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    MCP 107-BALL 13 Search Results

    MCP 107-BALL 13 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    EVAL-ADUCM430ARDZ Analog Devices BGA Evaluation Board Visit Analog Devices Buy
    EVAL-ADUCM410QSPZ Analog Devices BGA Evaluation Board Visit Analog Devices Buy
    ADPD7000BCBZR7 Analog Devices 36-Ball Wafer Level Chip Scale Visit Analog Devices Buy
    ADSP-BF524KBCZ-4C2 Analog Devices 12x12/289 BGA WITH CODEC Visit Analog Devices Buy
    ADSP-BF526KBCZ-4C2 Analog Devices 12x12/289 BGA WITH CODEC Visit Analog Devices Buy
    AD8152JBPZ Analog Devices BGA 3.2Gbps 34x34 Digital Cros Visit Analog Devices Buy

    MCP 107-BALL 13 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S30ML01GP

    Abstract: S30ML512P S29PL127N S29PL-N S30ML-P S75PL127NBF S75PL-N S30ML01 tray matrix bga
    Text: S75PL-N MirrorBit ORNAND™ MCPs Stacked Multi-Chip Product MCP S29PL-N: CMOS 3.0 Volt-only Simultaneous Read/Write, Page-mode Flash Memory (NOR Interface) S30ML-P: ORNAND Flash (NAND Interface) 3V pSRAM S75PL-N MirrorBit™ ORNAND™ MCPs Cover Sheet


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    PDF S75PL-N S29PL-N: S30ML-P: S30ML01GP S30ML512P S29PL127N S29PL-N S30ML-P S75PL127NBF S30ML01 tray matrix bga

    K9F2G08U0C

    Abstract: K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0
    Text: Product Selection Guide Samsung Semiconductor, Inc. Memory & Storage 2H 2010 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


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    PDF BR-10-ALL-001 K9F2G08U0C K9K8G08U0D K9ABG08U0A K4X2G323PC K9F4G08U0B-PCB0 K9F1G08U0C K9F2G08U0B K9F2G08U0B-PCB0 K9F1G08U0D-SCB0 K9WBG08U1M-PIB0

    CDA 194

    Abstract: jedec mo-142 footprint jedec ms-024 D2863-77 leadframe C7025 ALJ- 1300 footprint WSON leadframe Cu C7025 MO-052 MO-108
    Text: ‹ Chapter 2 Package Design CHAPTER 2 PACKAGE DESIGN Flammability Rating Oxygen Index Fine-Pitch Ball Grid Array Leadframe Packages Packages and Packing Methodologies Handbook 17 Oct 2008 2-1 ‹ Chapter 2 Package Design FLAMMABILITY RATING The UL Rating for all Spansion products is 94 V-0.


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    PDF D2863-77, CDA 194 jedec mo-142 footprint jedec ms-024 D2863-77 leadframe C7025 ALJ- 1300 footprint WSON leadframe Cu C7025 MO-052 MO-108

    fcBGA PACKAGE thermal resistance

    Abstract: 409-ball CERAMIC PIN GRID ARRAY wire lead frame lead frame pin grid array 30-PIN TSOP 48 stacked flash bonding TSOP 48 thermal resistance Sharp Packages SSOP MM1248 ebga 304
    Text: IC PACKAGE FUJITSU MICROELECTRONICS LIMITED Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0722, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3387 http://jp.fujitsu.com/fml/en/ For further information please contact: North and South America


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    PDF

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


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    PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    U2.8

    Abstract: MICRON mcp ARM720T EDB7312 EP7211 EP7311 U283 63D18 U29-6 13005 m8
    Text: EP7311 Data Sheet FEATURES High-Performance, Low-Power System on Chip with SDRAM and Enhanced Digital Audio Interface • ARM720T Processor — ARM7TDMI CPU — 8 KB of four-way set-associative cache — MMU with 64-entry TLB — Thumb code support enabled


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    PDF EP7311 ARM720T 64-entry DS506PP1 EP7311 EP7312 U2.8 MICRON mcp EDB7312 EP7211 U283 63D18 U29-6 13005 m8

    JESD21-C

    Abstract: E8870DH JESD79 mrf 245 E8870 JESD-21C 567-Ball
    Text: Intel 82870DH DDR Memory Hub DMH Datasheet Product Features • ■ ■ ■ ■ Two independent DDR DIMM channels per DMH. — 4 DIMMs per DDR Channel. — Registered PC1600 DDR DIMMs. Write Buffers to minimize large turnaround times. Pass through architecture for Read and


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    PDF 82870DH PC1600 Tunnels88 E8870DH JESD21-C JESD79 mrf 245 E8870 JESD-21C 567-Ball

    Untitled

    Abstract: No abstract text available
    Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static


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    PDF S71PL254/127/064/032J 256M/128/64/32 16/8/4/2M 16-bit) 4M/2M/1M/512K/256K S71PL

    sandisk micro sd card pin

    Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
    Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM


