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    MCR10EZPJ Price and Stock

    ROHM Semiconductor MCR10EZPJ102

    Res Thick Film 0805 1K Ohm 5% 0.125W(1/8W) ±200ppm/°C Pad SMD Automotive T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical MCR10EZPJ102 480,000 5,556
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    MCR10EZPJ102 146,057 6,411
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    MCR10EZPJ102 131,918 5,556
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    Quest Components MCR10EZPJ102 489,534
    • 1 $0.135
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    MCR10EZPJ102 2,773
    • 1 $0.28
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    • 100 $0.126
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    MCR10EZPJ102 25
    • 1 $0.14
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    ROHM Semiconductor MCR10EZPJ223

    Res Thick Film 0805 22K Ohm 5% 0.125W(1/8W) ±200ppm/°C Pad SMD T/R Automotive AEC-Q200
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    Verical MCR10EZPJ223 105,711 15,625
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    MCR10EZPJ223 45,000 8,334
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    MCR10EZPJ223 30,000 8,334
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    Arrow Electronics MCR10EZPJ223 Cut Strips 34 1
    • 1 $0.0007
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    ROHM Semiconductor MCR10EZPJ150

    Res Thick Film 0805 15 Ohm 5% 0.125W(1/8W) ±200ppm/°C Pad SMD Automotive T/R
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    Verical MCR10EZPJ150 50,000 5,556
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    MCR10EZPJ150 50,000 5,556
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    ROHM Semiconductor MCR10EZPJ360

    Res Thick Film 0805 36 Ohm 5% 0.125W(1/8W) ±200ppm/°C Pad SMD Automotive T/R
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    Verical MCR10EZPJ360 23,053 12,500
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    ROHM Semiconductor MCR10EZPJ274

    Res Thick Film 0805 270K Ohm 5% 0.125W(1/8W) ±200ppm/°C Pad SMD Automotive T/R
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    Verical MCR10EZPJ274 20,000 5,556
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    MCR10EZPJ274 10,430 5,556
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    Chip1Stop MCR10EZPJ274 Cut Tape 150
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    Find more MCR10EZPJ price and stock on Findchips.com

    MCR10EZPJ Datasheets (162)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MCR10EZPJ ROHM Thick film rectangular Original PDF
    MCR10EZPJ000 ROHM RES 0.0 OHM 1/8W 5% 0805 SMD Original PDF
    MCR10EZPJ100 ROHM RES 10 OHM 1/8W 5% 0805 SMD Original PDF
    MCR10EZPJ101 ROHM RES 100 OHM 1/8W 5% 0805 SMD Original PDF
    MCR10EZPJ102 ROHM Compact Chip Resistors; Resistance (Ω): 1000; Packing style: Paper Tape(4mm Pitch); Package quantity: 5000; Original PDF
    MCR10EZPJ103 ROHM Compact Chip Resistors; Resistance (Ω): 10000; Packing style: Paper Tape(4mm Pitch); Package quantity: 5000; Original PDF
    MCR10EZPJ104 ROHM Compact Chip Resistors; Resistance (Ω): 100000; Packing style: Paper Tape(4mm Pitch); Package quantity: 5000; Original PDF
    MCR10EZPJ105 ROHM RES 1.0M OHM 1/8W 5% 0805 SMD Original PDF
    MCR10EZPJ106 ROHM RES 10M OHM 1/8W 5% 0805 SMD Original PDF
    MCR10EZPJ110 ROHM RES 11 OHM 1/8W 5% 0805 SMD Original PDF
    MCR10EZPJ111 ROHM RES 110 OHM 1/8W 5% 0805 SMD Original PDF
    MCR10EZPJ112 ROHM RES 1.1K OHM 1/8W 5% 0805 SMD Original PDF
    MCR10EZPJ113 ROHM RES 11K OHM 1/8W 5% 0805 SMD Original PDF
    MCR10EZPJ114 ROHM RES 110K OHM 1/8W 5% 0805 SMD Original PDF
    MCR10EZPJ115 ROHM RES 1.1M OHM 1/8W 5% 0805 SMD Original PDF
    MCR10EZPJ120 ROHM Compact Chip Resistors; Resistance (Ω): 12; Packing style: Paper Tape(4mm Pitch); Package quantity: 5000; Original PDF
    MCR10EZPJ121 ROHM RES 120 OHM 1/8W 5% 0805 SMD Original PDF
    MCR10EZPJ122 ROHM RES 1.2K OHM 1/8W 5% 0805 SMD Original PDF
    MCR10EZPJ123 ROHM RES 12K OHM 1/8W 5% 0805 SMD Original PDF
    MCR10EZPJ124 ROHM RES 120K OHM 1/8W 5% 0805 SMD Original PDF
    ...

