MOS Controlled Thyristor
Abstract: MCT thyristor MCTV75P60E1 MA75P60E1
Text: April 1998 NS ESIG 2 D 00F NEW S E M I C O N D U C T O R OR 3D65P1 F D NDE MCT MME 100F2, O C RE 65P NOT MCT3A See MCTV75P60E1, MCTA75P60E1 75A, 600V P-Type MOS Controlled Thyristor MCT Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC
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3D65P1
100F2,
MCTV75P60E1,
MCTA75P60E1
O-247
-600V
150oC
MOS Controlled Thyristor
MCT thyristor
MCTV75P60E1
MA75P60E1
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MCT thyristor
Abstract: mct 600v MCT harris MOS Controlled Thyristor MCTV35P60F1D MCTV35P6
Text: MCTV35P60F1D Semiconductor April 1999 AWN NS 35A, 600V ITHDR DESIG PART W E - NO NEW Thyristor MCT OLET S OBS S PROCE Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC
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MCTV35P60F1D
-600V
O-247
150oC
factor/100)
MCT thyristor
mct 600v
MCT harris
MOS Controlled Thyristor
MCTV35P60F1D
MCTV35P6
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MCT thyristor
Abstract: MCTV75P60E1 MOS Controlled Thyristor MCT harris "MOS Controlled Thyristors" mct thyristor datasheet MCTA75P60E1 MCTV75P6
Text: Semiconductor IGNS WN DRA EW DES H T I TW ON PAR ETE - N L BSO SS O 75A, 600V P-Type MOS Controlled Thyristor MCT CE April 1999 PRO MCTV75P60E1, MCTA75P60E1 Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC
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MCTV75P60E1,
MCTA75P60E1
O-247
-600V
150oC
MO-093AA
O-218)
MCT thyristor
MCTV75P60E1
MOS Controlled Thyristor
MCT harris
"MOS Controlled Thyristors"
mct thyristor datasheet
MCTA75P60E1
MCTV75P6
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MOS Controlled Thyristor
Abstract: MCTA75P60E1 MCTV75P60E1
Text: MCTV75P60E1, MCTA75P60E1 S E M I C O N D U C T O R 75A, 600V P-Type MOS Controlled Thyristor MCT April 1995 Features Package JEDEC STYLE TO-247 5-LEAD • 75A, -600V ANODE • VTM = -1.3V(Maximum) at I = 75A and +150oC • 2000A Surge Current Capability
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MCTV75P60E1,
MCTA75P60E1
O-247
-600V
150oC
MO-093AA
O-218)
MOS Controlled Thyristor
MCTA75P60E1
MCTV75P60E1
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MOS Controlled Thyristor
Abstract: MCT thyristor "MOS Controlled Thyristors" 100DV MCTG35P60F1 MCTG35P6
Text: MCTG35P60F1 Semiconductor April 1999 WN IGNS ITHDRA W T R W DES A E P N O N EP-Type SOLET ESS OB PROC Features 35A, 600V MOS Controlled Thyristor MCT Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C A • 800A Surge Current Capability
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MCTG35P60F1
-600V
O-247
150oC
MOS Controlled Thyristor
MCT thyristor
"MOS Controlled Thyristors"
100DV
MCTG35P60F1
MCTG35P6
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MCT thyristor
Abstract: MOS Controlled Thyristor MCT harris mct 600v MCTV35P60F1D diode ik 60
Text: MCTV35P60F1D S E M I C O N D U C T O R 35A, 600V P-Type MOS Controlled Thyristor MCT with Anti-Parallel Diode March 1995 Features Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC • 800A Surge Current Capability A • 800A/µs di/dt Capability
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MCTV35P60F1D
-600V
O-247
150oC
factor/100)
MCT thyristor
MOS Controlled Thyristor
MCT harris
mct 600v
MCTV35P60F1D
diode ik 60
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MOS Controlled Thyristor
Abstract: MCT thyristor "MOS Controlled Thyristors" mos Turn-off Thyristor MCTG35P60F1 MCTS "mos controlled thyristor"
Text: MCTG35P60F1 S E M I C O N D U C T O R 35A, 600V P-Type MOS Controlled Thyristor MCT April 1995 Features Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C A • 800A Surge Current Capability K • 800A/µs di/dt Capability
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MCTG35P60F1
-600V
O-247
150oC
MOS Controlled Thyristor
MCT thyristor
"MOS Controlled Thyristors"
mos Turn-off Thyristor
MCTG35P60F1
MCTS
"mos controlled thyristor"
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MOS Controlled Thyristor
Abstract: mct 575 "MOS Controlled Thyristors" "mos controlled thyristor" MCT thyristor Thyristors application circuits
Text: MCTG35P60F1 S E M I C O N D U C T O R April 1998 NS DESIG W E N 2 R P100F ED FO MEND 2, MCT3D65 M O C E P-Type NOT R T3A65P100F C M e e S Features 35A, 600V MOS Controlled Thyristor MCT Package • 35A, -600V JEDEC STYLE TO-247 o • VTM = -1.3V(Maximum) at I = 35A and +150 C
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P100F
MCT3D65
T3A65P100F
MCTG35P60F1
O-247