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    PDF L-11002-01 L-11003-0I sandisk micro sd card pin MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi

    RAS 0510

    Abstract: NAND98R3M0 NAND99R NAND99W3M1 Numonyx MCP nand98 SDR256 NAND98W NAND98W3M0 NAND98R
    Text: NANDxxxxMx 256/512-Mbit or 1-Gbit x8/x16, 1.8/2.6 V, 528-byte page NAND flash and 256/512-Mbit (x16/x32, 1.8 V) LPSDRAM, MCP or PoP Features n n n Packages – MCP (multichip package) – PoP (package on package) Device composition – 1 die of 256 or 512 Mbits or 1 Gbit (x8/x16)


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    PDF 256/512-Mbit x8/x16, 528-byte 256/512-Mbit x16/x32, x8/x16) TFBGA107 TFBGA149 TFBGA137 LFBGA137 RAS 0510 NAND98R3M0 NAND99R NAND99W3M1 Numonyx MCP nand98 SDR256 NAND98W NAND98W3M0 NAND98R

    smartphone MOTHERBOARD CIRCUIT diagram

    Abstract: AP-DOC-070 Micron 512MB nand FLASH mcp J9 G3 MARKING G3 MICRON mcp QUALCOMM Reference manual A0-A21 DM270 Flash MCp nand DRAM 107-ball
    Text: DiskOnChip-Based MCP Including DiskOnChip G3 and PSRAM Data Sheet, July 2004 Highlights DiskOnChip-based MCP Multi-Chip Package is a complete memory solution. Efficiently packed in a small Fine-Pitch Ball Grid Array (FBGA) package, it is ideal for data and code


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    PDF 02-DT-0704-00 smartphone MOTHERBOARD CIRCUIT diagram AP-DOC-070 Micron 512MB nand FLASH mcp J9 G3 MARKING G3 MICRON mcp QUALCOMM Reference manual A0-A21 DM270 Flash MCp nand DRAM 107-ball

    S29PL127J

    Abstract: S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80 MCP51
    Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static


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    PDF S71PL254/127/064/032J 256M/128/64/32 16/8/4/2M 16-bit) 4M/2M/1M/512K/256K S71PL S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80 MCP51

    NAND98W3M0

    Abstract: NAND98R3M0 NAND99R NAND98R
    Text: NANDxxxxMx 256/512-Mbit or 1-Gbit x8/x16, 1.8/2.6 V, 528-byte page NAND flash and 256/512-Mbit (x16/x32, 1.8 V) LPSDRAM, MCP or PoP Features Packages – MCP (multichip package) – PoP (package on package) • Device composition – 1 die of 256 or 512 Mbits or 1 Gbit (x8/x16)


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    PDF 256/512-Mbit x8/x16, 528-byte 256/512-Mbit x16/x32, x8/x16) TFBGA107 TFBGA149 TFBGA137 TFBGA152 NAND98W3M0 NAND98R3M0 NAND99R NAND98R

    MT29C4G48MAZAPAKQ-5

    Abstract: MT29C4G96MAZAPCJG-5 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,


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    PDF 168-Ball MT29C4G48MAYAPAKQ-5 MT29C4G48MAZAPAKQ-5 MT29C4G48MAZAPAKQ-6 MT29C4G96MAZAPCJG-5 MT29C4G96MAZAPCJG-6 MT29C8G96MAZAPDJV-5 MT29C8G96MAZAPDJV-6 09005aef83ba4387 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package

    lcd N7

    Abstract: ARM720T EDB7312 EP7211 EP7309 EP7311 Keyboard scanner
    Text: EP7311 Data Sheet FEATURES High-performance, Low-power, System-on-chip with SDRAM & Enhanced Digital Audio Interface • ARM720T Processor — ARM7TDMI CPU — 8 KB of four-way set-associative cache — MMU with 64-entry TLB — Thumb code support enabled


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    PDF EP7311 ARM720T 64-entry ARM720T DS506F1 EP7311 lcd N7 EDB7312 EP7211 EP7309 Keyboard scanner

    D15-D16

    Abstract: EP7311M-IBZ
    Text: EP7311 Data Sheet FEATURES High-performance, Low-power, System-on-chip with SDRAM & Enhanced Digital Audio Interface ARM720T Processor — ARM7TDMI CPU — 8 KB of four-way set-associative cache — MMU with 64-entry TLB — Thumb code support enabled Ultra low power


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    PDF EP7311 ARM720T 64-entry 32-bit 128-bit DS506F2 D15-D16 EP7311M-IBZ

    Untitled

    Abstract: No abstract text available
    Text: EP7311 Data Sheet FEATURES High-performance, Low-power, System-on-chip with SDRAM & Enhanced Digital Audio Interface ARM720T Processor — ARM7TDMI CPU — 8 KB of four-way set-associative cache — MMU with 64-entry TLB — Thumb code support enabled Ultra low power


