ZX85-12G-S
Abstract: 30 pha 20 PHA-1 AN-60-042 TB-313 amplifier mini-circuits MCL 321 TB313
Text: Technical Note TD-SCDMA Performance vs. Output Power Model: PHA-1+ AN-60-042 TD-SCDMA Base Station MMIC Amplifier Mini-Circuits PHA-1+ Ultra High Dynamic Range MMIC Amplifier is designed specifically for applications which require extremely linear performance, particularly
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AN-60-042
42EVM-Peak
Settings\MCL\Desktop\TED\AN-60-042
ZX85-12G-S
30 pha 20
PHA-1
AN-60-042
TB-313
amplifier mini-circuits
MCL 321
TB313
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MCL 044 splitter
Abstract: QCN-45 mcl 1603 MCL B 306 MCL f 303
Text: Ultra-Small Ceramic Power Splitter/Combiner 2 Way-90° 50Ω QCN-45+ 2500 to 4500 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Power Input as a splitter 15W* max. *derate linearly to 7W at 100°C ambient.
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Way-90°
QCN-45+
FV1206-1
QCN-45D+
TB-405
PL-250)
MCL 044 splitter
QCN-45
mcl 1603
MCL B 306
MCL f 303
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Untitled
Abstract: No abstract text available
Text: High Power Bi-Directional Coupler BDCN-10-25+ 50Ω 10dB Coupling 824 to 2525 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Permanent damage may occur if any of these limits are exceeded. Pin Connections
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BDCN-10-25+
FV1206-1
2002/95/EC)
M119986
EDR-8041/2
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Untitled
Abstract: No abstract text available
Text: High Power Bi-Directional Coupler BDCN-10-25+ 50Ω 10dB Coupling 824 to 2525 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Pin Connections INPUT 1 OUTPUT 4 COUPLED forward 6 COUPLED (reverse) 3 GROUND
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BDCN-10-25+
FV1206-1
2002/95/EC)
RO4350B
M107415
EDR-8041/2
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TB 2926
Abstract: No abstract text available
Text: High Power Bi-Directional Coupler BDCN-7-25+ 50Ω 7dB Coupling 824 to 2525 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Pin Connections INPUT 1 OUTPUT 4 COUPLED forward 6 COUPLED (reverse) 3 GROUND
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BDCN-7-25+
FV1206-1
2002/95/EC)
RO4350B
M107415
EDR-8041/1
TB 2926
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BDCN-10-25
Abstract: FV1206-1
Text: High Power Bi-Directional Coupler BDCN-10-25+ 50Ω 10dB Coupling 824 to 2525 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Permanent damage may occur if any of these limits are exceeded. Pin Connections
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BDCN-10-25+
2002/95/EC)
FV1206-1
M123210
EDR-8041/2
BDCN-10-25
FV1206-1
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BDCN-10-25
Abstract: FV1206-1
Text: High Power Bi-Directional Coupler BDCN-10-25+ 50Ω 10dB Coupling 824 to 2525 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Permanent damage may occur if any of these limits are exceeded. Pin Connections
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BDCN-10-25+
2002/95/EC)
M123210
EDR-8041/2
BDCN-10-25
FV1206-1
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BDCN-10-25
Abstract: FV1206-1
Text: High Power Bi-Directional Coupler BDCN-10-25+ 50Ω 10dB Coupling 824 to 2525 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Permanent damage may occur if any of these limits are exceeded. Pin Connections
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BDCN-10-25+
2002/95/EC)
FV1206-1
M123210
EDR-8041/2
BDCN-10-25
FV1206-1
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ladt2
Abstract: ks 0550 TB42 MCL T1-1 MCL ADT1-6T ladt4 LT4 H4 MCL T1-1t T4-6T-KK81 CD637
