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    MCD224 Search Results

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    MCD224 Price and Stock

    IXYS Corporation MCD224-20IO1

    MOD THYRISTOR/DIODE 2000V Y1-CU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MCD224-20IO1 Box 2 1
    • 1 $177.89
    • 10 $177.89
    • 100 $177.81
    • 1000 $177.81
    • 10000 $177.81
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    Mouser Electronics MCD224-20IO1 47
    • 1 $177.88
    • 10 $177.88
    • 100 $177.84
    • 1000 $177.84
    • 10000 $177.84
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    TME MCD224-20IO1 1
    • 1 $266.05
    • 10 $234.45
    • 100 $234.45
    • 1000 $234.45
    • 10000 $234.45
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    IXYS Corporation MCD224-22IO1

    MOD THYRISTOR/DIODE 2200V Y1-CU
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MCD224-22IO1 Box 3
    • 1 -
    • 10 $189.65
    • 100 $189.65
    • 1000 $189.65
    • 10000 $189.65
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    Mouser Electronics MCD224-22IO1
    • 1 $189.65
    • 10 $189.65
    • 100 $189.65
    • 1000 $189.65
    • 10000 $189.65
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    TME MCD224-22IO1 1
    • 1 $285.42
    • 10 $251.78
    • 100 $251.78
    • 1000 $251.78
    • 10000 $251.78
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    Littelfuse Inc MCD224-22IO1

    Bipolar Module - Thyristor/Diode Y1-Cu/ Box |Littelfuse MCD224-22IO1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MCD224-22IO1 Bulk 3
    • 1 $216.96
    • 10 $210.9
    • 100 $198.76
    • 1000 $198.76
    • 10000 $198.76
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    Littelfuse Inc MCD224-20IO1

    Bipolar Module - Thyristor/Diode Y1-Cu/ Box |Littelfuse MCD224-20IO1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark MCD224-20IO1 Bulk 3
    • 1 $203.42
    • 10 $197.73
    • 100 $186.35
    • 1000 $186.35
    • 10000 $186.35
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    Cree, Inc. CLM3A-GKW-CWAXA783

    Single Color LEDs Green
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI CLM3A-GKW-CWAXA783 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.158
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    MCD224 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MCD224-20IO1 IXYS SCRs - Modules, Discrete Semiconductor Products, MOD THYRISTOR/DIODE 2000V Y1-CU Original PDF
    MCD224-20IO1 IXYS 2000V thyristor modules thyristor/diode module Original PDF
    MCD224-22IO1 IXYS SCRs - Modules, Discrete Semiconductor Products, MOD THYRISTOR/DIODE 2200V Y1-CU Original PDF
    MCD224-22IO1 IXYS 2200V thyristor modules thyristor/diode module Original PDF

    MCD224 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    13006 TRANSISTOR

    Abstract: transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D
    Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 01 — 11 May 2004 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken


    Original     		PMBFJ620 OT363 MSC895 13006 TRANSISTOR transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D PDF

    PMBFJ620,115

    Abstract: No abstract text available
    Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken


    Original     		PMBFJ620 OT363 PMBFJ620,115 PDF

    pmbfj310

    Abstract: No abstract text available
    Text: 3 SO T2 PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION


    Original     		PMBFJ308; PMBFJ309; PMBFJ310 PMBFJ308 pmbfj310 PDF

    J310

    Abstract: J309 application note J308 J310 applications J309 MCD212 MCD221 VHF Transistors
    Text: DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors


    Original     		PDF

    PMBFJ620

    Abstract: No abstract text available
    Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken


    Original     		PMBFJ620 OT363 771-PMBFJ620-T/R PMBFJ620 PDF

    J310

    Abstract: J309 J310 Application Note Transistor J310 J308 j310 equivalent MCD217 MCD212 MCD221
    Text: DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors


    Original     		PDF

    marking code 10 sot23

    Abstract: MCD217 PMBFJ310 MCD221 PMBFJ308 PMBFJ309 PMBFJ310,2
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Sep 11 Philips Semiconductors Product specification


