035H
Abstract: MB 39A 25 diodes 39a transistor WW 179
Text: PD -95225 IRG4PC50FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4PC50FDPbF
O-247AC
035H
MB 39A 25
diodes 39a
transistor WW 179
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Untitled
Abstract: No abstract text available
Text: PD - 97004 IRFB4233PbF PDP SWITCH Features l Advanced process technology l Key parameters optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE rating to reduce power dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
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IRFB4233PbF
O-220AB
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD - 97004 IRFB4233PbF PDP SWITCH Features l Advanced process technology l Key parameters optimized for PDP Sustain, Energy Recovery and Pass Switch Applications l Low EPULSE rating to reduce power dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications
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IRFB4233PbF
O-220AB
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400v 20A ultra fast recovery diode
Abstract: IGBT WE 20 NE 50 Z 600v 10A ultra fast recovery diode fast recovery diode 1000v 10A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST irf 100v 200A IRG4PC50 irg4pc50fd IRG4PC50FDPbF marking code 39a
Text: PD -95225 IRG4PC50FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4PC50FDPbF
O-247AC
400v 20A ultra fast recovery diode
IGBT WE 20 NE 50 Z
600v 10A ultra fast recovery diode
fast recovery diode 1000v 10A
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST
irf 100v 200A
IRG4PC50
irg4pc50fd
IRG4PC50FDPbF
marking code 39a
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Untitled
Abstract: No abstract text available
Text: PD -95225 IRG4PC50FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4PC50FDPbF
O-247AC
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IGBT WE 20 NE 50 Z
Abstract: IRG4PC50FDPBF 035H
Text: PD -95225 IRG4PC50FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies 1-5 kHz in hard switching, >20 kHz in resonant mode . • Generation 4 IGBT design provides tighter
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IRG4PC50FDPbF
O-247AC
IGBT WE 20 NE 50 Z
IRG4PC50FDPBF
035H
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60v 39a to220
Abstract: No abstract text available
Text: PD-95660 IRL3302PbF l l l l l l Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150°C Operating Temperature Fast Switching Lead-Free HEXFET Power MOSFET D VDSS = 20V RDS on = 0.020Ω G Description These HEXFET Power MOSFETs were designed
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PD-95660
IRL3302PbF
O-220
O-220AB
60v 39a to220
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60v 39a to220
Abstract: No abstract text available
Text: PD-95660 IRL3302PbF l l l l l l Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150°C Operating Temperature Fast Switching Lead-Free HEXFET Power MOSFET D VDSS = 20V RDS on = 0.020Ω G Description These HEXFET Power MOSFETs were designed
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PD-95660
IRL3302PbF
O-220
O-220AB.
O-220AB
60v 39a to220
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Untitled
Abstract: No abstract text available
Text: PD- 95587 IRL3302SPbF HEXFET Power MOSFET D RDS on = 0.020Ω G Lead-Free www.irf.com VDSS = 20V S ID = 39A 1 07/20/04 IRL3302SPbF Ω 2 www.irf.com IRL3302SPbF www.irf.com 3 IRL3302SPbF 4 www.irf.com IRL3302SPbF www.irf.com 5 IRL3302SPbF 6 www.irf.com
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IRL3302SPbF
EIA-418.
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HEXFET D2PAK
Abstract: D2Pak Package dimensions diode marking code 421
Text: PD- 95587 IRL3302SPbF HEXFET Power MOSFET D RDS on = 0.020Ω G Lead-Free www.irf.com VDSS = 20V S ID = 39A 1 07/20/04 IRL3302SPbF Ω 2 www.irf.com IRL3302SPbF www.irf.com 3 IRL3302SPbF 4 www.irf.com IRL3302SPbF www.irf.com 5 IRL3302SPbF 6 www.irf.com
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IRL3302SPbF
EIA-418.
HEXFET D2PAK
D2Pak Package dimensions
diode marking code 421
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Untitled
Abstract: No abstract text available
Text: PD-95935A IRFB3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G S VDSS RDS on typ. max. ID
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PD-95935A
IRFB3507PbF
O-220AB
O-220AB
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PD-95660
Abstract: No abstract text available
Text: PD-95660 IRL3302PbF l l l l l l Advanced Process Technology Optimized for 4.5V Gate Drive Ideal for CPU Core DC-DC Converters 150°C Operating Temperature Fast Switching Lead-Free HEXFET Power MOSFET D VDSS = 20V RDS on = 0.020Ω G Description These HEXFET Power MOSFETs were designed
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PD-95660
IRL3302PbF
O-220
O-220AB.