    MCR10EZPJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MCR10EZPJ Thick Film Chip Resistors MCR Series < Automotive > Features 1 Full line up from ultra small size 01005) to 2512 with jumper type. 2) High reliability metal glazed thick film. 3) ROHM resistors have obtained ISO9001/ISO/TS16949 certification.


    Original     		PDF MCR10EZPJ ISO9001/ISO/TS16949 AEC-Q200 AEC-Q200 MCR004 MCR006 MCR01 R1120A

    Untitled

    Abstract: No abstract text available
    Text: TH THS4521 THS4522 THS4524 S4 521 TH TH S4 S4 524 522 www.ti.com. SBOS458B – DECEMBER 2008 – REVISED MAY 2009


    Original     		PDF THS4521 THS4522 THS4524 SBOS458B

    mppt charge controller schematic

    Abstract: mppt Charge Controller design and circuit schematic diagram MPPT AN10936 mppt ic Solar Charge Controller mppt ic Solar Charge Controller mppt diagram MPPT CONTROLLER circuit DIAGRAM mppt BASED DC TO DC CONVERTER Solar mppt circuit design
    Text: AN10936 Photovoltaic MPPT battery charge controller using the MPT612 IC reference board Rev. 2 — 2 February 2011 Application note Document information Info Content Keywords Solar, PV, MPPT, MPT612, PWM, DC-DC converter, buck, boost, buck boost, PWM, UART, I2C-bus, GPIO, LQFP, ARM7TDMI-S, flash, SRAM,


    Original     		PDF AN10936 MPT612 MPT612, mppt charge controller schematic mppt Charge Controller design and circuit schematic diagram MPPT AN10936 mppt ic Solar Charge Controller mppt ic Solar Charge Controller mppt diagram MPPT CONTROLLER circuit DIAGRAM mppt BASED DC TO DC CONVERTER Solar mppt circuit design

    74435566

    Abstract: LLP32 RL3720WT-R008-F 2066 AN2066 LM25119 C1608C0G1H101J UMK212B7474KG Nippon capacitors
    Text: National Semiconductor Application Note 2066 Eric Lee September 28, 2010 Introduction ed to the J6 OUT2+ and J5 (OUT2-/GND). Be sure to choose the correct connector and wire size when attaching the source power supply and the load. The LM25119EVAL evaluation board provides the design engineer with a fully functional dual output buck converter, employing the LM25119 Dual Emulated Current Mode Synchronous Buck Controller. The evaluation board is designed


    Original     		PDF LM25119EVAL LM25119 AN-2066 74435566 LLP32 RL3720WT-R008-F 2066 AN2066 C1608C0G1H101J UMK212B7474KG Nippon capacitors

    GRM188R71E474KA12

    Abstract: LM5119 LLP32 RL3720WT-R010-F C1608C0G1E682J C1608C0G1H101J PowerDI323 24v to 5V 2A SW regulator grm21br72a474ka73 PMEG6010CEH
    Text: National Semiconductor Application Note 2065 Eric Lee September 28, 2010 Introduction choose the correct connector and wire size when attaching the source power supply and the load. The LM5119EVAL evaluation board provides the design engineer with a fully functional dual output buck converter, employing the LM5119 Dual Emulated Current Mode Synchronous Buck Controller. The evaluation board is designed


    Original     		PDF LM5119EVAL LM5119 AN-2065 GRM188R71E474KA12 LLP32 RL3720WT-R010-F C1608C0G1E682J C1608C0G1H101J PowerDI323 24v to 5V 2A SW regulator grm21br72a474ka73 PMEG6010CEH

    TB235

    Abstract: No abstract text available
    Text: Juune 11, 20144 T TF235 Frequenccy=30-5122 MHz Pout=100W Gain= = 19-21.5 dB Vd ds=28Vdc Id dq=1.2A Efficiency= 48-551% L LR2401 PH: 8805 484-4210 FAX:(805)48 84-3393 1110 Avenida Acasso, Camarillo CA C 93012 ww ww.polyfet.com m June 11, 2014 180.0 22.5 135.0


    Original     		PDF TF235 28Vdc LR2401 TB235 28Vdc, TCJE106M063R0100 EE-TK1V470P 100r18x335KV4E

    TB239

    Abstract: No abstract text available
    Text: Decem mber 19, 20144 T TB239 Featuriing the LY Y942 Frequen ncy=2-30M MHz Pout=400W Gaain=20dB Vd ds=50Vdc Id dq=1.0A Efficciency=66% % PH: 8805 484-4210 FAX:(805)48 84-3393 1110 Avenida Acasso, Camarillo CA C 93012 ww ww.polyfet.com m December 19, 2014 50