    Original     		PMBFJ308; PMBFJ309; PMBFJ310 marking code 10 sot23 MCD217 PMBFJ310 MCD221 PMBFJ308 PMBFJ309 PMBFJ310,2 PDF

    pmbfj310

    Abstract: PMBFJ308 PMBFJ309 13403 PMBFJ310,2
    Text: PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 03 — 23 July 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected


    Original     		PMBFJ308; PMBFJ309; PMBFJ310 MSC895 pmbfj310 PMBFJ308 PMBFJ309 13403 PMBFJ310,2 PDF

    j310 equivalent

    Abstract: J310 J310 applications J309 Transistor J310 J308 MCD221
    Text: Philips Semiconductors Product specification N-channel silicon field-effect transistors FEA TU R ES J308; J309; J310 P IN N IN G - T O -92 • Low noise PIN SYM BOL • Interchangeability of drain and source connections 1 g gate • High gain. 2 s source 3


    OCR Scan     		711002b 010bb02 010bb03 j310 equivalent J310 J310 applications J309 Transistor J310 J308 MCD221 PDF

    Untitled

    Abstract: No abstract text available
    Text: bbsa'm Philips Sem iconductors 0024012 2T2 • a p x N-channel silicon field-effect transistors N AUER PHIL IPS /DISCR ETE Preliminary specification J308/309/310 b?E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections


    OCR Scan     		J308/309/310 -TO-92 MCD212 bbS3831 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1,1.53^31 002405T 333 « A P X P hilips S em iconductors N-channel silicon field-effect transistors Prelim inary specification PM B FJ308/309/310 N AMER PHILIPS/DISCRETE □7E I "- PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and


    OCR Scan     		002405T FJ308/309/310 UBB114- PMBFJ308: PMBFJ309: PMBFJ310: -SOT23 PMBFJ308/309/310 PMBFJ308, PDF

    MCD40-12

    Abstract: MCD40 MCD16208IO MCD95-14IO8 MCD56-16 MCD72-16 06io1 MCD224-22IO1 mcd401 M11-P
    Text: Thyristor / Diode Modules ¡ h t iif i lw = 27-250 A Type v RRM Tc V rms rT TSM □ p ^"vJM 45°C 10ms th,/C per Chip V A °C A A V m °C K/W MCD26-08io8B MCD26-12io8B MCD26-14io8B MCD26-16io8B 800 1200 1400 1600 27 85 50 520 0.85 11 125 0.88 MCD40-12ÌO6


    OCR Scan     		MCD26-08io8B MCD26-12io8B MCD26-14io8B MCD26-16io8B MCD40-12 MCD40-16io6 MCD44-08io8B MCD44-12io8B MCD44-14io8B MCD44-16io8B MCD40 MCD16208IO MCD95-14IO8 MCD56-16 MCD72-16 06io1 MCD224-22IO1 mcd401 M11-P PDF

    UCD224

    Abstract: transistor 309 JCD222 PMBFJ308 PMBFJ309 PMBFJ310 MCD217 TIL 309
    Text: GOEHOST Philips Sem iconductors E33 IAPX N-channel silicon field-effect transistors N a piE R Prelim inary specification PM B FJ308/309/310 P H IL IP S /D IS C R E T E b7E PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and source connections


    OCR Scan     		FJ308/309/310 PMBFJ308: PMBFJ309: PMBFJ310: PMBFJ308/309/310 PMBFJ308, UCD224 transistor 309 JCD222 PMBFJ308 PMBFJ309 PMBFJ310 MCD217 TIL 309 PDF

    MCD228

    Abstract: PMBFJ310 MCD214 MCD221 PMBFJ309 marking BSs sot23 n-channel MCD217 PMBFJ308 MA1612 SOT-23 bdi
    Text: Philips Semiconductors Product specification N-channel silicon field-effect transistors FEATURES PMBFJ308, F^BW309, PMBFJ310 PINNING - SOT23 • Low noise PIN SYMBOL • Interchangeability of drain and source connections 1 s source • High gain. 2 d drain


    OCR Scan     		PMBFJ308; PMBFJ309; PMBFJ310 PMBFJ308: PMBFJ309: PMBFJ310: MCD226 MCD228 PMBFJ310 MCD214 MCD221 PMBFJ309 marking BSs sot23 n-channel MCD217 PMBFJ308 MA1612 SOT-23 bdi PDF