Untitled
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-10195-2E MEMORY CMOS 2 M x 8 BITS HYPER PAGE MODE DYNAMIC RAM MB81V17805A-60/60L/-70/70L CMOS 2,097,152 × 8 BITS Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V17805A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory
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DS05-10195-2E
MB81V17805A-60/60L/-70/70L
MB81V17805A
MB81V17805A
F9611
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f2804
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-10195-2E MEMORY CMOS 2 M x 8 BITS HYPER PAGE MODE DYNAMIC RAM MB81V17805A-60/60L/-70/70L CMOS 2,097,152 × 8 BITS Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V17805A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory
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DS05-10195-2E
MB81V17805A-60/60L/-70/70L
MB81V17805A
MB81V17805A
F9705
f2804
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Untitled
Abstract: No abstract text available
Text: August 1996 Edition 2.0 ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ – PRELIMINARY – ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ PRODUCT PROFILE SHEET MB81V17805A-60/70/60L/70L CMOS 2M X 8BIT HYPER PAGE MODE DYNAMIC RAM CMOS 2,097,152x 8BIT Hyper Page Mode Dynamic RAM The Fujitsu MB81V17805A is a fully decoded CMOS Dynamic RAM DRAM that contains
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MB81V17805A-60/70/60L/70L
MB81V17805A
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Untitled
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11230-4E MEMORY Unbuffered 2 M x 64 BIT HYPER PAGE MODE DRAM SO-DIMM MB8502E064AA-60/-70/-60L/-70L 144-pin, 2 M × 64 Bit Hyper Page Mode SO-DIMM, 3.3 V, 1-bank, 2 KR • DESCRIPTION The Fujitsu MB8502E064AA is a fully decoded, CMOS Dynamic Random Access Memory DRAM module
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DS05-11230-4E
MB8502E064AA-60/-70/-60L/-70L
144-pin,
MB8502E064AA
MB81V17805A
144-pin
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2MX16
Abstract: No abstract text available
Text: June 1996 Revision 1.0 DATA SHEET EDC2UV7282- 60/70 (J/T)G-S 16MByte (2M x 72) CMOS EDO DRAM Module - 3.3V (ECC) General Description The EDC2UV7282-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 72 bits, in a 168-pins, dual-in-line (DIMM) memory module with ECC.
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EDC2UV7282-
16MByte
16-megabyte
168-pins,
MB81V17805A-
MP-DRAMM-DS-20315-6/96
2MX16
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60JG
Abstract: MB81V17805A-60PJ
Text: May 1996 Revision 1.0 DATA SHEET DM2M2V645-60JG-IS 16MByte 2M x 64 CMOS EDO DRAM Module - 3.3V General Description The DM2M2V645-60JG-IS is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 64 bits, in a 168-pins, dual-in-line (DIMM) memory modules.
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DM2M2V645-60JG-IS
16MByte
DM2M2V645-60JG-IS
16-megabyte
168-pins,
MB81V17805A-60PJ
MP-DRAMM-DS-20309-5/96
60JG
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TGS 880
Abstract: No abstract text available
Text: September 1996 Revision 1.0 DATA SHEET EOB2UV6482- 60/70 TG-S 16MByte (2M x 64) CMOS EDO DRAM Module - 3.3V General Description TheEOB2UV6482-(60/70)TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 64 bits, in a 144-pins, small outline dual-in-line (SO DIMM) memory modules.
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EOB2UV6482-
16MByte
TheEOB2UV6482-
16-megabyte
144-pins,
MB81V17805A-
MP-DRAMM-DS-20392-9/96
TGS 880
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EDO DRAM
Abstract: No abstract text available
Text: August 1996 Revision 2.0 DATA SHEET EDC2UV6482- 60/70 (J/T)G-S 16MByte (2M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC2UV6482-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 64 bits, in a 168-pins, dual-in-line (DIMM) memory modules.
