nec 2501
Abstract: ic nec 2501 NESG250134 2501 NEC
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • This product is suitable for medium output power (800 mW) amplification
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NESG250134
NESG250134-Tconductor
nec 2501
ic nec 2501
NESG250134
2501 NEC
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NESG270034
Abstract: ic nec 2501 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ 2012 NEC
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz
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NESG270034
NESG270034-AZ
NESG270034-T1
NESG270034-T1-AZ
NESG270034
ic nec 2501
nec 2012
nec 2501
NESG270034-AZ
NESG270034-T1
NESG270034-T1-AZ
2012 NEC
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1005 Ic Data
Abstract: NESG260234 IC MARKING 1005 1005 TRANSISTOR
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz
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NESG260234
NESG260234
NESG260234-AZ
NESG260234-T1
NESG260234-T1-AZ
PU10547EJ02V0DS
LLQ2021
1005 Ic Data
IC MARKING 1005
1005 TRANSISTOR
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murata ma
Abstract: MURATA/murata ma
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz
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NESG250134
NESG250134-A
NESG250134-T1-A
PU10422EJ02V0DS
murata ma
MURATA/murata ma
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Untitled
Abstract: No abstract text available
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,
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NESG2101M16
NESG2101M16
PU10395EJ03V0DS
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1005 Ic Data
Abstract: NESG270034
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz
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NESG270034
NESG270034
NESG270034-AZ
NESG270034-T1
NESG270034-T1-AZ
PU10577EJ02V0DS
1005 Ic Data
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nec 2012
Abstract: NESG270034 2012 NEC PU10577EJ01V0DS nec 2501 NESG270034-AZ NESG270034-T1 NESG270034-T1-AZ
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz
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NESG270034
NESG270034-AZ
NESG270034-T1
NESG270034-T1-AZ
nec 2012
NESG270034
2012 NEC
PU10577EJ01V0DS
nec 2501
NESG270034-AZ
NESG270034-T1
NESG270034-T1-AZ
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NESG260234
Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz
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NESG260234
NESG260234-AZ
NESG260234-T1
NESG260234
LLQ2021
NESG260234-T1
NESG260234-T1-AZ
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nec 2501
Abstract: 2501 NEC ic nec 2501 NESG260234
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification PO = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz
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NESG260234
NESG260234
NESG260234-AZ
NESG260234-T1
NESG260234-T1-AZ
nec 2501
2501 NEC
ic nec 2501
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NESG260234
Abstract: LLQ2021 NESG260234-T1 NESG260234-T1-AZ
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG260234 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 1 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (1 W) amplification Pout = 30 dBm TYP. @ VCE = 6 V, Pin = 15 dBm, f = 460 MHz
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NESG260234
NESG260234-AZ
NESG260234-T1
NESG260234
LLQ2021
NESG260234-T1
NESG260234-T1-AZ
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ic nec 2501
Abstract: NESG270034 NESG270034-T1 nec 2012 nec 2501 NESG270034-AZ NESG270034-T1-AZ IC MARKING 1005 5 pin nec microwave marking NEC rf transistor
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz
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NESG270034
NESG270034-AZ
NESG270034-T1
NESG270034-T1-AZ
ic nec 2501
NESG270034
NESG270034-T1
nec 2012
nec 2501
NESG270034-AZ
NESG270034-T1-AZ
IC MARKING 1005 5 pin
nec microwave
marking NEC rf transistor
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NESG250134
Abstract: NESG250134-AZ NESG250134-T1-AZ
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz
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NESG250134
NESG250134-AZ
NESG250134-T1
NESG250134
NESG250134-AZ
NESG250134-T1-AZ
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NESG2101M16
Abstract: NESG2101M16-T3 NESG2101M16-T3-A
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M16
M8E0904E
NESG2101M16
NESG2101M16-T3
NESG2101M16-T3-A
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transistor T1J
Abstract: NESG2101M05-A transistor T1J 4pin M05 MARKING
Text: NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise,
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NESG2101M05
NESG2101M05-A
NESG2101M05-TERISTICS
PU10190EJ02V0DS
transistor T1J
transistor T1J 4pin
M05 MARKING
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NESG250134
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG250134 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 800 mW 3-PIN POWER MINIMOLD (34 PACKAGE) FEATURES • This product is suitable for medium output power (800 mW) amplification PO = 29 dBm TYP. @ VCE = 3.6 V, Pin = 15 dBm, f = 460 MHz
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NESG250134
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NESG250134
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nec japan 7812
Abstract: NEC 7812 transistor NEC 7812 7812 nec 2SC5750 2SC5750-T1 7812 4pin R54 Transistor k 3531 transistor TRANSISTOR IC 18751
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5750 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW 4-PIN SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm
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2SC5750
2SC5750-T1
nec japan 7812
NEC 7812
transistor NEC 7812
7812 nec
2SC5750
2SC5750-T1
7812 4pin
R54 Transistor
k 3531 transistor
TRANSISTOR IC 18751
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ne678m04-a
Abstract: 2SC5753
Text: NPN SILICON RF TRANSISTOR NE678M04 / 2SC5753 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 60 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 18.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 7 dBm
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NE678M04
2SC5753
NE678M04-A
2SC5753-A
NE678M04-T2-A
2SC5753-T2-A
P15659EJ1V0DS
2SC5753
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nec 2501
Abstract: marking NEC rf transistor ic nec 2501 PU10577EJ01V0DS nec 2012 2501 NEC NESG270034 nec npn rf 15 w RF POWER TRANSISTOR NPN
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG270034 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 2 W 3-PIN POWER MINIMOLD (34 PKG) FEATURES • This product is suitable for medium output power (2 W) amplification Pout = 33.5 dBm TYP. @ VCE = 6 V, Pin = 20 dBm, f = 460 MHz
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NESG270034
NESG270034
NESG270034-AZ
NESG270034-T1
NESG270034-T1-AZ
nec 2501
marking NEC rf transistor
ic nec 2501
PU10577EJ01V0DS
nec 2012
2501 NEC
nec npn rf
15 w RF POWER TRANSISTOR NPN
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NESG2101M16
Abstract: NESG2101M16-T3
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M16
NESG2101M16
NESG2101M16-T3
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M16 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M16
NESG2101M16
M8E0904E
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p1565
Abstract: 2SC5751
Text: NPN SILICON RF TRANSISTOR NE677M04 / 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm
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NE677M04
2SC5751
NE677M04-A
2SC5751-A
NE677M04-T2-A
2SC5751-T2-A
P15657EJ1V0DS
p1565
2SC5751
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nec 14305
Abstract: 14305 NEC k 3918 TRANSISTOR OF IC 7909 2SC5751-T2 2SC5751
Text: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm
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2SC5751
2SC5751-T2
nec 14305
14305 NEC
k 3918 TRANSISTOR
OF IC 7909
2SC5751-T2
2SC5751
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transistor T1J
Abstract: NESG2101M05-T1 NESG2101M05
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05) FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M05
PU10190EJ02V0DS
transistor T1J
NESG2101M05-T1
NESG2101M05
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transistor T1J
Abstract: T1J marking
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2101M05 NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 125 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplification
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NESG2101M05
NESG2101M05
transistor T1J
T1J marking
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