Untitled
Abstract: No abstract text available
Text: International !“R Rectifier 4Û5SM5S QQlSlflM 302 • INR PD’9835 IRFI9520G HEXFET Power MOSFET • • • • • • • INTERNATIONAL RECTIFIER bSE D Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm P-Channel
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IRFI9520G
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Untitled
Abstract: No abstract text available
Text: I . . I P D -5.039 International XQR Rectifier IGBT SIP MODULE Features • • • • C P V 363 M4 U preliminart UltraFast IGBT 1 I Fully isolated printed circuit board mount package Switching-loss rating includes all "tail" losses HEXFRED soft ultrafast diodes
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360Vdc,
MAS5M52
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IRF360LC
Abstract: No abstract text available
Text: International PD' 9-,23° lo g Rectifier_ IR FP 360LC HEXFET Power MOSFET • • • • • • • Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating Reduced Cjssi C qss>Crss Isolated Central Mounting Hole Dynamic dv/dt Rated
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360LC
IRF360LC
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Untitled
Abstract: No abstract text available
Text: International BgllRectifier P D - 9.1076 IRGPC30M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V ge = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to
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IRGPC30M
10kHz)
554S2
0G2011S
O-247AC
4flSS45E
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