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EDC2UV6482-
16MByte
16-megabyte
168-pins,
MB81V17805A-
MP-DRAMM-DS-20309-8/96
EDO DRAM
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2MX16
Abstract: No abstract text available
Text: May 1996 Revision 1.0 DATA SHEET DM2M2V725- 60/70 (J/T)G-IS 16MByte (2M x 72) CMOS EDO DRAM Module - 3.3V (ECC) General Description The DM2M2V725-(60/70)(J/T)G-IS is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 72 bits, in a 168-pins, dual-in-line (DIMM) memory module with ECC.
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DM2M2V725-
16MByte
16-megabyte
168-pins,
MB81V17805A-
MP-DRAMM-DS-20315-5/96
2MX16
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74ABT16244
Abstract: DQ71
Text: November 1996 Revision 1.0 DATA SHEET EDC4BV7282- 60/70 (J/T)G-S 32MByte (4M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered General Description The EDC4BV7282-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 72 bits, in a 168-pins, dual-in-line (DIMM) memory module with ECC.
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EDC4BV7282-
32MByte
32-megabyte
168-pins,
MB81V17805A-
74ABT16244
MP-DRAMM-DS-20438-11/96
DQ71
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3654P
Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Text: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable
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16M-bit
64M-bit
68-pin)
88-pin)
MB98C81013-10
MB98C81123-10
MB98C81233-10
MB98C81333-10
3654P
DRAM 4464
jeida dram 88 pin
MB814260
4464 dram
1024M-bit
4464 64k dram
MB81G83222-008
mb814400a-70
4464 ram
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PJ 976
Abstract: No abstract text available
Text: September 1996 Revision 1.0 DATA SHEET EDC4UV6482- 60/70 (J/T)G-S 32MByte (4M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC4UV6482-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 64 bits, in a 168-pins, dual-in-line (DIMM) memory modules.
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EDC4UV6482-
32MByte
32-megabyte
168-pins,
MB81V17805A-
MP-DRAMM-DS-20388-9/96
PJ 976
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74ABT16244
Abstract: No abstract text available
Text: November 1996 Revision 1.0 DATA SHEET EDC2BV7282- 60/70 JG-S 16MByte (2M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered General Description The EDC2BV7282-(60/70)JG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized
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EDC2BV7282-
16MByte
16-megabyte
168-pins,
MB81V17805A-
74ABT16244
MP-DRAMM-DS-20436-11/96
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Untitled
Abstract: No abstract text available
Text: MEMORY CMOS 2 M x 8 BITS HYPER PAGE MODE DYNAMIC RAM MB81V17805A-60/60L/-70/70L CMOS 2,097,152 x 8 BITS Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V17805A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 8-bit increments. The MB81V17805A features a “hyper page” mode of operation whereby
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MB81V17805A-60/60L/-70/70L
MB81V17805A
MB81V17805A
C28058S-2C
MB81V17805A-60/-60L/-70/-70L
28-LEAD
FPT-28P-M14)
F28040S-1C
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATASHEET n e n , HnHnc « c D S 0 5 -1 0 1 9 5 -2 E MEMORY CMOS 2 M x 8 BITS HYPER PAGE MODE DYNAMIC RAM MB81V17805A-60/60L/-70/70L CMOS 2,097,152 x 8 BITS Hyper Page Mode Dynamic RAM • DESCRIPTION The Fujitsu MB81V17805A is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory
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MB81V17805A-60/60L/-70/70L
MB81V17805A
MB81V17805A
C28058S-2C
MB81V17805A-60/-60L/-70/-70L
28-LEAD
FPT-28P-M14)
F28040S-1C
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Untitled
Abstract: No abstract text available
Text: m a a m M m a a a a a a a a m i l l l i l I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I ^ UKÊ^ÊÊUÊHnKHÊm ÊÊÊ MB81V17805A-60/60L/-70/70L CMOS 2,097,152 x 8 BITS Hyper Page Mode Dynamic RAM
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MB81V17805A-60/60L/-70/70L
