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    MCT 600V Search Results

    MCT 600V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation

    MCT 600V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET D LND090A/B/C/D Revolutionary LF-MCTs Replace MOSFETs, Bipolars & IGBTs In Switching Apps with only 1.9nC Gate Charge GENERAL DESCRIPTION Linear Dimensions introduces the revolutionary Linear Fast MCT LF-MCT . A Linear Dimensions proprietary MCT


    Original     		PDF LND090A/B/C/D 800ns+ O-252

    MOS Controlled Thyristor

    Abstract: MCT thyristor MCTV75P60E1 MA75P60E1
    Text: April 1998 NS ESIG 2 D 00F NEW S E M I C O N D U C T O R OR 3D65P1 F D NDE MCT MME 100F2, O C RE 65P NOT MCT3A See MCTV75P60E1, MCTA75P60E1 75A, 600V P-Type MOS Controlled Thyristor MCT Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC


    Original     		PDF 3D65P1 100F2, MCTV75P60E1, MCTA75P60E1 O-247 -600V 150oC MOS Controlled Thyristor MCT thyristor MCTV75P60E1 MA75P60E1

    MCT thyristor

    Abstract: mct 600v MCT harris MOS Controlled Thyristor MCTV35P60F1D MCTV35P6
    Text: MCTV35P60F1D Semiconductor April 1999 AWN NS 35A, 600V ITHDR DESIG PART W E - NO NEW Thyristor MCT OLET S OBS S PROCE Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC


    Original     		PDF MCTV35P60F1D -600V O-247 150oC factor/100) MCT thyristor mct 600v MCT harris MOS Controlled Thyristor MCTV35P60F1D MCTV35P6

    MCT thyristor

    Abstract: MCTV75P60E1 MOS Controlled Thyristor MCT harris "MOS Controlled Thyristors" mct thyristor datasheet MCTA75P60E1 MCTV75P6
    Text: Semiconductor IGNS WN DRA EW DES H T I TW ON PAR ETE - N L BSO SS O 75A, 600V P-Type MOS Controlled Thyristor MCT CE April 1999 PRO MCTV75P60E1, MCTA75P60E1 Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC


    Original     		PDF MCTV75P60E1, MCTA75P60E1 O-247 -600V 150oC MO-093AA O-218) MCT thyristor MCTV75P60E1 MOS Controlled Thyristor MCT harris "MOS Controlled Thyristors" mct thyristor datasheet MCTA75P60E1 MCTV75P6

    MOS Controlled Thyristor

    Abstract: MCTA75P60E1 MCTV75P60E1
    Text: MCTV75P60E1, MCTA75P60E1 S E M I C O N D U C T O R 75A, 600V P-Type MOS Controlled Thyristor MCT April 1995 Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC • 2000A Surge Current Capability


    Original     		PDF MCTV75P60E1, MCTA75P60E1 O-247 -600V 150oC MO-093AA O-218) MOS Controlled Thyristor MCTA75P60E1 MCTV75P60E1

    Untitled

    Abstract: No abstract text available
    Text: Super 12 Featured Products Build Vishay into your Design Thin Film Chip Resistors TNPW 0603 e3 and MCT 0603 AT High pulse load and long-term stability devices Features: - 175 ºC operating temperature - High pulse load stability - Long-term stability: ≤ 0.25 % P70 for 1000 h


    Original     		PDF AEC-Q200 480-Mbps) DG2722 900-MHz miniQFN10

    MOS Controlled Thyristor

    Abstract: MCT thyristor "MOS Controlled Thyristors" 100DV MCTG35P60F1 MCTG35P6
    Text: MCTG35P60F1 Semiconductor April 1999 WN IGNS ITHDRA W T R W DES A E P N O N EP-Type SOLET ESS OB PROC Features 35A, 600V MOS Controlled Thyristor MCT Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C A • 800A Surge Current Capability


    Original     		PDF MCTG35P60F1 -600V O-247 150oC MOS Controlled Thyristor MCT thyristor "MOS Controlled Thyristors" 100DV MCTG35P60F1 MCTG35P6

    MCT thyristor

    Abstract: MOS Controlled Thyristor MCT harris mct 600v MCTV35P60F1D diode ik 60
    Text: MCTV35P60F1D S E M I C O N D U C T O R 35A, 600V P-Type MOS Controlled Thyristor MCT with Anti-Parallel Diode March 1995 Features Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC • 800A Surge Current Capability A • 800A/µs di/dt Capability


