MIFARE DESFire
Abstract: No abstract text available
Text: BUK9K29-100E Dual N-channel TrenchMOS logic level FET 28 August 2012 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9K29-100E
LFPAK56D
MIFARE DESFire
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HZG469
Abstract: PHN203
Text: PHN203 Dual N-channel TrenchMOS logic level FET Rev. 03 — 26 January 2004 M3D315 Product data 1. Product profile 1.1 Description Dual logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
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PHN203
M3D315
OT96-1
HZG469
PHN203
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Untitled
Abstract: No abstract text available
Text: LF PA K 56D BUK9K17-60E Dual N-channel 60 V, 17 mΩ logic level MOSFET 19 March 2014 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
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BUK9K17-60E
LFPAK56D
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LFPAK56
Abstract: No abstract text available
Text: BUK7K5R1-30E Dual N-channel TrenchMOS standard level FET 23 July 2012 Product data sheet 1. Product profile 1.1 General description Dual standard level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK7K5R1-30E
LFPAK56D
LFPAK56
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96E840
Abstract: No abstract text available
Text: LF PA K 56D BUK9K6R8-40E Dual N-channel 40 V, 7.2 mΩ logic level MOSFET 5 December 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
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BUK9K6R8-40E
LFPAK56D
96E840
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91840E
Abstract: S/91840E
Text: LF PA K 56D BUK9K18-40E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9K18-40E
LFPAK56D
91840E
S/91840E
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Untitled
Abstract: No abstract text available
Text: LF PA K 56D BUK9K52-60E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9K52-60E
LFPAK56D
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PHKD3NQ10T
Abstract: No abstract text available
Text: PHKD3NQ10T Dual N-channel TrenchMOS standard level FET Rev. 02 — 16 December 2010 Product data sheet 1. Product profile 1.1 General description Dual standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for
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PHKD3NQ10T
PHKD3NQ10T
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Untitled
Abstract: No abstract text available
Text: LF PA K 56D BUK7K17-60E Dual N-channel 60 V, 14 mΩ standard level MOSFET 10 December 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to
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BUK7K17-60E
LFPAK56D
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Untitled
Abstract: No abstract text available
Text: LF PA K 56D BUK7K35-60E Dual N-channel 60 V, 30 mΩ standard level MOSFET 15 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to
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BUK7K35-60E
LFPAK56D
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Untitled
Abstract: No abstract text available
Text: BUK9K45-100E Dual N-channel TrenchMOS logic level FET 23 July 2012 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9K45-100E
LFPAK56D
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Untitled
Abstract: No abstract text available
Text: BUK9K6R2-40E Dual N-channel TrenchMOS logic level FET 19 July 2012 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9K6R2-40E
LFPAK56D
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Untitled
Abstract: No abstract text available
Text: BUK9K89-100E Dual N-channel TrenchMOS logic level FET 23 July 2012 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9K89-100E
LFPAK56D
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PHKD6N02LT
Abstract: No abstract text available
Text: PHKD6N02LT Dual N-channel TrenchMOS logic level FET Rev. 03 — 19 November 2009 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PHKD6N02LT
PHKD6N02LT
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Untitled
Abstract: No abstract text available
Text: LF PA K 56D BUK7K6R8-40E Dual N-channel TrenchMOS standard level FET 19 March 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK7K6R8-40E
LFPAK56D
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LFPAK56D
Abstract: No abstract text available
Text: BUK7K25-40E Dual N-channel TrenchMOS standard level FET 5 September 2012 Product data sheet 1. Product profile 1.1 General description Dual standard level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK7K25-40E
LFPAK56D
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PHKD6N02LT
Abstract: No abstract text available
Text: PHKD6N02LT Dual N-channel TrenchMOS logic level FET Rev. 04 — 27 April 2010 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PHKD6N02LT
PHKD6N02LT
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Untitled
Abstract: No abstract text available
Text: LF PA K 56D BUK7K8R7-40E Dual N-channel 40 V, 8.5 mΩ standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to
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BUK7K8R7-40E
LFPAK56D
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Untitled
Abstract: No abstract text available
Text: SO 8 PHKD13N03LT Dual N-channel TrenchMOS logic level FET Rev. 4 — 22 November 2011 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PHKD13N03LT
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Untitled
Abstract: No abstract text available
Text: BUK9K29-100E Dual N-channel TrenchMOS logic level FET 28 August 2012 Product data sheet 1. Product profile 1.1 General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9K29-100E
LFPAK56D
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LFPAK56D
Abstract: No abstract text available
Text: BUK7K5R6-30E Dual N-channel TrenchMOS standard level FET 23 July 2012 Product data sheet 1. Product profile 1.1 General description Dual standard level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK7K5R6-30E
LFPAK56D
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Untitled
Abstract: No abstract text available
Text: LF PA K 56D BUK7K5R1-30E Dual N-channel TrenchMOS standard level FET 19 April 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK7K5R1-30E
LFPAK56D
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LFPAK56D
Abstract: BUK9K35-60E defect ppm
Text: LF PA K 56D BUK9K35-60E Dual N-channel TrenchMOS logic level FET 23 April 2013 Product data sheet 1. General description Dual logic level N-channel MOSFET in a LFPAK56D package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use
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BUK9K35-60E
LFPAK56D
BUK9K35-60E
defect ppm
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Untitled
Abstract: No abstract text available
Text: LF PA K 56D BUK7K6R2-40E Dual N-channel 40 V, 5.8 mΩ standard level MOSFET 6 November 2013 Product data sheet 1. General description Dual standard level N-channel MOSFET in an LFPAK56D Dual Power-SO8 package using TrenchMOS technology. This product has been designed and qualified to
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BUK7K6R2-40E
LFPAK56D
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