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    MARKING ZI SOT Search Results

    MARKING ZI SOT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING ZI SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking ZI

    Abstract: marking ZI SOT KTN2369S
    Text: SEMICONDUCTOR KTN2369S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking ZI No. 1 Item Marking Device Mark ZI KTN2369S hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


    Original     		PDF KTN2369S OT-23 marking ZI marking ZI SOT KTN2369S

    MARKING CODE Zi sot363

    Abstract: TMF3201J ZI Marking Code transistor MOSFET 9935
    Text: TMF3201J Semiconductor Dual Gate MOSFET □ Description The TMF3201J is an N-channel enhancement type, dual- SOT-363 insulated gate, field-effect transistor that utilizes MOS Unit in mm construction. It consists of two equal dual gate MOSFET amplifiers with shared source and gate2 leads. The source


    Original     		PDF TMF3201J TMF3201J OT-363 OT-363 KSD-A5S001-000 MARKING CODE Zi sot363 ZI Marking Code transistor MOSFET 9935

    marking ZI SOT

    Abstract: VEBO-15V 2SC4366 Low frequency amplifier
    Text: Transistors IC SMD Type Silicon NPN Epitaxial 2SC4366 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 Low Frequency amplifier. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


    Original     		PDF 2SC4366 OT-23 100mA 300mA marking ZI SOT VEBO-15V 2SC4366 Low frequency amplifier

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET RZ1214B35Y NPN microwave power transistor Product specification Supersedes data of June 1992 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B35Y FEATURES PINNING - SOT443A • Interdigitated structure provides high emitter efficiency


    Original     		PDF RZ1214B35Y OT443

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D034 RZ1214B65Y NPN microwave power transistor Product specification Supersedes data of 1997 Feb 18 1999 Dec 24 Philips Semiconductors Product specification NPN microwave power transistor RZ1214B65Y FEATURES PINNING - SOT443A


    Original     		PDF M3D034 RZ1214B65Y OT443

    marking zo sot -6

    Abstract: No abstract text available
    Text: FJX597J FJX597J Capacitor Microphone Applications • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic 2 1 SOT-323 1. Drain 2. Source 3. Gate Si N-channel Junction FET


    Original     		PDF FJX597J OT-323 marking zo sot -6

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor LTE21015R FEATURES PINNING - SOT44QA • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors provide excellent current sharing and withstanding a high VSWR


    OCR Scan     		PDF LTE21015R OT44QA MGL062

    MARKING FZ

    Abstract: BAS19W BAS20W BAS21W marking kt3
    Text: BAS19W-BAS21W VISHAY SURFACE MOUNT FAST SWITCHING DIODE Ì LITEM ZI POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-323


    OCR Scan     		PDF BAS19W-BAS21W OT-323, MIL-STD-202, BAS19W BAS20W BAS21W OT-323 100mA 200mA DS30118 MARKING FZ marking kt3

    142 transistor

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor LTE42012R FEATURES PINNING - SOT44QA • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR


    OCR Scan     		PDF LTE42012R OT44QA MGL013 142 transistor

    DS30002

    Abstract: MCL4448
    Text: MCL4448 VISHAY SURFACE MOUNT FAST SWITCHING DIODE y LITEM ZI POWER SEMICONDUCTOR Features • • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance Fits on SOD-323 / SOT-23 Footprint


    OCR Scan     		PDF MCL4448 OD-323 OT-23 MIL-STD-202, MCL4448 100mA DS30002

    MMBD7000

    Abstract: No abstract text available
    Text: MMBD7000 VISHAY DUAL SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWER SEMICONDUCTOR Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 -H ; h - A 7 B Mechanical Data


    OCR Scan     		PDF MMBD7000 OT-23, MIL-STD-202, OT-23 MMBD7000 DS12025

    KL31

    Abstract: 100S BAV23S marking kl31 sot23
    Text: BAV23S V IS H A Y SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 m 1


    OCR Scan     		PDF BAV23S OT-23, MIL-STD-202, OT-23 BAV23S 100mA 200mA DS30042 KL31 100S marking kl31 sot23

    100S

    Abstract: BAW56W
    Text: PRELIM INARY BAW56W VISHAY DUAL SURFACE MOUNT SWITCHING DIODE Ì LITEM ZI POW ER SEMICONDUCTOR Features Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance SOT-323 -H : h -A B C _±_ Mechanical Data_


    OCR Scan     		PDF BAW56W OT-323, MIL-STD-202, OT-323 BAW56W DS30064 100S

    MMBD914

    Abstract: JJ sot23 diode
    Text: MMBD914 VISHAY SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWERSEMICONDUCTOR Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 -H ; h - A t B Mechanical Data


    OCR Scan     		PDF MMBD914 OT-23, MIL-STD-202, OT-23 DS12020 MMBD914 JJ sot23 diode