    Original     		PDF MCTV35P60F1D -600V O-247 150oC factor/100) MCT thyristor MOS Controlled Thyristor MCT harris mct 600v MCTV35P60F1D diode ik 60

    MOS Controlled Thyristor

    Abstract: MCT thyristor "MOS Controlled Thyristors" mos Turn-off Thyristor MCTG35P60F1 MCTS "mos controlled thyristor"
    Text: MCTG35P60F1 S E M I C O N D U C T O R 35A, 600V P-Type MOS Controlled Thyristor MCT April 1995 Features Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C A • 800A Surge Current Capability K • 800A/µs di/dt Capability


    Original     		PDF MCTG35P60F1 -600V O-247 150oC MOS Controlled Thyristor MCT thyristor "MOS Controlled Thyristors" mos Turn-off Thyristor MCTG35P60F1 MCTS "mos controlled thyristor"

    MOS Controlled Thyristor

    Abstract: mct 575 "MOS Controlled Thyristors" "mos controlled thyristor" MCT thyristor Thyristors application circuits
    Text: MCTG35P60F1 S E M I C O N D U C T O R April 1998 NS DESIG W E N 2 R P100F ED FO MEND 2, MCT3D65 M O C E P-Type NOT R T3A65P100F C M e e S Features 35A, 600V MOS Controlled Thyristor MCT Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C


    Original     		PDF P100F MCT3D65 T3A65P100F MCTG35P60F1 O-247 -600V 150oC MOS Controlled Thyristor mct 575 "MOS Controlled Thyristors" "mos controlled thyristor" MCT thyristor Thyristors application circuits

    MCT thyristor

    Abstract: MCT harris 3A65P100F2 IK25 THYRISTOR 35A 300V diode ik 60
    Text: MCTV35P60F1D S E M I C O N D U C T O R April 1998 S DESIGN R NEW O F 2 F D E 35A, 600V ND P10 COMME CT3D65 NOT RE 3A65P100F2, M Thyristor MCT T See MC Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC


    Original     		PDF MCTV35P60F1D O-247 CT3D65 3A65P100F2, -600V 150oC factor/100) MCT thyristor MCT harris 3A65P100F2 IK25 THYRISTOR 35A 300V diode ik 60

    TRANSISTOR BIPOLAR 400V 20A

    Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
    Text: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .


    OCR Scan     		PDF HGTD6N40E1, HGTD6N40E1S, HGTD6N50E1, HGTD6N50E1S HGTP6N40E1D, HGTP6N50E1D HGTP10N40C1, HGTH12N40C1, HGTP10N40C1D, HGTP10N40E1D, TRANSISTOR BIPOLAR 400V 20A igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT

    igbt 400V 20A

    Abstract: igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V
    Text: I- MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS IGBTs PAGE SELECTION G U ID E .


    OCR Scan     		PDF HGTD6N40E1, HGTD6N50E1, HGTD10N40F1, HGTD10N50F1, HGTH12N40C1, HGTM12N40C1, HGTP10N40C1, HGTM12N60D1 HGTP12N60D1 HGTH20N40C1, igbt 400V 20A igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V

    1gbt

    Abstract: No abstract text available
    Text: — MCT/1GBT/DI0DES 9 PREVIEW PRODUCTS PAGE SELECTION G U ID E . 9-2 PREVIEW PRODUCTS DATA SHEET


    OCR Scan     		PDF HGTG40N60B3 1gbt

    diode 6A 1000v

    Abstract: diode 400V 4A Hyperfast Diode 1200V IGBT 1000V .50A RHRP3060 400v 50A DIODE rhrp15120 rhrp860 diode rhrp8120 diode RHRP3080
    Text: _ MCT/IGBT/DIODES 7 HYPERFAST SINGLE DIODES PAGE SELECTION G U ID E . 7-3 HYPERFAST SINGLE DIODE DATA SHEETS


    OCR Scan     		PDF RHRD440. RHRD450, RHRD460, RHRD440S, RHRD450S, RHRD460S RHRD4120, RHRD4120S RHRD640, RHRD650, diode 6A 1000v diode 400V 4A Hyperfast Diode 1200V IGBT 1000V .50A RHRP3060 400v 50A DIODE rhrp15120 rhrp860 diode rhrp8120 diode RHRP3080

    igbt 1000v 80a

    Abstract: 30A, 600v DIODE
    Text: — MCT/IGBT/DIODES — 5 ULTRAFAST SINGLE DIODES PAGE SELECTION G U ID E . 5-3 MUR810, MUR815,


    OCR Scan     		PDF MUR810, MUR815, MUR820, RURP810, RURP815, RURP820 MUR840, MUR850, MUR860, RURP840, igbt 1000v 80a 30A, 600v DIODE

    diode mur

    Abstract: 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A
    Text: [ MCT/IGBT/DIODES 5 ULTRAFAST SINGLE DIODES PAGE SELECTION GUIDE. 5-3 ULTRAFAST SINGLE DIODE DATA SHEETS 2A, 50V - 200V Ultrafast Diodes.


