C5V6 ph
Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Text: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER
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1N821
1N4733A
1N821A
1N4734A
1N823
1N4735A
1N823A
C5V6 ph
C18 ph
PH C5V1
philips diode PH 33D
C8V2 PH
C10 PH
c4v7 ph
c5v1ph
c3v9ph
C33PH
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marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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MARKING L31 SMD
Abstract: No abstract text available
Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE
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BAV23S
OT-23
BAV23S
C-120
MARKING L31 SMD
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philips bav23s
Abstract: MARKING L31 SMD BAV23S L31 l31 sot23 SMD L31 BAV23S Philips smd code marking sot23 marking L31 PHILIPS
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV23S General purpose double diode Product specification Supersedes data of 1999 May 05 2001 Oct 12 Philips Semiconductors Product specification General purpose double diode FEATURES BAV23S MARKING
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M3D088
BAV23S
SCA73
613514/05/pp8
philips bav23s
MARKING L31 SMD
BAV23S L31
l31 sot23
SMD L31
BAV23S
Philips smd code marking sot23
marking L31 PHILIPS
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SMD L31
Abstract: smd diode marking 9 ba MARKING- L31 BAV23S l31 BAV23S MARKING L31 SMD
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope
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ISO/TS16949
BAV23S
OT-23
BAV23S
C-120
SMD L31
smd diode marking 9 ba
MARKING- L31
BAV23S l31
MARKING L31 SMD
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SMD L31
Abstract: MARKING L31 SMD SOT-23 marking l31 BAV23S l31 BAV23S marking L31 SOT23
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope
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BAV23S
OT-23
BAV23S
C-120
SMD L31
MARKING L31 SMD
SOT-23 marking l31
BAV23S l31
marking L31 SOT23
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MARKING L31 SMD
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope
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BAV23S
OT-23
BAV23S
C-120
MARKING L31 SMD
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MARKING L31 SMD
Abstract: BAV23S l31
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE 3 MARKING:- L31 Pin Configuration 2 1 BAV23S SOT-23 1 = ANODE 2 = CATHODE 3 = ANODE/ CATHODE DESCRIPTION BAV23S Consists of Two Planar Epitaxial High-Speed Diodes in One Microminiature Plastic Envelope
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BAV23S
OT-23
BAV23S
C-120
MARKING L31 SMD
BAV23S l31
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marking W26 sot23
Abstract: SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89
Text: PACKAGE OUTLINES Linear ICs SURFACE MOUNT PACKAGES SOT23-3 SOT-23 0.7 1.0 3 e1 2.4 Marking e 0.95 e 0.95 e1 1.90 Recommended Mounting Pad + 0.1 0.4 0.95 2 1.6 0.1 1.1 0 - 0.1 1.4 max (0.3) 2.9 max. e 15 0.95 (0.4) 0.15 e + 0.1 1 C1 0.1 + 0.3 2.8 Dimensions are shown in millimeters
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OT23-3
OT-23)
OT23-5
OT-25)
TK73249M
OT23L-8
TK73250M
TK73255M
marking W26 sot23
SOT23-5 marking 016
sot23 w32
Marking c9 SOT23-5
W32 MARKING
SOT23-6 MARKING b4
sot89-5 PAD
Marking P35 sot89
SOT23-5 MARKING g5
Marking code 33 29 SOT89
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Untitled
Abstract: No abstract text available
Text: 2.5V & 3.3V LVDS Oscillator GXO-L31 Specifications Variant Parameters J ±100ppm ±50ppm ±25ppm <170MHz B A Operating temperature range: -10 to +70°C -40 to +85°C I Storage temperature range:
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GXO-L31
100ppm
50ppm
25ppm
170MHz)
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INTEGRATED CIRCUIT DATE code stmicroelectronics
Abstract: L3121B IEC1000-4-5 L3000N VDE0433 VDE0878 transformer 220v 2a
Text: L3121B Application Specific Discretes A.S.D.TM PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION FEATURES BIDIRECTIONAL FUNCTION WITH VOLTAGE PROGRAMMABILITY IN BOTH POSITIVE AND NEGATIVE POLARITIES. PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V.
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L3121B
INTEGRATED CIRCUIT DATE code stmicroelectronics
L3121B
IEC1000-4-5
L3000N
VDE0433
VDE0878
transformer 220v 2a
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2A 220v transformer
Abstract: L3000N L3121B
Text: L3121B Application Specific Discretes A.S.D. PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION FEATURES BIDIRECTIONAL FUNCTION WITH VOLTAGE PROGRAMMABILITY IN BOTH POSITIVE AND NEGATIVE POLARITIES. PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V.