    SOT-23 MARKING ka6

    Abstract: ba816 Vishay Diode BAS16 BAS16 marking KA6 DS12003
    Text: BAS 16 V IS H A Y SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 -H Ih-A


    OCR Scan     		PDF OT-23, MIL-STD-202, OT-23 DS12003 BAS16 BAS16 SOT-23 MARKING ka6 ba816 Vishay Diode BAS16 marking KA6

    BA831

    Abstract: DS1101 BAS31 sot-23 k21 marking K21
    Text: BAS31 V IS H A Y DUAL SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23


    OCR Scan     		PDF OT-23, MIL-STD-202, OT-23 DS11016 BAS31 BAS31 BA831 DS1101 sot-23 k21 marking K21

    100S

    Abstract: BAV70W
    Text: PRELIM INARY BAV70W VISHAY DUAL SURFACE MOUNT SWITCHING DIODE Ì LITEM ZI POW ER SEMICONDUCTOR Features Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance SOT-323 -H : h -A b \ k I Mechanical Data_


    OCR Scan     		PDF BAV70W OT-323, MIL-STD-202, OT-323 BAV70W DS30063 100S

    ka2 DIODE

    Abstract: MARKING KA2 SOT-23 MMBD4148 marking HA 7 sot23
    Text: MMBD4148 VISHAY SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWERSEMICONDUCTOR Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 -H ; h - A t B Mechanical Data


    OCR Scan     		PDF MMBD4148 OT-23, MIL-STD-202, OT-23 DS12010 MMBD4148 ka2 DIODE MARKING KA2 SOT-23 marking HA 7 sot23

    100S

    Abstract: BAS16W MMBD4148W
    Text: PRELIM INARY MMBD4148W / BAS16W VISHAY SURFACE MOUNT FAST SWITCHING DIODE Ì LITEM ZI POWER SEMICONDUCTOR Features Fast Switching Speed Ultra-Small Surface Mount Package For General Purpose Switching Applications High Conductance SOT-323 - H ;h-A I + Mechanical Data_


    OCR Scan     		PDF MMBD4148W BAS16W OT-323, MIL-STD-202, OT-323 DS30094 100S BAS16W

    BAV99W

    Abstract: BAV99W peak temperature
    Text: BAV99W VISHAY DUAL SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWER SEMICONDUCTOR Features Fast Switching Speed Ultra-small Surface Mount Package For General Purpose Switching Applications High Conductance SOT-323 -H : h -A 4 I Mechanical Data I I top j V ie w |


    OCR Scan     		PDF BAV99W OT-323, MIL-STD-202, OT-323 BAV99W DS30045 BAV99W peak temperature

    Diode SOT-23 marking JE

    Abstract: Diode bav99 kje KJE BAV99 kje vishay bav99 general bav99 vishay BAV99 application Diode bav99 BAV99 KJE SOT-23
    Text: BAV99 V IS H A Y DUAL SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWER SEMICONDUCTOR Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 I iI Mechanical Data


    OCR Scan     		PDF BAV99 OT-23, MIL-STD-202, OT-23 DS12007 BAV99 Diode SOT-23 marking JE Diode bav99 kje KJE BAV99 kje vishay bav99 general bav99 vishay BAV99 application Diode bav99 KJE SOT-23

    SOT-23 2D

    Abstract: Vishay MMBTA42 MMBTA42 MMBTA92
    Text: MMBTA92 v isH A Y PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary NPN Type Available M M BTA42 Ideal for Medium Power Amplification and Switching SOT-23 TOR VIEW


    OCR Scan     		PDF MMBTA92 MMBTA42) OT-23, MIL-STD-202, OT-23 -10mA, -30mA, -20mA, SOT-23 2D Vishay MMBTA42 MMBTA42 MMBTA92

    MMBT4124

    Abstract: MMBT4126 DS30105
    Text: MMBT4124 VISHAY NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Epitaxial Planar Die Construction Complementary PNP Type Available M M B T4126 Ideal for Medium Power Amplification and Switching SOT-23 - H ;h“ A T TOPÌ VIEW


    OCR Scan     		PDF MMBT4124 MMBT4126) OT-23, MIL-STD-202, OT-23 100MHz 100HA, 300ns, DS30105 MMBT4124 MMBT4126

    k72 transistor sot 23

    Abstract: transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23
    Text: 2N7002-01 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWER SEMICONDUCTOR Features Low On-Resistance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage SOT-23 ~ *\ : h - A TOP VIEW


    OCR Scan     		PDF 2N7002-01 OT-23, MIL-STD-202, OT-23 300ns, DS30026 2N7002-01 k72 transistor sot 23 transistor marking s72 k72 sot-23 transistor s72 k72 sot 23 k72 transistor S72 transistor S72 marking 702 TRANSISTOR sot-23 K72 SOT23