MASTER TRANSISTOR NPN CROSS REFERENCE GUIDE Search Results

MASTER TRANSISTOR NPN CROSS REFERENCE GUIDE Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

MASTER TRANSISTOR NPN CROSS REFERENCE GUIDE Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
power transistors cross reference Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE Text: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products	Original	PDF	MJW16212 225AA) MJE13003 BUH51 power transistors cross reference motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
d331 npn transistor Abstract: transistor D331 circuit diagram application E3X-DA51-N E3X-DA11-N D331 PNP E3X-DA14V E3X-DA44V omron k3nx E39-F1 D331 transistor Text: Digital Fiber Amplifier E3X-DA-N The Ultimate Fiber Amplifier for Maximum Ease of Use and High Performance Be sure to read Safety Precautions on page 23. UL991* * UL certification including UL 991 testing and evaluation • Applicable standards: UL 3121-1	Original	PDF	UL991* S2-0200S d331 npn transistor transistor D331 circuit diagram application E3X-DA51-N E3X-DA11-N D331 PNP E3X-DA14V E3X-DA44V omron k3nx E39-F1 D331 transistor
E3X-DA41AT-S Abstract: E3X-DA11-S E3X-DA11AN-S e3c-lda E3C-LDA41 d331 npn transistor E3X-DA11AT-S E3X-DA41SE-S E3X-DA11AT E3X-MDA41 Text: CSM_E3X-DA-S_MDA_DS_E_3_1 E3X-DA-S Digital Fiber Sensors Perfection Transcended! A Wealth of Advanced Functions for Easy and Reliable Application Evolution and Perfection The next-generation platform for a wide range of sensing The industry's first Power Tuning Function in a digital sensor.	Original	PDF
E3X-DAC21-S Abstract: E3X-DAC11-S E3X-DAC41-S E3X-DAC E3XDA E32-A09 short distance detection E3X-DAC51-S omron E3E2 TC200E Text: Color Sensing Digital Fiber Sensor E3X-DAC-S Easy and Reliable The Fiber Sensor That Sees in Color • High-power white LED and multi-RGB processing eliminate the need to select light source types. ■ One-touch teaching enables stable detection that resists	Original	PDF
E3XNA44V OMRON Abstract: d331 npn transistor E3X-NA11 transistor D331 circuit diagram application NA11 NPN transistor d331 TRANSISTOR equivalent E32-D11L EX3-NA21 E32-D15XR E32-D11R Text: Manual Fiber Amplifier E3X-NA Simple and Easy-to-Use Amplifiers with a Sensitivity Adjuster Provided as a Standard Feature • Intuitive LED bar display shows light levels at a glance. ■ Utilizes OMRON’s innovative wire-saving connector. ■ Reduced wiring and space requirements for power	Original	PDF	E3X-NA11 E3X-NA21 E3XNA44V OMRON d331 npn transistor E3X-NA11 transistor D331 circuit diagram application NA11 NPN transistor d331 TRANSISTOR equivalent E32-D11L EX3-NA21 E32-D15XR E32-D11R
ISO ultrasonic sensor standards symbols Abstract: automatic brake failure indicator and engine heating alarm ir remote control ROBOt project report omron plc CQM1H CPU 51 dip switch selection project report on pick and place robot simple pick and place robotic arm cylindrical robot arm omron hmi ccs c pt100 DRT2-MD32ML Text: Industrial Automation Products SB IAMSG-4 2005 OmronElectronics LLC Printed in the U.S.A. 1/05/30M, 10M Master Selection Guide PHOTOELECTRIC SENSORS AMPLIFIED PHOTOMICROSENSORS PROXIMITY SENSORS LIMIT SWITCHES OTHER SENSOR SOLUTIONS PUSHBUTTONS, SWITCHES AND PILOT	Original	PDF	iF-06 P7LF-06 P7LF-06 PFP-100N PFP-50N 1/05/30M, ISO ultrasonic sensor standards symbols automatic brake failure indicator and engine heating alarm ir remote control ROBOt project report omron plc CQM1H CPU 51 dip switch selection project report on pick and place robot simple pick and place robotic arm cylindrical robot arm omron hmi ccs c pt100 DRT2-MD32ML
