Untitled
Abstract: No abstract text available
Text: FTS512K8L LOW POWER 512K x 8 CMOS STATIC RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —32-Pin 600 mil Plastic and Ceramic DIP —32-Pin 445 mil SOP —32-Pin TSOP II
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FTS512K8L
--32-Pin
FTS512512K8L
Oct-05
Nov-06
Dec-06
May-07
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Untitled
Abstract: No abstract text available
Text: PYX28C64 8K x 8 EEPROM FEATURES Access Times of 200, 250, 300 and 350 ns Software Data Protection Single 5V±10% Power Supply Fully TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: 10,000 or 100,000 Cycles Low Power CMOS: - 60 mA Active Current
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PYX28C64
32-Pin
28-Pin
PYX28C64
64-byte
OM101
EEPROM101
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tpc8118
Abstract: SVI 2004 A toshiba f5d tpc8026 tpc8109 oks2c toshiba f5b TPC8028 MARKING TPC8107 SOP8 MOSFET MARKING STP
Text: Power MOSFETs 低耐圧低Ronシリーズ 2007年 2月 Copyright 2007, Toshiba Corporation. 低Ron 低耐圧U-MOSの技術トレンド 30 2 Ron*A (mOhm*mm ) 25 20 15 10 Pch Nch 5 Pch IV Nch III Pch V Nch IV Pch VI Nch V or VI 2007年 2月 2 リチウムイオン電池保護回路用MOSFETトレンドマップ
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TPCM8001-H
TPCM8003-H
TPCM8002-H
2Q/2007
TPCM8102
1Q/2007
tpc8118
SVI 2004 A
toshiba f5d
tpc8026
tpc8109
oks2c
toshiba f5b
TPC8028
MARKING TPC8107 SOP8
MOSFET MARKING STP
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DA47
Abstract: DA48 6A05
Text: 6A05 THRU 6A10 Standard Rectifier YENYO Voltage Range 50 to 1000 V Current 6.0 Ampere Features ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability Mechanical Data ¬ Case: Molded plastic R-6
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MIL-STD-202
300uS
50mVp-p
MAY-07
DA47
DA48
6A05
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Untitled
Abstract: No abstract text available
Text: P4C1048L LOW POWER 512K x 8 CMOS STATIC RAM FEATURES Common Data I/O Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Automatic Power Down Packages —32-Pin 600 mil Plastic and Ceramic DIP —32-Pin 445 mil SOP VCC Current
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P4C1048L
32-Pin
P4C1048L
SRAM129
SRAM129
Oct-05
Nov-06
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capacitor 10uF 50V
Abstract: SMD resistors poscap 330uf 6.3v capacitor 330uF 50V DO3316P-153 Tantalum Capacitor 25v SANYO POSCAP 330uF 10UF tantalum 6TPB330M
Text: STMicroelectronics: DC-DC EVAL5973D QTY 1 1 1 1 1 1 1 Reference C1 C2 C3 C4 R1 R2 R3 Mfg P/n C3225X5R1E106M POSCAP 6TPB330M C1206C221J5GAC C1206C223K5RAC L1 Part Description 10uF 25V ceramic capacitor 330uF 6.3V tantalum capacitor 220pF 5% 50V ceramic capacitor
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EVAL5973D
C3225X5R1E106M
6TPB330M
C1206C221J5GAC
C1206C223K5RAC
330uF
220pF
L5973D
May-07
STPS2L25U
capacitor 10uF 50V
SMD resistors
poscap 330uf 6.3v
capacitor 330uF 50V
DO3316P-153
Tantalum Capacitor 25v
SANYO POSCAP
10UF tantalum
6TPB330M
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IC 74115
Abstract: free transistor and ic equivalent data MARKING CODE 42 free transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4240V 40 V low VCEsat NPN transistor Product specification 2003 Jan 30 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4240V FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat
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M3D744
PBSS4240V
