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    MBN1200E25C IGBT Search Results

    MBN1200E25C IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    MBN1200E25C IGBT Datasheets Context Search

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    MBN1200E25C

    Abstract: mbn1200e25c igbt
    Text: IGBT MODULE Spec.No.IGBT-SP-05023 R0 MBN1200E25C Silicon N-channel IGBT OUTLINE DRAWING FEATURES ∗ High thermal fatigue durability. delta Tc=70℃, N>30,000cycles ∗ Low noise due to ultra soft fast recovery diode. ∗ High speed, low loss IGBT module.


    Original     		PDF IGBT-SP-05023 MBN1200E25C 000cycles) MBN1200E25C mbn1200e25c igbt

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-05023 R1 MBN1200E25C Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70 , N>30,000cycles ∗ Low noise due to ultra soft fast recovery diode. ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input


    Original     		PDF IGBT-SP-05023 MBN1200E25C 000cycles)

    Untitled

    Abstract: No abstract text available
    Text: IGBT MODULE Spec.No.IGBT-SP-05023 R2 MBN1200E25C Silicon N-channel IGBT FEATURES ∗ High thermal fatigue durability. delta Tc=70 , N>30,000cycles ∗ Low noise due to ultra soft fast recovery diode. ∗ High speed, low loss IGBT module. ∗ Low driving power due to low input


    Original     		PDF IGBT-SP-05023 MBN1200E25C 000cycles)

    mbm150gr12

    Abstract: MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt
    Text: Status List Date:Sept. 2010 Compliance status of RoHS directive C:Compliant S.C:Compliant N:Non compliant Included RoHS exemption substance Production Status M:Mass production W:Working sample D:Discontinued High-Voltage High-Power Series Electrical Characteristics


    Original     		PDF MBN1200E17D MBN1600E17D MBN1800E17D KS10004 mbm150gr12 MBN1200D33A C2E1 MBM300GS12A 5252 F 1002 MDN1200D33 m8nd mbm200js12ew MBM800E17D mbn1200e25c igbt

    C2E1

    Abstract: MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12
    Text: ステータスリスト 2010.09 【ＲｏＨＳ対応：対応詳細は担当窓口へお問合せ下さい。 】 Ｃ：適合 Ｓ.Ｃ：適合 Ｎ：未対応 （但し適用除外項目物質を含有） 【ステータス】 Ｍ：量産品 Ｗ：ＷＳ


    Original     		PDF MBN1200E17D MBN1600E17D MBN1800E17D MBN1800E17DD MBN2400E17D MBN1200E17E 12-Fast-on KS10003 C2E1 MDN1200D33 MBN1200D33A mbm150gr12 MBM300GS12A MBN1200E25C MBM500E33E2 MBM300GS12AW MBL400e MBM300GR12