Text: This page intentionally left blank, to allow for the correct viewing of continuous facing pages. RF TRANSFORMERS W 12.5 to 1250 Ω IDEBAND 10 kHz to 1400 MHz SURFACE MOUNT ADT JTX TCM Ω RATIO MODEL NO. A* T-KK81 FREQUENCY MHz Note D unl ADT1-1WT* ul ADT1-6T*
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T-KK81
CD542
CD637
ADT2-14
TB-41
TB-40
FTB1-1-75
ladt2
ks 0550
TB42
MCL T1-1
MCL ADT1-6T
ladt4
LT4 H4
MCL T1-1t
T4-6T-KK81
CD637
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PL-162
Abstract: ISO 1302 MCL 1 042 FV1206-1 TCN4-22 PL162
Text: Ceramic TCN4-22+ TCN4-22 RF Transformer 50Ω 1200 to 2200 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Input RF Power* • • • • • • 5W *From 85°C derate linearly to 2.5 W at 100°C
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TCN4-22+
TCN4-22
FV1206-1
2002/95/EC)
TB-298
PL-162)
M103134
ED-11659/1
PL-162
ISO 1302
MCL 1 042
FV1206-1
TCN4-22
PL162
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Untitled
Abstract: No abstract text available
Text: Ceramic RF Transformer 50Ω TCN4-22+ TCN4-22 New! 1200 to 2200 MHz Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Input RF Power* Features • • • • • • 5W *From 85°C derate linearly to 2.5 W at 100°C
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TCN4-22+
TCN4-22
FV1206-1
2002/95/EC)
TB-298
PL-162)
M103134
TCN4-22
ED-11659/1
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Untitled
Abstract: No abstract text available
Text: Ceramic New! RF Transformer 50Ω TCN3-11+ TCN3-11 600 to 1100 MHz Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Input RF Power* W 5W Features • • • • *derate linearly to 2.5 W at 100°C wideband, 600 to 1100 MHz
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TCN3-11+
TCN3-11
FV1206-1
2002/95/EC)
TB-287
PL-163)
TCN3-11
M101913
ED-11687/4
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Untitled
Abstract: No abstract text available
Text: Ceramic New! RF Transformer 50Ω TCN1-23+ TCN1-23 1300 to 2300 MHz Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Input RF Power* Features • • • • 5W *From 85°C derate linearly to 2.5 W at 100°C CASE STYLE: FV1206-1
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TCN1-23+
TCN1-23
FV1206-1
2002/95/EC)
TB-287
PL-163)
TCN1-23
M101913
ED-11687/2
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Untitled
Abstract: No abstract text available
Text: Ceramic TCN4-22+ TCN4-22 RF Transformer 50Ω 1200 to 2200 MHz Features Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Input RF Power* 5W *From 85°C derate linearly to 2.5 W at 100°C Pin Connections PRIMARY DOT
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TCN4-22+
TCN4-22
FV1206-1
2002/95/EC)
TB-298
PL-162)
M103134
TCN4-22
ED-11659/1
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080114
Abstract: FV1206-1 TCN4-22
Text: Ceramic Balun TCN4-22+ TCN4-22 RF Transformer 50Ω 1200 to 2200 MHz Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Input RF Power* 5W *From 85°C derate linearly to 2.5 W at 100°C Pin Connections PRIMARY DOT
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TCN4-22+
TCN4-22
FV1206-1
2002/95/EC)
TB-298
PL-162)
M102713
ED-11659/1
080114
FV1206-1
TCN4-22
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Untitled
Abstract: No abstract text available
Text: Ceramic Balun TCN4-22+ TCN4-22 RF Transformer 50Ω 1200 to 2200 MHz Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Input RF Power* 5W *From 85°C derate linearly to 2.5 W at 100°C Pin Connections PRIMARY DOT
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TCN4-22+
TCN4-22
FV1206-1
2002/95/EC)
TB-298
PL-162)
M102713
TCN4-22
ED-11659/1
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FV1206-1
Abstract: TCN1-10
Text: Ceramic RF Transformer 50Ω TCN1-10+ TCN1-10 New! 680 to 1050 MHz Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Input RF Power* Features • • • • 5W * derate linearly to 2.5 W at 100°C wideband, 680 to 1050 MHz