-600V
150oC
MOS Controlled Thyristor
mct 575
"MOS Controlled Thyristors"
"mos controlled thyristor"
MCT thyristor
Thyristors application circuits
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MCT thyristor
Abstract: MCT harris 3A65P100F2 IK25 THYRISTOR 35A 300V diode ik 60
Text: MCTV35P60F1D S E M I C O N D U C T O R April 1998 S DESIGN R NEW O F 2 F D E 35A, 600V ND P10 COMME CT3D65 NOT RE 3A65P100F2, M Thyristor MCT T See MC Features P-Type MOS Controlled with Anti-Parallel Diode Package • 35A, -600V JEDEC STYLE TO-247 • VTM = -1.35V (Max) at I = 35A and +150oC
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MCTV35P60F1D
O-247
CT3D65
3A65P100F2,
-600V
150oC
factor/100)
MCT thyristor
MCT harris
3A65P100F2
IK25
THYRISTOR 35A 300V
diode ik 60
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cable
Abstract: shield cables
Text: CABLES - CAVI Index by short code | Indice per codice breve short code descriptive code data sheet short code descriptive code data sheet short code descriptive code data sheet short code descriptive code data sheet 104 107 108 111 112 124 125 134 136 137
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MN-GE91-04XA5
MN-GE91-02XA5
MN-GE91-03XA5
MN-AE71-02XAV-P
cable
shield
cables
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cables
Abstract: IEC 228, classe 6
Text: page | pagina SECTION 30 Declaration of conformity Company profile Production range 30-2 30-3 30-4 SEZIONE 30 Dichiarazione di conformità Profilo aziendale Gamma produzione SECTION 31 Advice in choosing a cable 31-2 SEZIONE 31 Suggerimenti per scegliere un cavo
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MMN-UKG5-10XC5
MN-UKG5-12XC5
MN-UKG5-14XC5
MN-UKG5-16XC5
cables
IEC 228, classe 6
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SMD Resistors, Arrays and Networks
Abstract: STR 20012 WSK 013 070 eb potentiometer vishay draloric 61 Mini Melf MMA 0204-50 a006 mosfet Micro MELF "Land Pattern" tca 4401 tuner uv 915 Schematic MINIMELF resistors
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book smd resistors, arrays and networks vishay vse-db0010-0611 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0010-0611
SMD Resistors, Arrays and Networks
STR 20012
WSK 013 070 eb
potentiometer vishay draloric 61
Mini Melf MMA 0204-50
a006 mosfet
Micro MELF "Land Pattern"
tca 4401
tuner uv 915 Schematic
MINIMELF resistors
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TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
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1N3245
1N3611GP
1N3612GP
1N3613GP
1N3614GP
1N3725
1N3957GP
1N4001GP
1N4002GP
1N4003GP
TCA780
TFK U 111 B
TFK U 4614 B
TFK S 186 P
TFK U 217 B
TFK BP w 41 n
TFK BPW 41 N
Tfk 880
TFK 148
TDSR 5150 G
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3G3DV
Abstract: No abstract text available
Text: OMRON 3G3DV Drive Series All the power you need, when and wherever you need it. » » Single drive solution that’s powerful, flexible and efficient » »S u i t a b l e fo r C a te g o r y 3 i n s t a l l a t i o n s » » o f fe rs yo u a w i d e ra n g e o f f u n c t i o n s f ro m P LC f u n c t i o n a l i ty
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I39I-E-01
3G3DV
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MQ3 circuit diagram
Abstract: MCM67Q709A MCM67Q909 MCM69C232 MCM69C432 MCM69D536 MCM69D618 tms 980 5081b
Text: MOTOROLA Order this document by MCM69C232/D SEMICONDUCTOR TECHNICAL DATA MCM69C232 Advance Information 4K x 64 CAM The MCM69C232 is a flexible content–addressable memory CAM that can contain 4096 entries of 64 bits each. The widths of the match field and the output
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MCM69C232/D
MCM69C232
MCM69C232
MQ3 circuit diagram
MCM67Q709A
MCM67Q909
MCM69C432
MCM69D536
MCM69D618
tms 980
5081b
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Difference between LS, HC, HCT devices
Abstract: ACTQ244 AC240 ACT240 ACT244 F100324 F100325 MS010160 FACT
Text: Revised November 1999 Design Considerations Today’s system designer is faced with the problem of keeping ahead when addressing system performance and reliability. Fairchild Semiconductor’s advanced CMOS helps designers achieve these goals. FACT Fairchild Advanced CMOS Technology logic was
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diode mur
Abstract: 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A
Text: [ MCT/IGBT/DIODES 5 ULTRAFAST SINGLE DIODES PAGE SELECTION GUIDE. 5-3 ULTRAFAST SINGLE DIODE DATA SHEETS 2A, 50V - 200V Ultrafast Diodes.