01-May-99)
IC 74115
free transistor and ic equivalent data
MARKING CODE 42
free transistor
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ST 9340
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PSSI3120CA PECL termination Product specification 2001 Jul 19 Philips Semiconductors Product specification PECL termination PSSI3120CA PINNING - SOT23 FEATURES • Single channel PECL termination in a three pin SOT23
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M3D088
PSSI3120CA
PSSI3120CA
MGC421
di20CA
13-Feb-03)
ST 9340
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MOSFET TRANSISTOR SMD MARKING CODE A1
Abstract: MOSFET TRANSISTOR SMD MARKING A1 transistor smd code marking KEY catalog mosfet Transistor smd SOT426 MOSFET TRANSISTOR SMD MARKING CODE 11
Text: Philips Semiconductors Product specification Logic level TOPFET SMD version of BUK125-50L DESCRIPTION Monolithic logic level protected power MOSFET using TOPFET2 technology assembled in a 5 pin surface mounting plastic package. APPLICATIONS General purpose switch for
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BUK125-50L
BUK136-50L
29-May-02)
MOSFET TRANSISTOR SMD MARKING CODE A1
MOSFET TRANSISTOR SMD MARKING A1
transistor smd code marking KEY
catalog mosfet Transistor smd
SOT426
MOSFET TRANSISTOR SMD MARKING CODE 11
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transistor smd code marking KEY
Abstract: MOSFET TRANSISTOR SMD MARKING CODE vl
Text: Philips Semiconductors Product specification TOPFET high side switch SMD version BUK216-50YT QUICK REFERENCE DATA DESCRIPTION Monolithic single channel high side protected power switch in TOPFET2 technology assembled in a 5 pin plastic surface mount package.
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BUK216-50YT
29-May-02)
transistor smd code marking KEY
MOSFET TRANSISTOR SMD MARKING CODE vl
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smd schottky diode sot363
Abstract: smd code 22 SOT363 marking E1 sot363 SMD DIODE MARKING CODE 101 diode SMD MARKING CODE S sot363 marking code cd PHILIPS DIODE smd marking A1 A SOT363 marking CODE E1 smd diode E1
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 1PS88SB82 Schottky barrier triple diode Product specification Supersedes data of 2001 Feb 16 2003 Apr 11 Philips Semiconductors Product specification Schottky barrier triple diode 1PS88SB82 FEATURES
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MBD128
1PS88SB82
OT363
SC-88)
1PS88SB82
ca1PS88SB82
smd schottky diode sot363
smd code 22 SOT363
marking E1 sot363
SMD DIODE MARKING CODE 101
diode SMD MARKING CODE S
sot363 marking code cd
PHILIPS DIODE smd marking A1
A SOT363
marking CODE E1
smd diode E1
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Untitled
Abstract: No abstract text available
Text: 1N6267. 1N6303A / 1.5KE6V8. 1.5KE440A 1N6267C.1N6303CA / 1.5KE6V8C.1.5KE440CA 1500W Unidirectional and Bidirectional Transient Voltage Suppressor Diodes DO201-AE Plastic Dimensions in mm. Peak Pulse Power Rating At 1ms. Exp. 1500 W Reverse
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1N6267.
1N6303A
5KE440A
1N6267C.
1N6303CA
5KE440CA
DO201-AE
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Untitled
Abstract: No abstract text available
Text: P4KE 400W Unidirectional Transient Voltage Suppressor Diodes DO-41 Plastic Dimensions in mm. Peak Pulse Power Rating At 1ms. Exp. 400 W R Glass passivated junction Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C.