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TCN1-10+
TCN1-10
FV1206-1
2002/95/EC)
M101913
ED-11687/1
FV1206-1
TCN1-10
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M1019
Abstract: FV1206-1 TCN4-13
Text: Ceramic RF Transformer 50Ω TCN4-13+ TCN4-13 New! 650 to 1250 MHz Maximum Ratings Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Input RF Power Features • • • • 5W* *From 85°C derate linearly to 2.5 W at 100°C CASE STYLE: FV1206-1
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TCN4-13+
TCN4-13
FV1206-1
2002/95/EC)
M101913
ED-11687/5
M1019
FV1206-1
TCN4-13
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Untitled
Abstract: No abstract text available
Text: Ceramic TCN1-10+ TCN1-10 RF Transformer 50Ω 680 to 1050 MHz Maximum Ratings Features Operating Temperature -55°C to 100°C Storage Temperature -55°C to 100°C Input RF Power* • • • • 5W * derate linearly to 2.5 W at 100°C CASE STYLE: FV1206-1
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TCN1-10+
TCN1-10
FV1206-1
2002/95/EC)
TCN1-10
TB-287
PL-163)
M101913
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TENTATIVE TC55YD1873YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 262,144-WORD BY 72-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1873YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory
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TC55YD1873YB-333
144-WORD
72-BIT
TC55YD1873YB
368-bit
C-BGA209-1422-1
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC55YD1873YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 262,144-WORD BY 72-BIT SYNCHRONOUS STATIC RAM SILICON GATE CMOS SigmaRAM, 21x1 Dp DESCRIPTION The TC55YD1873YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory
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TC55YD1873YB-333
144-WORD
72-BIT
TC55YD1873YB
368-bit
C-BGA209-1422-1
15lsl
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TDA7056B application
Abstract: TDA7056B TDA7056b application note 2000 W BTL POWER AMPLIFIER CIRCUIT DIAGRAM sot110be
Text: Philips Sem iconductors O bjective specification 5 W mono BTL audio amplifier with DC volume control TDA7056B FEATURES GENERAL DESCRIPTION • DC volume control The TDA7056B is a mono BTL output amplifier with DC volume control. It is designed for use in TV and monitors,
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TDA7056B
TDA7056B
711002b
TDA7056B application
TDA7056b application note
2000 W BTL POWER AMPLIFIER CIRCUIT DIAGRAM
sot110be
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MCL 1 034
Abstract: TC55YD1873YB-333
Text: TOSHIBA TENTATIVE TC55YD1873YB-333,-250 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT 2 6 2 ,1 4 4 - W O R D BY 72-B IT S Y N C H R O N O U S STATIC R A M SILICON GATE CMOS S ig m a R A M , 21 x1 D p DESCRIPTION The TC55YD1873YB is a 18,874,368-bit synchronous I/O common Sigma SDR static random access memory
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TC55YD1873YB-333
144-WORD
72-BIT
TC55YD1873YB
368-bit
C-BGA209-1422-1
MCL 1 034
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ITE 8572
Abstract: 73X BLACK MARKING bu 3150 af SMAD16 SMA marking code LG sno 357 fl29 ll87 ad t004 uu215
Text: tape and reel packaging for surface mount devices Design-For-Assembly DFA a nd Design-ForM anufacture (DFM) stand tall alongside CAD /C AM in the quest to optimize profit ability, production e fficie n cy a nd equipm ent operating usage. A utom ation of surface-m ount assembly
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13-inch
ITE 8572
73X BLACK MARKING
bu 3150 af
SMAD16
SMA marking code LG
sno 357
fl29
ll87
ad t004
uu215
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