    OCR Scan     		PDF GE1001, GE1002, GE1003, GE1004 GE1101, GE1102, GE1103, GE1104 GE1301, GE1302, diode mur 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A

    Untitled

    Abstract: No abstract text available
    Text: — MCT/IGBT/DI0DESÎ8 HYPERFAST DUAL DIODES PAGE SELECTION G U ID E . 8-2 HYPERFAST DUAL DIODE DATA SHEETS


    OCR Scan     		PDF RHRP840CC, RHRP850CC, RHRP860CC RHRP870CC, RHRP880CC, RHRP890CC, RHRP8100CC RHRP8120CC RHRG1540CC, RHRG1550CC,

    Untitled

    Abstract: No abstract text available
    Text: CTG35P60F1 35A, 600V -Type MOS Controlled Thyristor MCT Features • 35A,-600V • VTM = -1.3V(Maximum) at I = 35A and +150°C • 800A Surge Current Capability • 800A/|.is di/dt Capability • MOS Insulated Gate Control • 50A Gate Turn-Off Capability at +150°C


    OCR Scan     		PDF CTG35P60F1 -600V

    THYRISTOR 35A 300V

    Abstract: MCT thyristor 100v
    Text: &m MCTG35P60F1 a r ia s 35A, 600V P-Type MOS Controlled Thyristor MCT A p rii 1995 Package Features J E D E C S T Y LE TO -247 • 35A, -600V • VTM = -1.3V(Maximum) at I = 35A and +150°C • BOOA Surge Current Capability • SOOA/jjs dl/dt Capability


    OCR Scan     		PDF MCTG35P60F1 -600V THYRISTOR 35A 300V MCT thyristor 100v

    Untitled

    Abstract: No abstract text available
    Text: MCTV75P60E1, i MCTA75P60E1 HARM S X Semiconductor 75A, 600V P-Type MOS Controlled Thyristor MCT p * 0 ' Cfcs S April 1999 Features Package JEDEC STYLE TO-247 5-LEAD • 75A ,-6 00V A NO DE • VTM = -1.3V(Maxim um ) at I = 75A and +150°C • 2000A Surge Current Capability


    OCR Scan     		PDF MCTV75P60E1, MCTA75P60E1 O-247 000A/| O-093AA O-218)

    Untitled

    Abstract: No abstract text available
    Text: MCTV35P60F1D CE M A R R 35A, 600V P-Type MOS Controlled Thyristor MCT with Anti-Parallel Diode M arch 1995 Package Features • 35A .-600V J E D E C S T Y L E T O -2 4 7 • VTM = -1 .35V (Max) at I = 35A and +150°C • 800A Surge Current Capability


    OCR Scan     		PDF MCTV35P60F1D -600V 800/Vns

    Untitled

    Abstract: No abstract text available
    Text: H ^ r tm ^ s • « / < S e m ico n d ucto r mm M m m T 3 5 P 6 F 1 D \ 35A, 600V P-Type MOS Controlled hyristor MCT with Anti-Parallel Diode W tH O B ^ o E S IG N S - ApriM99n V r r : ^ S S OBSOLi ! i - - — 1 Package Featuw§ • 35A ,-6 00V JEDEC STYLE TO-247


    OCR Scan     		PDF ApriM99n O-247 factor/100)

    120AG

    Abstract: V75P60E MCTA75P60E1 75P60 A75P60E1 MCT thyristor CTV7 V75P60E1
    Text: h a r r i MCTV75P60E1, MCTA75P60E1 s s e m i c o n d u c t o r 75A, 600V P-Type MOS Controlled Thyristor MCT A p ril 1995 Features • Package JE D EC STYLE TO -247 5-LEA D 75A , -6 00 V ANODE • VTM = -1 .3 V (M a x im u m ) at I = 7 5A a n d + 1 5 0 °C


    OCR Scan     		PDF MCTV75P60E1, MCTA75P60E1 120AG V75P60E MCTA75P60E1 75P60 A75P60E1 MCT thyristor CTV7 V75P60E1