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    STE30NA50-DK

    Abstract: ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220
    Text: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 ISOWATT 220TM Fully isolated TO-220 MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000


    Original     		PDF OT-82 OT-223 O-220 220TM MAX220TM 218TM O-247 MAX247TM Max247 Max220 STE30NA50-DK ISOWATT-220 to220 ste38na50 transistors irf640 STE30NA50 STP5NA90FI STB30N10 STE30NA50-da ISOWATT220

    std2n52

    Abstract: stp3n60 STE38NA50 *D2N52 FTP5021-0 TO220 STP60NE06-16 STD2NB60 STP3N60FI STD12NE06 stp7nb20
    Text: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 TO-220 ISOWATT 220TM / TO-220FP Fully isolated MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS Sales Type STB80NE03L-06


    Original     		PDF OT-82 OT-223 O-220 220TM O-220FP MAX220TM 218TM O-247 MAX247TM STB80NE03L-06 std2n52 stp3n60 STE38NA50 *D2N52 FTP5021-0 TO220 STP60NE06-16 STD2NB60 STP3N60FI STD12NE06 stp7nb20

    ste30na50-DK

    Abstract: ste30na50 ste38na50 STP15N25 STE30NA50-DA STW26N25 STY16NA90 stp20n10l BUZ10 STW75N06
    Text: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 2 1 ISOWATT 220TM Fully isolated TO-220 MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS VDSS (V) Ron (max) (Ω) 1000 1000


    Original     		PDF OT-82 OT-223 220TM O-220 MAX220TM 218TM O-247 MAX247TM Max247 Max220 ste30na50-DK ste30na50 ste38na50 STP15N25 STE30NA50-DA STW26N25 STY16NA90 stp20n10l BUZ10 STW75N06

    STU6NA90

    Abstract: No abstract text available
    Text: STU6NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STU6NA90 900 V <2Ω 5.8 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE


    Original     		PDF STU6NA90 Max220 O-220, O-220 STU6NA90

    U8NA80

    Abstract: STU8NA80 8A320
    Text: STU8NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST U8NA80 • ■ ■ ■ ■ ■ V DSS R DS on ID 800 V < 1.0 Ω 8.3 A TYPICAL RDS(on) = 0.85 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		PDF STU8NA80 U8NA80 Max220TM Max220 O-220, U8NA80 STU8NA80 8A320

    U14NA50

    Abstract: STU14NA50
    Text: STU14NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE ST U14NA50 • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.36 Ω 14 A TYPICAL RDS(on) = 0.31 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		PDF STU14NA50 U14NA50 Max220TM Max220 U14NA50 STU14NA50

    STU9NA60

    Abstract: sd 50 diode
    Text: STU9NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STU9NA60 600 V < 0.8 Ω 9A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.68 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		PDF STU9NA60 Max220 O-220, O-220 STU9NA60 sd 50 diode

    DD 128 D transistor

    Abstract: STU8NA80 8a320
    Text: STU8NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STU8NA80 800 V < 1.0 Ω 8.3 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.85 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		PDF STU8NA80 Max220TM Max220 O-220, O-220 DD 128 D transistor STU8NA80 8a320

    Untitled

    Abstract: No abstract text available
    Text: STU6N60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6N60 • ■ ■ ■ ■ V DSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETETIVE AVALANCHE DATA AT 100 oC


    Original     		PDF STU6N60 Max220 O-220, Max220TM

    Untitled

    Abstract: No abstract text available
    Text: STU7NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU7NA60 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 600 V < 1Ω 7.6 A TYPICAL RDS(on) = 0.92 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED DATA


    Original     		PDF STU7NA60 STU7NA60 Max220TM Max220 O-220,

    Untitled

    Abstract: No abstract text available
    Text: STU10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU10NA50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.6 Ω 10.2 A TYPICAL RDS(on) = 0.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED


    Original     		PDF STU10NA50 STU10NA50 Max220 O-220,

    STU9NA60

    Abstract: No abstract text available
    Text: STU9NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU9NA60 • ■ ■ ■ ■ ■ V DSS R DS on ID 600 V < 0.8 Ω 9A TYPICAL RDS(on) = 0.68 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		PDF STU9NA60 Max220 O-220, STU9NA60

    STU7NA80

    Abstract: No abstract text available
    Text: STU7NA80 N - CHANNEL 800V - 1.3Ω - 6.5A - Max220 FAST POWER MOSFET PRELIMINARY DATA TYPE V DSS R DS on ID STU7NA80 800 V < 1.5 Ω 6.5 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED DATA


    Original     		PDF STU7NA80 Max220 Max220TM Max220 O-220, STU7NA80

    STU14NA50

    Abstract: No abstract text available
    Text: STU14NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU14NA50 • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.36 Ω 14 A TYPICAL RDS(on) = 0.31 Ω EFFICIENT AND RELAIBLE MOUNTING THROUGH CLIP ± 30V GATE TO SOURCE VOLTAGE RATING


    Original     		PDF STU14NA50 Max220TM Max220 O-220, STU14NA50

    d 78040

    Abstract: BS138 MAX03H 78105 2001 aavid 82940 78015 78015 to220 semiconductors cross index MAX01-H
    Text: Table of Contents How to Use this Catalog . 2 How to Order The Max Clip SystemTM . 3


    Original     		PDF

    STU10NA50

    Abstract: No abstract text available
    Text: STU10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU10NA50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.6 Ω 10.2 A TYPICAL RDS(on) = 0.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED


    Original     		PDF STU10NA50 Max220TM Max220 STU10NA50

    Untitled

    Abstract: No abstract text available
    Text: DIMENSIONS REF. Millimeters Min. Max. Min. Max. A 4.30 4.60 0.169 0.181 A1 2.20 2.40 0.087 0.094 A2 2.90 3.10 0.114 0.122 b 0.70 0.93 0.028 0.037 b1 1.25 1.55 0.049 0.061 b2 1.20 1.50 0.047 0.059 c 0.45 0.60 0.018 0.024 D 15.90 16.30 0.626 0.642 D1 9.00 9.35


    Original     		PDF MAX220TM 089776A

    STU10NA50

    Abstract: V8012
    Text: STU10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU10NA50 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 500 V < 0.6 Ω 10.2 A TYPICAL RDS(on) = 0.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED


    Original     		PDF STU10NA50 Max220TM Max220 O-220, O-22SGS-THOMSON STU10NA50 V8012

    Untitled

    Abstract: No abstract text available
    Text: STU6NA60 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6NA60 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 600 V < 1.2 Ω 6.8 A TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE


    Original     		PDF STU6NA60 STU6NA60 Max220 O-220,

    transistor K O220

    Abstract: STU6NA90 900V2
    Text: STU6NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STU6NA90 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V < 2Ω 5.8 A TYPICAL RDS(on) = 1.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING REPETITIVE AVALANCHE TESTED LOW INTRINSIC CAPACITANCE


    Original     		PDF STU6NA90 Max220TM Max220 O-220, transistor K O220 STU6NA90 900V2