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    relay srd

    Abstract: No abstract text available
    Text: MCE TECHNOLOGIES Products that make a world of difference MCE Technologies, Inc. is a world leader in the design, manufacture and marketing of microwave and RF devices, components and subsystems for wireless applications including cellular/ mobile GSM, WCDMA and CDMA2000 base stations, satellite, wireless


    Original     		PDF CDMA2000 relay srd

    MGV-125-20

    Abstract: MA46470 MCE Metelics MCE Metelics MGV-100-20 MGV-125-22 MGV125-22
    Text: 975 Stewart Drive • Sunnyvale, CA 94085 • www.metelics.com PH 408.737.8181 • FX 408.733.7645 • sales@metelics.com Copyright 2002 MCE Metelics. All rights reserved. Specifications subject to change without notice. Revision date 1.24.05 aAs H GaAs Hyperabrupt Tuning Varactors


    Original     		PDF

    MMD820-C12

    Abstract: MMD805 MMD-810 MCE Metelics MMD-820-C12 MMD835-C1 MMD-805-C12 MMD-840-C12 step recovery diodes comb generator
    Text: C12 17 [.432] 13 [.330] Top contact is Anode except for MSS20,000 and MSS39,000 series diodes > 2 [0.051] 17 [.432] 13 [.330] Top Contact Dimensions in mils [mm] Back Contact MCE / Metelics Corporation, 975 Stewart Drive, Sunnyvale, California 94086, 408-737-8181, Fax: 408-733-7645


    Original     		PDF MSS20 MSS39 MMD820-C12 MMD805 MMD-810 MCE Metelics MMD-820-C12 MMD835-C1 MMD-805-C12 MMD-840-C12 step recovery diodes comb generator

    MGM-801

    Abstract: MCE Metelics
    Text: MGM-801 GAIN MODULE FEATURES • • • • Full 2–4 GHz Frequency Range 10.5 dB Gain Surface Mount Package: 0.500" x 0.330" x 0.085" Single Bias Supply Voltage APPLICATIONS DC • Lo Buffer/Distribution amplifier • Broadband, wide dynamic range IF amplifier


    Original     		PDF MGM-801 MGM-801 MCE Metelics

    MGV-100-20

    Abstract: MGV-125-20 MGV-125-22 MGV-125-25 MGV-100-21 MGV-075-10 MCE Metelics MGV-100-20 MGV-100-23 MA46471 MA46472
    Text: GaAs Hyperabrupt Tuning Varactors FEATURES PACKAGE STYLES • Constant Gamma 0.75, 1.00, or 1.25 over a wide tuning ratio • High Q • Linear Frequency Tuning • Stable performance in High Reliability environment • Available in Packaged and Chip Form


    Original     		PDF MGV-075 MGV-100 MGV-125 MGV-100-20 MGV-125-20 MGV-125-22 MGV-125-25 MGV-100-21 MGV-075-10 MCE Metelics MGV-100-20 MGV-100-23 MA46471 MA46472

    77505

    Abstract: 2310 fx MMA710-SOT89TR 75558 TRANSISTOR 6822 MMA710-SOT89 2944 3443 SOT-89 1000DB MMA710
    Text: MMA710-SOT89 Darlington HBT Amplifier FEATURES G • 100 KHz to 4 GHz Bandwidth • +21 dBm Output Power at P-1dB Compression • +35 dBm Third Order Intercept MMA 710 The MMA710 is a packaged InGaP Heterojunction Bipolar Transistor HBT Darlington amplifier in a low cost SOT-89 surface mount


    Original     		PDF MMA710-SOT89 MMA710 OT-89 MMA710-SOT89TR MMA710-SOT89EB 77505 2310 fx MMA710-SOT89TR 75558 TRANSISTOR 6822 MMA710-SOT89 2944 3443 SOT-89 1000DB

    MMA701-SOT89

    Abstract: MCE Metelics
    Text: MMA701-SOT89 Load Pull Frequency in MHz Vce=5.00V Freq. Mag Angle 824 837 849 869 881 894 910 930 960 1710 1740 1770 1790 1820 1850 1910 1930 1960 1990 2110 2140 2170 2400 2450 2500 2600 2700 0.199 0.192 0.191 0.221 0.201 0.177 0.211 0.223 0.231 0.171 0.211


    Original     		PDF MMA701-SOT89 MCE Metelics

    MMA60

    Abstract: 8 mu 0833 MCE Metelics
    Text: MMA601 High Linearity HBT Die FEATURES • • • • + 44 dBm IP3 at 2.1 GHz + 26 dBm Output Power at P-1dB Compression 50% Power added efficiency typical 100 MHz to 5000 MHz Operation The MMA601 is an InGaP Heterojunction Bipolar Transistor (HBT) provided