nmos transistor 0.35 um Abstract: npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials Text: 0.6 µm BiCMOS Process Family XHB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular HV BCD Technology Description The XHB06 is X-FAB's 0.6 Micron High-Voltage Bipolar CMOS DMOS BCD Technology, optimized for applications requiring operating voltages of 5V to 30V. Main target applications are power	Original	PDF	XHB06 XHB06 nmos transistor 0.35 um npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials
power BJT DARLINGTON PAIR NPN Abstract: lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference Text: BAT54 SERIES SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES ISSUE 1 SEPTEMBER 1995 1 BAT54 SERIES ✪ 1 1 1 TYPICAL CHARACTERISTICS 1 10m 100m 3 1m 10m +125°C +85°C +25°C 1m +125°C 3 +85°C 100µ 10µ 100µ 10µ 0.15 0.3 0.45 0.6 Forward Voltage VF V	Original	PDF	BAT54 BAT54A BAT54S BAT54C 05-Oct-2010 1280x768px. power BJT DARLINGTON PAIR NPN lcd inverter n mosfet cross reference BAT54A RF NPN Power BJT 100v l43 transistor transistor L42 ZBAT54C ZBAT54A Digital Transistors Cross Reference transistors diodes ics cross reference
zener diode phc 24 Abstract: 350v ZENER DIODE -20/zener diode phc 24 Text: 1.0 µm BCD Process XDM10 MIXED-SIGNAL FOUNDRY EXPERTS Modular 1.0µm 350V Trench Insulated BCD Process Description Key Features XDM10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for	Original	PDF	XDM10 XDM10 zener diode phc 24 350v ZENER DIODE -20/zener diode phc 24
zener diode phc Abstract: zener phc 12 zener diode phc 10 zener PH-C zener diode phc 16 zener diode phc 24 zener PH-C 15 zener diode phc 12 nd25d zener diode phc 15 Text: 1.0 µm BCD Process XDM10 MIXED-SIGNAL FOUNDRY EXPERTS Modular 1.0µm 350V Trench Insulated BCD Process Description XDM10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for	Original	PDF	XDM10 XDM10 zener diode phc zener phc 12 zener diode phc 10 zener PH-C zener diode phc 16 zener diode phc 24 zener PH-C 15 zener diode phc 12 nd25d zener diode phc 15
"X-Fab" Core cell library Abstract: nd65d RM3 transistors XDH10 analog devices transistor tutorials pnp transistor 650v mos rm3 data 20 PHB zener MOS RM3 nd35b Text: 1.0 µm BCD Process XDH10 MIXED-SIGNAL FOUNDRY EXPERTS Modular 1.0µm 650V Trench Insulated BCD Process Description XDH10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for	Original	PDF	XDH10 XDH10 "X-Fab" Core cell library nd65d RM3 transistors analog devices transistor tutorials pnp transistor 650v mos rm3 data 20 PHB zener MOS RM3 nd35b
E3X-DA11-S Abstract: d331 npn transistor transistor D331 circuit diagram application D331 PNP E3X-MDA41 apc smart ups 1000 e3c-lda OMRON plc programming console manual E3X-DA11SE-S shock sensor amplifier Text: E3X-DA-S Digital Fiber Sensors Perfection Transcended! A Wealth of Advanced Functions for Easy and Reliable Application Evolution and Perfection The next-generation platform for a wide range of sensing The industry's first Power Tuning Function in a digital sensor.	Original	PDF
omron plc CPU 41 e rs232 pin configuration Abstract: transistor f422 PYC35 RGB 5050 IP65 Text: Panel Builder Guide 2014 Components for panels and cabinets industrial.omron.eu Welcome to our world Our best-in-class devices for your panels and cabinets Welcome to Omron’s world of advanced industrial automation. The PANEL BUILDER GUIDE is your essential tool to pre-select	Original	PDF	Y209-EN2-02A PanelBuilderGuide2014 omron plc CPU 41 e rs232 pin configuration transistor f422 PYC35 RGB 5050 IP65
MOS RM3 Abstract: No abstract text available Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing	Original	PDF	XO035 XO035 35-micron MOS RM3

