MCH3314
Abstract: SCH2805
Text: SCH2805 Ordering number : ENN7760 SCH2805 Features MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105)
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SCH2805
ENN7760
MCH3314)
SB0105)
MCH3314
SCH2805
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Untitled
Abstract: No abstract text available
Text: SCH2805 SCH2805 Features Ordering number : ENN7760 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105)
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SCH2805
ENN7760
MCH3314)
SB0105)
SCH2805/D
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MCH3314
Abstract: D1004
Text: MCH3314 Ordering number : ENN8018 P-Channel Silicon MOSFET MCH3314 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol
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MCH3314
ENN8018
900mm2
MCH3314
D1004
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MCH3314
Abstract: MCH5805 SB01-05
Text: Ordering number : ENN7125 MCH5805 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode MCH5805 DC / DC Converter Applications Package Dimensions unit : mm 2195 0.25 [MCH5805] 0.15 0.3 5 3 2 0.65 1 0.07 1.6 4 0.25 Composite type with a P-channel sillicon MOSFET
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ENN7125
MCH5805
MCH5805]
MCH3314)
SB01-05)
MCH3314
MCH5805
SB01-05
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on line ups circuit diagrams
Abstract: 2SK3850 242M SSFP package K3492 3ln03 MCH3435 CPH5612 three phase on line ups circuit diagrams TN6R04
Text: Ordering number: EP51E MOSFET Series '05-05 TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Telephone: 81- 0 3-3837-6339, 6340, 6342, Facsimile: 81-(0)3-3837-6377 ●SANYO Electric Co.,Ltd. Semiconductor company Homepage URL: http://www.semic.sanyo.co.jp/index_e.htm
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EP51E
CPH6605
MCH6613
ECH8609
CPH3424
CPH3427
K3614
FW343
FW356
FW360
on line ups circuit diagrams
2SK3850
242M
SSFP package
K3492
3ln03
MCH3435
CPH5612
three phase on line ups circuit diagrams
TN6R04
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MCH3314
Abstract: MCH5805 SB01 TA-3399
Text: 注文コード No. N 7 1 2 5 MCH5805 三洋半導体データシート N MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード MCH5805 特長 DC / DC コンバータ用 ・P チャネル MOS 形電界効果トランジスタ
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MCH5805
MCH3314
SB01-05
900mm2
ID00261
ID00260
IT03952
ID00263
MCH3314
MCH5805
SB01
TA-3399
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MCH3314
Abstract: SCH2805
Text: SCH2805 注文コード No. N 7 7 6 0 三洋半導体データシート N SCH2805 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード 汎用スイッチングデバイス 特長 ・P チャネル MOS 形電界効果トランジスタ
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SCH2805
MCH3314
SB0105
900mm2
TB-00000117
ID00261
ID00260
IT03952
MCH3314
SCH2805
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