79LV0832
Abstract: No abstract text available
Text: Documentation Change Notice Current Consumption Test Conditions Manufacturer: Manufacturer Product Effected: Document Number: Number Revision: Revision Date: Date Maxwell Technologies 79LV0832 Data Sheet 1004418 1 May 7, 2003 | Maxwell Technologies | 9244 Balboa Avenue, San Diego, CA 92123, United States |
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79LV0832
600uA.
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79LV0832
Abstract: No abstract text available
Text: Documentation Change Notice Additional Current Consumption Test Conditions Manufacturer: Manufacturer Product P roduct Effected: Document Number: Number Revision: Revision Date: Date Maxwell Technologies 79LV0832 Rev 6 1004418 2 May 29, 2003 | Maxwell Technologies | 9244 Balboa Avenue, San Diego, CA 92123, United States |
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79LV0832
600uA.
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Untitled
Abstract: No abstract text available
Text: 79LV0832 8 Megabit 256K x 32-Bit Low Voltage EEPROM MCM DESCRIPTION: • • • • Maxwell Technologies’ 79LV0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging
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79LV0832
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79LV0832
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79LV0832
Abstract: No abstract text available
Text: 79LV0832 8 Megabit 256K x 32-Bit Low Voltage EEPROM MCM DESCRIPTION: • • • • Maxwell Technologies’ 79LV0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK MCM packaging
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79LV0832
32-Bit)
32-bit
79LV0832
10rdering
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79LV0832
Abstract: Maxwell 79lv0832
Text: 79LV0832 Low Voltage 8 Megabit 256K x 32-Bit EEPROM MCM CE1 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 128K x 8 ADD CNTL CE2 I/O0-7 I/O8-15 I/016-23 I/O24-31 Memory Logic Diagram FEATURES: DESCRIPTION: • • • • Maxwell Technologies’ 79LV0832 multi-chip module (MCM)
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79LV0832
32-Bit)
I/016-23
79LV0832
32-bit
Maxwell 79lv0832
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79LV0832
Abstract: No abstract text available
Text: 79LV0832 8 Megabit 256K x 32-Bit Low Voltage EEPROM MCM DESCRIPTION: • 256k x 32-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects
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79LV0832
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DIN 1707
Abstract: No abstract text available
Text: 79LV0832 8 Megabit 256K x 32-Bit Low Voltage EEPROM MCM DESCRIPTION: • 256k x 32-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects
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79LV0832
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79LV0832
DIN 1707
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79LV0832
Abstract: No abstract text available
Text: 79LV0832 8 Megabit 256K x 32-Bit Low Voltage EEPROM MCM DESCRIPTION: • 256k x 32-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects
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79LV0832
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Untitled
Abstract: No abstract text available
Text: 79LV0832 8 Megabit 256K x 32-Bit Low Voltage EEPROM MCM DESCRIPTION: • 256k x 32-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects @ 25°C
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79LV0832
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79LV0832
Abstract: 79LV radiation hardened cpu
Text: 79LV0832 8 Megabit 256K x 32-Bit Low Voltage EEPROM MCM DESCRIPTION: • 256k x 32-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects
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79LV0832
32-Bit)
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79LV
radiation hardened cpu
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Abstract: No abstract text available
Text: 79LV0832 8 Megabit 256K x 32-Bit Low Voltage EEPROM MCM DESCRIPTION: • 256k x 32-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects
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79LV0832
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79LV0832
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28C011
Abstract: 28LV010 28C010 Maxwell Technologies 79C0832 79LV0408 79LV0832 HN58C1001 1mb eeprom
Text: APPLICATION NOTE Hitachi 1Mb EEPROM – Hitachi Die HN58C1001 Purpose Over the last several months several design applications questions have been asked regarding the Hitachi EEPROM. These questions have been to both clarify the datasheet specifications as well as obtain additional information not contained in the
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HN58C1001
28C010
28C011
79C0408
79C0832
28LV010
28LV011
79LV0408
79LV0832
28C011
28LV010
28C010
Maxwell Technologies
79C0832
79LV0408
79LV0832
HN58C1001
1mb eeprom
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ADC hard radiation
Abstract: 28/ADC hard radiation EEPROM 16MB SCS750 HSN-3000 79LV2040 29F0408 rad-pak 358 9240LP XP-40
Text: Microelectronics’ Product List Product Description Part Number Radiation Technology Package Screening Style Level FP DIP QFP Specification Status S or B Equivalent Data Sheet Active S, B, I, E S, B, I, E S, B, I, E S, B, I, E S, B, I, E Data Sheet Data Sheet
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MIL-PRF-38535
ISO9001
AS9100
ADC hard radiation
28/ADC hard radiation
EEPROM 16MB
SCS750
HSN-3000
79LV2040
29F0408
rad-pak 358
9240LP
XP-40
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