BC548 TRANSISTOR REPLACEMENT Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction	Original	PDF	BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
MOS RM3 Abstract: mos rm3 data XO035 Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well" Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing	Original	PDF	XO035 XO035 35micron MOS RM3 mos rm3 data Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"
OMRON EE-sx 412 Abstract: transistor D526 equivalent OMRON ee-sx 416 CS1W-CN118 cable OMRON sysmac c20 programming manual RELAY RM2 TR1 NJ-30 R88D-KN user manual error codes Text: Solution Selection Guide 2014 Au t o m a t i o n S y s t e m s M o t i o n & D r i ve s Sensing Co n t ro l Co m p o n e n t s S w i t c h i n g Co m p o n e n t s S a fe t y Better machines OMRON Automation and Safety is a leading global supplier of automation systems serving industrial	Original	PDF	X302-E3-06 OMRON EE-sx 412 transistor D526 equivalent OMRON ee-sx 416 CS1W-CN118 cable OMRON sysmac c20 programming manual RELAY RM2 TR1 NJ-30 R88D-KN user manual error codes
e3x-drt21-s Abstract: E3X-CN21 Text: New Product Digital Fiber Sensors E3X-DA-S Tough Fiber Sensor with the World's Most Stable Detection • With four times the light intensity, the E3X-DA-S provides higher reliability in environments with dust and dirt. • Two times the sensing distance. The E3X-DA-S enables stable longdistance detection even with flexible or extremely thin fibers.	Original	PDF	847-843-7900/Fax: 6835-3011/Fax: 21-5037-2222/Fax: E396-E1-01 e3x-drt21-s E3X-CN21
CMOS Abstract: No abstract text available Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications	Original	PDF
DNDA Abstract: No abstract text available Text: 1.0 m Process Family: XDH10 Modular 1.0μm 650V Trench Insulated BCD Process DESCRIPTION XDH10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for	Original	PDF	XDH10 XDH10 DNDA
NMOS depletion pspice model Abstract: NMOS MODEL PARAMETERS SPICE "X-Fab" Core cell library PSPICE MODEL R2R bsim3 ADS bsim3 model SPECTRE MODEL QS 100 NPN Transistor RP20 analog devices transistor tutorials Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications	Original	PDF
panasonic inverter manual vf 200 Abstract: panasonic inverter manual vf 100 MBDHT2510 MANUAL npn transistor w26 CY-122A-P-Z Text: 02/04/2013 Overview Panasonic automation products Panasonic offers a broad spectrum of products for all automation tasks, sensors, PLCs, HMIs, Servo Drives and FA Components. Along with our service philosophy to advise and take care of our customers, products	Original	PDF	RM1205-9, panasonic inverter manual vf 200 panasonic inverter manual vf 100 MBDHT2510 MANUAL npn transistor w26 CY-122A-P-Z
CMOS Process Family Abstract: XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor XP018 process flow diagram "X-Fab" Core cell library Text: 0.18 µm CMOS Process Family XP018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron CMOS Power Management Process Technology Description The XP018 series is X-FAB’s 0.18 micron Modular Mixed Signal CMOS Power Management Technology. Based upon the industrial standard single	Original	PDF	XP018 XP018 18-micron CMOS Process Family XH018 bsim3 bsim3 0.18 micron parameters analog devices transistor tutorials TRANSISTORS BJT list IMD2 transistor process flow diagram "X-Fab" Core cell library
bsim3 0.18 micron parameters Abstract: bsim3 model for 0.18 micron technology for hspice 0.18 um CMOS parameters bsim3 model model values for 0.18 micron technology cmos XH018 CMOS Process Family model values for 0.25 micron technology cmos aadcc01_3v3 0.18-um CMOS technology length and width Text: 0.18 µm CMOS Process Family XH018 MIXED-SIGNAL FOUNDRY EXPERTS 0.18 Micron Modular Mixed Signal HV CMOS Technology Description The XH018 series is X-FAB’s 0.18 micron Modular Mixed Signal HV CMOS Technology. Based upon the industrial standard single poly with up to six	Original	PDF	XH018 XH018 18-micron bsim3 0.18 micron parameters bsim3 model for 0.18 micron technology for hspice 0.18 um CMOS parameters bsim3 model model values for 0.18 micron technology cmos CMOS Process Family model values for 0.25 micron technology cmos aadcc01_3v3 0.18-um CMOS technology length and width

MASTER TRANSISTOR NPN CROSS REFERENCE GUIDE Search Results

MASTER TRANSISTOR NPN CROSS REFERENCE GUIDE Result Highlights (5)

MASTER TRANSISTOR NPN CROSS REFERENCE GUIDE Datasheets Context Search

power transistors cross reference

d331 npn transistor

E3X-DA41AT-S

E3X-DAC21-S

E3XNA44V OMRON

ISO ultrasonic sensor standards symbols

nmos transistor 0.35 um

power BJT DARLINGTON PAIR NPN

zener diode phc 24

zener diode phc

"X-Fab" Core cell library

E3X-DA11-S

omron plc CPU 41 e rs232 pin configuration

MOS RM3

BC548 TRANSISTOR REPLACEMENT

MOS RM3

OMRON EE-sx 412

e3x-drt21-s

CMOS

DNDA

NMOS depletion pspice model

panasonic inverter manual vf 200

CMOS Process Family

bsim3 0.18 micron parameters