    Original     		PDF MMA601 MMA601 44dBm MMA60 8 mu 0833 MCE Metelics

    330105

    Abstract: 143-754 metelics 2598 85890 121-270 544 mmic MMA602 462501 97346 550538
    Text: MMA602 Darlington HBT Die FEATURES • 100 KHz to 5 GHz Bandwidth • +21 dBm Output Power at P-1dB Compression • +35 dBm Third Order Intercept The MMA602 is a MMIC InGaP Heterojunction Bipolar Transistor HBT Darlington amplifier provided in die form. The amplifier


    Original     		PDF MMA602 MMA602 P-974279E-01 046998E-01 059359E-01 053424E-01 004735E-01 996801E-01 057717E-01 330105 143-754 metelics 2598 85890 121-270 544 mmic 462501 97346 550538

    PH 0852

    Abstract: 40530 transistor
    Text: MMA701-SOT89 High Linearity Packaged HBT FEATURES • • • • G +45 dBm IP3 at 2.1 GHz +25 dBm Output Power at P-1dB Compression 50% Power added efficiency typical 100 MHz to 4000 MHz Operation MMA 701 The MMA701 is an InGaP Heterojunction Bipolar Transistor (HBT)


    Original     		PDF MMA701-SOT89 MMA701 OT-89 MMA701 MMA701-SOT89TR MMA701-SOT89EB, PH 0852 40530 transistor

    amplifier diagram

    Abstract: No abstract text available
    Text: MMA612 DC to 12 GHz Amplifier FEATURES: • DC - 12 GHz Broadband Gain Block. • Flat gain over bandwidth +/- 1 dB. • 50 Ohm match Input/Output DESCRIPTION: The MMA612 is a fully matched Darlington Amplifier Die, constructed with reliable InGaP-GaAs HBT technology.


    Original     		PDF MMA612 amplifier diagram

    40530 transistor

    Abstract: MMA701-SOT89TR 7905 sot89 MMA 7815 MMA701 MMA701-SOT89 AN 7591 POWER AMPLIFIER PH 0852 7814 transistor AN 7591
    Text: MMA701-SOT89 High Linearity Packaged HBT FEATURES • • • • G +45 dBm IP3 at 2.1 GHz +25 dBm Output Power at P-1dB Compression 50% Power added efficiency typical 100 MHz to 4000 MHz Operation MMA 701 The MMA701 is an InGaP Heterojunction Bipolar Transistor (HBT)


    Original     		PDF MMA701-SOT89 MMA701 OT-89 MMA701 MMA701-SOT89TR MMA701-SOT89EB, 40530 transistor MMA701-SOT89TR 7905 sot89 MMA 7815 MMA701-SOT89 AN 7591 POWER AMPLIFIER PH 0852 7814 transistor AN 7591

    Untitled

    Abstract: No abstract text available
    Text: MMA612 DC to 12 GHz Amplifier FEATURES: • DC - 12 GHz Broadband Gain Block. • Flat gain over bandwidth +/- 1 dB. • 50 Ohm match Input/Output DESCRIPTION: The MMA612 is a fully matched Darlington Amplifier Die, constructed with reliable InGaP-GaAs HBT technology.


    Original     		PDF MMA612

    transistor tip 1050

    Abstract: HBT transistor PH ON 823 0728 tip 410 transistor
    Text: MMT501 InGaP HBT Transistor DEVICE HANDLING RECOMMENDATIONS ESD These devices are Class 1 devices 0–500 V for Electrostatic Discharge Sensitivity (ESD) and must be handled accordingly to prevent damage. Proper ESD precautions should be observed during all


    Original     		PDF MMT501 MIL-HDBK-263 MIL-STD-1686. transistor tip 1050 HBT transistor PH ON 823 0728 tip 410 transistor

    MPN7620-ET47

    Abstract: mpn7620 MPN7 MPN-7630 cla4603-000 MCE Metelics
    Text: sj Ul_ UC, MPV-22-2003 UU tJLJ • 14:03 I I\ 1l—'w 14087337645 MCE METEL ICS P.02 MPN7600 Series Limiter Diodes Mesa Construction Mete Iics Corporation Applications: Limiters Maximum Ratings Storage Temperature Operating Temperature Replaces cC/W Chip Size


    OCR Scan     		PDF MPV-22-2003 MPN7600 PN-7610 MPN-7620 MPN-7630 MPN766Û CLA3134-01 CLA46 CLA4603-000 CLA3132-01 MPN7620-ET47 mpn7620 MPN7 MCE Metelics

    MPND-4005

    Abstract: MPND4005 MCE Metelics MBP-1030 metelics anti-parallel
    Text: MTLXS00066 metelics SCHOTTKY FOR MIXER, DOUBLER OR BIASED DETECTOR • ojsmoi4i ' ojeioooq PART NUMBER MSS-30, MSS-40, MSS-50, MSS-60, 142 141 146 144 TYPE VF @ 1 mA mV MAX. RD @ 5 mA SINGLE SINGLE SINGLE SINGLE 230 TO 350 335 TO 505 415 TO 625 580 TO 675


    OCR Scan     		PDF MTLXS00066 MSS-30, MSS-40, MSS-50, MSS-60, PCR46 MPND-4005 MPND4005 MCE Metelics MBP-1030 metelics anti-parallel