MB81V17805A
F9611
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Untitled
Abstract: No abstract text available
Text: -P R E L IM IN A R Y August 1996 Edition 2.0 = PRODUCT PROFILE S H E E T — FUJITSU MB81V 1 7 8 0 5 A -60/ 70/ 60U 70L CMOS 2M X 8BIT HYPER PAGE MODE DYNAMIC RAM CMOS 2,097,152x 8BIT Hyper Page Mode Dynamic RAM The Fujitsu MB81V17805A is a fully decoded CMOS Dynamic RAM DRAM that contains
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MB81V
MB81V17805A
28P-M14)
F28040S-1C
4T75b
0D2D47L
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8502E
Abstract: it 8502e
Text: MEMORY Unbuffered 2 M X 64 BIT HYËER PAGE MODE DRAM SO-DIMM 0 064AA-60/-70/-60 144-pin, 2 M x 64 Bit Hyper Page Mode SO-DIMM, 3.3 V, 1-bank, 2 KR DESCRIPTION The Fujitsu MB8502E064AA is a fully decoded, CMOS Dynamic Random Access Memory DRAM module consisting ot eight MB81V17805A devices. The MB8502E064AA is optimized for those applications requiring
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064AA-60/-70/-60
144-pin,
MB8502E064AA
MB81V17805A
144-pin
8502E
it 8502e
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Untitled
Abstract: No abstract text available
Text: FUJITSU November 1996 Revision 1.0 DATA S H E E T - EDC4B V7282- 60/70 (J/T)G-S 32MByte (4M x 72) CMOS EDO DRAM Module 3.3 V (ECC), Buffered - General Description The EDC4BV7282-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module orga
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V7282-
32MByte
EDC4BV7282-
32-megabyte
168-pins,
MB81V17805A-
74ABT16244
168-pin
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Untitled
Abstract: No abstract text available
Text: MEMORY Unbuffered 2 M x 64 BIT . H Y P E R M B 8 5 2 P A < 3 E • E m Mw M 0 m D r % m i / i i A E M D l 0 6 4 A i C - i 5 0 L 7 C ï . Unbuffered, 2 M x 64 Bit Hyper Page Mode DIMM, 3.3 V, 1-bank, 2 KR DESCRIPTION The Fujitsu MB8502E064AC is a fully decoded, CMOS Dynamic Random Access Memory (DRAM) module
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MB8502E064AC
MB81V17805A
168-pin
F9803
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Untitled
Abstract: No abstract text available
Text: June 1996 Revision 1.0 " DATASH EET " - EDC2UV7282- 60/70 (J/T)G-S 16MByte (2M x 72) CMOS EDO DRAM Module - 3.3V (ECC) General Description The EDC2UV7282-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module orga
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EDC2UV7282-
16MByte
16-megabyte
168-pins,
MB81V17805A-
168-pin
cl75Li
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Untitled
Abstract: No abstract text available
Text: cP October 1996 Revision 1.0 FUJI' DATA SHEET - * EDC4U V7282- 60/70 (J/T)G-S 32MByte (4M x 72) CMOS EDO DRAM Module -3.3 V (ECC) General Description The EDC4UV7282-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module orga
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V7282-
32MByte
EDC4UV7282-
32-megabyte
168-pins,
MB81V17805A-
-DS-2041
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TGS 880
Abstract: No abstract text available
Text: FUJITSU September 1996 Revision 1.0 DATA SHEET - EOB2U V6482- 60/70 T G -S 16MByte (2Mx 64) CMOS EDO DRAM Module -3.3V General Description TheEOB2UV6482-(60/70)TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized
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V6482-
16MByte
TheEOB2UV6482-
16-megabyte
144-pins,
MB81V17805A-
TGS 880
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CMOS 4032
Abstract: 2448
Text: DRAM Modules 2 • DRAM Modules - Low Voltage Versions (CMOS) Vcc - +3.3V±0.3V, Ta=0°C to +70C 'C Organization (Wxb) Part Number Mounted Devices x number <Package> Operating Standby Mode (CMOS level) Package MB8501E064AA-60 MB8501E064AA-70 MB81V18165A x4
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MB81V18165A
MB81V16165A
144Pin
MB8501E064AA-60
MB8501E064AA-70
MB8501EQ64AA-60L
MB8501E064AA-70L
MB8501E064AB-60
MB8501E064AB-70
CMOS 4032
2448
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