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    MC 140 TRANSISTOR Search Results

    MC 140 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MC 140 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    aaf marking sot23-5

    Abstract: MCP73832 MCP7383X-2 MCP73831 "Charge Management Controller" marking code e2 sot23-5 DS21984B MCP7383X-5 SOT23 marking code AAR
    Text: MCP73831/2 Miniature Single-Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controllers Features: Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: + 0.75%


    Original     		PDF MCP73831/2 MCP73831 MCP73832 MCP73831/2 DS21984B-page aaf marking sot23-5 MCP73832 MCP7383X-2 MCP73831 "Charge Management Controller" marking code e2 sot23-5 DS21984B MCP7383X-5 SOT23 marking code AAR

    3DG 130

    Abstract: MCP73832 MCP7383X MCP73831 MCP73831T aae sot-23 marking JC51-7 AAK marking code
    Text: MCP73831/2 Miniature Single-Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controllers Features Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: + 0.75%


    Original     		PDF MCP73831/2 MCP73831 MCP73832 DS21984C-page 3DG 130 MCP73832 MCP7383X MCP73831 MCP73831T aae sot-23 marking JC51-7 AAK marking code

    MCP73831

    Abstract: aaf marking sot23-5 aae DFN marking MCP73831T Li-ion charger controller sot23-5 MCP73831-4 C04 SOT23 MCP73831T-5ACI/MC mosfet 4433 AAK marking code
    Text: MCP73831 Miniature Single Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controller Features: Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: + 0.75%


    Original     		PDF MCP73831 MCP73831 DS21984A-page aaf marking sot23-5 aae DFN marking MCP73831T Li-ion charger controller sot23-5 MCP73831-4 C04 SOT23 MCP73831T-5ACI/MC mosfet 4433 AAK marking code

    Untitled

    Abstract: No abstract text available
    Text: MCP73831/2 Miniature Single-Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controllers Features Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: + 0.75%


    Original     		PDF MCP73831/2 MCP73831 MCP73832 DS20001984F-page

    Battery Management

    Abstract: MCP73831-2
    Text: MCP73831/2 Miniature Single-Cell, Fully Integrated Li-Ion, Li-Polymer Charge Management Controllers Features Description: • Linear Charge Management Controller: - Integrated Pass Transistor - Integrated Current Sense - Reverse Discharge Protection • High Accuracy Preset Voltage Regulation: + 0.75%


    Original     		PDF MCP73831/2 MCP73831 MCP73832 DS20001984F-page Battery Management MCP73831-2

    Transistor C5019

    Abstract: C5019 MC 140 transistor
    Text: KSC5019 KSC5019 Low Saturation • VCE sat =0.5V at IC=2A, IB=50mA TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 30 Units


    Original     		PDF KSC5019 PW10ms, Cycle30% KSC5019 KSC5019MBU KSC5019MTA KSC5019NTA Transistor C5019 C5019 MC 140 transistor

    kc 5188

    Abstract: 7805 Ka 2535 data sheet
    Text: NTC SMD Thermistors With Nickel Barrier Termination NB 12 - NB 20 - NB 21 Chip thermistors are high quality and low cost devices especially developed for surface mounting applications. They are widely used for temperature compensation but can also achieve temperature control of printed circuits.


    Original     		PDF

    P-8CM

    Abstract: IC P605 8 pin DIODE P31A "triac protection" overcurrent MOV surge protection circuit diagram p31b DIODE P31B Teccor P0080SC MC marking code diode s4 do-214 P3100EB
    Text: Data Book and Design Guide TECCOR ELECTRONICS 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Web site: http://www.teccor.com E-mail: techsalessidactor@littelfuse.com A Littelfuse company Teccor Electronics is the proprietor of the SIDACtor , Battrax®, and TeleLink®


    Original     		PDF E133083 E191008 O-220 P-8CM IC P605 8 pin DIODE P31A "triac protection" overcurrent MOV surge protection circuit diagram p31b DIODE P31B Teccor P0080SC MC marking code diode s4 do-214 P3100EB

    diode cc 3053

    Abstract: cc 3053 NTC THERMISTORS nd06 NI24RA0104 THERMISTORS SCK 055 ntc 150-7 10 k ntc thermistor 4 PC smd DA RN smd code nj
    Text: A KYOCERA GROUP COMPANY TPC NTC Thermistors - Preliminary Catalog NTC SMD Thermistors With Nickel Barrier Termination NB 12 - NB 20 - NB 21 Chip thermistors are high quality and low cost devices especially developed for surface mounting applications. They


