Untitled
Abstract: No abstract text available
Text: November 1997 Revision 1.1 data sheet SOB2UL6484- 67/84/100 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SOB2UL6484-(67/84/100)T-S is a high performance, 16-megabyte synchronous, dynamic RAM module organized as 2M words by 64 bits, in a 144-pin, small outline dual-in-line memory module (SODIMM) package.
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SOB2UL6484-
16MByte
16-megabyte
144-pin,
MB81116822C-
100MHz)
84MHz)
MP-SDRAMM-DS-20558-11/97
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Untitled
Abstract: No abstract text available
Text: July 1997 Revision 1.0 data sheet SDC4UL7284- 67/84/100 T-S 32MByte (4M x 72) CMOS Synchronous DRAM Module - ECC General Description The SDC4UL7284-(67/84/100)T-S is a high performance, 32-megabyte synchronous, dynamic RAM module organized as 4M words by 72 bits, in a 168-pin, JEDEC ECC configuration, dual-in-line memory module (DIMM) package.
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SDC4UL7284-
32MByte
32-megabyte
168-pin,
MB81116822C-
100MHzinaccuracies.
MP-SDRAMM-DS-20567-7/97
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MB81116822C
Abstract: No abstract text available
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11121-1E MEMORY Un-buffered 2 M x 64 BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM 144-pin, 2 Clock, 1-bank, based on 2 M × 8 Bit SDRAMs with SPD, Low-power version
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DS05-11121-1E
0/-84/-67/-100L/-84L/-67L/-100S/-84S/-67S
144-pin,
MB8502S064CE
MB81116822C
144-pin
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3654P
Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Text: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable
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16M-bit
64M-bit
68-pin)
88-pin)
MB98C81013-10
MB98C81123-10
MB98C81233-10
MB98C81333-10
3654P
DRAM 4464
jeida dram 88 pin
MB814260
4464 dram
1024M-bit
4464 64k dram
MB81G83222-008
mb814400a-70
4464 ram
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Untitled
Abstract: No abstract text available
Text: July 1997 Revision 1.0 data sheet SDC2UL7284- 67/84/100 T-S 16MByte (2M x 72) CMOS Synchronous DRAM Module - ECC General Description The SDC2UL7284-(67/84/100)T-S is a high performance, 16-megabyte synchronous, dynamic RAM module organized as 2M words by 72 bits, in a 168-pin, JEDEC ECC Configuration, dual-in-line memory module (DIMM) package.
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SDC2UL7284-
16MByte
16-megabyte
168-pin,
MB81116822C-
100MHz)
12nsinaccuracies.
MP-SDRAMM-DS-20564-7/97
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Untitled
Abstract: No abstract text available
Text: July 1997 Revision 1.0 data sheet SDC2UL6484- 67/84/100 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SDC2UL6484-(67/84/100)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as 2M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.
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SDC2UL6484-
16MByte
16-megabtye
168-pin,
MB81116822C-
100MHz)
84MHz)
67MHz)
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Untitled
Abstract: No abstract text available
Text: MEMORY 2Mx84BIT SYNCHRONOUS DYNAMIC RAM SO-DIMM M 2SO64CE-100/-84/-67/-100L/-84 L/-67L/-100S/-84S/-67S 144-pin, 2 Clock, 1-bank, based on 2 M x 8 Bit SDRAMs with SPD, Low-power version DESCRIPTION The Fujitsu MB8502S064CE is a fully decoded, CMOS Synchronous Dynamic Random Access Memory
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2Mx84BIT
2SO64CE-1
00/-84/-67/-100L/-84
L/-67L/-1
00S/-84S/-67S
144-pin,
MB8502S064CE
MB81116822C
144-pin
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Untitled
Abstract: No abstract text available
Text: < p IITSU November 1997 Revision 1.1 data sheet SOB2UL6484- 67/84/100 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description The SOB2UL6484-(67/84/100)T-S is a high performance, 16-megabyte synchronous, dynamic RAM module organized as 2M words by 64 bits, in a 144-pin, small outline dual-in-line memory module (SODIMM) package.
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SOB2UL6484-
16MByte
16-megabyte
144-pin,
MB81116822C-
16MByte
67Mhz
84Mhz
100Mhz
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MB8508S064AE-100L
Abstract: MB8508S064AE
Text: SDRAM Modules 2 • Synchronous ORAM Modules Vcc= +3.3V±0.3V, Ta=0°C to +70°C Organization (Wx&) 2Mx72 Part Number Mounted Device Clock Access Access [Capacity) x Frequency CLK tank Time 1 Time 2 number max. max. (ns) max. (ns) «Package» (MHz) MB8502SQ72AG-1OQ
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MB81117822A
MB81117422A
2Mx72
MB8502SQ72AG-1OQ
MB8502S07217822A
2Mx64
144Pin
MB81116822C
4Mx64
MB8508S064AE-100L
MB8508S064AE
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15j100
Abstract: No abstract text available
Text: SDRAM 1 I Synchronous DRAM: SDRAM (CMOS) VCC= Organization (W * b) Part Number Clock Frequency max. (MHz) M B 81117421A-100 100[10] Access Time 1 Access Time 2 Access Time 3 max. (ns) max. (ns) max. (ns) + 3.3 V ± 0.3V , Ta= 0°C to +70 °C Power Consumption
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B81116822C-84L
MB81116822C-67L
MB811171621
MB811171622A-100
512kx16
B811171622A-84
MB811171622A-67
MB811161622C-100L
MB811161622C-84L
MB811161622C-67L
15j100
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