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    MB85RS256A Price and Stock

    KAGA FEI America Inc MB85RS256APNF-G-JNE1

    IC FRAM 256KBIT SPI 25MHZ 8SOP
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    DigiKey MB85RS256APNF-G-JNE1 Tray
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    KAGA FEI America Inc MB85RS256APNF-G-JNERE1

    IC FRAM 256KBIT SPI 25MHZ 8SOP
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    DigiKey MB85RS256APNF-G-JNERE1 Reel
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    FUJITSU Limited MB85RS256APNF-G-JNE1

    Fram, 256K, Spi, 3V, 8Sop; Memory Type:Fram; Memory Size:256Kbit; Nvram Memory Configuration:32K X 8Bit; Ic Interface Type:Spi; Access Time:-; Memory Case Style:Soic; No. Of Pins:8Pins; Supply Voltage Min:3V; Supply Voltage Max:3.6V;rohs Compliant: Yes |Fujitsu MB85RS256APNF-G-JNE1
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    Newark MB85RS256APNF-G-JNE1 Bulk 1
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    NexGen Digital MB85RS256APNF-G-JNE1 1
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    FUJITSU Semiconductor Limited MB85RS256APNF-G-JNERE1

    EOL-256bit FRAM,SPI,SOP8,T&R
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    Symmetry Electronics MB85RS256APNF-G-JNERE1 1,500
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    MB85RS256A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    MB85RS256APNF-G-JNE1 Fujitsu Memory, Integrated Circuits (ICs), IC FRAM 256KBIT 25MHZ 8SOP Original PDF
    MB85RS256APNF-G-JNERE1 FUJITSU Semiconductor IC FRAM 256KBIT SPI 25MHZ 8SOP Original PDF

    MB85RS256A Datasheets Context Search

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    MB85RS256A

    Abstract: DS501 mb85rs
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-0v01-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.


    Original     		PDF DS501-00007-0v01-E MB85RS256A MB85RS256A DS501 mb85rs

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00007-4v0-E FRAM MB85RS256A MB85RS256A is a 256K-bits FRAM LSI with serial interface SPI , using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory, it is suitable for the log management and the storage of the


    Original     		PDF NP501-00007-4v0-E MB85RS256A MB85RS256A 256K-bits

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-4v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00007-4v0-E MB85RS256A MB85RS256A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-2v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00007-2v0-E MB85RS256A MB85RS256A

    MB85RS256APNF

    Abstract: MB85RS256APN MB85RS256APNF-G-JNERE1
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-1v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00007-1v0-E MB85RS256A MB85RS256A MB85RS256APNF MB85RS256APN MB85RS256APNF-G-JNERE1

    RS256A

    Abstract: MB85RS256APNF-G-JNERE1
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-3v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00007-3v0-E MB85RS256A MB85RS256A RS256A MB85RS256APNF-G-JNERE1

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-6v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00007-6v0-E MB85RS256A MB85RS256A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-5v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00007-5v0-E MB85RS256A MB85RS256A

    RS256A

    Abstract: MB85RS256APNF MB85RS256APNF-G-JNERE1 MB85RS256APNF-G-JNE1
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-5v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00007-5v0-E MB85RS256A MB85RS256A RS256A MB85RS256APNF MB85RS256APNF-G-JNERE1 MB85RS256APNF-G-JNE1

    Untitled

    Abstract: No abstract text available
    Text: 2. Soldering the headers Before using your click board , make sure to solder 1x8 male headers to both left and right side of the board. Two 1x8 male headers are included with the board in the package. FRAM click 2 1 3 4. Essential features 1. Introduction


    Original     		PDF MB85RS256A