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA TELEPHONE: 97Q 376-2022 (212)227-6008 FAX: (973) 3764860 SILICON PLANEX* TRANSISTOR Quality Semi-Conductors 2N3056A *.IMV»WOUJ-I . 2N3056A is a silicon NPN PLANEX* transistor, designed to provide a high breakdown voltage with a low saturation resistance. This


    Original     		PDF 2N3056A 2N3056A VCB-90 150ma 500ma Vce-10

    NTC THERMISTOR 3470

    Abstract: SMD MARKING CODE N03 zener diode marking 182 bd 222 smd varistors 1399 GE SMD zener diode AVX BAR code ON THE label SMD MARKING CODE zener diode 501 Midwest Components THERMISTOR ND03N00103J
    Text: AVX NTC Thermistors Contents NTC Thermistors NTC THERMISTORS General Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Application Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6


    Original     		PDF S-TNTC0M412-C NTC THERMISTOR 3470 SMD MARKING CODE N03 zener diode marking 182 bd 222 smd varistors 1399 GE SMD zener diode AVX BAR code ON THE label SMD MARKING CODE zener diode 501 Midwest Components THERMISTOR ND03N00103J

    varistors 1399

    Abstract: RHODORSIL RC 70 NF13 zener diode reference guide avx nf13 2001 ka 7542 THERMISTORS SCK 016 TH NF13 ntc nb12 diode NK20
    Text: AVX NTC Thermistors Contents NTC Thermistors NTC THERMISTORS General Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Application Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6


    Original     		PDF S-TNTC3M406-N varistors 1399 RHODORSIL RC 70 NF13 zener diode reference guide avx nf13 2001 ka 7542 THERMISTORS SCK 016 TH NF13 ntc nb12 diode NK20

    diode cc 3053

    Abstract: THERMISTORS SCK 055 C 5763 transistor Ka 2535 TM 1628 Datasheet TL 7805 NTC THERMISTORS nd06 smd diode marking KC NTC 4,7 cc 3053
    Text: A KYOCERA GROUP COMPANY TPC Thermistors NTC Contents Thermistors NTC General Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Application Notes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6


    Original     		PDF S-TNTC10M698-N diode cc 3053 THERMISTORS SCK 055 C 5763 transistor Ka 2535 TM 1628 Datasheet TL 7805 NTC THERMISTORS nd06 smd diode marking KC NTC 4,7 cc 3053

    Untitled

    Abstract: No abstract text available
    Text: iLcti, One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N4080 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 PNP SILICON PLANEX TRANSISTOR MECHANICAL DATA CASE: JEDEC TO-18 with four leads TERMINAL CONNECTIONS: Lead 1 Emitter Lead 3 Collector


    Original     		PDF 2N4080 65/-H) 874-LA

    B0530

    Abstract: 2N7089
    Text: 2N7089 Siliconix PĆChannel EnhancementĆMode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) -100 0.30 -10 TOĆ257AB Hermetic Package S G Case Isolated D G D S PĆChannel MOSFET Top View Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF 2N7089 O257AB P36731Rev. B0530 2N7089

    2N6849

    Abstract: W41A
    Text: 2N6849 N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) (W) ID (A) –100 0.30 –6.5 Parametric limits in accordance with MIL-S-19500/564 where applicable. S TO-205AF (TO-39) S G 1 2 3 G D Top View D P-Channel MOSFET Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)


    Original     		PDF 2N6849 MIL-S-19500/564 O-205AF P-37010--Rev. 06-Jun-94 2N6849 W41A