    Original     		PDF TB239 2-30M 50Vdc TB239 LY942, 50Vdc, BN-73-202 FT100B-43 ------------------------------------TC-24 LY942

    THS4524

    Abstract: THS4521 ADS1278 OPA2350 THS4121 THS4130 THS4520 THS4522
    Text: TH THS4521 THS4522 THS4524 S4 521 TH TH S4 S4 524 522 www.ti.com. SBOS458 – DECEMBER 2008


    Original     		PDF THS4521 THS4522 THS4524 SBOS458 THS4524 THS4521 ADS1278 OPA2350 THS4121 THS4130 THS4520 THS4522

    DIP4NS

    Abstract: BR1 400V XSTR CAP 10u 10 25V X7R 1206 hi1206t161r-10 ic bridge rectifier CAP 470N 50V X7R thermistor MF72 BSS123 NXP CGRM4007-G
    Text: 1.0 Design Specifications Inputs Output #1 VinMin=80V Vout1=LED dependant, up to 32V VinMax=135V Iout1=0.6A A bill of materials below describes the parts used on this demonstration board. A schematic and layout have also been included below along with measured performance characteristics. The above restrictions for the input voltage are valid


    Original     		PDF LM3445 CSP-9-111S2) CSP-9-111S2. RD-172 DIP4NS BR1 400V XSTR CAP 10u 10 25V X7R 1206 hi1206t161r-10 ic bridge rectifier CAP 470N 50V X7R thermistor MF72 BSS123 NXP CGRM4007-G

    MARKING SMD npn TRANSISTOR R45

    Abstract: PMSM 200kw FSBB30CH60C smd transistor marking r14
    Text: User Guide for FEBSPM3SPM45_M01MTCA Motion SPM3/45H Evaluation Board Compatible with: SPM3V2_V4 & SPM45H Modules Featured Fairchild Product: FNB41560 SPM45H SPM Direct questions or comments about this evaluation board to: “Worldwide Direct Support” /


    Original     		PDF FEBSPM3SPM45 M01MTCA SPM3/45H SPM45H FNB41560 MARKING SMD npn TRANSISTOR R45 PMSM 200kw FSBB30CH60C smd transistor marking r14

    0.1mf capacitor

    Abstract: No abstract text available
    Text: TH S THS4521 THS4522 THS4524 452 1 TH TH S4 S4 524 522 www.ti.com SBOS458E – DECEMBER 2008 – REVISED DECEMBER 2010 VERY LOW POWER, NEGATIVE RAIL INPUT, RAIL-TO-RAIL OUTPUT, FULLY DIFFERENTIAL AMPLIFIER Check for Samples: THS4521, THS4522, THS4524 FEATURES


    Original     		PDF THS4521 THS4522 THS4524 SBOS458E THS4521, THS4522, 112dBc 22-kHz 0.1mf capacitor

    Untitled

    Abstract: No abstract text available
    Text: EGN21C105I2D High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater consistency


    Original     		PDF EGN21C105I2D 14GHz 14GHz 25deg /-10MHz 45dBm

    EGN26C070I2D

    Abstract: No abstract text available
    Text: EGN26C070I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 48.8dBm typ. @ Psat High Efficiency: 70%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.6GHz Proven Reliability DESCRIPTION SEI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN26C070I2D 25deg /-10MHz EGN26C070I2D

    PCM3168

    Abstract: No abstract text available
    Text: TH S THS4521 THS4522 THS4524 452 1 TH TH S4 S4 524 522 www.ti.com SBOS458C – DECEMBER 2008 – REVISED JUNE 2010 VERY LOW POWER, NEGATIVE RAIL INPUT, RAIL-TO-RAIL OUTPUT, FULLY DIFFERENTIAL AMPLIFIER Check for Samples: THS4521, THS4522, THS4524 FEATURES


    Original     		PDF THS4521 THS4522 THS4524 SBOS458C THS4521, THS4522, 112dBc 22-kHz PCM3168

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    th4521

    Abstract: SBOS458F VOUTR19
    Text: TH S THS4521 THS4522 THS4524 452 1 TH TH S4 S4 524 522 SBOS458F – DECEMBER 2008 – REVISED SEPTEMBER 2011 www.ti.com VERY LOW POWER, NEGATIVE RAIL INPUT, RAIL-TO-RAIL OUTPUT, FULLY DIFFERENTIAL AMPLIFIER Check for Samples: THS4521, THS4522, THS4524 FEATURES


    Original     		PDF THS4521 THS4522 THS4524 SBOS458F THS4521, THS4522, 112dBc 22-kHz th4521 SBOS458F VOUTR19

