Untitled
Abstract: No abstract text available
Text: for Power Supply PFC3520V Series RED BLUE WHITE BLACK Mechanical Dimension: Unit: mm 90.0 5.0 24.0 Max. 35.0 Max. 2 Min. Features 12.0Max. 55.5 Max. Harmonics current regulation Low leakage flux suitable for power supply 41.0 Max. 46.0 0.5 The PFC Power Factor Corrector chokes
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PFC3520V
60Hz/1V
PFC3520V01
PFC3520V02
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Untitled
Abstract: No abstract text available
Text: PFC Chokes for Power Supply PFC3520V Series RED BLUE WHITE BLACK Mechanical Dimension: Unit: mm 90.0 5.0 24.0 Max. 35.0 Max. 2 Min. Features 12.0Max. 55.5 Max. Harmonics current regulation Low leakage flux suitable for power supply 41.0 Max. 46.0 0.5 The PFC Power Factor Corrector chokes
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PFC3520V
60Hz/1V
PFC3520V01
PFC3520V02
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ee8 transformer
Abstract: EE8.3 ee8 power transformer
Text: DC/DC Converter Transformer Type Dimensions: UNIT : mm EPC6.2 8.0 Max. Recommand Pad 4.0 Max. 2.0 1.2 4 3 Specifications Max. Operation Freq. : 300KHz Max. Operation Power : 300mW @100KHz 900mW @300KHz 6.5 Max. 1 6 1.5 4.0 0.5x0.1 EE6.3 5.2 Max. 8.8 Max. 2.54
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300KHz
300mW
100KHz
900mW
ee8 transformer
EE8.3
ee8 power transformer
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PDF
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EE8.3
Abstract: ee8 power transformer ee8 transformer
Text: DC/DC Converter Transformer Type Dimensions: UNIT : mm EPC6.2 8.0 Max. Recommand Pad 4.0 Max. 2.0 1.2 4 3 Specifications Max. Operation Freq. : 300KHz Max. Operation Power : 300mW @100KHz 900mW @300KHz 6.5 Max. 1 6 1.5 4.0 0.5x0.1 EE6.3 5.2 Max. 8.8 Max. 2.54
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300KHz
300mW
100KHz
900mW
EE8.3
ee8 power transformer
ee8 transformer
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PDF
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Untitled
Abstract: No abstract text available
Text: High Power Limiters EL0050 1.5 GHz to 1.85GHz Power Input Specifications RF Frequency Peak Power Average Power Pulse Width Load VSWR 1.5GHz to 1.85GHz 90 Watts max 25 Watts (max) 24ms uSec ± 1.4:1 Microwave Specifications Insertion Loss Recovery Time Flat Leakage
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EL0050
85GHz
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AMF-3B
Abstract: AMF-2B-020060-70-30P
Text: MEDIUM POWER AMPLIFIERS MODEL MODEL NUMBER NUMBER OPERATING OPERATING FREQUENCY FREQUENCY GHz (GHz) GAIN GAIN (dB, (dB,Min.) Min.) GAIN GAIN FLATNESS FLATNESS (±dB, (±dB,Max.) Max) NOISE NOISE TEMP. FIGURE (dB, (dB,Max.) Max.) OUTPUT OUTPUT POWER POWER
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AMF-3F-177220-60-17P
AMF-4F-177220-50-17P
AMF-5F-177220-50-17P
AMF-6F-177220-50-17P
128-079084-33P
AMF-5B-097102-33P
AMF-9B-140145-37P-WG
AMF-7B-140160-30P
AMF-7B-180215-23P
AMF-3B
AMF-2B-020060-70-30P
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC3866 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800 V(BR)CBO (V)900 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC3866
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Untitled
Abstract: No abstract text available
Text: 2N1242A Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)90 I(C) Max. (A)100m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N1242A
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GH0781HA2C
Abstract: No abstract text available
Text: Laser Diodes GH0781HA2C GH0781HA2C High Power Laser Diode for MAX. ✕24 • ■ Speed CD-R Drive 784nm-110mW Outline Dimensions (Unit : mm) ❇2 1.0±0.15 ❇2 0.4±0.1 X 90 ±2 1 2 ❇1 Y ø2.0 Features (1) Maximum optical power output : 110mW (CW) (2) High power (pulse MAX. 160mW), MAX. ◊24 speed writing
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GH0781HA2C
784nm-110mW)
110mW
160mW)
784nm
GH0781HA2C
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PDF
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Untitled
Abstract: No abstract text available
Text: SML814 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)900 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)60 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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SML814
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Untitled
Abstract: No abstract text available
Text: PG1473 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)20
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PG1473
Freq40M
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PDF
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Untitled
Abstract: No abstract text available
Text: ST28142 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)90 I(C) Max. (A)10 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)175 I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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ST28142
Freq10M
