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    Abstract: No abstract text available
    Text: MECGaNC30 4 to 6 GHz GaN HEMT Power Amplifier Main Features 0.25µm GaN HEMT Technology 4.1 – 5.9 GHz full performances Frequency Range 30W Output Power @ Pin 27.5 dBm 37% PAE @ Pin 27.5 dBm 30% PAE @ Pout 20 Watt 27 dB Small Signal Gain Bias: Vd = 28V, Id = 1A, Vg = -3V Typ.


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