BUK9728-55A
Abstract: No abstract text available
Text: BUK9728-55A TrenchMOS logic level FET Rev. 01 — 13 Feb 2001 Product specification M3D308 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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BUK9728-55A
M3D308
BUK9728-55A
OT186A
O-220F)
OT186A,
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BUK9735-55A
Abstract: m6015
Text: BUK9735-55A N-channel TrenchMOS logic level FET Rev. 02 — 10 June 2004 M3D308 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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Original
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BUK9735-55A
M3D308
BUK9735-55A
OT186A
O-220F)
OT186A,
m6015
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PDF
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BUT12AX
Abstract: BUT12
Text: BUT12AX Silicon diffused power transistor Rev. 01 — 16 June 2004 Product data M3D308 1. Product profile 1.1 Description High voltage, high speed, NPN power transistor in a plastic package. 1.2 Features • Isolated package ■ Fast switching. 1.3 Applications
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BUT12AX
M3D308
OT186A
O-220F)
MBB008
MBK110
OT186
BUT12AX
BUT12
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PDF
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WATKINS JOHNSON mixer
Abstract: vari-l 1785 TETRA etch magnum microwave Magnum Microwave mixer BD256 WATKINS JOHNSON design of Circular Patch Antenna in ISM Band Avantek mixer BPD5-0767-072SA
Text: There is a new leader and source for your RF & microwave systems and components … Spectrum Microwave. Combining the people, products and technologies from FSY Microwave, Salisbury Engineering, Q-Bit, Magnum Microwave, Radian Technologies and Amplifonix into a single
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12915
Abstract: PHX18NQ11T
Text: PHX18NQ11T N-channel TrenchMOS standard level FET Rev. 01 — 13 February 2004 M3D308 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using TrenchMOS™ technology.
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Original
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PHX18NQ11T
M3D308
OT186A
O-220F)
12915
PHX18NQ11T
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PDF
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BUK9728-55A
Abstract: No abstract text available
Text: BUK9728-55A N-channel TrenchMOS logic level FET Rev. 02 — 10 June 2004 M3D308 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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Original
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BUK9728-55A
M3D308
BUK9728-55A
OT186A
O-220F)
OT186A,
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PDF
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BUK7735-55A
Abstract: No abstract text available
Text: BUK7735-55A N-channel TrenchMOS standard level FET Rev. 02 — 7 June 2004 Product data M3D308 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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Original
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BUK7735-55A
M3D308
BUK7735-55A
OT186A
O-220F)
OT186A,
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PDF
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C2328
Abstract: BUK7728-55A
Text: BUK7728-55A N-channel TrenchMOS standard level FET Rev. 02 — 7 June 2004 M3D308 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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Original
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BUK7728-55A
M3D308
BUK7728-55A
OT186A
O-220F)
OT186A,
C2328
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PDF
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Untitled
Abstract: No abstract text available
Text: BUK7720-55A TrenchMOS standard level FET Rev. 01 — 19 Feb 2001 Product specification M3D308 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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Original
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BUK7720-55A
M3D308
BUK7720-55A
OT186A
O-220F)
OT186A,
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PDF
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Untitled
Abstract: No abstract text available
Text: BUK7735-55A TrenchMOS standard level FET Rev. 01 — 15 February 2001 Product specification M3D308 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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Original
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BUK7735-55A
M3D308
BUK7735-55A
OT186A
O-220F)
OT186A,
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PDF
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PHX8NQ11T
Abstract: 03aj01
Text: PHX8NQ11T N-channel TrenchMOS standard level FET Rev. 01 — 14 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology. 1.2 Features
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PHX8NQ11T
OT186A
O-220F)
PHX8NQ11T
03aj01
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PDF
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PHX3055E
Abstract: No abstract text available
Text: PHX3055E TrenchMOS standard level FET Rev. 03 — 18 March 2002 Product data M3D308 1. Description N-channel standard level field-effect power transistor in a full pack using TrenchMOS™1 technology. Product availability: PHX3055E in SOT186A Isolated TO-220 .
