relay srd
Abstract: No abstract text available
Text: MCE TECHNOLOGIES Products that make a world of difference MCE Technologies, Inc. is a world leader in the design, manufacture and marketing of microwave and RF devices, components and subsystems for wireless applications including cellular/ mobile GSM, WCDMA and CDMA2000 base stations, satellite, wireless
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CDMA2000
relay srd
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MGV-125-20
Abstract: MA46470 MCE Metelics MCE Metelics MGV-100-20 MGV-125-22 MGV125-22
Text: 975 Stewart Drive • Sunnyvale, CA 94085 • www.metelics.com PH 408.737.8181 • FX 408.733.7645 • sales@metelics.com Copyright 2002 MCE Metelics. All rights reserved. Specifications subject to change without notice. Revision date 1.24.05 aAs H GaAs Hyperabrupt Tuning Varactors
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MMD820-C12
Abstract: MMD805 MMD-810 MCE Metelics MMD-820-C12 MMD835-C1 MMD-805-C12 MMD-840-C12 step recovery diodes comb generator
Text: C12 17 [.432] 13 [.330] Top contact is Anode except for MSS20,000 and MSS39,000 series diodes > 2 [0.051] 17 [.432] 13 [.330] Top Contact Dimensions in mils [mm] Back Contact MCE / Metelics Corporation, 975 Stewart Drive, Sunnyvale, California 94086, 408-737-8181, Fax: 408-733-7645
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MSS20
MSS39
MMD820-C12
MMD805
MMD-810
MCE Metelics
MMD-820-C12
MMD835-C1
MMD-805-C12
MMD-840-C12
step recovery diodes
comb generator
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MGM-801
Abstract: MCE Metelics
Text: MGM-801 GAIN MODULE FEATURES • • • • Full 2–4 GHz Frequency Range 10.5 dB Gain Surface Mount Package: 0.500" x 0.330" x 0.085" Single Bias Supply Voltage APPLICATIONS DC • Lo Buffer/Distribution amplifier • Broadband, wide dynamic range IF amplifier
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MGM-801
MGM-801
MCE Metelics
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MGV-100-20
Abstract: MGV-125-20 MGV-125-22 MGV-125-25 MGV-100-21 MGV-075-10 MCE Metelics MGV-100-20 MGV-100-23 MA46471 MA46472
Text: GaAs Hyperabrupt Tuning Varactors FEATURES PACKAGE STYLES • Constant Gamma 0.75, 1.00, or 1.25 over a wide tuning ratio • High Q • Linear Frequency Tuning • Stable performance in High Reliability environment • Available in Packaged and Chip Form
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MGV-075
MGV-100
MGV-125
MGV-100-20
MGV-125-20
MGV-125-22
MGV-125-25
MGV-100-21
MGV-075-10
MCE Metelics MGV-100-20
MGV-100-23
MA46471
MA46472
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77505
Abstract: 2310 fx MMA710-SOT89TR 75558 TRANSISTOR 6822 MMA710-SOT89 2944 3443 SOT-89 1000DB MMA710
Text: MMA710-SOT89 Darlington HBT Amplifier FEATURES G • 100 KHz to 4 GHz Bandwidth • +21 dBm Output Power at P-1dB Compression • +35 dBm Third Order Intercept MMA 710 The MMA710 is a packaged InGaP Heterojunction Bipolar Transistor HBT Darlington amplifier in a low cost SOT-89 surface mount
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MMA710-SOT89
MMA710
OT-89
MMA710-SOT89TR
MMA710-SOT89EB
77505
2310 fx
MMA710-SOT89TR
75558
TRANSISTOR 6822
MMA710-SOT89
2944
3443 SOT-89
1000DB
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MMA701-SOT89
Abstract: MCE Metelics
Text: MMA701-SOT89 Load Pull Frequency in MHz Vce=5.00V Freq. Mag Angle 824 837 849 869 881 894 910 930 960 1710 1740 1770 1790 1820 1850 1910 1930 1960 1990 2110 2140 2170 2400 2450 2500 2600 2700 0.199 0.192 0.191 0.221 0.201 0.177 0.211 0.223 0.231 0.171 0.211
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MMA701-SOT89
MCE Metelics
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MMA60
Abstract: 8 mu 0833 MCE Metelics
Text: MMA601 High Linearity HBT Die FEATURES • • • • + 44 dBm IP3 at 2.1 GHz + 26 dBm Output Power at P-1dB Compression 50% Power added efficiency typical 100 MHz to 5000 MHz Operation The MMA601 is an InGaP Heterojunction Bipolar Transistor (HBT) provided
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MMA601
MMA601
44dBm
MMA60
8 mu 0833
MCE Metelics
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330105
Abstract: 143-754 metelics 2598 85890 121-270 544 mmic MMA602 462501 97346 550538