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GE1001,
GE1002,
GE1003,
GE1004
GE1101,
GE1102,
GE1103,
GE1104
GE1301,
GE1302,
diode mur
600V 25A Ultrafast Diode
MUR850 diode
diode 400V 4A
igbt 1000v 80a
diode 400v 2A ultrafast
igbt 200v 30a
600v 30a IGBT
30A, 600v DIODE
igbt 200V 4A
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Untitled
Abstract: No abstract text available
Text: CTG35P60F1 35A, 600V -Type MOS Controlled Thyristor MCT Features • 35A,-600V • VTM = -1.3V(Maximum) at I = 35A and +150°C • 800A Surge Current Capability • 800A/|.is di/dt Capability • MOS Insulated Gate Control • 50A Gate Turn-Off Capability at +150°C
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CTG35P60F1
-600V
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Untitled
Abstract: No abstract text available
Text: MCTV75P60E1, i MCTA75P60E1 HARM S X Semiconductor 75A, 600V P-Type MOS Controlled Thyristor MCT p * 0 ' Cfcs S April 1999 Features Package JEDEC STYLE TO-247 5-LEAD • 75A ,-6 00V A NO DE • VTM = -1.3V(Maxim um ) at I = 75A and +150°C • 2000A Surge Current Capability
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MCTV75P60E1,
MCTA75P60E1
O-247
000A/|
O-093AA
O-218)
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Untitled
Abstract: No abstract text available
Text: MCTV35P60F1D CE M A R R 35A, 600V P-Type MOS Controlled Thyristor MCT with Anti-Parallel Diode M arch 1995 Package Features • 35A .-600V J E D E C S T Y L E T O -2 4 7 • VTM = -1 .35V (Max) at I = 35A and +150°C • 800A Surge Current Capability
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MCTV35P60F1D
-600V
800/Vns
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TLP 817
Abstract: moc 641 CNY 817 TLP 621 TOSHIBA NEC ps2401 TLP766J MOTOROLA moc cny 57 moc 410 optokoppler
Text: Optokoppler Optocouplers Vergleichsliste Cross reference D iese Liste erhebt keinen A n sp ru ch auf V ollstän dig keit, im Einzelfall bitte die e n tsp re ch e n d e n D a te nb lätter ve rg le ich e n . (This list do es not cla im be in g com p le te , therefore,
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IL420
IL400
IL250
IL252
LTK-702
TLP 817
moc 641
CNY 817
TLP 621 TOSHIBA
NEC ps2401
TLP766J
MOTOROLA moc
cny 57
moc 410
optokoppler
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led 7 segment anode TIL 702
Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Text: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9
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10x10
led 7 segment anode TIL 702
trw 007 diodes
TDDG 5250 m
817 optron
telefunken transistor
opto smd code marking NEC
TDDG 5250
hoa 865
DIODE PK IN 5401
7segment sm 4150
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Untitled
Abstract: No abstract text available
Text: Directional Couplers 50 & 75Q Surface MountJ 6 to 20 dB Coupling 5 MHz to 1200MHz JDC MHz COUPLING dB MAINLINE LOSS DtRECHVflY dB cm SCDC v $ m m LRDC CARD DATA POWER INPUT, W CASE STYLE l M U L M® U Nom . H o tn e ss Typ .M a x. Typ .M a x. Typ .M a x. Ty p . Mfn. Typ .M tn . Typ .M in.
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1200MHz
SCDC-11--2
SCDC-25-2
LRDC-10-1
LRDC-20-2
LRDC-10-1-75
LRDC-10-2-75
LRDC-10-2W-75
LRDC-12-1-75
ZFDC-10-1
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e/15-16M
Abstract: No abstract text available
Text: Preliminary Information AMDÌ1 A M D - 751" System Controller Data Sheet Publication #21910 Rev:D Issue Date: August 1999 H D25 752 5 OObaOBt. b l S 1999 Advanced Micro Devices, Inc. A ll rights reserved. T he c o n te n ts of th is d o cu m en t a re p ro v id ed in co n n ectio n w ith A d v an ced
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G2575E5
21910Dâ
e/15-16M
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