marking YF
Abstract: YF 215 KRC826E
Text: SEMICONDUCTOR KRC826E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking YF 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark YF KRC826E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRC826E
marking YF
YF 215
KRC826E
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marking YF
Abstract: YF 215 KRC826U
Text: SEMICONDUCTOR KRC826U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking YF 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark YF KRC826U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRC826U
marking YF
YF 215
KRC826U
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B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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transistor marking 3em
Abstract: MMBTH10LT1 mmbth10 MMBTH10-4LT1
Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc
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MMBTH10LT1,
MMBTH10-4LT1
r14525
MMBTH10LT1/D
transistor marking 3em
MMBTH10LT1
mmbth10
MMBTH10-4LT1
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PDF
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Untitled
Abstract: No abstract text available
Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc
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MMBTH10LT1,
MMBTH10-4LT1
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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mps 1049
Abstract: JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23
Text: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS
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MMBTH10LT1,
MMBTH10-4LT1
mps 1049
JB marking transistor
Marking H11 sot
marking JB sot23
JB MARKING SOT-23
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transistor marking 3em
Abstract: MMBTH10 MMBTH10LT1G MMBTH10LT1 TRANSISTOR AH 2
Text: MMBTH10LT1, MMBTH10−4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS
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MMBTH10LT1,
MMBTH10-4LT1
MMBTH10LT1/D
transistor marking 3em
MMBTH10
MMBTH10LT1G
MMBTH10LT1
TRANSISTOR AH 2
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Untitled
Abstract: No abstract text available
Text: S JS 830320 REV WHITE MARKING 0 .0 4 0 " HIGH CHARACTER 0.102 ECN APP'D 6351 J T 0 9/1 1/09 6473 J T 2 /8 /1 0 6573 010/0.015 X 30 LEAD-II\ CHAMFER FOR INSERTION ONE SIDE ONLY 0 .7 5 0 >ANEL CUTOUT THICKNESS 0 .0 4 5 TO 0.070 LACK MARKING DATE CODE H T .0 6 5
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OCR Scan
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BACC63EFA-03PN
SJS830321
BACC63EFA-03PNH
SJS830320
BACC63EF
SJS830310
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PDF
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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OCR Scan
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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a03409
Abstract: A9 SOT-23 A03409L SOT-23 marking A9 A9 SOT23 marking a9 Alpha Semiconductor marking YF sot-23 MARKING CODE A9 Alpha Products
Text: Document No. yf ALPHA & OMEGA Version Title SEMICONDUCTOR, LTD. SOT-23 PACKAGE MARKING DESCRIPTION Green product NOTE: P - Package and product type N - Last digital of product number W - Week code A - Assembly location code L&T - Assembly lot code PART NO. DESCRIPTION CODE PN
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OCR Scan
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PD-00008
A03409
OT-23
A03409L
A9 SOT-23
SOT-23 marking A9
A9 SOT23
marking a9
Alpha Semiconductor
marking YF
sot-23 MARKING CODE A9
Alpha Products
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SUF620EF
Abstract: marking sot 5 pin
Text: SUF620EF Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • Low threshold voltage • Two STJ828 Chips in SOT-563F Package. Ordering Information Type NO. SUF620EF Marking
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SUF620EF
STJ828
OT-563F
OT-563F
KST-J016-000
-10mA
SUF620EF
marking sot 5 pin
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2SJ346
Abstract: 2SK1829
Text: 2SJ346 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ346 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5 to −1.5 V • High speed • Small package • Complementary to 2SK1829 Marking
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2SJ346
2SK1829
SC-70
2SJ346
2SK1829
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marking c08
Abstract: CMLDM8002A CMLDM8002AJ MARKING CODE 24 TRANSISTOR
Text: Central CMLDM8002A CMLDM8002AJ SURFACE MOUNT PICOminiTM DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-563 CASE MARKING CODE: CMLDM8002A: C08 CMLDM8002AJ: CJ8 TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8002A and CMLDM8002AJ are dual chip Enhancement-mode
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CMLDM8002A
CMLDM8002AJ
OT-563
CMLDM8002A:
CMLDM8002AJ:
CMLDM8002A
CMLDM8002AJ
CMLDM8002AJ,
500mA
marking c08
MARKING CODE 24 TRANSISTOR
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2SJ345
Abstract: 2SK1828
Text: 2SJ345 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ345 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5 to −1.5 V • High speed • Small package • Complementary to 2SK1828 Marking
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2SJ345
2SK1828
O-236MOD
SC-59
2SJ345
2SK1828
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Untitled
Abstract: No abstract text available
Text: 2SJ345 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ345 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5~−1.5 V • High speed • Small package • Complementary to 2SK1828 Marking Unit: mm
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2SJ345
2SK1828
SC-59
O-236MOD
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2SJ347
Abstract: 2SK1830 Toshiba 2SJ
Text: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5~−1.5 V • High speed • Small package • Complementary to 2SK1830 Marking Unit: mm
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2SJ347
2SK1830
2SJ347
2SK1830
Toshiba 2SJ
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Toshiba 2SJ
Abstract: No abstract text available
Text: 2SJ345 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ345 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5~−1.5 V • High speed • Small package • Complementary to 2SK1828 Marking Unit: mm
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2SJ345
2SK1828
O-236MOD
SC-59
Toshiba 2SJ
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2SJ347
Abstract: 2SK1830 Toshiba 2SJ
Text: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5~−1.5 V • High speed • Small package • Complementary to 2SK1830 Marking Unit: mm
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2SJ347
2SK1830
2SJ347
2SK1830
Toshiba 2SJ
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2SJ345
Abstract: 2SK1828 Toshiba 2SJ
Text: 2SJ345 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ345 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5~−1.5 V • High speed • Small package • Complementary to 2SK1828 Marking Unit: mm
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2SJ345
2SK1828
O-236MOD
SC-59
2SJ345
2SK1828
Toshiba 2SJ
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PDF
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Toshiba 2SJ
Abstract: No abstract text available
Text: 2SJ346 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ346 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5~−1.5 V • High speed • Small package • Complementary to 2SK1829 Marking Unit: mm
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2SJ346
2SK1829
SC-70
Toshiba 2SJ
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5~1.5 V • High speed • Enhancement-mode • Small package Marking
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2SK1830
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Untitled
Abstract: No abstract text available
Text: 2SK1827 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1827 High Speed Switching Applications Analog Switch Applications • 4 V gate drive • Low threshold voltage: Vth = 0.8~2.5 V • High speed • Enhancement-mode • Small package Marking
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2SK1827
SC-70
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SOT323-3
Abstract: MARKing SCC
Text: FJX597JC FJX597JC Capacitor Microphone Applications 3 • Especially Suited for use in Audio, Telephone Capacitor Microphones • Excellent Voltage Characteristic • Excellent Transient Characteristic 2 1 SOT-323 Marking: SCC 1. Drain 2. Source 3. Gate Si N-channel Junction FET
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FJX597JC
OT-323
FJX597JC
OT-323-3
FJX597JCTF
SOT323-3
MARKing SCC
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