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Original
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PHX3055E
M3D308
PHX3055E
OT186A
O-220)
OT186A,
MBB076
MBK110
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PDF
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BUK9775-55A
Abstract: No abstract text available
Text: BUK9775-55A N-channel TrenchMOS logic level FET Rev. 02 — 10 June 2004 M3D308 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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Original
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BUK9775-55A
M3D308
BUK9775-55A
OT186A
O-220F)
OT186A,
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PDF
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PHX27NQ11T
Abstract: No abstract text available
Text: PHX27NQ11T N-channel TrenchMOS standard level FET Rev. 01 — 14 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology.
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PHX27NQ11T
OT186A
O-220F)
PHX27NQ11T
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PHX34NQ11T
Abstract: No abstract text available
Text: PHX34NQ11T N-channel TrenchMOS standard level FET Rev. 01 — 13 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology.
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PHX34NQ11T
OT186A
O-220F)
PHX34NQ11T
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PDF
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BUK7720-55A
Abstract: 03nc65 03nc60
Text: BUK7720-55A N-channel TrenchMOS standard level FET Rev. 02 — 7 June 2004 M3D308 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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Original
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BUK7720-55A
M3D308
BUK7720-55A
OT186A
O-220F)
OT186A,
03nc65
03nc60
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PDF
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BUK7775-55A
Abstract: No abstract text available
Text: BUK7775-55A TrenchMOS standard level FET Rev. 01 — 15 February 2001 Product specification M3D308 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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Original
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BUK7775-55A
M3D308
BUK7775-55A
OT186A
O-220F)
OT186A,
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PDF
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BUK9735-55A
Abstract: M3D308
Text: BUK9735-55A TrenchMOS logic level FET Rev. 01 — 15 February 2001 Product specification M3D308 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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Original
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BUK9735-55A
M3D308
BUK9735-55A
OT186A
O-220F)
OT186A,
M3D308
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PDF
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c2328
Abstract: BUK7728-55A MBK110
Text: BUK7728-55A TrenchMOS standard level FET Rev. 01 — 13 February 2001 Product specification M3D308 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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Original
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BUK7728-55A
M3D308
BUK7728-55A
OT186A
O-220F)
OT186A,
c2328
MBK110
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PDF
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PHX45NQ11T
Abstract: No abstract text available
Text: PHX45NQ11T N-channel TrenchMOS standard level FET Rev. 01 — 17 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology.
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Original
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PHX45NQ11T
OT186A
O-220F)
PHX45NQ11T
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PDF
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PHX20N06T
Abstract: 12834
Text: PHX20N06T N-channel TrenchMOS standard level FET Rev. 01 — 16 February 2004 Product data M3D308 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a fully isolated plastic package using TrenchMOS™ technology.
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Original
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PHX20N06T
M3D308
OT186A
O-220F)
PHX20N06T
12834
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PDF
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PHX23NQ11T
Abstract: TO-220F JEDEC
Text: PHX23NQ11T N-channel TrenchMOS standard level FET Rev. 01 — 14 May 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a fully isolated encapsulated plastic package using TrenchMOS™ technology.
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Original
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PHX23NQ11T
OT186A
O-220F)
PHX23NQ11T
TO-220F JEDEC
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PDF
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phx7nq60e
Abstract: PHP7NQ60E
Text: PHP7NQ60E; PHX7NQ60E N-channel enhancement mode field-effect transistor Rev. 01 — 20 August 2002 Product data 1. Description N-channel, enhancement mode field-effect power transistor. Product availability: PHP7NQ60E in TO-220AB SOT78 PHX7NQ60E in isolated TO-220AB.
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Original
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PHP7NQ60E;
PHX7NQ60E
PHP7NQ60E
O-220AB
PHX7NQ60E
O-220AB.
O-220AB
O-220AB,
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PDF
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BUK7775-55A
Abstract: No abstract text available
Text: BUK7775-55A N-channel TrenchMOS standard level FET Rev. 02 — 7 June 2004 M3D308 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology, featuring very low on-state resistance.
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Original
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BUK7775-55A
M3D308
BUK7775-55A
OT186A
O-220F)
OT186A,
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PDF
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