O-220AB
PD-95660
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19-AF
Abstract: AN-994
Text: PD - 95935A IRFB3507PbF IRFS3507PbF IRFSL3507PbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free HEXFET Power MOSFET D G
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5935A
IRFB3507PbF
IRFS3507PbF
IRFSL3507PbF
O-262
O-220AB
Curren26)
19-AF
AN-994
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AN-994
Abstract: IRFZ46N IRFZ46NL IRFZ46NS
Text: PD - 95158 Advanced Process Technology Surface Mount IRFZ46NS l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRFZ46NSPbF IRFZ46NLPbF l HEXFET Power MOSFET l D VDSS = 55V
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IRFZ46NS)
IRFZ46NL)
IRFZ46NSPbF
IRFZ46NLPbF
AN-994
IRFZ46N
IRFZ46NL
IRFZ46NS
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IRFZ48V
Abstract: No abstract text available
Text: PD-94834 IRFIZ48VPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free HEXFET Power MOSFET D VDSS = 60V
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PD-94834
IRFIZ48VPbF
O-220
I840G
IRFZ48V
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AN-994
Abstract: IRL1404L IRL1404S
Text: PD - 95148 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL1404SPbF IRL1404LPbF l HEXFET Power MOSFET l D VDSS = 40V RDS on = 0.004Ω
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IRL1404SPbF
IRL1404LPbF
AN-994.
AN-994
IRL1404L
IRL1404S
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Untitled
Abstract: No abstract text available
Text: PD - 94952 IRFZ46NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 55V l RDS on = 16.5mΩ G ID = 53A
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IRFZ46NPbF
O-220
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Untitled
Abstract: No abstract text available
Text: PD - 95148 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL1404SPbF IRL1404LPbF l HEXFET Power MOSFET l D VDSS = 40V RDS on = 0.004Ω
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IRL1404SPbF
IRL1404LPbF
AN-994.
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Untitled
Abstract: No abstract text available
Text: PD - 94952 IRFZ46NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 55V l RDS on = 16.5mΩ G ID = 53A
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IRFZ46NPbF
O-220
al220AB
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95A 640
Abstract: AN-994 IRL1404L IRL1404S
Text: PD - 95148 Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL1404SPbF IRL1404LPbF l HEXFET Power MOSFET l D VDSS = 40V RDS on = 0.004Ω
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IRL1404SPbF
IRL1404LPbF
AN-994.
95A 640
AN-994
IRL1404L
IRL1404S
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Untitled
Abstract: No abstract text available
Text: PD - 95158 Advanced Process Technology Surface Mount IRFZ46NS l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRFZ46NSPbF IRFZ46NLPbF l HEXFET Power MOSFET l D VDSS = 55V
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IRFZ46NS)
IRFZ46NL)
IRFZ46NSPbF
IRFZ46NLPbF
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AN-994
Abstract: IRFZ46N IRFZ46NL IRFZ46NS
Text: PD - 95158 Advanced Process Technology Surface Mount IRFZ46NS l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRFZ46NSPbF IRFZ46NLPbF l HEXFET Power MOSFET l D VDSS = 55V
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IRFZ46NS)
IRFZ46NL)
IRFZ46NSPbF
IRFZ46NLPbF
AN-994
IRFZ46N
IRFZ46NL
IRFZ46NS
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transistor IRFZ46N
Abstract: AN-994 IRFZ46N IRFZ46NL IRFZ46NS
Text: PD - 95158 Advanced Process Technology Surface Mount IRFZ46NS l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRFZ46NSPbF IRFZ46NLPbF l HEXFET Power MOSFET l D VDSS = 55V
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IRFZ46NS)
IRFZ46NL)
IRFZ46NSPbF
IRFZ46NLPbF
transistor IRFZ46N
AN-994
IRFZ46N
IRFZ46NL
IRFZ46NS
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ed 89a
Abstract: AN-994 IRL3705N IRL3705NL IRL3705NS ED 89A marking code
Text: PD - 95381 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRL3705NS l Low-profile through-hole (IRL3705NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL3705NSPbF IRL3705NLPbF l l HEXFET Power MOSFET
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IRL3705NS)
IRL3705NL)
IRL3705NSPbF
IRL3705NLPbF
EIA-418.
ed 89a
AN-994
IRL3705N
IRL3705NL
IRL3705NS
ED 89A marking code
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