MBN800E33D
Abstract: No abstract text available
Text: Spec.No.IGBT-SP-03012 R1 IGBT MODULE MBN800E33D PRELIMINARY SPEC. Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode.
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IGBT-SP-03012
MBN800E33D
000cycles)
MBN800E33D
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MBN800E33D
Abstract: MBN800
Text: IGBT MODULE Spec.No.IGBT-SP-03012 R4 P1 MBN800E33D Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-03012
MBN800E33D
000cycles)
MBN800E33D
MBN800
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-13012 R0 P1/10 MBN800E33D-AX Silicon N-channel IGBT 3300V D version FEATURES High speed low loss IGBT. Low-injection punch-through IGBT. Low driving power due to low input capacitance MOS gate. High speed low recovery loss diode.
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IGBT-SP-13012
P1/10
MBN800E33D-AX
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-03012 R5 MBN800E33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-03012
MBN800E33D
000cycles)
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Untitled
Abstract: No abstract text available
Text: IGBT MODULE Spec.No.IGBT-SP-03012 R5 MBN800E33D Silicon N-channel IGBT FEATURES ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input capacitance MOS gate. ∗ Low noise due to ultra soft fast recovery diode. ∗ High reliability, high durability module.
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IGBT-SP-03012
MBN800E33D
000cycles)
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MDM800E33D
Abstract: No abstract text available
Text: DUAL DIODE MODULE Spec.No.SR2-SP-03002R8 MDM800E33D FEATURES Low noise due to soft and fast recovery diodes. High reliability, high durability diodes. Isolated heat sink terminal to base . o ABSOLUTE MAXIMUM RATINGS (TC=25 C) Item Symbol Repetitive Peak Reverse Voltage
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SR2-SP-03002R8
MDM800E33D
MDM800E33D
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mbm150gr12
Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt
Text: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics
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MBN1200E17D
MBN1600E17D
MBN1800E17D
KS10004
mbm150gr12
MBN1200D33A
C2E1
MBM300GS12A
5252 F 1002
MDN1200D33
m8nd
mbm200js12ew
MBM800E17D
mbn1200e25c igbt
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Untitled
Abstract: No abstract text available
Text: DUAL DIODE MODULE Spec.No.SR2-SP-03002R8 MDM800E33D FEATURES ∗ Low noise due to soft and fast recovery diodes. ∗ High reliability, high durability diodes. ∗ Isolated heat sink terminal to base . o ABSOLUTE MAXIMUM RATINGS (TC=25 C) Item Repetitive Peak Reverse Voltage
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SR2-SP-03002R8
MDM800E33D
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C2E1
Abstract: MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12
Text: ステータスリスト 2010.09 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。 】 Ｃ：適合 Ｓ.Ｃ：適合 Ｎ：未対応 （但し適用除外項目物質を含有） 【ステータス】 Ｍ：量産品 Ｗ：ＷＳ
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MBN1200E17D
MBN1600E17D
MBN1800E17D
MBN1800E17DD
MBN2400E17D
MBN1200E17E
12-Fast-on
KS10003
C2E1
MDN1200D33
MBN1200D33A
mbm150gr12
MBM300GS12A
MBN1200E25C
MBM500E33E2
MBM300GS12AW
MBL400e
MBM300GR12
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N2M400
Abstract: MBN1200D33A MBM300GS12AW C2E1 MBM200JS12EW MBN600C33A MBN600GS12AW MBM75GS12AW MBN1200D33C MBN1200E25C
Text: Status List M:Mass production Date:Jul. 2005 W:Working sample KS05013 A:Abolition High-Voltage High-Power Series Absolute Maximum Ratings Connection Single Chopper Connection Diode Characteristics VCES IC PC VCE sat ton toff tf Outline Status (V) (A) (W)
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KS05013
MBN800E33D
MBN1200E33D
MBN1200D33C
MBN600C33A
MBN400C33A
MBN1200E25C
N2M400
MBN1200D33A
MBM300GS12AW
C2E1
MBM200JS12EW
MBN600C33A
MBN600GS12AW
MBM75GS12AW
MBN1200D33C
MBN1200E25C
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