    FET BFW 43

    Abstract: MPSA 506 transistor TRANSISTOR BC 157 TRANSISTOR BC 530 transistor BF 298 BFT58 transistor mpsa 42 BFW 43 transistor transistor 2SA transistor 2 sa 72 transistor BF 257
    Text: 4.2+« 4.2+* I OOOOO C MC MC MC MC M O O O 1O C Mt—i— 1 C M Oo C MC M - I I I I CMC MC MC MC M C MID ID 1 C M OO C MC M lO ID ID LOLD C MC MC M*- t-* o' ò o’ O* O 1 LOLOLOLO C MC MC MC M o d O* O 0> «—C Mr- C MC M - Ul O> > IO o o o o CO»—« —*—


    OCR Scan     		PDF 0000b7D O-106 O-92F O-92A to-02 melf-002. melf-006 to-237 FET BFW 43 MPSA 506 transistor TRANSISTOR BC 157 TRANSISTOR BC 530 transistor BF 298 BFT58 transistor mpsa 42 BFW 43 transistor transistor 2SA transistor 2 sa 72 transistor BF 257

    2SA205

    Abstract: No abstract text available
    Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF 200Mc Tr-25 455kc 2SA205

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H I LIPS/DISCRETE QbE D PowerMOS transistor • bbSBTBl 0014737 4 ■ BUZ384 T - V 1 'I Z May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is


    OCR Scan     		PDF BUZ384 bbS3i31 00147T0 BUZ384 T-39-13 bb53T31 bb53T31 Q0147TS

    0f10v

    Abstract: No abstract text available
    Text: TELEDYNE COMPONENTS m äT17büa Q0üb577 3 EÒE D F O T O F ET SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR FF 108 G E O M E T R Y 282 • • • • • HIGH SENSITIVITY LOW D A R K CURRENT FAST RESPONSE PHOTOTUBE REPLACEMENT FLAT GLASS TOP FOR EXTERNAL OPTICS


    OCR Scan     		PDF 400mW 0f10v

    2SC3279

    Abstract: 420600
    Text: M C C TO-92 Plastic-Encapsulate Transistors ^ 2 S C 3 2 7 9 TR A N S IS T O R N P N FEATURES Power dissipation TO-92 Pcm: 0.75W (Tamb=25°C) Collector current 1 .E M IT T E R IcM: 2 A 2.C O LLEC TO R Collector-base voltage ViBR)cao: 3 .BASE T 30 V Operating end storage junction temperature range


    OCR Scan     		PDF 2SC3279 -30MHz 2SC3279 420600

    uei 350

    Abstract: K 3567 MMBT3568 MMBTA05 MMBTA06 MMBTA42 MMBTA43 mmbt
    Text: Surface Mount Transistors Medium Power—NPN VCER* VCEO V Min V eb o (V) Min MMBT3568 TO-236 (49) 80 60 5 Its MMBT3700 TO-236 (49) 140 Type No. Case Style 80 7 »T Ic e s * C0b *oft NF VCE(SAT) V b E(SAT) Test Process (MHz) @ lc •cBOa VCB hre lc & VCE


    OCR Scan     		PDF tSD1130 O-236 uei 350 K 3567 MMBT3568 MMBTA05 MMBTA06 MMBTA42 MMBTA43 mmbt

    BUZ84

    Abstract: No abstract text available
    Text: N AMER PH IL IP S/ D I S CR E T E PowerMOS transistor ObE D • bb53T31 O O m b l b BU Z84 1 ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF bb53T31 BUZ84 T-39-13 S3131 BXXZ84_ D0147Q2 BUZ84

    MC1460r

    Abstract: mc1461 2N3055 series voltage regulator Motorola Mc 1461 MC1561 MC1460 MC1560R 2n3055 voltage regulator MC1560G MC1561R
    Text: MC1560, MC1561 MC1460, MC1461 MOf JOLITHIC . C LT/5 GE REGUL/ TOR P O S I T i 'V'- E - P O W E R - S U P P L Y , , . designed to d eliver c o n tin u o u s load c u rre n t up to 5 0 0 m A w ith o u t use o f an e x te rn a l p ow er transistor. V O LTAG E R E G O LA T O R


    OCR Scan     		PDF MC1560, MC1561 MC1460, MC1461 20milliohms MC1561) MC1460r mc1461 2N3055 series voltage regulator Motorola Mc 1461 MC1460 MC1560R 2n3055 voltage regulator MC1560G MC1561R