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L3121B
2A 220v transformer
L3000N
L3121B
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Untitled
Abstract: No abstract text available
Text: L3121B PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR . . . FEATURES BIDIRECTIONAL FUNCTION WITH VOLTAGE PROGRAMMABILITY IN BOTH POSITIVE AND NEGATIVE POLARITIES. PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V. HOLDING CURRENT = 150 mA min. HIGH SURGE CURRENT CAPABILITY.
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L3121B
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l3100
Abstract: L3100B L3100B1
Text: L3100B L3100B1 Application Specific Discretes A.S.D. OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE FEATURES UNIDIRECTIONAL FUNCTION PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 265 V PROGRAMMABLE CURRENT LIMITATION FROM 50 mA TO 550 mA HIGH SURGE CURRENT CAPABILITY
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L3100B
L3100B1
l3100
L3100B
L3100B1
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L3100
Abstract: L3100B L3100B1 ptc resistor 300 to 500 e
Text: L3100B L3100B1 Application Specific Discretes A.S.D. OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE FEATURES UNIDIRECTIONAL FUNCTION PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 265 V PROGRAMMABLE CURRENT LIMITATION FROM 50 mA TO 550 mA HIGH SURGE CURRENT CAPABILITY
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L3100B
L3100B1
L3100
L3100B
L3100B1
ptc resistor 300 to 500 e
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PXTA14
Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.
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OT143,
OT323,
OD123
OD323
BZV49
BAW56W
BSR40
2PB709AR
BAW56
BSR41
PXTA14
mark a7 sot23
PMBZ52227B
marking CODE M10 SOT89
dc/SOT89 MARKING CODE 3D
2PB710AR
BST60
PMBTA14
PMBT4401
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Untitled
Abstract: No abstract text available
Text: 7 / SGS-TILIHOMSON Application Specific Discretes A.S.D. L3121B PROGRAM M ABLE TR AN SIEN T VOLTAGE SUPPRESSO R FOR SLIC PROTECTION FEATURES . BIDIRECTIONAL FUNCTION WITH VOLTAGE PROGRAMMABILITY IN BOTH POSITIVE AND NEGATIVE POLARITIES. • PROGRAMMABLE BREAKDOWN VOLTAGE
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON L3121B m Application Specific Discretes A.S.D. PRO G RAM M ABLE TRANSIENT VOLTAGE SUPPRESSO R FOR SLIC PROTECTION FEATURES • BIDIRECTIONAL FUNCTION WITH VOLTAGE PROGRAMMABILITY IN BOTH POSITIVE AND NEGATIVE POLARITIES. ■ PROGRAMMABLE BREAKDOWN VOLTAGE
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L3121B
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VB MARKING
Abstract: No abstract text available
Text: i C T S G S -T H O M S O N [M iSSi(greMO(êS L3121B PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FEATURES • BIDIRECTIONAL FUNCTION WITH VOLTAGE PROGRAMMABILITY IN BOTH POSITIVE AND NEGATIVE POLARITIES. ■ PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 100 V. . HOLDING CURRENT = 150m A m in.
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L3121B
VB MARKING
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BSR18R
Abstract: BSR18AR 1N916 BSR18 BSR18A BSP18
Text: “Ñ AMER PHILIPS/DISCRETE OhE D • bb53=l31 DDlSISt t BSR18 BSR18A T "- 3 7 - SILIC O N L O W -P O W E R S W IT C H IN G T R A N S IS T O R S * micromirli;l,llre ptasiic envelope, intended for sw itching and linear applfcations in thick and thin-film circuits.
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ttS3131
BSR18
BSR18A
31-tS
BSP18
7Z87144
BSR18R
BSR18AR
1N916
BSR18A
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oh140
Abstract: No abstract text available
Text: *T i L3100B L3100B1 SGS-THOMSON ;y Application Specific Discretes A.S.D. O VERVO LTAG E AND O VERCURRENT PROTECTION FOR TELECOM LINE FEATURES • UNIDIRECTIONAL FUNCTION ■ PROGRAMMABLE BREAKDOWN VOLTAGE UP TO 265 V ■ PROGRAMMABLE CURRENT LIMITATION
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L3100B
L3100B1
oh140
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