SS91 MJL-C-26074 Vari-L Company dbm