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SNVA445B – August 2010 – Revised April 2013 AN-2066 LM25119 Evaluation Board 1 Introduction The LM25119EVAL evaluation board provides the design engineer with a fully functional dual output buck converter, employing the LM25119 Dual Emulated Current Mode Synchronous Buck Controller. The


    Original     		PDF SNVA445B AN-2066 LM25119 LM25119EVAL

    B4846

    Abstract: S21 Package GRM188B11H102KA01D CS3376C
    Text: EGN21C105I2D GaN-HEMT 105W High Voltage - High Power GaN-HEMT FEATURES -High Voltage Operation : VDS=50V -High Power : 50.3dBm typ. @ Psat -High Efficiency: 70%(typ.) @ Psat -Power Gain : 18dB(typ.) @ f=2.14GHz -Proven Reliability DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF 14GHz EGN21C105I2D /-10MHz 45dBm /-10MHz B4846 S21 Package GRM188B11H102KA01D CS3376C

    Untitled

    Abstract: No abstract text available
    Text: OSBDM-JM60 Users Guide Document Number: OSBDMTAPUG Rev 10.x, 9/2013 OSBDM-JM60 Users Guide, Rev. 10.x, 9/2013 2 Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1 Introduction to Open Source BDM 1.1 About the Open Source BDM


    Original     		PDF OSBDM-JM60

    electricity meters hacking

    Abstract: circuit diagram of Zigbee Based automatic meter r dc welding machine circuit diagram rohs ct 416 CON2x20 IEC1107 SCHEMATIC schematic diagram of simple electric drill trigger Analog AC Kilowatt Hour Meter schematic diagram electronic energy meter circuit diagram pcb layouts Micro SD adaptor Rogowski Coil design
    Text: MQX-Enabled MCF51EM256 SinglePhase Electricity Meter Reference Design Using the MCF51EM256, MC1322x and MMA7660FC Document Number: DRM121 Rev. 0 MQX-Enabled MCF51EM256 Single-Phase Electricity Meter Reference Design, Rev. 0 2 Freescale Semiconductor, Inc.


    Original     		PDF MCF51EM256 MCF51EM256, MC1322x MMA7660FC DRM121 electricity meters hacking circuit diagram of Zigbee Based automatic meter r dc welding machine circuit diagram rohs ct 416 CON2x20 IEC1107 SCHEMATIC schematic diagram of simple electric drill trigger Analog AC Kilowatt Hour Meter schematic diagram electronic energy meter circuit diagram pcb layouts Micro SD adaptor Rogowski Coil design

    Untitled

    Abstract: No abstract text available
    Text: EGN21C160I2D GaN-HEMT 160W High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 52.5dBm typ. @ Psat High Efficiency: 68%(typ.) @ Psat Power Gain : 18dB(typ.) @ f=2.14GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF EGN21C160I2D 14GHz 25deg /-10MHz

    GRM1882C1H100J

    Abstract: No abstract text available
    Text: SGN27C210I2D High Voltage - High Power GaN-HEMT FEATURES High Voltage Operation : VDS=50V High Power : 53.0dBm typ. @ Psat High Efficiency: 62%(typ.) @ Psat Power Gain : 16.3dB(typ.) @ f=2.655GHz Proven Reliability DESCRIPTION SEDI's GaN-HEMT offers high efficiency, ease of matching, greater


    Original     		PDF SGN27C210I2D 655GHz /-10MHz 48dBm GRM1882C1H100J

    smd transistor A006

    Abstract: No abstract text available
    Text: THS7320 www.ti.com SBOS565B – JULY 2011 – REVISED SEPTEMBER 2012 3-Channel ED Filter Video Amplifier with 4-V/V Gain Check for Samples: THS7320 FEATURES DESCRIPTION • Fabricated using the revolutionary, complementary Silicon-Germanium SiGe BiCom-3X process, the


    Original     		PDF THS7320 SBOS565B THS7320 smd transistor A006

    jm60 usb

    Abstract: osbdm-JM60 jm60 BB104 jm60 bdm connector JM60 ADC AXM-0451 MC908JB16 jm60 spi MC9S08JM60CLH
    Text: Open Source BDM-JM60 Users Guide Revised: 18 September 2009 Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc. CodeWarrior is a trademark or registered trademark of Freescale Semiconductor, Inc. in the United States and/or other countries. All other product or service names are the property of their respective owners.


    Original     		PDF BDM-JM60 MC9S08JM60 BDM-JM60 OSBDM-JM60 jm60 usb jm60 BB104 jm60 bdm connector JM60 ADC AXM-0451 MC908JB16 jm60 spi MC9S08JM60CLH