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    MARKING YF DIODE Search Results

    MARKING YF DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MARKING YF DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    diode marking code YF

    Abstract: diode marking YF diode 30 YF marking code YF diode marking YF marking code 024 sod Diode yf rectifying a sine wave marking bp 30 yf
    Text: SD0103WS SILICON SCHOTTKY BARRIER DIODE Features • Low forward voltage drop and suitable for high effifiency rectifying • Ultra small resin package is suitable for high density surface mounting and high speed assembly PINNING DESCRIPTION PIN 1 Cathode


    Original     		PDF SD0103WS OD-323 OD-323 diode marking code YF diode marking YF diode 30 YF marking code YF diode marking YF marking code 024 sod Diode yf rectifying a sine wave marking bp 30 yf

    diode marking code YF

    Abstract: diode 30 YF diode marking YF marking code YF diode marking YF diode marking code YF 30
    Text: SD0103WS SILICON SCHOTTKY BARRIER DIODE Features • Low forward voltage drop and suitable for high effifiency rectifying • Ultra small resin package is suitable for high density surface mounting and high speed assembly PINNING DESCRIPTION PIN 1 Cathode


    Original     		PDF SD0103WS OD-323 OD-323 diode marking code YF diode 30 YF diode marking YF marking code YF diode marking YF diode marking code YF 30

    yh 4100

    Abstract: diode marking YG MARKING ZX sot-23 YC sot 23 CZMK22V Zx SOT-23 yl 1060 CZMK13V MARKING YG SOT-23 MARKING YG SOT23
    Text: RECTRON CZMK Series SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 DUAL ZENER DIODE Common Cathode SOT- 23 Absolute Maximun Ratings (Ta=25oC) Symbol Value Unit Power Dissipation at Tamb = 25 °C P tot 300 mW Junction Temperature Storage Temperature Tj Ts Zener Current see Table ""Chara.""


    Original     		PDF OT-23 CZMK10V CZMK11V CZMK12V CZMK13V CZMK15V CZMK16V CZMK18V CZMK20V CZMK22V yh 4100 diode marking YG MARKING ZX sot-23 YC sot 23 CZMK22V Zx SOT-23 yl 1060 CZMK13V MARKING YG SOT-23 MARKING YG SOT23

    marking 4F

    Abstract: 4FV diode DIODE 3FV 60 3fv 60 9p marking
    Text: SEMICONDUCTOR KDZ2.0FV~36FV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK C D FEATURES ・Small Package : TFSC ・Sharp Breakdown Characteristic. B A E MAXIMUM RATING Ta=25℃


    Original     		PDF

    15W ZENER DIODES

    Abstract: XD 105 94V-0 colour code zener
    Text: 1.5W ZENER DIODES SMZJ SERIES • LOW ZENER IMPEDANCE AND LOW REGULATION FACTOR • UL 94V-0 PLASTIC PACKAGE ACCEPTS HIGH TEMP. SOLDERING: 250˚C FOR 10s AT TERMINALS SMZJ SERIES Max. ratings and characteristics @ 25˚C unless specified PM Av : 1.5W @ 75˚C


    Original     		PDF SMZJ3789B SMZJ3790B SMZJ3791B SMZJ3792B SMZJ3793B SMZJ3794B SMZJ3809B 178mm 330mm 15W ZENER DIODES XD 105 94V-0 colour code zener

    diode marking code YF

    Abstract: bzx84c MARKING CODE YA BZX84C56 diode marking sew diode marking YF marking code YF diode marking YF xf 375 marking code YK
    Text: BZX84C…SEW Series SILICON PLANAR ZENER DIODES 3 1 2 1. Anode 3. Cathode Absolute Maximum Ratings Ta = 25 C O Parameter Symbol Value Unit PD 200 mW Tj ,TS - 55 to + 150 Power Dissipation Operating Junction and Storage Temperature Range C O Electrical Characteristics ( Ta = 25 OC unless otherwise noted, VF < 0.9 V at IF = 10 mA)


    Original     		PDF BZX84C. BZX84C2V4SEW BZX84C2V7SEW BZX84C3V0SEW BZX84C47SEW BZX84C51SEW BZX84C56SEW BZX84C62SEW BZX84C68SEW BZX84C75SEW diode marking code YF bzx84c MARKING CODE YA BZX84C56 diode marking sew diode marking YF marking code YF diode marking YF xf 375 marking code YK