Text: MMA602 Darlington HBT Die FEATURES • 100 KHz to 5 GHz Bandwidth • +21 dBm Output Power at P-1dB Compression • +35 dBm Third Order Intercept The MMA602 is a MMIC InGaP Heterojunction Bipolar Transistor HBT Darlington amplifier provided in die form. The amplifier
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MMA602
MMA602
P-974279E-01
046998E-01
059359E-01
053424E-01
004735E-01
996801E-01
057717E-01
330105
143-754
metelics 2598
85890
121-270
544 mmic
462501
97346
550538
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PH 0852
Abstract: 40530 transistor
Text: MMA701-SOT89 High Linearity Packaged HBT FEATURES • • • • G +45 dBm IP3 at 2.1 GHz +25 dBm Output Power at P-1dB Compression 50% Power added efficiency typical 100 MHz to 4000 MHz Operation MMA 701 The MMA701 is an InGaP Heterojunction Bipolar Transistor (HBT)
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MMA701-SOT89
MMA701
OT-89
MMA701
MMA701-SOT89TR
MMA701-SOT89EB,
PH 0852
40530 transistor
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amplifier diagram
Abstract: No abstract text available
Text: MMA612 DC to 12 GHz Amplifier FEATURES: • DC - 12 GHz Broadband Gain Block. • Flat gain over bandwidth +/- 1 dB. • 50 Ohm match Input/Output DESCRIPTION: The MMA612 is a fully matched Darlington Amplifier Die, constructed with reliable InGaP-GaAs HBT technology.
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MMA612
amplifier diagram
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40530 transistor
Abstract: MMA701-SOT89TR 7905 sot89 MMA 7815 MMA701 MMA701-SOT89 AN 7591 POWER AMPLIFIER PH 0852 7814 transistor AN 7591
Text: MMA701-SOT89 High Linearity Packaged HBT FEATURES • • • • G +45 dBm IP3 at 2.1 GHz +25 dBm Output Power at P-1dB Compression 50% Power added efficiency typical 100 MHz to 4000 MHz Operation MMA 701 The MMA701 is an InGaP Heterojunction Bipolar Transistor (HBT)
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MMA701-SOT89
MMA701
OT-89
MMA701
MMA701-SOT89TR
MMA701-SOT89EB,
40530 transistor
MMA701-SOT89TR
7905 sot89
MMA 7815
MMA701-SOT89
AN 7591 POWER AMPLIFIER
PH 0852
7814 transistor
AN 7591
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Untitled
Abstract: No abstract text available
Text: MMA612 DC to 12 GHz Amplifier FEATURES: • DC - 12 GHz Broadband Gain Block. • Flat gain over bandwidth +/- 1 dB. • 50 Ohm match Input/Output DESCRIPTION: The MMA612 is a fully matched Darlington Amplifier Die, constructed with reliable InGaP-GaAs HBT technology.
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transistor tip 1050
Abstract: HBT transistor PH ON 823 0728 tip 410 transistor
Text: MMT501 InGaP HBT Transistor DEVICE HANDLING RECOMMENDATIONS ESD These devices are Class 1 devices 0–500 V for Electrostatic Discharge Sensitivity (ESD) and must be handled accordingly to prevent damage. Proper ESD precautions should be observed during all
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MMT501
MIL-HDBK-263
MIL-STD-1686.
transistor tip 1050
HBT transistor
PH ON 823
0728
tip 410 transistor
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MPN7620-ET47
Abstract: mpn7620 MPN7 MPN-7630 cla4603-000 MCE Metelics
Text: sj Ul_ UC, MPV-22-2003 UU tJLJ • 14:03 I I\ 1l—'w 14087337645 MCE METEL ICS P.02 MPN7600 Series Limiter Diodes Mesa Construction Mete Iics Corporation Applications: Limiters Maximum Ratings Storage Temperature Operating Temperature Replaces cC/W Chip Size
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MPV-22-2003
MPN7600
PN-7610
MPN-7620
MPN-7630
MPN766Û
CLA3134-01
CLA46
CLA4603-000
CLA3132-01
MPN7620-ET47
mpn7620
MPN7
MCE Metelics
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MPND-4005
Abstract: MPND4005 MCE Metelics MBP-1030 metelics anti-parallel
Text: MTLXS00066 metelics SCHOTTKY FOR MIXER, DOUBLER OR BIASED DETECTOR • ojsmoi4i ' ojeioooq PART NUMBER MSS-30, MSS-40, MSS-50, MSS-60, 142 141 146 144 TYPE VF @ 1 mA mV MAX. RD @ 5 mA SINGLE SINGLE SINGLE SINGLE 230 TO 350 335 TO 505 415 TO 625 580 TO 675
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MTLXS00066
MSS-30,
MSS-40,
MSS-50,
MSS-60,
PCR46
MPND-4005
MPND4005
MCE Metelics
MBP-1030
metelics anti-parallel
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