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DO-41
May-07
100ns
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PYX28C64
Abstract: eeprom 1519B P5C164 EEPROM101
Text: PYX28C64 8K x 8 EEPROM FEATURES Access Times of 200, 250, 300 and 350 ns Software Data Protection Single 5V±10% Power Supply Fully TTL Compatible Inputs and Outputs Simple Byte and Page Write Endurance: 10,000 or 100,000 Cycles Low Power CMOS: - 60 mA Active Current
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PYX28C64
32-Pin
28-Pin
PYX28C64
64-byte
EEPROM101
EEPROM101
eeprom
1519B
P5C164
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMZ7 NPN/PNP general purpose transistors Product specification Supersedes data of 2001 Sep 25 2001 Nov 07 Philips Semiconductors Product specification NPN/PNP general purpose transistors PEMZ7 PINNING FEATURES • 300 mW total power dissipation
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M3D744
01-May-99)
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free transistor and ic equivalent data
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5240V 40 V low VCEsat PNP transistor Product specification 2003 Jan 30 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5240V FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat
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M3D744
PBSS5240V
01-May-99)
free transistor and ic equivalent data
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smd transistor marking C14
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1820-70 UHF power LDMOS transistor Product specification Supersedes data of 2001 Feb 12 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-70 PINNING FEATURES
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M3D379
BLF1820-70
BLF1820-70
MBK394
15-Aug-02)
smd transistor marking C14
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Untitled
Abstract: No abstract text available
Text: TH I S C D R AW I NG IS U N PU B LI SHED. COPYRIGHT - RELEASED BY TYCO ELE CTRONICS CORPORATION F OR ALL PUBLICATION RIGHTS L OC RE V I S I O N S D I ST RESERVED. LTR DESCRIPTION FIRST ISSUE A1 DWN DATE APVD |£*MAY07 DC T dB NOV09 KK AEG REVISED PER ECO-09-026495
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ECO-09-026495
MAY07
NOV09
UL94V-2
2-885000-I
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS U N P U B LIS H E D . COPYRIGHT RELEASED FOR PUBLICATION A LL RIGHTS BY TYCO ELECTRONICS CORPORATION. - , - LOC R ESERVED. REVISIONS D IST D LTR D E SC RIPTIO N A DATE 31 MAY07 RELEASED DWN APVD HH WK :0. 15 B + 0.1 5 + 0.1 5 CIRCUIT NO . 1 SIDE
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MAY07
31MAR2000
MAY2007
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Untitled
Abstract: No abstract text available
Text: REVISIONS REV 58.80 [2 .3 1 5 ] o I"- LED 2 LED 1 ^ 14 .3 [.5 6 3 ]* 3 = 42 .90 [1 .6 8 9 ] left RIGHT 20.70 [.8 1 5 ] FEB22,2012 L.CHAN B PROPOSAL DRAWING M AR08.2012 L.CHAN C PROPOSAL DRAWING MAY07.2013 L.CHAN ^ PIN NUMBERS SHOW FOR REFERENCE ONLY, IT DOES NOT
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FEB22
MAY07
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - L0C , - ALL RIGHTS RESERVED. DIST R E V IS IO N S DW p LTR DESCRIPTION A 94.1 4 + 0.9 5 D DATE DWN OH WK 0 4 MAY07 RELEASED APVD 1 6 .5 1 + 0 .2 5 D
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MAY07
37/xm
03MAY2007
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 4 TH IS D R A W IN G IS 2 U N P U B LIS H E D . RELEASED FOR ALL C O P Y R IG H T BY ^C O ELECTRONICS P U B LIC A TIO N R IG H TS REVISIONS RESERVED. G CORPORATION. LT R D E S C R IP T IO N N2 REV D PER ECR DATE 0 7-0 3 0 70 8 APVD JR 27DEC07 STAMP 6S AMP 2 2 - 1 8 * , APPRDX
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27DEC07
65mm2
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 1 T H IR D NOTES: I . M A T E R I A L S AND F I N I S H E S : BO D Y - B R A S S , G O L D P L A T I N G CONTACT - B E R Y L L I U M C OPPER, GOLD P L A T IN G INSULATOR - PTFE, NATURAL ELECTRICAL: A. I M P E D A N C E : 5 0 OHM B. D I E L E C T R I C W I T H S T A N D I N G V O L T AG E : 7 5 0 VRMS,
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17-Moy-07
I0605IAAB02GE5F
\IZ3\IZ3605IAI-O0l-3GT30G-50
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Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - , - RESERVED. C O R P O R A T IO N . D 6.00 CIRCUIT DIAGRAM 4 .1 0 C 1 .50 [.059] r= i 1.00 [.039] 2.20
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MAY07
FSM43SMJLTR
FSM43SMJL
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