    4FV diode

    Abstract: 3fv 60 2FV 60 diode diode 3FV 60 mark 2fv diode kdz2.0fv KDZ9.1FV diode zener 3FV 36FV 4FV 60 on
    Text: SEMICONDUCTOR KDZ2.0FV~36FV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK FEATURES Small Package : TFSC C D Sharp Breakdown Characteristic. B DIM A B C D E F A


    Original     		PDF KDZ36FV KDZ33FV KDZ30FV KDZ18FV KDZ20FV KDZ22FV KDZ24FV KDZ27FV 4FV diode 3fv 60 2FV 60 diode diode 3FV 60 mark 2fv diode kdz2.0fv KDZ9.1FV diode zener 3FV 36FV 4FV 60 on

    smd code Yj 33

    Abstract: smd code marking yc 440 TZT3V6CW tzt9v1 TZT22CW TZT33AW zener smd marking d47 d82 smd smd marking YK smd marking YB
    Text: SMD Zener Diodes Three Terminals - 300mW 300mW Part No. TZT3V9AW TZT4V3AW TZT4V7AW TZT5V1AW TZT5V6AW TZT6V2AW TZT6V8AW TZT7V5AW TZT8V2AW TZT9V1AW TZT10AW TZT11AW TZT12AW TZT13AW TZT15AW TZT16AW TZT18AW TZT20AW TZT22AW TZT24AW TZT27AW TZT30AW TZT33AW TZT36AW


    Original     		PDF 300mW TZT10AW TZT11AW TZT12AW TZT13AW TZT15AW TZT16AW TZT18AW TZT20AW smd code Yj 33 smd code marking yc 440 TZT3V6CW tzt9v1 TZT22CW TZT33AW zener smd marking d47 d82 smd smd marking YK smd marking YB

    Untitled

    Abstract: No abstract text available
    Text: DF2S8.2CT ESD Protection Diodes Silicon Epitaxial Planar DF2S8.2CT 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.


    Original     		PDF IEC61000-4-2)

    marking YF diode

    Abstract: Toshiba 77 DIODE
    Text: DF2S8.2CT TOSHIBA Diodes for Protecting against ESD DF2S8.2CT Unit in mm Product for Use Only as Protection against Electrostatic Discharge ESD . CATHODE MARK *This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation,


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: DF2S8.2CT ESD Protection Diodes Silicon Epitaxial Planar DF2S8.2CT 1. Applications • ESD Protection Note: This product is designed for protection against electrostatic discharge ESD and is not intended for any other purpose, including, but not limited to, voltage regulation.


    Original     		PDF IEC61000-4-2)

    k3759

    Abstract: 2sk3759 K375 data sheet k3759
    Text: 2SK3759 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSⅥ 2SK3759 unit：ｍｍ Switching Regulator Applications Low drain-source ON resistance: R DS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (V DS = 500 V)


    Original     		PDF 2SK3759 k3759 2sk3759 K375 data sheet k3759

    2SK3762

    Abstract: K3762 MARKING toshiba 133
    Text: 2SK3762 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSⅣ 2SK3762 unit：ｍｍ Switching Regulator Applications 4.7max 4.7 max 10.5 10.5 max max 3.84±0.2 1.3 15.6 max 15.6 max. 1.5 max 1.5 max 3.93.9max max. 13.4 13.4 min min. Maximum Ratings (Ta = 25°C)


    Original     		PDF 2SK3762 2SK3762 K3762 MARKING toshiba 133

    SVC325

    Abstract: IT0251
    Text: Ordering number : ENN6649 SVC325 Diffused Junction Type Silicon Diode SVC325 Varactor Diode • • Package Dimensions Miniaturization and high-integration of tuner sets can be easily achieved due to the small package. High capacitance ratio and high quality factor.


    Original     		PDF ENN6649 SVC325 SVC325] SVC325 IT0251

    SVC325

    Abstract: No abstract text available
    Text: SVC325 Ordering number : EN6649A SVC325 Diffused Junction Type Silicon Diode Varactor Diode Features • • • Miniaturization and high-integration of tuner sets can be easily achieved due to the small package. High capacitance ratio and high quality factor.