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PDF
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Untitled
Abstract: No abstract text available
Text: SDT3921 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)90 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC) I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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SDT3921
Freq10M
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PDF
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Untitled
Abstract: No abstract text available
Text: SDT3922 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)90 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC) I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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SDT3922
Freq10M
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PDF
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Untitled
Abstract: No abstract text available
Text: ECG2427 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80ã V(BR)CBO (V)90 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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ECG2427
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Untitled
Abstract: No abstract text available
Text: PG2326 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)90 I(C) Max. (A)10 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)5.0
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PG2326
Freq60MÃ
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Untitled
Abstract: No abstract text available
Text: PT2909 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)150 I(C) Max. (A)30 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175 I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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PT2909
Freq40M
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PDF
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Untitled
Abstract: No abstract text available
Text: PG1481 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)90 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)0.7 @I(C) (A) (Test Condition)10
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PG1481
Freq40M
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PDF
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Untitled
Abstract: No abstract text available
Text: PT2519 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)90 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC) I(CBO) Max. (A)100m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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PT2519
Freq100M
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SD2202S Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)90 I(C) Max. (A)5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).4 @I(C) (A) (Test Condition)3
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2SD2202S
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Untitled
Abstract: No abstract text available
Text: SDT3923 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)140 I(C) Max. (A)90 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC) I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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SDT3923
Freq10M
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSEL MS6264 8K x 8 CMOS Static RAM FEATURES DESCRIPTION >Available in 70/100 ns Max. >Automatic power-down when chip disabled • Lower power consumption: MS6264 - 495mW (Max.) Operating - 82.5mW (Max.) Standby - 11 mW (Max.) Power Down MS6264L - 467.5mW (Max.) Operating
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MS6264
495mW
MS6264L
MS6264
S6264-70PC
P28-1
S6264-70FC
S28-2
S6264L-70PC
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PDF
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i2764
Abstract: a2764 8k eprom 2764 INTEL 2764
Text: LH5763/J FEATURES • 8,192 x 8 bit organization • Access times: LH5763J: 70/90 ns MAX. LH5763: 90 ns (MAX.) • Single +5 V power supply • Low power consumption: Operating: 315 mW (MAX.) Standby: 1.05 mW (MAX.) • • • CMOS 64K (8K x 8) OTPROM/EPROM
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OCR Scan
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LH5763/J
LH5763J:
LH5763:
28-pin,
600-mil
LH5763J
LH5764he
i2764
a2764
8k eprom 2764
INTEL 2764
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PDF
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Untitled
Abstract: No abstract text available
Text: CYPRESS Features • Advanced second-generation PAL architecture • Low power — 90 mA max. commercial 10,15, 25 ns — 115 mA max. commercial (7 ns) — 130 mA max. military/industrial (15, 25 ns) • Quarter power version — 55 mA max. commercial • CMOS Flash technology for electrical
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OCR Scan
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PALCE20V8
LCE20V
LCE20V8
20V8-2
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PDF
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