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Catalog Datasheet	MFG & Type	Document Tags	PDF
13006 TRANSISTOR Abstract: transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 01 — 11 May 2004 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to electrostatic discharge ESD . Therefore care should be taken	Original	PMBFJ620 OT363 MSC895 13006 TRANSISTOR transistor 13006 E 13006 13006 MCD217 PMBFJ620 FET MARKING 13006 D	PDF
PMBFJ620,115 Abstract: No abstract text available Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken	Original	PMBFJ620 OT363 PMBFJ620,115	PDF
pmbfj310 Abstract: No abstract text available Text: 3 SO T2 PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 4 — 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION	Original	PMBFJ308; PMBFJ309; PMBFJ310 PMBFJ308 pmbfj310	PDF
J310 Abstract: J309 application note J308 J310 applications J309 MCD212 MCD221 VHF Transistors Text: DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors	Original		PDF
PMBFJ620 Abstract: No abstract text available Text: PMBFJ620 Dual N-channel field-effect transistor Rev. 2 — 15 September 2011 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to ElectroStatic Discharge ESD . Therefore care should be taken	Original	PMBFJ620 OT363 771-PMBFJ620-T/R PMBFJ620	PDF
J310 Abstract: J309 J310 Application Note Transistor J310 J308 j310 equivalent MCD217 MCD212 MCD221 Text: DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors	Original		PDF
marking code 10 sot23 Abstract: MCD217 PMBFJ310 MCD221 PMBFJ308 PMBFJ309 PMBFJ310,2 Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Sep 11 Philips Semiconductors Product specification	Original	PMBFJ308; PMBFJ309; PMBFJ310 marking code 10 sot23 MCD217 PMBFJ310 MCD221 PMBFJ308 PMBFJ309 PMBFJ310,2	PDF
pmbfj310 Abstract: PMBFJ308 PMBFJ309 13403 PMBFJ310,2 Text: PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 03 — 23 July 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected	Original	PMBFJ308; PMBFJ309; PMBFJ310 MSC895 pmbfj310 PMBFJ308 PMBFJ309 13403 PMBFJ310,2	PDF
Untitled Abstract: No abstract text available Text: 1,1.53^31 002405T 333 « A P X P hilips S em iconductors N-channel silicon field-effect transistors Prelim inary specification PM B FJ308/309/310 N AMER PHILIPS/DISCRETE □7E I "- PIN CONFIGURATION FEATURES • Low noise • Interchangeability of drain and	OCR Scan	002405T FJ308/309/310 UBB114- PMBFJ308: PMBFJ309: PMBFJ310: -SOT23 PMBFJ308/309/310 PMBFJ308,	PDF