    Original     		PDF SVC325 EN6649A SVC325

    K3761

    Abstract: 2SK3761 DS1015
    Text: 2SK3761 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSⅥ 2SK3761 unit：ｍｍ Switching Regulator Applications 4.7max 4.7 max 10.5 10.5 max max 3.84±0.2 1.3 15.6 max 15.6 max. 13.4 min 13.4 min. Maximum Ratings (Ta = 25°C) Characteristics


    Original     		PDF 2SK3761 K3761 2SK3761 DS1015

    K3763

    Abstract: 2SK3763 MARKING toshiba 133 2SK37
    Text: 2SK3763 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSIV 2SK3763 unit：ｍｍ Switching Regulator Applications 4.7max 4.7 max 10.5 10.5max max 3.84±0.2 1.3 3.84±0.2 Drain-source voltage 6.6 max. 15.6 max 15.6 max. Symbol Rating Unit


    Original     		PDF 2SK3763 K3763 2SK3763 MARKING toshiba 133 2SK37

    2SK3760

    Abstract: No abstract text available
    Text: 2SK3760 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOSⅥ 2SK3760 unit：ｍｍ Switching Regulator Applications 4.7max 4.7 max 10.5 10.5max max 3.84±0.2 1.3 3.84±0.2 6.6 max. 15.6 max 15.6 max. 1.5 1.5 max max 3.9 max. 13.4 13.4min min.


    Original     		PDF 2SK3760 2SK3760

    SVC347

    Abstract: Marking v1
    Text: SVC347 Ordering number : EN5816C SVC347 Hyper-Abrupt Junction Type Silicon Composite Varactor AM Low Voltage Electronic Tuning Applications Features • • • • • Twin type varactor diode for AM electronic tuning use. Miniaturization and high-integration of tuner sets can be easily achieved due to the small package.


    Original     		PDF SVC347 EN5816C SVC347 Marking v1

    Untitled

    Abstract: No abstract text available
    Text: SVC347 Ordering number : EN5816C SVC347 Hyper-Abrupt Junction Type Silicon Composite Varactor AM Low Voltage Electronic Tuning Applications Features • • • • • Twin type varactor diode for AM electronic tuning use. Miniaturization and high-integration of tuner sets can be easily achieved due to the small package.


    Original     		PDF EN5816C SVC347

    diode marking YG

    Abstract: 2SC3728 MITSUBISHI LOT NO transistor cr marking
    Text: MITSUBISHI SEMICONDUCTOR {SMALL-SIGNAL TRANSISTOR 2SC3728 FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC3728 Is a silicon N PN epitaxial type transistor.There is a built-in zener diode between collector to emitter.


    OCR Scan     		PDF 2SC3728 2SC3728 150to800 500mW 100mA -10mA diode marking YG MITSUBISHI LOT NO transistor cr marking

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAR 64-07 Silicon PIN Diode • • • • High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz Low resistance and short carrier lifetime For frequencies up to 3 GHz Type BAR64-07 Ordering Code tape and reel


    OCR Scan     		PDF BAR64-07 Q62702-A1044 OT-143 flE35bG5 Q120EEÃ 235bQ

    Untitled

    Abstract: No abstract text available
    Text: Super Fast Recovery Diode Single D iode OUTLINE Package : 1F m tm D1FL40 Unit-mm Weight 0.058g Typ i) 400V 0.8A / Ccilhode mark NÉ '4 h Feature • /J v P S M D • Small SMD • ß y - rx • Low Noise • trr=50ns • trr=50ns tt 5 k . ii Type No.


    OCR Scan     		PDF D1FL40 D1FL40

    smd marking YF

    Abstract: K711 diode marking code YF DIODE SMD CODE MARKING LG J532 smd code marking jr
    Text: Schottky Barrier Diode Single Diode m tm OUTLINE Package : G1F DG1S6 Unit-mm Weight 0.01 lg Typ 60 V 1A 3.5 Feature H • iiS'JvüJSM D • Ultra-small S M D • i2 j® s y = 0 .8 m m • Ultra-thin PKG=0.8m m • < S V f = 0 .5 8 V • Low V f=0.58V


    OCR Scan     		PDF T/-10 160mm2) 160mnf) i50Hz smd marking YF K711 diode marking code YF DIODE SMD CODE MARKING LG J532 smd code marking jr