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    PDF EP7311 ARM720T 64-entry ARM720T DS506F2

    MT29F4G08ABA

    Abstract: MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96
    Text: Preliminary‡ Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,


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    PDF 168-Ball MT29C4G48MAYAPAKQ-5 MT29C4G48MAZAPAKQ-5 MT29C4G48MAZAPAKQ-6 MT29C4G96MAZAPCJG-5 MT29C4G96MAZAPCJG-6 MT29C8G96MAZAPDJV-5 MT29C8G96MAZAPDJV-6 09005aef83ba4387 MT29F4G08ABA MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96

    led flasher traffic

    Abstract: n100 PHILIPS SEMICONDUCTOR 50 led flasher circuit with pdf format ARM700 FM STEREO CODER Force MCP lcd N7 Siren Sound Generator 9 sound n20f n41f
    Text: EP7211 Preliminary Data Sheet FEATURES High-Performance Ultra-LowPower System-on-Chip with LCD Controller • Dynamically programmable clock speeds of 18, 36, 49, and 74 MHz at 2.5 V ■ Performance matching 100-MHz Intel Pentium-based PC ■ Socket and register compatible with CL-PS7111


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    PDF EP7211 100-MHz CL-PS7111 EP7211 DS352PP1 led flasher traffic n100 PHILIPS SEMICONDUCTOR 50 led flasher circuit with pdf format ARM700 FM STEREO CODER Force MCP lcd N7 Siren Sound Generator 9 sound n20f n41f

    n20f

    Abstract: Siren Sound Generator 5 sound n057 B n157 ARM720T CL-PS6700 CL-PS7111 EP7211 UCB1100 UCB1200
    Text: EP7211 Preliminary Data Sheet FEATURES • Dynamically programmable clock speeds of High-Performance Ultra-LowPower System-on-Chip with LCD Controller 18, 36, 49, and 74 MHz at 2.5 V ■ Performance matching 100-MHz Intel Pentium-based PC ■ Socket and register compatible with CL-PS7111


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    PDF EP7211 100-MHz CL-PS7111 EP7211 DS352PP3 n20f Siren Sound Generator 5 sound n057 B n157 ARM720T CL-PS6700 CL-PS7111 UCB1100 UCB1200

    MT29F4G08ABA

    Abstract: MT29C4G48 ELPIDA LPDDR2 POP MT29C4G48MAZBAAKQ-5
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAPŒ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,


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    PDF 168-Ball MT29C4G48MAYBAAKQ-5 MT29C4G48MAZBAAKQ-5 MT29C4G96MAYBACJG-5 MT29C4G96MAZBACJG-5 MT29C8G96MAYBADJV-5 MT29C8G96MAZBADJV-5 MT29F4G08ABA MT29C4G48 ELPIDA LPDDR2 POP

    ict prc w4

    Abstract: ict prc b9 ICT PRC A8 ARM720T EDB7312 EP7211 EP7311 Cirrus Logic Maverick
    Text: EP7311 Data Sheet FEATURES High-Performance, Low-Power System on Chip with SDRAM and Enhanced Digital Audio Interface • ARM720T Processor — ARM7TDMI CPU — 8 KB of four-way set-associative cache — MMU with 64-entry TLB — Thumb code support enabled


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    PDF EP7311 ARM720T 64-entry DS506PP1 ict prc w4 ict prc b9 ICT PRC A8 EDB7312 EP7211 Cirrus Logic Maverick

    MT29F4G08ABA

    Abstract: MT29F4G08A MT29F8G08A MT29F4G08AB MT29F4G08ABAD MT29C MT29F16G08A Micron MT29F8G08
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,


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    PDF 168-Ball MT29C4G48MAYBAAKQ-5 MT29C4G48MAZBAAKQ-5 MT29C4G96MAYBACJG-5 MT29C4G96MAZBACJG-5 MT29C8G96MAYBADJV-5 MT29C8G96MAZBADJV-5 MT29F4G08ABA MT29F4G08A MT29F8G08A MT29F4G08AB MT29F4G08ABAD MT29C MT29F16G08A Micron MT29F8G08

    maa 503

    Abstract: MPC 428 mpc 7 100J ntc 5 om d21 motorola mpc 555 transistor 33166 t AD14 MPC107 MPC107UM MPC8240
    Text: fify MOTOROLA s Order Number: MPC107EC/D Rev. 0,12/1999 Semiconductor Products Sector Advance Information MPC107 Bridge/Memory Controller Hardware Specifications This document provides an overview of the MPC107 PCI bridge/memory controller (PCIB/MC for highperformance embedded systems. The MPC107 is a cost-effective, general-purpose PCI bridge/memory


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    PDF MPC107EC/D MPC107 MPC107. maa 503 MPC 428 mpc 7 100J ntc 5 om d21 motorola mpc 555 transistor 33166 t AD14 MPC107UM MPC8240